专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20200270517A1 NANOCRYSTAL ASSEMBLIES AND USES THEREOF 审中-公开
公开(公告)号：US20200270517A1
公开(公告)日：2020-08-27
申请号：US16796847
申请日：2020-02-20
申请人： Satria Zulkarnaen Bisri , Thomas Kugler , Ian Johnson , Jeremy Burroughes , Yoshihiro Iwasa , Yasuhiro Ishida , Liming Liu
发明人： Satria Zulkarnaen Bisri , Thomas Kugler , Ian Johnson , Jeremy Burroughes , Yoshihiro Iwasa , Yasuhiro Ishida , Liming Liu
IPC分类号： C09K11/06 , C09K11/66 , H01L35/26 , H01L29/12
摘要： Provided herein are nanocrystal assemblies comprising quantum dots, a dopant (e.g., an organic compound dopant), and a ligand bridging the quantum dots. Also provided are methods of preparing the assemblies and devices comprising the assemblies (e.g., field effect transistors, thermoelectric generators).

2. 发明授权

US08476121B2 Organic thin film transistors and methods of making them 有权
标题翻译：有机薄膜晶体管及其制作方法
公开(公告)号：US08476121B2
公开(公告)日：2013-07-02
申请号：US13056906
申请日：2009-08-05
申请人： Jeremy Burroughes , Julian Carter , Euan Smith , Jonathan Halls , Thomas Kugler , Christopher Newsome
发明人： Jeremy Burroughes , Julian Carter , Euan Smith , Jonathan Halls , Thomas Kugler , Christopher Newsome
IPC分类号： H01L21/00
CPC分类号： H01L51/0022 , H01L51/0013 , H01L51/0036 , H01L51/0039 , H01L51/052 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ.
摘要翻译：本发明提供了一种制造有机薄膜晶体管（TFT）的方法，包括：提供衬底层; 提供栅电极层; 提供介电材料层; 提供有机半导体（OSC）材料层; 提供源极和漏极电极层; 并且其中使用激光诱导热成像（LITI）工艺沉积一层或多层。优选地，有机TFT是底栅器件，并且源极和漏极电极沉积在有机半导体层上，或者使用LITI沉积在电介质材料层上。进一步优选地，可以在OSC材料和源极和漏极电极层之间提供掺杂剂材料，其中掺杂剂材料也可以使用LITI沉积。还优选地，其中掺杂剂可以是电荷中性掺杂剂，例如取代的TCNQ或F4TCNQ。

3. 发明申请

US20110186829A1 Surface Treated Substrates for Top Gate Organic Thin Film Transistors 审中-公开
标题翻译：顶栅有机薄膜晶体管表面处理基板
公开(公告)号：US20110186829A1
公开(公告)日：2011-08-04
申请号：US13056332
申请日：2009-08-07
申请人： Jeremy Burroughes , Julian Carter , Jonathan Halls , Thomas Kugler , Christopher Newsome
发明人： Jeremy Burroughes , Julian Carter , Jonathan Halls , Thomas Kugler , Christopher Newsome
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/105 , H01L51/0094 , H01L51/0096 , H01L51/0541 , H01L51/0562 , Y02E10/549
摘要： A method of forming a top gate transistor comprising the steps of providing a substrate carrying source and drain electrodes defining a channel region therebetween; treating at least part of the surface of the channel region to reduce its polarity; and depositing a semiconductor layer in the channel.
摘要翻译：一种形成顶栅晶体管的方法，包括以下步骤：提供在其间限定沟道区的衬底承载源极和漏电极; 处理通道区域的至少一部分表面以降低其极性; 以及在沟道中沉积半导体层。

4. 发明申请

US20110186830A1 Method of Making Organic Thin Film Transistors Using a Laser Induced Thermal Transfer Printing Process 有权
标题翻译：使用激光诱导热转印技术制造有机薄膜晶体管的方法
公开(公告)号：US20110186830A1
公开(公告)日：2011-08-04
申请号：US13056906
申请日：2009-08-05
申请人： Jeremy Burroughes , Julian Carter , Euan Smith , Jonathan Halls , Thomas Kugler , Christopher Newsome
发明人： Jeremy Burroughes , Julian Carter , Euan Smith , Jonathan Halls , Thomas Kugler , Christopher Newsome
IPC分类号： H01L51/10 , H01L21/20 , H01L51/40 , H01L21/28
CPC分类号： H01L51/0022 , H01L51/0013 , H01L51/0036 , H01L51/0039 , H01L51/052 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ.
摘要翻译：本发明提供一种制造有机薄膜晶体管（TFT）的方法，包括：提供衬底层; 提供栅电极层; 提供介电材料层; 提供有机半导体（OSC）材料层; 提供源极和漏极电极层; 并且其中使用激光诱导热成像（LITI）工艺沉积一层或多层。优选地，有机TFT是底栅器件，并且源极和漏极电极沉积在有机半导体层上，或者使用LITI沉积在电介质材料层上。进一步优选地，可以在OSC材料和源极和漏极电极层之间提供掺杂剂材料，其中掺杂剂材料也可以使用LITI沉积。还优选地，其中掺杂剂可以是电荷中性掺杂剂，例如取代的TCNQ或F4TCNQ。

5. 发明申请

US20200270394A1 CHARGE TRANSFER SALT, ELECTRONIC DEVICE AND METHOD OF FORMING THE SAME 审中-公开
公开(公告)号：US20200270394A1
公开(公告)日：2020-08-27
申请号：US16063673
申请日：2016-12-16
申请人： Thomas Kugler
发明人： Thomas Kugler
IPC分类号： C08G61/02 , C07D235/18 , H01L51/00
摘要： A charge-transfer salt formed from a material comprising a repeat unit of formula (I) and an n-dopant: wherein BG is a backbone group of the repeat unit; R1 is a ionic substituent comprising at least one cationic or anionic group; n is at least 1; R2 is a non-ionic substituent; and m is 0 or a positive integer; the material further comprising a counterion balancing the charge of the cationic or anionic group.

6. 发明授权

US08946685B2 Method of making an organic thin film transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US08946685B2
公开(公告)日：2015-02-03
申请号：US13258671
申请日：2010-04-13
申请人： Thomas Kugler
发明人： Thomas Kugler
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L51/0012
摘要： A method of forming an organic thin film transistor the method comprising: seeding a surface outside a channel region with one or more crystallization sites prior to deposition of the organic semiconductor; depositing a solution of the organic semiconductor onto the seeded surface and over the channel region whereby the organic semiconductor begins forming a crystal domain at the or each of the crystallization sites, the or each crystal domain growing from its crystallization site across the channel region in a direction determined by an advancing surface evaporation front; and applying energy to control the direction and rate of movement of the surface evaporation front thereby controlling the direction and rate of growth of the or each crystal domain across the channel region from the one or more crystallization sites outside the channel region.
摘要翻译：一种形成有机薄膜晶体管的方法，所述方法包括：在沉积有机半导体之前，将具有一个或多个结晶部位的沟道区域外的表面接种; 将有机半导体的溶液沉积在接种的表面上和沟道区域上，由此有机半导体开始在该结晶部位或每个结晶部位形成晶体畴，该晶界或其每个晶畴从其结晶部位跨越通道区域生长方向由前进表面蒸发前沿确定; 并且施加能量以控制表面蒸发前沿的移动方向和方向，从而控制通道区域之外或每个晶体区域从通道区域外部的一个或多个结晶位点的生长方向和速率。

7. 发明授权

US08895354B2 Method of forming organic semiconductor device that includes forming electrode contact layer by treating electrode surfaces with substance containing substituted arene 有权
标题翻译：形成有机半导体器件的方法包括通过用含有取代的芳烃的物质处理电极表面形成电极接触层
公开(公告)号：US08895354B2
公开(公告)日：2014-11-25
申请号：US13807190
申请日：2011-06-30
申请人： Thomas Kugler , Christopher Newsome , Mohd K. Othman
发明人： Thomas Kugler , Christopher Newsome , Mohd K. Othman
IPC分类号： H01L51/40 , H01L51/05 , H01L51/10 , H01L51/00
CPC分类号： H01L51/0541 , H01L51/0026 , H01L51/0055 , H01L51/05 , H01L51/105
摘要： Method for producing a semiconductor device such as an organic thin film transistor, and a device produced by the method, the method including the steps of forming conducting electrodes over a substrate, treating a surface of the electrodes with an arene substituted with an electron-withdrawing group to form an electrode contact layer over the electrodes, and forming an organic semiconductor layer over the substrate and electrodes, in which the substrate and electrodes are baked before the organic semiconductor layer is formed so as to reduce contaminants on the electrode contact layer and thereby promote improved crystal nucleation on a surface of the electrode.
摘要翻译：用于制造半导体器件如有机薄膜晶体管的方法以及通过该方法制造的器件，该方法包括以下步骤：在衬底上形成导电电极，用用吸电子取代的芳烃处理电极的表面在电极上形成电极接触层，并且在形成有机半导体层之前在基板和电极上形成有机半导体层，其中基板和电极被烘烤，以便减少电极接触层上的污染物，从而促进电极表面上的改善的晶体成核。

8. 发明申请

US20120037915A1 Method of Making an Organic Thin Film Transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US20120037915A1
公开(公告)日：2012-02-16
申请号：US13258671
申请日：2010-04-13
申请人： Thomas Kugler
发明人： Thomas Kugler
IPC分类号： H01L29/786 , H01L21/20
CPC分类号： H01L51/0012
摘要： A method of forming an organic thin film transistor the method comprising: seeding a surface outside a channel region with one or more crystallization sites prior to deposition of the organic semiconductor; depositing a solution of the organic semiconductor onto the seeded surface and over the channel region whereby the organic semiconductor begins forming a crystal domain at the or each of the crystallization sites, the or each crystal domain growing from its crystallization site across the channel region in a direction determined by an advancing surface evaporation front; and applying energy to control the direction and rate of movement of the surface evaporation front thereby controlling the direction and rate of growth of the or each crystal domain across the channel region from the one or more crystallization sites outside the channel region.
摘要翻译：一种形成有机薄膜晶体管的方法，所述方法包括：在沉积有机半导体之前，将具有一个或多个结晶部位的沟道区域外的表面接种; 将有机半导体的溶液沉积在接种的表面上和沟道区域上，由此有机半导体开始在该结晶部位或每个结晶部位形成晶体畴，该晶界或其每个晶畴从其结晶部位跨越通道区域生长方向由前进表面蒸发前沿确定; 并且施加能量以控制表面蒸发前沿的移动方向和方向，从而控制通道区域之外或每个晶体区域从通道区域外部的一个或多个结晶位点的生长方向和速率。

9. 发明授权

US08022397B2 Transistor 有权
标题翻译：晶体管
公开(公告)号：US08022397B2
公开(公告)日：2011-09-20
申请号：US12155741
申请日：2008-06-09
申请人： Thomas Kugler
发明人： Thomas Kugler
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： G01N27/414 , H01L51/055
摘要： An electrolyte-gated field effect transistor is disclosed, the transistor comprising an electrolyte including a polymeric ionic liquid analogue. In a preferred embodiment, the transistor further comprises a source electrode, a drain electrode disposed so as to be separated from the source electrode, forming a gap between the source and drain electrodes, a semiconductor layer bridging the gap between the source and drain electrodes and thus forming a transistor channel, and a gate electrode positioned so as to be separated from the source electrode, the drain electrode and the semiconductor layer. In this embodiment, the electrolyte is disposed so as to contact at least a part of both the gate electrode and the semiconductor layer.
摘要翻译：公开了电解质门控场效应晶体管，该晶体管包括含有聚合离子液体类似物的电解质。在优选实施例中，晶体管还包括源电极，设置成与源电极分离的漏极，在源电极和漏电极之间形成间隙，桥接源电极和漏电极之间的间隙的半导体层和从而形成晶体管沟道，并且栅电极被定位成与源电极，漏电极和半导体层分离。在本实施例中，电解质被设置为与栅电极和半导体层的至少一部分接触。

10. 发明授权

US07736489B2 Process relating to polymers 有权
标题翻译：与聚合物有关的工艺
公开(公告)号：US07736489B2
公开(公告)日：2010-06-15
申请号：US10487575
申请日：2002-09-13
申请人： Lars-Olov Hennerdal , Tommi Remonen , Jessica Häll , Anna Malmström , Magnus Berggren , Thomas Kugler , Luc Leenders , Johan Lamotte
发明人： Lars-Olov Hennerdal , Tommi Remonen , Jessica Häll , Anna Malmström , Magnus Berggren , Thomas Kugler , Luc Leenders , Johan Lamotte
IPC分类号： H01B1/00
CPC分类号： H05K3/02 , H01B1/128 , H01B3/301 , H01L51/0021 , H01L51/0037 , Y10T428/24802 , Y10T428/265
摘要： A process for rendering an electrically conducting polymer essentially non-conducting is provided, in which the polymer is brought into direct electrical contact with an electrolyte. Furthermore, an electric voltage is applied to the polymer using at least two electrodes connected to a voltage supply, each electrode independently being in electrical contact with one of the polymer and the electrolyte. The electrically conducting polymer is rendered non-conducting through electrochemical reactions occurring in the interface between the polymer and the electrolyte in response to the electric voltage.
摘要翻译：提供了一种使导电聚合物基本上不导电的方法，其中聚合物与电解质直接电接触。此外，使用连接到电压源的至少两个电极向聚合物施加电压，每个电极独立地与聚合物和电解质之一电接触。响应于电压，导电聚合物通过在聚合物和电解质之间的界面中发生的电化学反应而变得不导电。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式