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    • 5. 发明申请
    • Pattern Inspection Method and Pattern Inspection System
    • 模式检验方法和模式检验系统
    • US20100310180A1
    • 2010-12-09
    • US12858209
    • 2010-08-17
    • Yasutaka TOYODAYasunari SoudaYuji TakagiKoji Arai
    • Yasutaka TOYODAYasunari SoudaYuji TakagiKoji Arai
    • G06K9/46
    • H01L22/12H01L2924/0002H01L2924/00
    • A pattern data examination method and system capable of accurately and speedily examining a circuit pattern without failing to extract pattern contour data are provided. While pattern comparison is ordinarily made by using a secondary electron image, a contour of a pattern element is extracted by using a backscattered electron image said to be suitable for observation and examination of a three dimensional configuration of a pattern element, and pattern inspection is executed by using the extracted contour of the pattern element. More specifically, pattern inspection is executed by comparing a contour of a pattern element with design data such as CAD data to measure a difference between the contour and the data, and by computing, for example, the size of the circuit pattern element from the contour of a pattern. From two or more backscattered electron images formed by detecting backscattered electrons at two or more different spatial positions, pattern contour data contained in the backscattered electron images may be obtained.
    • 提供了能够准确且快速地检查电路图案而不会提取图案轮廓数据的图形数据检查方法和系统。 虽然通常使用二次电子图像进行图案比较,但是通过使用所述适合于观察和检查图案元素的三维构造的背散射电子图像来提取图案元素的轮廓,并且执行图案检查 通过使用所提取的图案元素的轮廓。 更具体地,通过将​​图案元素的轮廓与诸如CAD数据的设计数据进行比较来测量轮廓和数据之间的差异,并且例如通过计算来自轮廓的电路图案元素的尺寸来执行图案检查 的模式。 通过在两个或更多个不同的空间位置检测反向散射电子形成的两个或更多个背散射电子图像,可以获得包含在背散射电子图像中的图案轮廓数据。
    • 7. 发明授权
    • Pattern inspection method and pattern inspection system
    • 图案检验方法和图案检验制度
    • US07786437B2
    • 2010-08-31
    • US12188096
    • 2008-08-07
    • Yasutaka ToyodaYasunari SoudaYuji TakagiKoji Arai
    • Yasutaka ToyodaYasunari SoudaYuji TakagiKoji Arai
    • G01N23/00G06K9/00
    • H01L22/12H01L2924/0002H01L2924/00
    • A pattern data examination method and system capable of accurately and speedily examining a circuit pattern without failing to extract pattern contour data are provided. While pattern comparison is ordinarily made by using a secondary electron image, a contour of a pattern element is extracted by using a backscattered electron image said to be suitable for observation and examination of a three dimensional configuration of a pattern element, and pattern inspection is executed by using the extracted contour of the pattern element. More specifically, pattern inspection is executed by comparing a contour of a pattern element with design data such as CAD data to measure a difference between the contour and the data, and by computing, for example, the size of the circuit pattern element from the contour of a pattern. From two or more backscattered electron images formed by detecting backscattered electrons at two or more different spatial positions, pattern contour data contained in the backscattered electron images may be obtained.
    • 提供了能够准确且快速地检查电路图案而不会提取图案轮廓数据的图形数据检查方法和系统。 虽然通常使用二次电子图像进行图案比较,但是通过使用所述适合于观察和检查图案元素的三维构造的背散射电子图像来提取图案元素的轮廓,并且执行图案检查 通过使用所提取的图案元素的轮廓。 更具体地,通过将​​图案元素的轮廓与诸如CAD数据的设计数据进行比较来测量轮廓和数据之间的差异,并且例如通过计算来自轮廓的电路图案元素的尺寸来执行图案检查 的模式。 通过在两个或更多个不同的空间位置检测反向散射电子形成的两个或更多个背散射电子图像,可以获得包含在背散射电子图像中的图案轮廓数据。