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1. 发明授权

US08343306B2 Plasma processing apparatus and method of plasma distribution correction 有权
标题翻译：等离子体处理装置及等离子体分布校正方法
公开(公告)号：US08343306B2
公开(公告)日：2013-01-01
申请号：US12046094
申请日：2008-03-11
申请人： Satoshi Tanaka , Chishio Koshimizu , Manabu Iwata , Naoki Matsumoto , Toru Ito
发明人： Satoshi Tanaka , Chishio Koshimizu , Manabu Iwata , Naoki Matsumoto , Toru Ito
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J37/32706 , H01J37/32091
摘要： A plasma processing apparatus can prevent a sheath from becoming distorted, simplify a configuration of the apparatus, and prevent particles from attaching to a substrate. The plasma processing apparatus performs plasma processing on the substrate. A housing chamber houses the substrate. A mounting stage is disposed within the housing chamber and mounted with the substrate. An annular member is disposed in the mounting stage. A power supply unit supplies high-frequency power to the mounting stage. An observation unit optically observes the distribution of the plasma. A voltage applying unit applies a DC voltage to the annular member. A control unit sets the value of the DC voltage to be applied based on the observed plasma distribution.
摘要翻译：等离子体处理装置可以防止护套变形，简化装置的构造，并防止颗粒附着于基板。等离子体处理装置对基板进行等离子体处理。容纳室容纳衬底。安装台设置在壳体室内并与基板一起安装。环形构件设置在安装台中。电源单元为安装级提供高频电源。观察单元光学地观察等离子体的分布。电压施加单元向环形构件施加DC电压。控制单元基于观察到的等离子体分布来设定要施加的DC电压的值。

2. 发明申请

US20090026170A1 PLASMA PROCESSING APPARATUS AND METHOD OF PLASMA DISTRIBUTION CORRECTION 有权
标题翻译：等离子体处理装置和等离子体分布校正方法
公开(公告)号：US20090026170A1
公开(公告)日：2009-01-29
申请号：US12046094
申请日：2008-03-11
申请人： Satoshi TANAKA , Chishio Koshimizu , Manabu Iwata , Naoki Matsumoto , Toru Ito
发明人： Satoshi TANAKA , Chishio Koshimizu , Manabu Iwata , Naoki Matsumoto , Toru Ito
IPC分类号： G01R31/00 , C23F1/08
CPC分类号： H01J37/32706 , H01J37/32091
摘要： A plasma processing apparatus can prevent a sheath from becoming distorted, simplify a configuration of the apparatus, and prevent particles from attaching to a substrate. The plasma processing apparatus performs plasma processing on the substrate. A housing chamber houses the substrate. A mounting stage is disposed within the housing chamber and mounted with the substrate. An annular member is disposed in the mounting stage. A power supply unit supplies high-frequency power to the mounting stage. An observation unit optically observes the distribution of the plasma. A voltage applying unit applies a DC voltage to the annular member. A control unit sets the value of the DC voltage to be applied based on the observed plasma distribution.
摘要翻译：等离子体处理装置可以防止护套变形，简化装置的构造，并防止颗粒附着于基板。等离子体处理装置对基板进行等离子体处理。容纳室容纳衬底。安装台设置在壳体室内并与基板一起安装。环形构件设置在安装台中。电源单元为安装级提供高频电源。观察单元光学地观察等离子体的分布。电压施加单元向环形构件施加直流电压。控制单元基于观察到的等离子体分布来设定要施加的DC电压的值。

3. 发明授权

US08513563B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08513563B2
公开(公告)日：2013-08-20
申请号：US13403588
申请日：2012-02-23
申请人： Naoki Matsumoto , Chishio Koshimizu , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Manabu Iwata , Satoshi Tanaka
发明人： Naoki Matsumoto , Chishio Koshimizu , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Manabu Iwata , Satoshi Tanaka
IPC分类号： B23K10/00
CPC分类号： H01J37/32165 , H01J37/32082
摘要： In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.
摘要翻译：在等离子体处理装置中，第一电极经由绝缘材料或空间连接到接地的可抽出处理室，并且在处理室中与与其间隔开的第一电极平行设置的第二电极，第二电极支撑目标衬底面对第一个电极。第一射频电源单元向第二电极施加第一频率的第一射频功率，第二射频电源单元将第二频率低于第一频率的第二射频功率施加到第二电极。此外，处理气体供给单元将处理气体供给到由第一和第二电极以及处理室的侧壁形成的处理空间。此外，电感器电连接在第一电极和地电位之间。

4. 发明授权

US07829463B2 Plasma processing method and plasma processing apparatus 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US07829463B2
公开(公告)日：2010-11-09
申请号：US11694126
申请日：2007-03-30
申请人： Naoki Matsumoto , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
发明人： Naoki Matsumoto , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
IPC分类号： H01L21/44
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32174 , H01J37/32623 , H01J37/32706 , H01J37/32935
摘要： A plasma processing method performs a desired plasma process on substrates by using a plasma generated in a processing space. A first and a second electrode are disposed in parallel in a processing vessel that is grounded, the substrate is supported on the second electrode to face the first electrode, the processing vessel is vacuum evacuated, a desired processing gas is supplied into the processing space formed between the first electrode, the second electrode and a sidewall of the processing vessel, and a first radio frequency power is supplied to the second electrode. The first electrode is connected to the processing vessel via an insulator or a space, and is electrically coupled to a ground potential via a capacitance varying unit whose electrostatic capacitance is varied based on a process condition of the plasma process performed on the substrate.
摘要翻译：等离子体处理方法通过使用在处理空间中产生的等离子体在衬底上进行所需的等离子体处理。第一电极和第二电极平行放置在接地的处理容器中，基板被支撑在第二电极上以面对第一电极，处理容器被真空抽真空，所需的处理气体被供应到形成的处理空间在第一电极，第二电极和处理容器的侧壁之间，并且向第二电极提供第一射频功率。第一电极经由绝缘体或空间连接到处理容器，并且经由静电电容根据在衬底上进行的等离子体处理的工艺条件而变化的电容变化单元电耦合到接地电位。

5. 发明申请

US20070227665A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20070227665A1
公开(公告)日：2007-10-04
申请号：US11694126
申请日：2007-03-30
申请人： Naoki Matsumoto , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
发明人： Naoki Matsumoto , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
IPC分类号： C23F1/00 , H01L21/465
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32174 , H01J37/32623 , H01J37/32706 , H01J37/32935
摘要： A plasma processing method performs a desired plasma process on substrates by using a plasma generated in a processing space. A first and a second electrode are disposed in parallel in a processing vessel that is grounded, the substrate is supported on the second electrode to face the first electrode, the processing vessel is vacuum evacuated, a desired processing gas is supplied into the processing space formed between the first electrode, the second electrode and a sidewall of the processing vessel, and a first radio frequency power is supplied to the second electrode. The first electrode is connected to the processing vessel via an insulator or a space, and is electrically coupled to a ground potential via a capacitance varying unit whose electrostatic capacitance is varied based on a process condition of the plasma process performed on the substrate.
摘要翻译：等离子体处理方法通过使用在处理空间中产生的等离子体在衬底上进行所需的等离子体处理。第一电极和第二电极平行放置在接地的处理容器中，基板被支撑在第二电极上以面对第一电极，处理容器被真空抽真空，所需的处理气体被供应到形成的处理空间在第一电极，第二电极和处理容器的侧壁之间，并且向第二电极提供第一射频功率。第一电极经由绝缘体或空间连接到处理容器，并且经由静电电容根据在衬底上进行的等离子体处理的工艺条件而变化的电容变化单元电耦合到接地电位。

6. 发明授权

US08034213B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08034213B2
公开(公告)日：2011-10-11
申请号：US11694083
申请日：2007-03-30
申请人： Naoki Matsumoto , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Noriaki Kodama , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
发明人： Naoki Matsumoto , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Noriaki Kodama , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J37/32174 , H01J37/32091
摘要： A plasma processing apparatus includes a processing vessel capable of being vacuum evacuated; a first electrode disposed in the processing vessel in a state electrically floating via an insulating member or a space; a second electrode, arranged in the processing vessel to face and be in parallel to the first electrode with a specific interval, supporting a substrate to be processed; a processing gas supply unit for supplying a desired processing gas into a processing space surrounded by the first electrode, the second electrode and a sidewall of the processing vessel; and a first radio frequency power supply unit for applying a first radio frequency power to the second electrode to generate a plasma of the processing gas in the processing space. An electrostatic capacitance between the first electrode and the processing vessel is set such that a desired plasma density distribution is obtained for the generated plasma.
摘要翻译：一种等离子体处理装置，其特征在于，包括：真空抽真空处理容器; 以处于通过绝缘构件或空间电浮动的状态设置在处理容器中的第一电极; 第二电极，布置在处理容器中以特定间隔面对并平行于第一电极，支撑待处理的基板; 处理气体供给单元，用于将期望的处理气体供给到被处理容器的第一电极，第二电极和侧壁包围的处理空间中; 以及第一射频电源单元，用于向所述第二电极施加第一射频功率以在所述处理空间中产生所述处理气体的等离子体。第一电极和处理容器之间的静电电容被设定为使得所产生的等离子体获得期望的等离子体密度分布。

7. 发明申请

US20070235426A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20070235426A1
公开(公告)日：2007-10-11
申请号：US11694153
申请日：2007-03-30
申请人： Naoki Matsumoto , Chishio Koshimizu , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Manabu Iwata , Satoshi Tanaka
发明人： Naoki Matsumoto , Chishio Koshimizu , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Manabu Iwata , Satoshi Tanaka
IPC分类号： B23K9/00
CPC分类号： H01J37/32165 , H01J37/32082
摘要： In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.
摘要翻译：在等离子体处理装置中，第一电极经由绝缘材料或空间连接到接地的可抽出处理室，并且在处理室中与与其间隔开的第一电极平行设置的第二电极，第二电极支撑目标衬底面对第一个电极。第一射频电源单元向第二电极施加第一频率的第一射频功率，第二射频电源单元将第二频率低于第一频率的第二射频功率施加到第二电极。此外，处理气体供给单元将处理气体供给到由第一和第二电极以及处理室的侧壁形成的处理空间。此外，电感器电连接在第一电极和地电位之间。

8. 发明申请

US20070227666A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20070227666A1
公开(公告)日：2007-10-04
申请号：US11694158
申请日：2007-03-30
申请人： Naoki Matsumoto , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Noriaki Kodama , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
发明人： Naoki Matsumoto , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Noriaki Kodama , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/31116 , C23C16/45565 , C23C16/5096 , C23C16/52 , H01J37/32091 , H01J37/32541
摘要： A plasma processing apparatus includes a processing vessel capable of being vacuum evacuated; a first electrode installed in the processing vessel to be in a state electrically floating via an insulating member or a space; a second electrode disposed in the processing vessel to be in parallel to the first electrode with a specific interval, for supporting a target substrate thereon to face the first electrode; a processing gas supply unit for supplying a processing gas into a processing space between the first electrode, the second electrode and a sidewall of the processing vessel; and a first radio frequency power supply unit for applying a first radio frequency power to the second electrode to generate a plasma of the processing gas in the processing space. A protrusion projected toward the second electrode is formed at a central portion of the first electrode.
摘要翻译：一种等离子体处理装置，其特征在于，包括：真空抽真空处理容器; 安装在处理容器中的第一电极处于通过绝缘构件或空间电浮动的状态; 设置在所述处理容器中的与所述第一电极平行的第二电极，所述第二电极具有特定的间隔，用于在其上支撑目标衬底以面对所述第一电极; 处理气体供给单元，用于将处理气体供给到处理容器的第一电极，第二电极和侧壁之间的处理空间; 以及第一射频电源单元，用于向所述第二电极施加第一射频功率以在所述处理空间中产生所述处理气体的等离子体。朝向第二电极突出的突起形成在第一电极的中心部分。

9. 发明申请

US20120145679A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20120145679A1
公开(公告)日：2012-06-14
申请号：US13403588
申请日：2012-02-23
申请人： Naoki Matsumoto , Chishio Koshimizu , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Manabu Iwata , Satoshi Tanaka
发明人： Naoki Matsumoto , Chishio Koshimizu , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Manabu Iwata , Satoshi Tanaka
IPC分类号： B23K9/00
CPC分类号： H01J37/32165 , H01J37/32082
摘要： In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.
摘要翻译：在等离子体处理装置中，第一电极经由绝缘材料或空间连接到接地的可抽出处理室，并且在处理室中与与其间隔开的第一电极平行设置的第二电极，第二电极支撑目标衬底面对第一个电极。第一射频电源单元向第二电极施加第一频率的第一射频功率，第二射频电源单元将第二频率低于第一频率的第二射频功率施加到第二电极。此外，处理气体供给单元将处理气体供给到由第一和第二电极以及处理室的侧壁形成的处理空间。此外，电感器电连接在第一电极和地电位之间。

10. 发明授权

US08138445B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08138445B2
公开(公告)日：2012-03-20
申请号：US11694153
申请日：2007-03-30
申请人： Naoki Matsumoto , Chishio Koshimizu , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Manabu Iwata , Satoshi Tanaka
发明人： Naoki Matsumoto , Chishio Koshimizu , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Manabu Iwata , Satoshi Tanaka
IPC分类号： B23K10/00
CPC分类号： H01J37/32165 , H01J37/32082
摘要： In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.
摘要翻译：在等离子体处理装置中，第一电极经由绝缘材料或空间连接到接地的可抽出处理室，并且在处理室中与与其间隔开的第一电极平行设置的第二电极，第二电极支撑目标衬底面对第一个电极。第一射频电源单元向第二电极施加第一频率的第一射频功率，第二射频电源单元将第二频率低于第一频率的第二射频功率施加到第二电极。此外，处理气体供给单元将处理气体供给到由第一和第二电极以及处理室的侧壁形成的处理空间。此外，电感器电连接在第一电极和地电位之间。

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