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1. 发明申请

US20070221269A1 Photovoltaic conversion cell, photovoltaic conversion module, photovoltaic conversion panel, and photovoltaic conversion system 审中-公开
标题翻译：光伏转换电池，光伏转换模块，光伏转换面板和光伏转换系统
公开(公告)号：US20070221269A1
公开(公告)日：2007-09-27
申请号：US11585073
申请日：2006-10-24
申请人： Satoshi Sakai , Yasuyuki Kobayashi , Saneyuki Goya , Youji Nakano
发明人： Satoshi Sakai , Yasuyuki Kobayashi , Saneyuki Goya , Youji Nakano
IPC分类号： H01L31/00
CPC分类号： H01L31/056 , H01L31/0236 , Y02E10/52
摘要： The efficiency of a thin film Si solar battery is improved. Between a back face electrode and a transparent conductive film provided on a front face side of the back face electrode, a refractive index adjustment layer is interposed made from a material that has a lower refractive index than that of the transparent conductive film. For example when the transparent conductive film is GZO, SiO2 is interposed between the transparent conductive film and the back face electrode made from Ag. As a result light that penetrates into and is absorbed at the back face electrode is reduced, and the reflectivity of light at the back face electrode is improved.
摘要翻译：提高薄膜Si太阳能电池的效率。在背面电极和设置在背面电极的正面侧的透明导电膜之间，由折射率低于透明导电膜折射率的材料构成折射率调节层。例如，当透明导电膜为GZO时，在透明导电膜和由Ag制成的背面电极之间插入SiO 2。结果，在背面电极中渗入并被吸收的光减少，并且提高了背面电极的光的反射率。

2. 发明申请

US20050205127A1 Photovoltaic device 审中-公开
标题翻译：光伏装置
公开(公告)号：US20050205127A1
公开(公告)日：2005-09-22
申请号：US11028312
申请日：2005-01-04
申请人： Toshiya Watanabe , Nobuki Yamashita , Youji Nakano , Saneyuki Goya , Satoshi Sakai , Yoshimichi Yonekura
发明人： Toshiya Watanabe , Nobuki Yamashita , Youji Nakano , Saneyuki Goya , Satoshi Sakai , Yoshimichi Yonekura
IPC分类号： H01L21/28 , H01L31/0224 , H01L31/04 , H01L31/075 , H01L31/076 , H01L31/00
CPC分类号： H01L31/1884 , H01L31/022483 , H01L31/075 , H01L31/076 , Y02E10/548
摘要： A photovoltaic device is formed by depositing at least a first transparent electrode, PIN-structured or NIP-structured microcrystalline silicon layers, a second transparent electrode, and a back electrode in sequence on an electrically insulating transparent substrate. The PIN-structured or NIP-structured microcrystalline silicon layers include a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer. At least one of the first transparent electrode and the second transparent electrode is a ZnO layer doped with Ga, and the Ga concentration is 15 atomic percent or less with respect to Zn.
摘要翻译：通过在电绝缘透明基板上依次沉积至少第一透明电极，PIN结构或NIP结构的微晶硅层，第二透明电极和背电极来形成光电器件。 PIN结构或NIP结构的微晶硅层包括p型硅层，i型硅层和n型硅层。第一透明电极和第二透明电极中的至少一个是掺杂有Ga的ZnO层，并且Ga相对于Zn为15原子％以下。

3. 发明申请

US20110205556A1 THIN-FILM INSPECTION APPARATUS AND METHOD THEREFOR 失效
标题翻译：薄膜检查装置及其方法
公开(公告)号：US20110205556A1
公开(公告)日：2011-08-25
申请号：US13120295
申请日：2009-07-02
申请人： Satoshi Sakai , Youji Nakano , Yasuyuki Kobayashi , Kengo Yamaguchi , Akemi Takano
发明人： Satoshi Sakai , Youji Nakano , Yasuyuki Kobayashi , Kengo Yamaguchi , Akemi Takano
IPC分类号： G01B11/06
CPC分类号： G01B11/0625
摘要： A thin-film inspection apparatus includes a storage section (14) that stores at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum that are affected by a variation in the film thickness of at least one of a first transparent thin film and a second transparent thin film are each associated with the film thickness of the first transparent thin film and the film thickness of the second transparent thin film; a light irradiation section (11) that irradiates an inspection-target substrate (S) with white light through a transparent glass substrate; a light receiving section (12) that receives reflected light reflected from the inspection-target substrate (S); and an arithmetic section (15) that obtains measurement values of the feature values stored in the storage section (14) from a spectral reflectance spectrum generated based on the received reflected light and that calculates the film thickness of each of the first transparent thin film and the second transparent thin film by using the obtained measurement values of the feature values and the feature-value characteristics stored in the storage section (14).
摘要翻译：薄膜检查装置包括存储部分（14），其存储至少两个特征值特性，其中从光谱反射光谱中的特征值中选择的至少两个特征值受到在第一透明薄膜和第二透明薄膜中的至少一个分别与第一透明薄膜的膜厚度和第二透明薄膜的膜厚相关联; 通过透明玻璃基板将白色光照射到检查对象基板（S）的光照射部（11）接收从所述检查对象基板（S）反射的反射光的受光部（12）。以及算术部（15），其从基于所接收的反射光生成的光谱反射光谱获得存储在所述存储部（14）中的特征量的测量值，并且计算所述第一透明薄膜和通过使用获得的存储在存储部分（14）中的特征值和特征值特性的测量值来确定第二透明薄膜。

4. 发明授权

US08482744B2 Thin-film inspection apparatus and method therefor 失效
标题翻译：薄膜检查装置及其方法
公开(公告)号：US08482744B2
公开(公告)日：2013-07-09
申请号：US13120295
申请日：2009-07-02
申请人： Satoshi Sakai , Youji Nakano , Yasuyuki Kobayashi , Kengo Yamaguchi , Akemi Takano
发明人： Satoshi Sakai , Youji Nakano , Yasuyuki Kobayashi , Kengo Yamaguchi , Akemi Takano
IPC分类号： G01B11/28
CPC分类号： G01B11/0625
摘要： A thin-film inspection apparatus calculates a film thickness of a first transparent thin film and a second transparent thin film of an inspection-target substrate including the first and second transparent thin films and a transparent conductive film on a transparent glass substrate. The apparatus has a storage section storing at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum; a light irradiation section irradiating the inspection-target substrate with white light through the transparent glass substrate; a light receiving section receiving light reflected from the inspection-target substrate; and an arithmetic section obtaining measurement values of the feature values stored in the storage section from the spectral reflectance spectrum based on the reflected light received by the light receiving section, and calculating the film thickness of each of the first transparent thin film and the second transparent thin film.
摘要翻译：薄膜检查装置在透明玻璃基板上计算包括第一透明薄膜和第二透明薄膜的透明导电薄膜的检查对象基板的第一透明薄膜和第二透明薄膜的膜厚。该装置具有存储至少两个特征值特性的存储部分，其中从光谱反射光谱中的特征值中选择的至少两个特征值; 光照射部，通过透明玻璃基板照射检查对象基板的白色光; 接收从检查对象基板反射的光的受光部; 以及算术部，基于由所述受光部所接收的反射光，从所述光谱反射率光谱求出存储在所述存储部中的特征量的测量值，并且计算所述第一透明薄膜和所述第二透明薄膜薄膜。

5. 发明授权

US08633378B2 Method of setting conditions for film deposition, photovoltaic device, and production process, production apparatus and test method for same 失效
标题翻译：薄膜沉积条件，光伏器件和生产工艺的制备方法，生产设备及其测试方法
公开(公告)号：US08633378B2
公开(公告)日：2014-01-21
申请号：US12308866
申请日：2007-08-30
申请人： Saneyuki Goya , Youji Nakano , Kouji Satake
发明人： Saneyuki Goya , Youji Nakano , Kouji Satake
IPC分类号： H01L31/18
CPC分类号： H01L31/1824 , C23C16/24 , C23C16/52 , Y02E10/545 , Y02P70/521
摘要： A photovoltaic device having a high conversion efficiency is produced in a stable manner. The conditions for film deposition of a microcrystalline silicon photovoltaic layer (4) in a photovoltaic device are set based on the Raman peak ratio within a Raman spectrum obtained at the substrate (1) side of the microcrystalline silicon layer (4), and the Raman peak ratio within a Raman spectrum obtained at the opposite side to the substrate (1).
摘要翻译：以稳定的方式制造具有高转换效率的光电器件。基于在微晶硅层（4）的基板（1）侧获得的拉曼光谱内的拉曼峰值比设定光电器件中的微晶硅光伏层（4）的成膜条件，拉曼在与基板（1）相反的一侧获得的拉曼光谱内的峰值比。

6. 发明申请

US20090183775A1 Method of Setting Conditions For Film Deposition, Photovoltaic Device, and Production Process, Production Apparatus and Test Method for Same 失效
标题翻译：设置膜沉积条件，光伏器件和生产工艺，生产设备及其测试方法的方法
公开(公告)号：US20090183775A1
公开(公告)日：2009-07-23
申请号：US12308866
申请日：2007-08-30
申请人： Saneyuki Goya , Youji Nakano , Kouji Satake
发明人： Saneyuki Goya , Youji Nakano , Kouji Satake
IPC分类号： H01L31/00 , H01L21/00 , B05C11/00
CPC分类号： H01L31/1824 , C23C16/24 , C23C16/52 , Y02E10/545 , Y02P70/521
摘要： A photovoltaic device having a high conversion efficiency is produced in a stable manner. The conditions for film deposition of a microcrystalline silicon photovoltaic layer (4) in a photovoltaic device are set based on the Raman peak ratio within a Raman spectrum obtained at the substrate (1) side of the microcrystalline silicon layer (4), and the Raman peak ratio within a Raman spectrum obtained at the opposite side to the substrate (1).
摘要翻译：以稳定的方式制造具有高转换效率的光电器件。基于在微晶硅层（4）的基板（1）侧获得的拉曼光谱内的拉曼峰值比设定光电器件中的微晶硅光伏层（4）的成膜条件，拉曼在与基板（1）相反的一侧获得的拉曼光谱内的峰值比。

7. 发明申请

US20100200052A1 PHOTOVOLTAIC DEVICE AND PROCESS FOR PRODUCING SAME 审中-公开
标题翻译：光伏器件及其制造方法
公开(公告)号：US20100200052A1
公开(公告)日：2010-08-12
申请号：US12671254
申请日：2007-09-18
申请人： Nobuki Yamashita , Toshiya Watanabe , Satoshi Sakai , Youji Nakano
发明人： Nobuki Yamashita , Toshiya Watanabe , Satoshi Sakai , Youji Nakano
IPC分类号： H01L31/00 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/1884 , C23C14/0036 , C23C14/086 , H01L31/022483 , H01L31/056 , H01L31/075 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： An object of the present invention is to provide a photovoltaic device and a process for producing such a photovoltaic device that enable a stable, high photovoltaic conversion efficiency to be achieved by using a transparent electrode having an optimal relationship between the resistivity and the transmittance. At least one transparent electrode (12, 16) is either a ZnO layer containing no Ga or a Ga-doped ZnO layer in which the quantity of added Ga is not more than 5 atomic % relative to the Zn within the ZnO layer, and the ZnO layer is formed by a sputtering method using a rare gas containing added oxygen as the sputtering gas, wherein the quantity of oxygen added to the sputtering gas is not less than 0.1% by volume and not more than 5% by volume relative to the combined volume of the oxygen and the rare gas.
摘要翻译：本发明的目的是提供一种光电器件及其制造方法，该光伏器件通过使用具有最佳电阻率和透射率之间的最佳关系的透明电极，能够实现稳定的高光电转换效率。至少一个透明电极（12,16）是不含Ga的ZnO层或Ga掺杂的ZnO层，其中所添加的Ga的量相对于ZnO层内的Zn不超过5原子％，并且通过使用含有添加的氧的稀有气体作为溅射气体的溅射法形成ZnO层，其中，相对于组合物，添加到溅射气体中的氧的量不小于0.1体积％且不大于5体积％体积的氧气和稀有气体。

8. 发明申请

US20070094653A1 Parameter storing method, parameter storage device, multi-body problem processing apparatus, and address generator circuit 失效
标题翻译：参数存储方法，参数存储装置，多体问题处理装置和地址发生器电路
公开(公告)号：US20070094653A1
公开(公告)日：2007-04-26
申请号：US11580896
申请日：2006-10-16
申请人： Youji Nakano
发明人： Youji Nakano
IPC分类号： G06F19/00
CPC分类号： G06F19/701
摘要： The object of the present invention is the reduction of memory capacity in a multi-body problem processing apparatus. In a parameter storing method in multi-body problem processing for performing a molecular dynamics calculation for a plurality of particles existing in a three-dimensional space, parameters required to calculate a nonassociative force acting between particles subjected to the calculation are stored in a storage device and correspond to a combination of the particles subjected to the calculation.
摘要翻译：本发明的目的是减少多体问题处理装置中的存储容量。在用于对存在于三维空间中的多个粒子进行分子动力学计算的多体问题处理中的参数存储方法中，计算在经过计算的粒子之间作用的非相关力所需的参数被存储在存储装置并且对应于经过计算的颗粒的组合。

9. 发明申请

US20060086386A1 Thin-film solar cell of tandem type 审中-公开
标题翻译：串联型薄膜太阳能电池
公开(公告)号：US20060086386A1
公开(公告)日：2006-04-27
申请号：US11252994
申请日：2005-10-19
申请人： Youji Nakano , Nobuki Yamashita
发明人： Youji Nakano , Nobuki Yamashita
IPC分类号： H01L31/00
CPC分类号： H01L31/077 , Y02E10/50
摘要： A thin-film solar cell of a tandem type includes a first conductive layer formed on a transparent substrate to which a sun light is input; a top solar cell layer formed on the first conductive layer; and a bottom solar cell layer laminated on the top solar cell layer to be connected with the top solar cell in series. A total generation electric current of the thin-film solar cell layer is determined based on a generation electric current of the bottom solar cell layer.
摘要翻译：串联型薄膜太阳能电池包括形成在输入太阳光的透明基板上的第一导电层; 形成在第一导电层上的顶部太阳能电池层; 以及层叠在与顶部太阳能电池串联连接的顶部太阳能电池层上的底部太阳能电池层。基于底部太阳能电池层的发电电流来确定薄膜太阳能电池层的总发电电流。

10. 发明申请

US20100116328A1 Process For Producing Photovoltaic Device And Photovoltaic Device 审中-公开
标题翻译：生产光伏器件和光伏器件的工艺
公开(公告)号：US20100116328A1
公开(公告)日：2010-05-13
申请号：US12452684
申请日：2008-12-19
申请人： Youji Nakano
发明人： Youji Nakano
IPC分类号： H01L31/00 , H01L31/0368
CPC分类号： H01L31/202 , H01L31/046 , H01L31/0463 , Y02E10/50 , Y02P70/521
摘要： A process for producing a photovoltaic device having a high conversion efficiency with improved productivity. The process for producing a photovoltaic device includes an n-layer formation step of depositing an n-layer composed of crystalline silicon on a substrate disposed inside a deposition chamber under reduced pressure conditions by heating the substrate with a heating device to convert the substrate to a heated state, supplying a raw material gas to the inside of the deposition chamber, and then supplying power to a discharge electrode positioned opposing the substrate, wherein the n-layer formation step comprises depositing the n-layer with the pressure inside the deposition chamber set to not less than 500 Pa and not more than 1,000 Pa, and the distance between the substrate and the discharge electrode set to not less than 6 mm and not more than 12 mm.
摘要翻译：一种生产率高的转换效率高的光伏器件的制造方法。制造光伏器件的方法包括：n层形成步骤，在减压条件下，在沉积室内设置的基板上沉积由结晶硅构成的n层，用加热装置加热衬底，将衬底转换成向沉积室内部供给原料气体，然后向与该基板相对配置的放电电极供电，其特征在于，所述n层形成工序包括：在所述沉积室组中沉积所述n层为500Pa以上1000Pa以下，基板与放电电极之间的距离为6mm以上且12mm以下。

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