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    • 2. 发明授权
    • Display device and electronic device having the display device, and method for manufacturing thereof
    • 具有显示装置的显示装置和电子装置及其制造方法
    • US08222640B2
    • 2012-07-17
    • US13215469
    • 2011-08-23
    • Satoshi KobayashiAtsushi MiyaguchiYoshitaka MoriyaYoshiyuki KurokawaDaisuke Kawae
    • Satoshi KobayashiAtsushi MiyaguchiYoshitaka MoriyaYoshiyuki KurokawaDaisuke Kawae
    • H01L29/04
    • H01L29/66765H01L29/04H01L29/41733H01L29/78696
    • To provide a display device including a thin film transistor in which high electric characteristics and reduction in off-current can be achieved. The display device having a thin film transistor includes a substrate, a gate electrode provided over the substrate, a gate insulating film provided over the gate electrode, a microcrystalline semiconductor film provided over the gate electrode with the gate insulating film interposed therebetween, a channel protection layer which is provided over and in contact with the microcrystalline semiconductor film, an amorphous semiconductor film provided over the gate insulating film and on a side surface of the microcrystalline semiconductor film and the channel protection layer, an impurity semiconductor layer provided over the amorphous semiconductor film, and a source electrode and a drain electrode provided over and in contact with the impurity semiconductor layer. The thickness of the amorphous semiconductor film is larger than that of the microcrystalline semiconductor film.
    • 提供一种显示装置,其具有可以实现高电特性和减少截止电流的薄膜晶体管。 具有薄膜晶体管的显示装置包括基板,设置在基板上的栅极电极,设置在栅电极上的栅极绝缘膜,设置在栅极上的微晶半导体膜,栅极绝缘膜插入其间,沟道保护 提供在微晶半导体膜上并与微晶半导体膜接触的层;非晶半导体膜,设置在栅极绝缘膜上方,并且在微晶半导体膜和沟道保护层的侧表面上,设置在非晶半导体膜上的杂质半导体层 以及设置在杂质半导体层上方并与其接触的源电极和漏电极。 非晶半导体膜的厚度大于微晶半导体膜的厚度。
    • 3. 发明授权
    • Display device and electronic device having the display device, and method for manufacturing thereof
    • 具有显示装置的显示装置和电子装置及其制造方法
    • US08013338B2
    • 2011-09-06
    • US12222259
    • 2008-08-06
    • Satoshi KobayashiAtsushi MiyaguchiYoshitaka MoriyaYoshiyuki KurokawaDaisuke Kawae
    • Satoshi KobayashiAtsushi MiyaguchiYoshitaka MoriyaYoshiyuki KurokawaDaisuke Kawae
    • H01L29/04
    • H01L29/66765H01L29/04H01L29/41733H01L29/78696
    • To provide a display device including a thin film transistor in which high electric characteristics and reduction in off-current can be achieved. The display device having a thin film transistor includes a substrate, a gate electrode provided over the substrate, a gate insulating film provided over the gate electrode, a microcrystalline semiconductor film provided over the gate electrode with the gate insulating film interposed therebetween, a channel protection layer which is provided over and in contact with the microcrystalline semiconductor film, an amorphous semiconductor film provided over the gate insulating film and on a side surface of the microcrystalline semiconductor film and the channel protection layer, an impurity semiconductor layer provided over the amorphous semiconductor film, and a source electrode and a drain electrode provided over and in contact with the impurity semiconductor layer. The thickness of the amorphous semiconductor film is larger than that of the microcrystalline semiconductor film.
    • 提供一种显示装置,其具有可以实现高电特性和减少截止电流的薄膜晶体管。 具有薄膜晶体管的显示装置包括基板,设置在基板上的栅极电极,设置在栅电极上的栅极绝缘膜,设置在栅极上的微晶半导体膜,栅极绝缘膜插入其间,沟道保护 提供在微晶半导体膜上并与微晶半导体膜接触的层;非晶半导体膜,设置在栅极绝缘膜上方,并且在微晶半导体膜和沟道保护层的侧表面上,设置在非晶半导体膜上的杂质半导体层 以及设置在杂质半导体层上方并与其接触的源电极和漏电极。 非晶半导体膜的厚度大于微晶半导体膜的厚度。