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1. 发明申请

US20090032510A1 Laser Processing Apparatus and Laser Processing Method 失效
标题翻译：激光加工设备和激光加工方法
公开(公告)号：US20090032510A1
公开(公告)日：2009-02-05
申请号：US11916047
申请日：2006-05-16
申请人： Satoshi Ando , Tomobumi Muraoka , Takashi Nire , Akira Matsuno , Tadashi Kurata
发明人： Satoshi Ando , Tomobumi Muraoka , Takashi Nire , Akira Matsuno , Tadashi Kurata
IPC分类号： B23K26/00 , B23K26/16
CPC分类号： B23K26/067 , B23K26/0676 , B23K26/073 , B23K26/08
摘要： A laser processing apparatus for processing a multitude of portions to be processed in an area to be processed in a subject W to be processed, including a laser device, a focusing or imaging means for laser beams provided by the laser device, and an arranging means for arranging the subject W to be processed, in which the subject W to be processed and the focusing or imaging means are fixed, and the subject to be processed is processed while relatively shifting the laser beams and the focusing or imaging means so that the focusing or imaging means is irradiated from different areas in the laser beam, inside and outside the area to be processed, and that cumulative laser beam irradiation time during the processing of each of the multitude of portions to be processed is equalized.
摘要翻译：一种激光处理装置，用于处理要处理的被摄体W中待处理区域中的多个部分的多个部分，包括激光装置，由激光装置提供的激光束的聚焦或成像装置，以及布置装置用于将要处理的被摄体W和聚焦或成像装置固定的待处理对象W进行布置，并且在相对移动激光束和聚焦或成像装置的同时处理待处理的被摄体，使得聚焦或成像装置从激光束的不同区域照射，待处理的区域内和外部，并且处理中的每个待处理的多个部分的累积激光束照射时间相等。

2. 发明授权

US08389894B2 Laser processing apparatus and laser processing method 失效
标题翻译：激光加工设备和激光加工方法
公开(公告)号：US08389894B2
公开(公告)日：2013-03-05
申请号：US11916047
申请日：2006-05-16
申请人： Satoshi Ando , Tomobumi Muraoka , Takashi Nire , Akira Matsuno , Tadashi Kurata
发明人： Satoshi Ando , Tomobumi Muraoka , Takashi Nire , Akira Matsuno , Tadashi Kurata
IPC分类号： B23K26/067
CPC分类号： B23K26/067 , B23K26/0676 , B23K26/073 , B23K26/08
摘要： A laser processing apparatus for processing a multitude of portions to be processed in an area to be processed in a subject W to be processed, including a laser device, a focusing or imaging device for laser beams provided by the laser device, and an arranging device for arranging the subject W to be processed, in which the subject W to be processed and the focusing or imaging device are fixed, and the subject to be processed is processed while relatively shifting the laser beams and the focusing or imaging device so that the focusing or imaging device is irradiated from different areas in the laser beam, inside and outside the area to be processed, and that cumulative laser beam irradiation time during the processing of each of the multitude of portions to be processed is equalized.
摘要翻译：一种激光处理装置，用于处理要处理的被摄体W中的待处理区域中的多个部分，包括激光装置，由激光装置提供的激光束的聚焦或成像装置，以及布置装置用于将要处理的被摄体W和聚焦或成像装置固定的要处理的被摄体W布置，并且在相对移动激光束和聚焦或成像装置的同时处理待处理的被摄体，使得聚焦或成像装置从激光束的不同区域照射，待处理区域的内部和外部，并且处理中的每个待处理的多个部分的累积激光束照射时间相等。

3. 发明授权

US07943534B2 Semiconductor device manufacturing method and semiconductor device manufacturing system 有权
标题翻译：半导体器件制造方法和半导体器件制造系统
公开(公告)号：US07943534B2
公开(公告)日：2011-05-17
申请号：US11988863
申请日：2006-07-24
申请人： Akira Matsuno , Takashi Nire
发明人： Akira Matsuno , Takashi Nire
IPC分类号： H01L21/00
CPC分类号： B23K26/0626 , B23K26/0613 , H01L21/02675 , H01L21/268 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device manufacturing method and a semiconductor device manufacturing system for irradiating a first laser light (50) and a second laser light (52) with a wavelength different from that of the first laser light to a substrate (46) to perform a thermal processing on the substrate are provided. In the step for performing the thermal processing, at least one of an irradiation intensity and an irradiation time of a first laser and a second laser is controlled to control a temperature distribution in the substrate or a film on the substrate in a depth direction.
摘要翻译：一种半导体器件制造方法和用于将具有与第一激光不同的波长的第一激光（50）和第二激光（52）照射到基板（46）的半导体器件制造系统，以进行热处理在基板上。在进行热处理的步骤中，控制第一激光器和第二激光器的照射强度和照射时间中的至少一个，以控制基板中的温度分布或深度方向上的基板上的膜。

4. 发明申请

US20090227121A1 Semiconductor device manufacturing method and semiconductor device manufacturing system 有权
标题翻译：半导体器件制造方法和半导体器件制造系统
公开(公告)号：US20090227121A1
公开(公告)日：2009-09-10
申请号：US11988863
申请日：2006-07-24
申请人： Akira Matsuno , Takashi Nire
发明人： Akira Matsuno , Takashi Nire
IPC分类号： H01L21/00 , G21K5/04
CPC分类号： B23K26/0626 , B23K26/0613 , H01L21/02675 , H01L21/268 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device manufacturing method and a semiconductor device manufacturing system for irradiating a first laser light (50) and a second laser light (52) with a wavelength different from that of the first laser light to a substrate (46) to perform a thermal processing on the substrate are provided. In the step for performing the thermal processing, at least one of an irradiation intensity and an irradiation time of a first laser and a second laser is controlled to control a temperature distribution in the substrate or a film on the substrate in a depth direction.
摘要翻译：一种半导体器件制造方法和用于将具有与第一激光不同的波长的第一激光（50）和第二激光（52）照射到基板（46）的半导体器件制造系统，以进行热处理在基板上。在进行热处理的步骤中，控制第一激光器和第二激光器的照射强度和照射时间中的至少一个，以控制基板中的温度分布或深度方向上的基板上的膜。

5. 发明授权

US5542979A Apparatus for producing thin film 失效
标题翻译：薄膜制造装置
公开(公告)号：US5542979A
公开(公告)日：1996-08-06
申请号：US437871
申请日：1995-05-09
申请人： Akira Matsuno , Takashi Nire
发明人： Akira Matsuno , Takashi Nire
IPC分类号： C23C14/00 , C23C14/06 , C23C14/22
CPC分类号： C23C14/0629 , C23C14/0021 , C23C14/22
摘要： A thin sulfide film can be formed by simultaneously generating under different conditions a plurality of deposition materials to be deposited on a substrate, using the fact that sulfur has a higher vapor pressure. Sulfur vapors can be generated in an external vessel (6) which is located outside the vacuum deposition vessel (1). The sulfur vapors can then be introduced into the vacuum deposition vessel (1) through a vapor inlet tube (7) to form a localized atmosphere of sulfur vapors within the vacuum deposition vessel (1) in the vicinity of the substrate which is positioned on a substrate holder (4). Chemical bonding, on the substrate, of the sulfur vapors and the vapors of other deposition materials generated from other deposition sources provided in the vacuum deposition vessel (1) form a thin film of high quality with good reproducibility. The vapor inlet tube (7) can project inwardly within the vacuum deposition vessel (1) with its outlet being positioned closely adjacent to the substrate so as to concentrate the sulfur vapors at the substrate. The vapor inlet tube (7) can be provided with a heater 11 to maintain the vapor state of the material passing therethrough.
摘要翻译：可以通过在不同条件下使用硫具有较高蒸气压的事实在多个沉积材料沉积在基板上同时产生薄硫化物膜。可以在位于真空沉积容器（1）外部的外部容器（6）中产生硫蒸汽。然后可以通过蒸汽入口管（7）将硫蒸汽引入真空沉积容器（1）中，以在位于基底上的基底附近的真空沉积容器（1）内形成硫蒸气的局部气氛衬底保持器（4）。在真空沉积容器（1）中提供的其他沉积源产生的硫蒸气和其它沉积材料的蒸气的基底上的化学键合形成高质量的薄膜，具有良好的再现性。蒸汽入口管（7）可以在真空沉积容器（1）内向内突出，其出口定位成紧密靠近基底，以将硫蒸汽浓缩在基底上。蒸汽入口管（7）可以设置有加热器11，以保持材料的蒸汽状态通过其中。

6. 发明授权

US5466494A Method for producing thin film 失效
标题翻译：薄膜制造方法
公开(公告)号：US5466494A
公开(公告)日：1995-11-14
申请号：US10765
申请日：1993-01-29
申请人： Akira Matsuno , Takashi Nire
发明人： Akira Matsuno , Takashi Nire
IPC分类号： C23C14/00 , C23C14/06 , C23C14/22 , C23C16/00
CPC分类号： C23C14/0629 , C23C14/0021 , C23C14/22
摘要： A thin sulfide film can be formed by simultaneously generating under different conditions a plurality of deposition materials to be deposited on a substrate, using the fact that sulfur has a higher vapor pressure. Sulfur vapors can be generated in an external vessel (6) which is located outside the vacuum deposition vessel (1). The sulfur vapors can then be introduced into the vacuum deposition vessel (1) through a vapor inlet tube (7) to form a localized atmosphere of sulfur vapors within the vacuum deposition vessel (1) in the vicinity of the substrate which is positioned on a substrate holder (4). Chemical bonding, on the substrate, of the sulfur vapors and the vapors of other deposition materials generated from other deposition sources provided in the vacuum deposition vessel (1) form a thin film of high quality with good reproducibility. The vapor inlet tube (7) can project inwardly within the vacuum deposition vessel (1) with its outlet being positioned closely adjacent to the substrate so as to concentrate the sulfur vapors at the substrate. The vapor inlet tube (7) can be provided with a heater 11 to maintain the vapor state of the material passing therethrough.
摘要翻译：可以通过在不同条件下使用硫具有较高蒸气压的事实在多个沉积材料沉积在基板上同时产生薄硫化物膜。可以在位于真空沉积容器（1）外部的外部容器（6）中产生硫蒸汽。然后可以通过蒸气入口管（7）将硫蒸汽引入真空沉积容器（1）中，以在位于基底上的基底附近的真空沉积容器（1）内形成硫蒸汽的局部气氛衬底保持器（4）。在真空沉积容器（1）中提供的其他沉积源产生的硫蒸气和其它沉积材料的蒸气的基底上的化学键合形成高质量的薄膜，具有良好的再现性。蒸汽入口管（7）可以在真空沉积容器（1）内向内突出，其出口定位成紧密靠近基底，以将硫蒸汽浓缩在基底上。蒸汽入口管（7）可以设置有加热器11，以保持材料的蒸汽状态通过其中。

7. 发明授权

US5641582A Thin-film EL element 失效
标题翻译：薄膜EL元件
公开(公告)号：US5641582A
公开(公告)日：1997-06-24
申请号：US325195
申请日：1994-10-28
申请人： Takashi Nire , Atsushi Miyakoshi
发明人： Takashi Nire , Atsushi Miyakoshi
IPC分类号： H05B33/10 , H05B33/12 , H05B33/14 , B32B9/00
CPC分类号： H05B33/145 , H05B33/10 , H05B33/12 , Y10S428/917
摘要： A thin-film EL element which does not permit the color of the emitted light to change irrespective of a change in the voltage, which remains chemically stable and which emits light of high brightness even on a low voltage. The element comprises two or more polycrystalline thin light emitting layers (4, 5, 6) and one or more thin insulating layers (3, 7). The interface between a thin film and a thin film constituting a light emitting layer is formed by epitaxial growth, and the electrical characteristics of the element are equivalent to those of a single circuit which includes two Zener diodes (12, 13) connected in series, a capacitor (14) connected in parallel with the serially connected Zener diodes, and a capacitor (15) connected to one end of the capacitor (14).
摘要翻译： PCT No.PCT / JP92 / 00958 Sec。 371日期：1994年10月28日 102（e）日期1994年10月28日PCT提交1992年7月29日PCT公布。出版物WO93 / 21744 日期：1993年10月28日一种不会使发射光的颜色发生变化的薄膜EL元件，不管电压的变化如何，即使在低电压下也能保持化学稳定并发出高亮度的光。元件包括两个或更多个多晶薄发光层（4,5,6）和一个或多个薄绝缘层（3,7）。构成发光层的薄膜和薄膜之间的界面是通过外延生长形成的，并且该元件的电特性与包括串联连接的两个齐纳二极管（12,13）的单个电路相同，与所述串联连接的齐纳二极管并联连接的电容器（14），以及与所述电容器（14）的一端连接的电容器（15）。

8. 发明授权

US5311035A Thin film electroluminescence element 失效
标题翻译：薄膜电致发光元件
公开(公告)号：US5311035A
公开(公告)日：1994-05-10
申请号：US836328
申请日：1992-03-02
申请人： Takashi Nire
发明人： Takashi Nire
IPC分类号： C09K11/77 , H01L33/06 , H05B33/14 , H01L33/00 , H01J1/62 , H01J63/04
CPC分类号： H01L33/06 , B82Y20/00 , C09K11/7745 , H05B33/14
摘要： A thin film EL element capable of emitting light of different colors desired even at a low applied voltage owing to its high luminescent efficiency and freedom from crystal defects. The thin film EL element is of the dual dielectric structure having a transparent substrate (1), and a transparent conducting film (2), a first dielectric layer (3), a luminescent layer (4), and a second dielectric layer (5), which are formed on top of the other on the substrate, the transparent conducting film and the second dielectric layer being provided with respective electrodes (6a, 6b). It is characterized in that the luminescent layer has a superlattice structure represented by (luminscent host material)/(luminescent host material):(luminescent center impurity). The luminescent layer permits the doping of various luminscent center impurities while keeping its electrical neutrality without a need for the addition of charge compensating elements.
摘要翻译： PCT No.PCT / JP89 / 00909 Sec。 371日期：1992年3月2日 102（e）1992年3月2日PCT PCT 1989年9月4日PCT公布。出版物WO91 / 03918 日期1991年3月21日。即使在低施加电压下也能够发出不同颜色的光的薄膜EL元件，由于其高的发光效率和无晶体缺陷。薄膜EL元件是具有透明基板（1）和透明导电膜（2），第一介电层（3），发光层（4）和第二介电层（5）的双电介质结构），所述透明导电膜和所述第二介电层设置有各自的电极（6a，6b）。其特征在于，发光层具有由（发光主体材料）/（发光主体材料）:(发光中心杂质）表示的超晶格结构。发光层允许掺杂各种发光中心杂质，同时保持其电中性，而不需要添加电荷补偿元件。

9. 发明授权

US5670207A Forming a thin-film EL element 失效
标题翻译：形成薄膜EL元件
公开(公告)号：US5670207A
公开(公告)日：1997-09-23
申请号：US594262
申请日：1996-01-30
申请人： Takashi Nire , Atsushi Miyakoshi
发明人： Takashi Nire , Atsushi Miyakoshi
IPC分类号： H05B33/10 , H05B33/12 , H05B33/14 , B05D5/12
CPC分类号： H05B33/145 , H05B33/10 , H05B33/12 , Y10S428/917
摘要： A thin-film EL element which does not permit the color of the emitted light to change irrespective of a change in the voltage, which remains chemically stable and which emits light of high brightness even on a low voltage. The element comprises two or more polycrystalline thin light emitting layers (4, 5, 6) and one or more thin insulating layers (3, 7). The interface between a thin film and a thin film constituting a light emitting layer is formed by epitaxial growth, and the electrical characteristics of the element are equivalent to those of a single circuit which includes two Zener diodes (12, 13) connected in series, a capacitor (14) connected in parallel with the serially connected Zener diodes, and a capacitor (15) connected to one end of the capacitor (14).
摘要翻译：不管发射光的颜色如何变化，薄膜EL元件不管电压的变化如何变化，即使在低电压下也能保持化学稳定并发出高亮度的光。元件包括两个或更多个多晶薄发光层（4,5,6）和一个或多个薄绝缘层（3,7）。构成发光层的薄膜和薄膜之间的界面是通过外延生长形成的，并且该元件的电特性与包括串联连接的两个齐纳二极管（12,13）的单个电路相同，与所述串联连接的齐纳二极管并联连接的电容器（14），以及与所述电容器（14）的一端连接的电容器（15）。

10. 发明授权

US5072263A Thin film EL device with protective film 失效
标题翻译：具有保护膜的薄膜EL器件
公开(公告)号：US5072263A
公开(公告)日：1991-12-10
申请号：US700947
申请日：1991-05-14
申请人： Takehito Watanabe , Satoshi Tanda , Takashi Nire
发明人： Takehito Watanabe , Satoshi Tanda , Takashi Nire
IPC分类号： H05B33/04 , H05B33/22
CPC分类号： H05B33/22 , H05B33/04
摘要： A thin-film EL device of which the surface is coated with a protective film of a two-layer structure consisting of an insulating film (10) and a metallic film (20) in order to obtain good air-tightness and high reliability. The insulating film (10) consists of any one of a silicon oxide film, a silicon nitride film, an aluminum oxide film or a tantalum oxide film, and the metallic film consists of a thin film of either aluminum or tantalum.

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