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    • 1. 发明申请
    • Organic Electroluminescence Display Device and Manufacturing Method Thereof
    • 有机电致发光显示装置及其制造方法
    • US20090115325A1
    • 2009-05-07
    • US12264942
    • 2008-11-05
    • Eiji MatsuzakiYoshinori IshiiSatoru Kase
    • Eiji MatsuzakiYoshinori IshiiSatoru Kase
    • H01J1/62H01J9/22
    • H01L51/5256H01L51/524H01L2251/5315
    • An organic EL element section (1000) is formed on a circuit formation section (102) formed on a circuit board (101). The organic EL element section (1000) is covered with a protective layer (113) including an SiNxOy film. The SiNxOy film has infrared absorption characteristics including: an Si—O—Si stretching vibration absorption peak appearing at energy lower than 1,000 cm−1; an absorption intensity of an Si—N stretching vibration absorption peak appearing in the vicinity of around 870 cm−1 which is 0.75 or more times an absorption intensity of the Si—O—Si stretching vibration absorption peak; and an absorption peak intensity in a range of 2,000 to 4,000 cm−1, which is 5% or less of the absorption intensity of the Si—N stretching vibration absorption peak. Thus, the protective film having an excellent moisture-blocking property may be obtained, and life property of an organic EL display device may be improved.
    • 有机EL元件部(1000)形成在电路基板(101)上形成的电路形成部(102)上。 有机EL元件部分(1000)被包括SiN x O y膜的保护层(113)覆盖。 SiN x O y膜具有红外吸收特性,包括:以低于1000cm -1的能量出现的Si-O-Si伸缩振动吸收峰; 在约870cm -1附近出现的Si-N伸缩振动吸收峰的吸收强度是Si-O-Si伸缩振动吸收峰的吸收强度的0.75倍以上; 以及在2,000〜4000cm -1的范围内的吸收峰强度,其为Si-N伸缩振动吸收峰的吸收强度的5%以下。 因此,可以获得具有优异的防湿性的保护膜,并且可以提高有机EL显示装置的寿命。
    • 8. 发明授权
    • Organic electroluminescence device
    • 有机电致发光器件
    • US08097886B2
    • 2012-01-17
    • US12604528
    • 2009-10-23
    • Satoru KaseYoshinori IshiiEiji Matsuzaki
    • Satoru KaseYoshinori IshiiEiji Matsuzaki
    • H01L21/00
    • H01L51/5259H01L51/5246
    • An organic electroluminescence device which can prevent the deterioration thereof attributed to moisture by preventing a desiccant from influencing organic electroluminescence elements is provided. The organic electroluminescence device includes: first and second substrates which are arranged to face each other in an opposed manner with a gap therebetween; organic electroluminescence elements which are formed on a first surface of the first substrate which faces the second substrate in an opposed manner; a desiccant which is formed on a second surface of the second substrate which faces the first substrate in an opposed manner; and a resin which is adhered to the first and second surfaces and covers the desiccant and the organic electroluminescence elements. The desiccant includes a portion which is arranged outside a region of the second surface which faces the organic electroluminescence elements in an opposed manner and surrounds the whole of the region, and the organic electroluminescence elements are isolated from the desiccant by way of the resin.
    • 提供了通过防止干燥剂影响有机电致发光元件而能够防止其归因于水分的劣化的有机电致发光器件。 有机电致发光元件包括:第一基板和第二基板,以相对的方式彼此面对地设置,间隔开; 形成在第一基板的与第二基板相对的第一表面上的有机电致发光元件; 形成在第二基板的与第一基板相对的面的第二表面上的干燥剂; 以及粘附到第一表面和第二表面并覆盖干燥剂和有机电致发光元件的树脂。 干燥剂包括以相对的方式布置在面向有机电致发光元件的第二表面的区域外部并围绕整个区域的部分,并且有机电致发光元件通过树脂与干燥剂分离。
    • 10. 发明授权
    • Organic electroluminescence display device and manufacturing method thereof
    • 有机电致发光显示装置及其制造方法
    • US08680766B2
    • 2014-03-25
    • US12264942
    • 2008-11-05
    • Eiji MatsuzakiYoshinori IshiiSatoru Kase
    • Eiji MatsuzakiYoshinori IshiiSatoru Kase
    • H01L51/50H01L51/52H01L51/56C23C16/00
    • H01L51/5256H01L51/524H01L2251/5315
    • An organic EL element section (1000) is formed on a circuit formation section (102) formed on a circuit board (101). The organic EL element section (1000) is covered with a protective layer (113) including an SiNxOy film. The SiNxOy film has infrared absorption characteristics including: an Si—O—Si stretching vibration absorption peak appearing at energy lower than 1,000 cm−1; an absorption intensity of an Si—N stretching vibration absorption peak appearing in the vicinity of around 870 cm−1 which is 0.75 or more times an absorption intensity of the Si—O—Si stretching vibration absorption peak; and an absorption peak intensity in a range of 2,000 to 4,000 cm−1, which is 5% or less of the absorption intensity of the Si—N stretching vibration absorption peak. Thus, the protective film having an excellent moisture-blocking property may be obtained, and life property of an organic EL display device may be improved.
    • 有机EL元件部(1000)形成在电路基板(101)上形成的电路形成部(102)上。 有机EL元件部分(1000)被包括SiN x O y膜的保护层(113)覆盖。 SiN x O y膜具有红外吸收特性,包括:以低于1000cm -1的能量出现的Si-O-Si伸缩振动吸收峰; 在约870cm -1附近出现的Si-N伸缩振动吸收峰的吸收强度是Si-O-Si伸缩振动吸收峰的吸收强度的0.75倍以上; 以及在2,000〜4000cm -1的范围内的吸收峰强度,其为Si-N伸缩振动吸收峰的吸收强度的5%以下。 因此,可以获得具有优异的防湿性的保护膜,并且可以提高有机EL显示装置的寿命。