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1. 发明授权

US08946680B2 TFET with nanowire source 有权
标题翻译：具有纳米线源的TFET
公开(公告)号：US08946680B2
公开(公告)日：2015-02-03
申请号：US13571657
申请日：2012-08-10
申请人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey Sleight
发明人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey Sleight
IPC分类号： H01L29/72 , H01L29/06 , B82Y10/00 , H01L29/08 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/786 , H01L29/739 , H01L29/78 , H01L29/40
CPC分类号： H01L29/0847 , B82Y10/00 , H01L29/0665 , H01L29/0669 , H01L29/0673 , H01L29/0895 , H01L29/402 , H01L29/42356 , H01L29/42392 , H01L29/66477 , H01L29/66977 , H01L29/7391 , H01L29/775 , H01L29/78 , H01L29/78618 , H01L29/78696 , Y10S977/723 , Y10S977/938
摘要： A tunnel field effect transistor (TFET) includes a source region, the source region comprising a first portion of a nanowire; a channel region, the channel region comprising a second portion of the nanowire; a drain region, the drain region comprising a portion of a silicon pad, the silicon pad being located adjacent to the channel region; and a gate configured such that the gate surrounds the channel region and at least a portion of the source region.
摘要翻译：隧道场效应晶体管（TFET）包括源区，源区包括纳米线的第一部分; 沟道区，所述沟道区包括纳米线的第二部分; 漏极区域，所述漏极区域包括硅衬垫的一部分，所述硅衬垫位于所述沟道区域附近; 以及栅极，其被配置为使得所述栅极围绕所述沟道区域和所述源极区域的至少一部分。

2. 发明申请

US20110278542A1 TFET with Nanowire Source 有权
标题翻译： TFET与纳米线源
公开(公告)号：US20110278542A1
公开(公告)日：2011-11-17
申请号：US12777881
申请日：2010-05-11
申请人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey Sleight
发明人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey Sleight
IPC分类号： H01L29/775 , H01L21/335
CPC分类号： H01L29/0847 , B82Y10/00 , H01L29/0665 , H01L29/0669 , H01L29/0673 , H01L29/0895 , H01L29/402 , H01L29/42356 , H01L29/42392 , H01L29/66477 , H01L29/66977 , H01L29/7391 , H01L29/775 , H01L29/78 , H01L29/78618 , H01L29/78696 , Y10S977/723 , Y10S977/938
摘要： A tunnel field effect transistor (TFET) includes a source region, the source region comprising a first portion of a nanowire; a channel region, the channel region comprising a second portion of the nanowire; a drain region, the drain region comprising a portion of a silicon pad, the silicon pad being located adjacent to the channel region; and a gate configured such that the gate surrounds the channel region and at least a portion of the source region.
摘要翻译：隧道场效应晶体管（TFET）包括源区，源区包括纳米线的第一部分; 沟道区，所述沟道区包括纳米线的第二部分; 漏极区域，所述漏极区域包括硅衬垫的一部分，所述硅衬垫位于所述沟道区域附近; 以及栅极，其被配置为使得所述栅极围绕所述沟道区域和所述源极区域的至少一部分。

3. 发明申请

US20140239258A1 TFET with Nanowire Source 有权
标题翻译： TFET与纳米线源
公开(公告)号：US20140239258A1
公开(公告)日：2014-08-28
申请号：US13571657
申请日：2012-08-10
申请人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey Sleight
发明人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey Sleight
IPC分类号： H01L29/08 , H01L29/78 , H01L29/06
CPC分类号： H01L29/0847 , B82Y10/00 , H01L29/0665 , H01L29/0669 , H01L29/0673 , H01L29/0895 , H01L29/402 , H01L29/42356 , H01L29/42392 , H01L29/66477 , H01L29/66977 , H01L29/7391 , H01L29/775 , H01L29/78 , H01L29/78618 , H01L29/78696 , Y10S977/723 , Y10S977/938
摘要： A tunnel field effect transistor (TFET) includes a source region, the source region comprising a first portion of a nanowire; a channel region, the channel region comprising a second portion of the nanowire; a drain region, the drain region comprising a portion of a silicon pad, the silicon pad being located adjacent to the channel region; and a gate configured such that the gate surrounds the channel region and at least a portion of the source region.
摘要翻译：隧道场效应晶体管（TFET）包括源区，源区包括纳米线的第一部分; 沟道区，所述沟道区包括纳米线的第二部分; 漏极区域，所述漏极区域包括硅衬垫的一部分，所述硅衬垫位于所述沟道区域附近; 以及栅极，其被配置为使得所述栅极围绕所述沟道区域和所述源极区域的至少一部分。

4. 发明授权

US08343815B2 TFET with nanowire source 有权
公开(公告)号：US08343815B2
公开(公告)日：2013-01-01
申请号：US12777881
申请日：2010-05-11
申请人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey Sleight
发明人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey Sleight
IPC分类号： H01L29/72
CPC分类号： H01L29/0847 , B82Y10/00 , H01L29/0665 , H01L29/0669 , H01L29/0673 , H01L29/0895 , H01L29/402 , H01L29/42356 , H01L29/42392 , H01L29/66477 , H01L29/66977 , H01L29/7391 , H01L29/775 , H01L29/78 , H01L29/78618 , H01L29/78696 , Y10S977/723 , Y10S977/938
摘要： A tunnel field effect transistor (TFET) includes a source region, the source region comprising a first portion of a nanowire; a channel region, the channel region comprising a second portion of the nanowire; a drain region, the drain region comprising a portion of a silicon pad, the silicon pad being located adjacent to the channel region; and a gate configured such that the gate surrounds the channel region and at least a portion of the source region.

5. 发明授权

US08324030B2 Nanowire tunnel field effect transistors 有权
标题翻译：纳米线隧道场效应晶体管
公开(公告)号：US08324030B2
公开(公告)日：2012-12-04
申请号：US12778315
申请日：2010-05-12
申请人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey W. Sleight
发明人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey W. Sleight
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42392 , H01L29/78696
摘要： A method for forming a nanowire tunnel field effect transistor (FET) device includes forming a nanowire suspended by a first pad region and a second pad region, forming a gate around a portion of the nanowire, forming a protective spacer adjacent to sidewalls of the gate structure and around portions of the nanowire extending from the gate structure, implanting ions in a first portion of the exposed nanowire, removing a second portion of the exposed nanowire to form a cavity defined by the core portion of the nanowire surrounded by the gate structure and the spacer, exposing a silicon portion of the substrate, and epitaxially growing a doped semiconductor material in the cavity from exposed cross section of the nanowire, the second pad region, and the exposed silicon portion to connect the exposed cross sections of the nanowire to the second pad region.
摘要翻译：形成纳米线隧道场效应晶体管（FET）器件的方法包括形成由第一焊盘区域和第二焊盘区域悬挂的纳米线，在纳米线的一部分周围形成栅极，形成邻近栅极侧壁的保护隔离层结构和纳米线的周围部分从栅极结构延伸，将离子注入暴露的纳米线的第一部分中，去除暴露的纳米线的第二部分以形成由栅极结构包围的纳米线的核心部分限定的空腔，以及所述间隔物暴露所述衬底的硅部分，以及从所述纳米线，所述第二焊盘区域和暴露的硅部分的暴露截面外延生长所述腔中的掺杂半导体材料，以将所述纳米线的暴露的横截面与第二垫区域。

6. 发明申请

US20120273761A1 Nanowire Tunnel Field Effect Transistors 有权
标题翻译：纳米线隧道场效应晶体管
公开(公告)号：US20120273761A1
公开(公告)日：2012-11-01
申请号：US13541022
申请日：2012-07-03
申请人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey W. Sleight
发明人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey W. Sleight
IPC分类号： H01L29/775 , B82Y99/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42392 , H01L29/78696
摘要： A nanowire tunnel field effect transistor (FET) device includes a channel region including a silicon portion having a first distal end and a second distal end, the silicon portion is surrounded by a gate structure disposed circumferentially around the silicon portion, a drain region including an doped silicon portion extending from the first distal end, a portion of the doped silicon portion arranged in the channel region, a cavity defined by the second distal end of the silicon portion and an inner diameter of the gate structure, and a source region including a doped epi-silicon portion epitaxially extending from the second distal end of the silicon portion in the cavity, a first pad region, and a portion of a silicon substrate.
摘要翻译：纳米线隧道场效应晶体管（FET）器件包括沟道区域，该沟道区域包括具有第一远端和第二远端的硅部分，硅部分被围绕硅部分周向设置的栅极结构围绕，漏极区域包括从第一远端延伸的掺杂硅部分，布置在沟道区域中的掺杂硅部分的一部分，由硅部分的第二远端限定的空腔和栅极结构的内径，以及源区域，从空腔中的硅部分的第二远端外延延伸的掺杂外延硅部分，第一焊盘区域和硅衬底的一部分。

7. 发明申请

US20110278546A1 Nanowire Tunnel Field Effect Transistors 有权
标题翻译：纳米线隧道场效应晶体管
公开(公告)号：US20110278546A1
公开(公告)日：2011-11-17
申请号：US12778315
申请日：2010-05-12
申请人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey W. Sleight
发明人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey W. Sleight
IPC分类号： H01L29/78 , H01L49/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42392 , H01L29/78696
摘要： A method for forming a nanowire tunnel field effect transistor (FET) device includes forming a nanowire suspended by a first pad region and a second pad region, forming a gate around a portion of the nanowire, forming a protective spacer adjacent to sidewalls of the gate structure and around portions of the nanowire extending from the gate structure, implanting ions in a first portion of the exposed nanowire, removing a second portion of the exposed nanowire to form a cavity defined by the core portion of the nanowire surrounded by the gate structure and the spacer, exposing a silicon portion of the substrate, and epitaxially growing a doped semiconductor material in the cavity from exposed cross section of the nanowire, the second pad region, and the exposed silicon portion to connect the exposed cross sections of the nanowire to the second pad region.
摘要翻译：形成纳米线隧道场效应晶体管（FET）器件的方法包括形成由第一焊盘区域和第二焊盘区域悬挂的纳米线，在纳米线的一部分周围形成栅极，形成邻近栅极侧壁的保护隔离层结构和纳米线的周围部分从栅极结构延伸，将离子注入暴露的纳米线的第一部分，去除暴露的纳米线的第二部分以形成由栅极结构包围的纳米线的核心部分限定的空腔;以及所述间隔物暴露所述衬底的硅部分，以及从所述纳米线，所述第二焊盘区域和暴露的硅部分的暴露截面外延生长所述腔中的掺杂半导体材料，以将所述纳米线的暴露的横截面与第二垫区域。

8. 发明授权

US08723162B2 Nanowire tunnel field effect transistors 有权
标题翻译：纳米线隧道场效应晶体管
公开(公告)号：US08723162B2
公开(公告)日：2014-05-13
申请号：US13541022
申请日：2012-07-03
申请人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey W. Sleight
发明人： Sarunya Bangsaruntip , Isaac Lauer , Amlan Majumdar , Jeffrey W. Sleight
IPC分类号： H01L29/06
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42392 , H01L29/78696
摘要： A nanowire tunnel field effect transistor (FET) device includes a channel region including a silicon portion having a first distal end and a second distal end, the silicon portion is surrounded by a gate structure disposed circumferentially around the silicon portion, a drain region including an doped silicon portion extending from the first distal end, a portion of the doped silicon portion arranged in the channel region, a cavity defined by the second distal end of the silicon portion and an inner diameter of the gate structure, and a source region including a doped epi-silicon portion epitaxially extending from the second distal end of the silicon portion in the cavity, a first pad region, and a portion of a silicon substrate.
摘要翻译：纳米线隧道场效应晶体管（FET）器件包括沟道区域，该沟道区域包括具有第一远端和第二远端的硅部分，硅部分被围绕硅部分周向设置的栅极结构围绕，漏极区域包括从第一远端延伸的掺杂硅部分，布置在沟道区域中的掺杂硅部分的一部分，由硅部分的第二远端限定的空腔和栅极结构的内径，以及源区域，从空腔中的硅部分的第二远端外延延伸的掺杂外延硅部分，第一焊盘区域和硅衬底的一部分。

9. 发明授权

US08324940B2 Nanowire circuits in matched devices 有权
标题翻译：纳米线电路在匹配的设备
公开(公告)号：US08324940B2
公开(公告)日：2012-12-04
申请号：US12758939
申请日：2010-04-13
申请人： Sarunya Bangsaruntip , Guy Cohen , Amlan Majumdar , Jeffrey W. Sleight
发明人： Sarunya Bangsaruntip , Guy Cohen , Amlan Majumdar , Jeffrey W. Sleight
IPC分类号： H03K19/0948
CPC分类号： H03K19/20 , B82Y10/00 , G11C11/412 , G11C11/54 , H01L27/092 , H01L27/11 , H01L27/1104 , H01L27/12 , H01L29/0665 , H01L29/0673 , H01L29/775 , H01L29/78696
摘要： An inverter device includes a first nanowire connected to a voltage source node and a ground node, a first p-type field effect transistor (pFET) device having a gate disposed on the first nanowire, and a first n-type field effect transistor (nFET) device having a gate disposed on the first nanowire.
摘要翻译：逆变器装置包括连接到电压源节点和接地节点的第一纳米线，具有设置在第一纳米线上的栅极的第一p型场效应晶体管（pFET）器件和第一n型场效应晶体管（nFET ）器件，其具有设置在第一纳米线上的栅极。

10. 发明申请

US20110278543A1 GENERATION OF MUTIPLE DIAMETER NANOWIRE FIELD EFFECT TRANSISTORS 有权
标题翻译：多重直径纳米效应晶体管的产生
公开(公告)号：US20110278543A1
公开(公告)日：2011-11-17
申请号：US12778517
申请日：2010-05-12
申请人： Sarunya Bangsaruntip , Guy M. Cohen , Amlan Majumdar , Jeffrey W. Sleight
发明人： Sarunya Bangsaruntip , Guy M. Cohen , Amlan Majumdar , Jeffrey W. Sleight
IPC分类号： H01L29/775 , H01L21/336
CPC分类号： H01L29/0669 , B82Y10/00 , H01L21/84 , H01L27/1203 , H01L29/0665 , H01L29/0673 , H01L29/42392 , H01L29/775 , H01L29/78696
摘要： A method of modifying a wafer having semiconductor disposed on an insulator is provided and includes establishing first and second regions of the wafer with different initial semiconductor thicknesses, forming pairs of semiconductor pads connected via respective nanowire channels at each of the first and second regions and reshaping the nanowire channels into nanowires each having a respective differing thickness reflective of the different initial semiconductor thicknesses at each of the first and second regions.
摘要翻译：提供了一种修改具有设置在绝缘体上的半导体的晶片的方法，包括以不同的初始半导体厚度建立晶片的第一和第二区域，形成经由每个第一和第二区域上的相应纳米线通道连接的半导体焊盘对，并重塑纳米线通道进入纳米线，每个纳米线具有反映第一和第二区域中的每一个处的不同初始半导体厚度的各自不同的厚度。

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