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    • 2. 发明授权
    • Method of fabricating a linearized output driver and terminator
    • 制造线性化输出驱动器和终端器的方法
    • US07250333B2
    • 2007-07-31
    • US10394977
    • 2003-03-20
    • Sanjay DabralKrishna Seshan
    • Sanjay DabralKrishna Seshan
    • H01L21/8234H01L21/8244
    • H01L29/66659H01L29/7835Y02P80/30
    • A method and apparatus for a linearized output driver and terminator is described. In one embodiment the method includes forming a gate electrode on a substrate, the portion of the substrate covered by the gate electrode defining a channel. The method further includes forming a first source/drain doped region on laterally opposed sides of the gate electrode in the substrate. The method also includes forming a spacer on laterally opposed sides of the gate electrode on the substrate. The method also includes forming a linearized drain contact region at a location within the first source/drain doped region sufficiently distant from the gate electrode to define a series resistor in the first source/drain doped region disposed between the gate electrode and the linearized drain contact area based on an expected resistivity of the source/drain doped region, the series resistor coupled electrically to the channel.
    • 描述了用于线性化输出驱动器和终止器的方法和装置。 在一个实施例中,该方法包括在衬底上形成栅电极,衬底的由栅电极覆盖的部分限定沟道。 该方法还包括在衬底的栅电极的横向相对侧上形成第一源极/漏极掺杂区域。 该方法还包括在基板上的栅电极的横向相对侧上形成间隔物。 该方法还包括在与栅电极充分远的第一源极/漏极掺杂区域内的位置处形成线性化的漏极接触区域,以在布置在栅极电极和线性化漏极接触之间的第一源极/漏极掺杂区域中限定串联电阻器 基于源极/漏极掺杂区域的预期电阻率的区域,串联电阻器电连接到沟道。
    • 6. 发明授权
    • Method and apparatus for a linearized output driver and terminator
    • 线性化输出驱动器和终端器的方法和装置
    • US06646324B1
    • 2003-11-11
    • US09609434
    • 2000-06-30
    • Sanjay DabralKrishna Seshan
    • Sanjay DabralKrishna Seshan
    • H01L2900
    • H01L29/66659H01L29/7835Y02P80/30
    • A method and apparatus for a linearized output driver and terminator is described. In one embodiment the method includes forming a gate electrode on a substrate, the portion of the substrate covered by the gate electrode defining a channel. The method further includes forming a first source/drain doped region on laterally opposed sides of the gate electrode in the substrate. The method also includes forming a spacer on laterally opposed sides of the gate electrode on the substrate. The method also includes forming a linearized drain contact region at a location within the first source/drain doped region sufficiently distant from the gate electrode to define a series resistor in the first source/drain doped region disposed between the gate electrode and the linearized drain contact area based on an expected resistivity of the source/drain doped region, the series resistor coupled electrically to the channel.
    • 描述了用于线性化输出驱动器和终止器的方法和装置。 在一个实施例中,该方法包括在衬底上形成栅电极,衬底的由栅电极覆盖的部分限定沟道。 该方法还包括在衬底的栅电极的横向相对侧上形成第一源极/漏极掺杂区域。 该方法还包括在基板上的栅电极的横向相对侧上形成间隔物。 该方法还包括在与栅电极充分远的第一源极/漏极掺杂区域内的位置处形成线性化的漏极接触区域,以在布置在栅极电极和线性化漏极接触之间的第一源极/漏极掺杂区域中限定串联电阻器 基于源极/漏极掺杂区域的预期电阻率的区域,串联电阻器电连接到沟道。