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1. 发明授权

US5399518A Method for manufacturing a multiple walled capacitor of a semiconductor device 失效
标题翻译：制造半导体器件的多层电容器的方法
公开(公告)号：US5399518A
公开(公告)日：1995-03-21
申请号：US91369
申请日：1993-07-15
申请人： Sang-pil Sim , Joo-young Yun , Chang-kyu Hwang , Jeong-gil Lee , Chul-ho Shin , Won-woo Lee
发明人： Sang-pil Sim , Joo-young Yun , Chang-kyu Hwang , Jeong-gil Lee , Chul-ho Shin , Won-woo Lee
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L21/70 , H01L27/00
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/91 , H01L28/92
摘要： A method for manufacturing a double-cylindrical storage electrode of a capacitor of a semiconductor memory device, utilizes an outer etching mask for forming an outer cylinder and an inner etching mask for forming an inner cylinder. After forming a conductive structure on a semiconductor substrate, an outer etching mask for forming an outer cylinder and an inner etching mask for forming an inner cylinder are formed on the conductive structure. Then, the conductive structure is anisotropically etched using the outer and inner etching masks, thereby forming a double-cylindrical first electrode. Since a double-cylindrical storage electrode can be obtained from a single conductive layer, the influence of native oxidation circumvented. In addition, the double-cylindrical storage electrode of the capacitor according to the present invention decreases the risk of structural fragmenting because the electrode is obtained from one material layer, instead of a combination of layers as is conventionally-known. Also, the storage electrode of the present invention has no sharp edges, so that leakage current can be minimized or avoided.
摘要翻译：一种用于制造半导体存储器件的电容器的双圆柱形存储电极的方法，利用用于形成外圆筒的外蚀刻掩模和用于形成内筒的内蚀刻掩模。在半导体衬底上形成导电结构之后，在导电结构上形成用于形成外筒的外蚀刻掩模和用于形成内筒的内蚀刻掩模。然后，使用外蚀刻掩模和内蚀刻掩模对导电结构进行各向异性蚀刻，从而形成双圆柱形第一电极。由于可以从单个导电层获得双圆柱形存储电极，因此避免了天然氧化的影响。此外，根据本发明的电容器的双圆柱形存储电极降低了结构碎裂的风险，因为电极是从一个材料层获得的，而不是如传统已知的层的组合。此外，本发明的存储电极没有尖锐的边缘，使得可以最小化或避免泄漏电流。

2. 发明授权

US08318412B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08318412B2
公开(公告)日：2012-11-27
申请号：US12871251
申请日：2010-08-30
申请人： Tokashiki Ken , Chul-ho Shin , Sang-Kuk Kim , Do-haing Lee , Dong-seok Lee
发明人： Tokashiki Ken , Chul-ho Shin , Sang-Kuk Kim , Do-haing Lee , Dong-seok Lee
IPC分类号： G03F7/26
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/31144 , H01L21/76816 , H01L27/10855
摘要： A semiconductor device is manufactured by a method including processes of trimming and molding resist patterns. A resist layer formed on a substrate is exposed and developed to form the resist patterns. The resist patterns are trimmed using a first gas plasma to change the profiles of the resist patterns. Widths of the trimmed resist patterns are increased using a second gas plasma to form processed resist patterns.
摘要翻译：通过包括修整和成型抗蚀剂图案的工艺的方法制造半导体器件。形成在基板上的抗蚀剂层被曝光和显影以形成抗蚀剂图案。使用第一气体等离子体来修整抗蚀剂图案以改变抗蚀剂图案的轮廓。使用第二气体等离子体增加修整的抗蚀剂图案的宽度以形成经处理的抗蚀剂图案。

3. 发明申请

US20110159442A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110159442A1
公开(公告)日：2011-06-30
申请号：US12871251
申请日：2010-08-30
申请人： Tokashiki Ken , Chul-ho Shin , Sang-Kuk Kim , Do-haing Lee , Dong-seok Lee
发明人： Tokashiki Ken , Chul-ho Shin , Sang-Kuk Kim , Do-haing Lee , Dong-seok Lee
IPC分类号： G03F7/20
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/31144 , H01L21/76816 , H01L27/10855
摘要： A semiconductor device is manufactured by a method including processes of trimming and molding resist patterns. A resist layer formed on a substrate is exposed and developed to form the resist patterns. The resist patterns are trimmed using a first gas plasma to change the profiles of the resist patterns. Widths of the trimmed resist patterns are increased using a second gas plasma to form processed resist patterns.
摘要翻译：通过包括修整和成型抗蚀剂图案的工艺的方法制造半导体器件。形成在基板上的抗蚀剂层被曝光和显影以形成抗蚀剂图案。使用第一气体等离子体来修整抗蚀剂图案以改变抗蚀剂图案的轮廓。使用第二气体等离子体增加修整的抗蚀剂图案的宽度以形成经处理的抗蚀剂图案。

4. 发明申请

US20060228895A1 Method of forming fine pitch photoresist patterns using double patterning technique 审中-公开
标题翻译：使用双重图案化技术形成细间距光刻胶图案的方法
公开(公告)号：US20060228895A1
公开(公告)日：2006-10-12
申请号：US11357131
申请日：2006-02-21
申请人： Yun-sook Chae , Gyung-jin Min , Chul-ho Shin , Sang-wook Kim
发明人： Yun-sook Chae , Gyung-jin Min , Chul-ho Shin , Sang-wook Kim
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/405 , H01L21/02167 , H01L21/02282 , H01L21/02304 , H01L21/31138 , H01L21/312
摘要： A method of forming a photoresist pattern comprises providing a semiconductor substrate on which a layer to be etched is formed. The method further comprises forming a first photoresist pattern on the layer to be etched, processing the first photoresist pattern with hydrogen bromide (HBr) plasma, and forming a second photoresist pattern on the semiconductor substrate between the first photoresist patterns
摘要翻译：形成光致抗蚀剂图案的方法包括提供其上形成有待蚀刻的层的半导体衬底。该方法还包括在待蚀刻的层上形成第一光致抗蚀剂图案，用溴化氢（HBr）等离子体处理第一光致抗蚀剂图案，以及在半导体衬底上在第一光致抗蚀剂图案

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