专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08043952B2 Method of forming aluminum oxide layer and method of manufacturing charge trap memory device using the same 有权
标题翻译：形成氧化铝层的方法和使用其制造电荷陷阱存储器件的方法
公开(公告)号：US08043952B2
公开(公告)日：2011-10-25
申请号：US12153655
申请日：2008-05-22
申请人： Sang-moo Choi , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park , Eun-ha Lee , Jung-hun Sung
发明人： Sang-moo Choi , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park , Eun-ha Lee , Jung-hun Sung
IPC分类号： H01L21/3205 , H01L21/4763 , H01L21/8242 , H01L29/788
CPC分类号： H01L21/28282 , H01L21/02178 , H01L21/02263 , H01L21/02356 , H01L21/02362 , H01L21/31604 , H01L21/3162
摘要： Provided is a method of forming an aluminum oxide layer and a method of manufacturing a charge trap memory device using the same. The method of forming an aluminum oxide layer may include forming an amorphous aluminum oxide layer on an underlying layer, forming a crystalline auxiliary layer on the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer. Forming the crystalline auxiliary layer may include forming an amorphous auxiliary layer on the amorphous aluminum oxide layer; and crystallizing the amorphous auxiliary layer.
摘要翻译：提供一种形成氧化铝层的方法以及使用其形成电荷阱存储器件的方法。形成氧化铝层的方法可以包括在下层上形成非晶态氧化铝层，在非晶态氧化铝层上形成结晶性辅助层，并使无定形氧化铝层结晶。形成结晶辅助层可以包括在无定形氧化铝层上形成非晶态辅助层; 并使无定形辅助层结晶。

2. 发明申请

US20080087944A1 Charge trap memory device 审中-公开
标题翻译：电荷陷阱记忆装置
公开(公告)号：US20080087944A1
公开(公告)日：2008-04-17
申请号：US11905769
申请日：2007-10-04
申请人： Sang-min Shin , Kwang-soo Seol , Sang-Jin Park , Jung-hun Sung , Sang-moo Choi
发明人： Sang-min Shin , Kwang-soo Seol , Sang-Jin Park , Jung-hun Sung , Sang-moo Choi
IPC分类号： H01L29/792
CPC分类号： H01L29/42332 , H01L29/40114
摘要： A charge trap memory device may include a tunnel insulating layer formed on a substrate. A charge trap layer may be formed on the tunnel insulating layer, wherein the charge trap layer is a higher-k dielectric insulating layer doped with one or more transition metals. The tunneling insulating layer may be relatively non-reactive with respect to metals in the charge trap layer. The tunneling insulating layer may also reduce or prevent metals in the charge trap layer from diffusing into the substrate.
摘要翻译：电荷陷阱存储器件可以包括形成在衬底上的隧道绝缘层。电荷陷阱层可以形成在隧道绝缘层上，其中电荷陷阱层是掺杂有一种或多种过渡金属的较高k介电绝缘层。隧穿绝缘层相对于电荷陷阱层中的金属可能是相对不反应的。隧道绝缘层还可以减少或防止电荷陷阱层中的金属扩散到衬底中。

3. 发明授权

US07760551B2 Method of programming nonvolatile memory device 有权
标题翻译：非易失性存储器件编程方法
公开(公告)号：US07760551B2
公开(公告)日：2010-07-20
申请号：US12232082
申请日：2008-09-10
申请人： Sang-jin Park , Kwang-soo Seol , Ki-hwan Choi , Jung-hun Sung , Sang-moo Choi
发明人： Sang-jin Park , Kwang-soo Seol , Ki-hwan Choi , Jung-hun Sung , Sang-moo Choi
IPC分类号： G11C16/04
CPC分类号： G11C16/0483 , G11C16/10 , G11C16/3413 , G11C16/3454 , G11C16/3486
摘要： A method of programming a nonvolatile memory device may include applying a program voltage to a memory cell. A supplementary pulse may be applied to the memory cell to facilitate thermalization of charges after the application of the program voltage. A recovery voltage may be applied to the memory cell after the application of the supplementary pulse. A program state of the memory cell may be verified using a verification voltage after the application of the recovery voltage.
摘要翻译：非易失性存储器件的编程方法可以包括将程序电压施加到存储单元。补充脉冲可以施加到存储器单元，以便在施加编程电压之后促进电荷的热化。在施加补充脉冲之后，可以将复原电压施加到存储单元。可以在施加恢复电压之后使用验证电压来验证存储器单元的编程状态。

4. 发明申请

US20090071934A1 Crystalline aluminum oxide layers having increased energy band gap, charge trap layer devices including crystalline aluminum oxide layers, and methods of manufacturing the same 失效
标题翻译：具有增加的能带隙的结晶氧化铝层，包括结晶氧化铝层的电荷陷阱层器件及其制造方法
公开(公告)号：US20090071934A1
公开(公告)日：2009-03-19
申请号：US12219987
申请日：2008-07-31
申请人： Sang-moo Choi , Jung-hun Sung , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park
发明人： Sang-moo Choi , Jung-hun Sung , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park
IPC分类号： B44C1/22 , B05D3/10 , C23C14/08 , C23C16/00
CPC分类号： H01L21/28273 , H01L21/28282 , H01L29/4234 , H01L29/513 , H01L29/518
摘要： Crystalline aluminum oxide layers having increased energy band gap, charge trap memory devices including crystalline aluminum oxide layers and methods of manufacturing the same are provided. A method of forming an aluminum oxide layer having an increased energy band gap includes forming an amorphous aluminum oxide layer on a lower film, introducing hydrogen (H) or hydroxyl group (OH) into the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer including the H or OH.
摘要翻译：提供具有增加的能带隙的结晶氧化铝层，包括结晶氧化铝层的电荷陷阱存储器件及其制造方法。形成具有增加的能带隙的氧化铝层的方法包括在下膜上形成无定形氧化铝层，将氢（H）或羟基（OH）引入到无定形氧化铝层中，并使非晶态氧化铝层包括H或OH。

5. 发明申请

US20090067247A1 Method of programming nonvolatile memory device 有权
标题翻译：非易失性存储器件编程方法
公开(公告)号：US20090067247A1
公开(公告)日：2009-03-12
申请号：US12232082
申请日：2008-09-10
申请人： Sang-jin Park , Kwang-soo Seol , Ki-hwan Choi , Jung-hun Sung , Sang-moo Choi
发明人： Sang-jin Park , Kwang-soo Seol , Ki-hwan Choi , Jung-hun Sung , Sang-moo Choi
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/0483 , G11C16/10 , G11C16/3413 , G11C16/3454 , G11C16/3486
摘要： A method of programming a nonvolatile memory device may include applying a program voltage to a memory cell. A supplementary pulse may be applied to the memory cell to facilitate thermalization of charges after the application of the program voltage. A recovery voltage may be applied to the memory cell after the application of the supplementary pulse. A program state of the memory cell may be verified using a verification voltage after the application of the recovery voltage.
摘要翻译：非易失性存储器件的编程方法可以包括将程序电压施加到存储单元。补充脉冲可以施加到存储器单元，以便在施加编程电压之后促进电荷的热化。在施加补充脉冲之后，可以将复原电压施加到存储单元。可以在施加恢复电压之后使用验证电压来验证存储器单元的编程状态。

6. 发明申请

US20090021979A1 Gate stack, capacitorless dynamic random access memory including the gate stack and methods of manufacturing and operating the same 审中-公开
标题翻译：门堆叠，无电容动态随机存取存储器，包括栅极堆栈及其制造和操作方法
公开(公告)号：US20090021979A1
公开(公告)日：2009-01-22
申请号：US12007012
申请日：2008-01-04
申请人： Jung-hun Sung , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park , Sang-moo Choi
发明人： Jung-hun Sung , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park , Sang-moo Choi
IPC分类号： G11C11/40 , H01L27/108 , H01L21/8242
CPC分类号： H01L27/108 , G11C11/404 , H01L29/4234 , H01L29/792
摘要： Provided are a gate stack, a capacitorless dynamic random access memory (DRAM) including the gate stack and methods of manufacturing and operating the same. The gate stack for a capacitorless DRAM may include a tunnel insulating layer on a substrate, a first charge trapping layer on the tunnel insulating layer, an interlayer insulating layer on the first charge trapping layer, a second charge trapping layer on the interlayer insulating layer, a blocking insulating layer on the second charge trapping layer, and a gate electrode on the blocking insulating layer. The capacitorless DRAM may include the gate stack on the substrate, and a source and a drain in the substrate on both sides of the gate stack.
摘要翻译：提供了一种栅极堆叠，包括栅极堆叠的无电容动态随机存取存储器（DRAM）及其制造和操作的方法。用于无电容器DRAM的栅极堆叠可以包括衬底上的隧道绝缘层，隧道绝缘层上的第一电荷俘获层，第一电荷俘获层上的层间绝缘层，层间绝缘层上的第二电荷俘获层，第二电荷俘获层上的阻挡绝缘层，以及阻挡绝缘层上的栅电极。无电容器DRAM可以包括衬底上的栅极堆叠，以及栅极叠层两侧的衬底中的源极和漏极。

7. 发明授权

US08062978B2 Crystalline aluminum oxide layers having increased energy band gap, charge trap layer devices including crystalline aluminum oxide layers, and methods of manufacturing the same 失效
标题翻译：具有增加的能带隙的结晶氧化铝层，包括结晶氧化铝层的电荷陷阱层器件及其制造方法
公开(公告)号：US08062978B2
公开(公告)日：2011-11-22
申请号：US12219987
申请日：2008-07-31
申请人： Sang-moo Choi , Jung-hun Sung , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park
发明人： Sang-moo Choi , Jung-hun Sung , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park
IPC分类号： H01L21/44
CPC分类号： H01L21/28273 , H01L21/28282 , H01L29/4234 , H01L29/513 , H01L29/518
摘要： Crystalline aluminum oxide layers having increased energy band gap, charge trap memory devices including crystalline aluminum oxide layers and methods of manufacturing the same are provided. A method of forming an aluminum oxide layer having an increased energy band gap includes forming an amorphous aluminum oxide layer on a lower film, introducing hydrogen (H) or hydroxyl group (OH) into the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer including the H or OH.
摘要翻译：提供具有增加的能带隙的结晶氧化铝层，包括结晶氧化铝层的电荷陷阱存储器件及其制造方法。形成具有增加的能带隙的氧化铝层的方法包括在下膜上形成无定形氧化铝层，将氢（H）或羟基（OH）引入到无定形氧化铝层中，并使非晶态氧化铝层包括H或OH。

8. 发明申请

US20090050954A1 Non-volatile memory device including charge trap layer and method of manufacturing the same 审中-公开
标题翻译：包括电荷陷阱层的非易失性存储器件及其制造方法
公开(公告)号：US20090050954A1
公开(公告)日：2009-02-26
申请号：US12071351
申请日：2008-02-20
申请人： Sang-moo Choi , Kwang-soo Seol , Sang-jin Park , Jung-hun Sung
发明人： Sang-moo Choi , Kwang-soo Seol , Sang-jin Park , Jung-hun Sung
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/792 , H01L29/40117
摘要： Provided are a non-volatile memory device and a method of manufacturing the non-volatile memory device. The non-volatile memory device includes a charge trap layer having a crystalline material. In the method, a tunneling insulating layer is formed on a substrate, and a crystalline charge trap layer is formed on the tunneling insulating layer.
摘要翻译：提供了非易失性存储器件和制造非易失性存储器件的方法。非易失性存储器件包括具有结晶材料的电荷陷阱层。在该方法中，在基板上形成隧道绝缘层，在隧道绝缘层上形成结晶电荷陷阱层。

9. 发明申请

US20090061613A1 Method of forming aluminum oxide layer and method of manufacturing charge trap memory device using the same 有权
标题翻译：形成氧化铝层的方法和使用其制造电荷陷阱存储器件的方法
公开(公告)号：US20090061613A1
公开(公告)日：2009-03-05
申请号：US12153655
申请日：2008-05-22
申请人： Sang-moo Choi , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park , Eun-ha Lee , Jung-hun Sung
发明人： Sang-moo Choi , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park , Eun-ha Lee , Jung-hun Sung
IPC分类号： H01L21/3205 , H01L21/44
CPC分类号： H01L21/28282 , H01L21/02178 , H01L21/02263 , H01L21/02356 , H01L21/02362 , H01L21/31604 , H01L21/3162
摘要： Provided is a method of forming an aluminum oxide layer and a method of manufacturing a charge trap memory device using the same. The method of forming an aluminum oxide layer may include forming an amorphous aluminum oxide layer on an underlying layer, forming a crystalline auxiliary layer on the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer. Forming the crystalline auxiliary layer may include forming an amorphous auxiliary layer on the amorphous aluminum oxide layer; and crystallizing the amorphous auxiliary layer.
摘要翻译：提供一种形成氧化铝层的方法以及使用其形成电荷阱存储装置的方法。形成氧化铝层的方法可以包括在下层上形成非晶态氧化铝层，在非晶态氧化铝层上形成结晶性辅助层，并使无定形氧化铝层结晶。形成结晶辅助层可以包括在无定形氧化铝层上形成非晶态辅助层; 并使无定形辅助层结晶。

10. 发明申请

US20090045455A1 Nonvolatile memory device and method of fabricating the same 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20090045455A1
公开(公告)日：2009-02-19
申请号：US12219465
申请日：2008-07-23
申请人： Kwang-soo Seol , Sang-jin Park , Sang-moo Choi , Hyo-sug Lee , Jung-hun Sung
发明人： Kwang-soo Seol , Sang-jin Park , Sang-moo Choi , Hyo-sug Lee , Jung-hun Sung
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/4234 , H01L29/40117 , H01L29/513 , H01L29/66833
摘要： Example embodiments relate to nonvolatile semiconductor memory devices using an electric charge storing layer as a storage node and fabrication methods thereof. An electric charge trap type nonvolatile memory device may include a tunneling film, an electric charge storing layer, a blocking insulation film, and a gate electrode. The blocking insulation film may be an aluminum oxide having an energy band gap larger than that of a γ-phase aluminum oxide film. An α-phase crystalline aluminum oxide film as a blocking insulation film may have an energy band gap of about 7.0 eV or more along with fewer defects. The crystalline aluminum oxide film may be formed by providing a source film (e.g., AlF3 film) on or within a preliminary blocking insulation film (e.g., amorphous aluminum oxide film) and performing a heat treatment. Alternatively, an aluminum compound (e.g., AlF3) may be introduced into the preliminary blocking insulation film by other diffusion methods or ion implantation. Accordingly, the ability of the memory device to maintain electric charges may be improved, the operating voltage for programming and erasing may be lowered, and the operating speed may be increased.
摘要翻译：示例性实施例涉及使用电荷存储层作为存储节点的非易失性半导体存储器件及其制造方法。电荷阱型非易失性存储器件可以包括隧穿膜，电荷存储层，阻挡绝缘膜和栅电极。阻挡绝缘膜可以是具有比γ相氧化铝膜的能带隙大的能带隙的氧化铝。作为阻挡绝缘膜的α相结晶氧化铝膜可以具有约7.0eV以上的能带隙和更少的缺陷。结晶氧化铝膜可以通过在预先隔离绝缘膜（例如无定形氧化铝膜）上或内部提供源膜（例如，AlF 3膜）并进行热处理而形成。或者，可以通过其它扩散方法或离子注入将铝化合物（例如，AlF 3）引入到初步阻挡绝缘膜中。因此，可以提高存储器件保持电荷的能力，可以降低用于编程和擦除的操作电压，并且可以提高操作速度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式