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1. 发明申请

US20070024391A1 Monolithic duplexer and fabrication method thereof 有权
标题翻译：单片双工器及其制造方法
公开(公告)号：US20070024391A1
公开(公告)日：2007-02-01
申请号：US11392624
申请日：2006-03-30
申请人： Sang-chul Sul , Duck-hwan Kim , Chul-soo Kim , In-sang Song , Moon-chul Lee , Kyu-dong Jung , Jea-shik Shin
发明人： Sang-chul Sul , Duck-hwan Kim , Chul-soo Kim , In-sang Song , Moon-chul Lee , Kyu-dong Jung , Jea-shik Shin
IPC分类号： H03H7/46
CPC分类号： H03H3/02 , H03H9/0571 , H03H9/706
摘要： A monolithic duplexer and a fabrication method thereof. The monolithic duplexer includes a device wafer, a plurality of elements distanced from each other on a top portion of a device wafer, first sealing parts formed on the top portion of the device wafer, and a plurality of first ground planes formed between the plurality of elements. A cap wafer is also provided having an etched area for packaging the device wafer, a plurality of protrusion parts, a plurality of ground posts, and cavities. Second sealing parts are formed on a bottom portion of the protrusion parts, and a plurality of second ground planes cover the plurality of ground posts. Via holes vertically penetrate the cap wafer to connect to the plurality of the second ground planes, and ground terminals are formed on top portions of the via holes. The first sealing parts and the first ground planes are attached to the second sealing parts and the second ground planes, respectively.
摘要翻译：一种单片双工器及其制造方法。单片双工器包括器件晶片，在器件晶片的顶部彼此远离的多个元件，形成在器件晶片的顶部上的第一密封部分和形成在器件晶片的顶部之间的多个第一接地平面元素。还提供了盖晶片，其具有用于封装器件晶片，多个突出部分，多个接地柱和空腔的蚀刻区域。第二密封部分形成在突出部分的底部上，并且多个第二接地平面覆盖多个接地柱。通孔垂直穿过盖晶片以连接到多个第二接地平面，并且接地端子形成在通孔的顶部上。第一密封部分和第一接地平面分别附接到第二密封部分和第二接地平面。

2. 发明授权

US07432781B2 Monolithic duplexer and fabrication method thereof 有权
标题翻译：单片双工器及其制造方法
公开(公告)号：US07432781B2
公开(公告)日：2008-10-07
申请号：US11392624
申请日：2006-03-30
申请人： Sang-chul Sul , Duck-hwan Kim , Chul-soo Kim , In-sang Song , Moon-chul Lee , Kyu-dong Jung , Jea-shik Shin
发明人： Sang-chul Sul , Duck-hwan Kim , Chul-soo Kim , In-sang Song , Moon-chul Lee , Kyu-dong Jung , Jea-shik Shin
IPC分类号： H03H7/46
CPC分类号： H03H3/02 , H03H9/0571 , H03H9/706
摘要： A monolithic duplexer and a fabrication method thereof. The monolithic duplexer includes a device wafer, a plurality of elements distanced from each other on a top portion of a device wafer, first sealing parts formed on the top portion of the device wafer, and a plurality of first ground planes formed between the plurality of elements. A cap wafer is also provided having an etched area for packaging the device wafer, a plurality of protrusion parts, a plurality of ground posts, and cavities. Second sealing parts are formed on a bottom portion of the protrusion parts, and a plurality of second ground planes cover the plurality of ground posts. Via holes vertically penetrate the cap wafer to connect to the plurality of the second ground planes, and ground terminals are formed on top portions of the via holes. The first sealing parts and the first ground planes are attached to the second sealing parts and the second ground planes, respectively.
摘要翻译：一种单片双工器及其制造方法。单片双工器包括器件晶片，在器件晶片的顶部彼此远离的多个元件，形成在器件晶片的顶部上的第一密封部分和形成在器件晶片的顶部之间的多个第一接地平面元素。还提供了盖晶片，其具有用于封装器件晶片，多个突出部分，多个接地柱和空腔的蚀刻区域。第二密封部分形成在突出部分的底部上，并且多个第二接地平面覆盖多个接地柱。通孔垂直穿过盖晶片以连接到多个第二接地平面，并且接地端子形成在通孔的顶部上。第一密封部分和第一接地平面分别附接到第二密封部分和第二接地平面。

3. 发明申请

US20070024396A1 Integrated filter including FBAR and saw resonator and fabrication method therefor 有权
标题翻译：集成滤波器，包括FBAR和锯片谐振器及其制造方法
公开(公告)号：US20070024396A1
公开(公告)日：2007-02-01
申请号：US11448707
申请日：2006-06-08
申请人： Kuang-woo Nam , Kook-hyun Sunwoo , In-sang Song , Sang-wook Kwon , Duck-hwan Kim , Chul-soo Kim , Sang-chul Sul , Yun-kwon Park , Hae-seok Park , Jea-shik Shin , Dong-ha Shim , Young-tack Hong , Jong-seok Kim , Seok-mo Chang , Seok-Chul Yun
发明人： Kuang-woo Nam , Kook-hyun Sunwoo , In-sang Song , Sang-wook Kwon , Duck-hwan Kim , Chul-soo Kim , Sang-chul Sul , Yun-kwon Park , Hae-seok Park , Jea-shik Shin , Dong-ha Shim , Young-tack Hong , Jong-seok Kim , Seok-mo Chang , Seok-Chul Yun
IPC分类号： H03H9/56
CPC分类号： H03H9/588 , H03H3/02 , H03H9/02228 , H03H2003/0071
摘要： An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.
摘要翻译：一种包括膜体声波谐振器（FBAR）和表面声波（SAW）谐振器的集成滤波器以及一体化滤波器的制造方法。集成滤波器包括：基板; 位于所述基板的上表面上的预定第一区域中的第一电极; 位于所述第一电极上的第一压电层; 位于所述第一压电层上的第二电极; 位于所述基板的上表面上的预定的第二区域中的第二压电层; 和位于第二压电层上的至少一个数字间换能器（IDT）电极。 IDT电极包括：在第二压电层上形成为梳状结构的第一IDT电极; 以及在第二压电层上形成为梳状结构的第二IDT电极，以便与第一IDT电极啮合。第一和第二压电层由相同的材料形成。因此，可以使在各种频带中工作的集成滤波器紧凑。

4. 发明授权

US07439825B2 Integrated filter including FBAR and saw resonator and fabrication method therefor 有权
标题翻译：集成滤波器，包括FBAR和锯片谐振器及其制造方法
公开(公告)号：US07439825B2
公开(公告)日：2008-10-21
申请号：US11448707
申请日：2006-06-08
申请人： Kuang-woo Nam , Kook-hyun Sunwoo , In-sang Song , Sang-wook Kwon , Duck-hwan Kim , Chul-soo Kim , Sang-chul Sul , Yun-kwon Park , Hae-seok Park , Jea-shik Shin , Dong-ha Shim , Young-tack Hong , Jong-seok Kim , Seok-mo Chang , Seok-chul Yun
发明人： Kuang-woo Nam , Kook-hyun Sunwoo , In-sang Song , Sang-wook Kwon , Duck-hwan Kim , Chul-soo Kim , Sang-chul Sul , Yun-kwon Park , Hae-seok Park , Jea-shik Shin , Dong-ha Shim , Young-tack Hong , Jong-seok Kim , Seok-mo Chang , Seok-chul Yun
IPC分类号： H03H9/56 , H03H9/54
CPC分类号： H03H9/588 , H03H3/02 , H03H9/02228 , H03H2003/0071
摘要： An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.
摘要翻译：一种包括膜体声波谐振器（FBAR）和表面声波（SAW）谐振器的集成滤波器以及一体化滤波器的制造方法。集成滤波器包括：基板; 位于所述基板的上表面上的预定第一区域中的第一电极; 位于所述第一电极上的第一压电层; 位于所述第一压电层上的第二电极; 位于所述基板的上表面上的预定的第二区域中的第二压电层; 和位于第二压电层上的至少一个数字间换能器（IDT）电极。 IDT电极包括：在第二压电层上形成为梳状结构的第一IDT电极; 以及在第二压电层上形成为梳状结构的第二IDT电极，以便与第一IDT电极啮合。第一和第二压电层由相同的材料形成。因此，可以使在各种频带中工作的集成滤波器紧凑。

5. 发明申请

US20090114513A1 MICRO ELECTROMECHANICAL SYSTEM (MEMS) SWITCH 审中-公开
标题翻译：微机电系统（MEMS）开关
公开(公告)号：US20090114513A1
公开(公告)日：2009-05-07
申请号：US12102442
申请日：2008-04-14
申请人： Chul-soo Kim , Byeoung-ju Ha , In-sang Song , Duck-hwan Kim , Yun-kwon Park , Jea-shik Shin
发明人： Chul-soo Kim , Byeoung-ju Ha , In-sang Song , Duck-hwan Kim , Yun-kwon Park , Jea-shik Shin
IPC分类号： H01H57/00
CPC分类号： H01H59/0009 , H01H2059/0027
摘要： A Micro ElectroMechanical System (MEMS) switch is provided. The MEMS switch includes a ground, a moving unit moveable according to a driving signal, for connecting the input to the output or disconnecting the input from the output, and an electrode unit arranged in the configuration of a protrusion formed on a portion of the round, to induce a leakage signal generated between the input and the output to move toward the ground.
摘要翻译：提供微机电系统（MEMS）开关。 MEMS开关包括接地，可根据驱动信号移动的移动单元，用于将输入连接到输出或从输出端断开输入;以及电极单元，其布置成形成在圆的一部分上的突起的构造以引起在输入和输出之间产生的泄漏信号朝向地面移动。

6. 发明申请

US20090025043A1 Multiband receiving apparatus and multiband transmitting apparatus using tunable filter 审中-公开
标题翻译：多频带接收装置和使用可调滤波器的多频带发送装置
公开(公告)号：US20090025043A1
公开(公告)日：2009-01-22
申请号：US11979681
申请日：2007-11-07
申请人： In-sang Song , Duck-hwan Kim , Chul-soo Kim , Yun-kwon Park , Jung-eun Lee , Jea-shik Shin
发明人： In-sang Song , Duck-hwan Kim , Chul-soo Kim , Yun-kwon Park , Jung-eun Lee , Jea-shik Shin
IPC分类号： H04N5/14
CPC分类号： H04B1/1027 , H03J3/06
摘要： A multiband receiving apparatus and multiband transmitting apparatus using a tunable band is provided. The receiving apparatus includes a receiving unit for receiving radio frequency (RF) signals, and a tunable filter unit for selectively outputting the received RF signals. As a result, a complicated RF transceiving system is simplified, and time and cost for developing and designing a transceiving apparatus are reduced.
摘要翻译：提供了一种使用可调谐带的多频带接收装置和多频带发送装置。接收装置包括用于接收射频（RF）信号的接收单元和用于选择性地输出所接收的RF信号的可调滤波器单元。结果，简化了RF收发系统的复杂化，减少了开发和设计收发设备的时间和成本。

7. 发明申请

US20090115553A1 TUNABLE RESONATOR USING FILM BULK ACOUSTIC RESONATOR (FBAR) 有权
标题翻译：使用电影大音量谐振器（FBAR）的谐振器
公开(公告)号：US20090115553A1
公开(公告)日：2009-05-07
申请号：US12048481
申请日：2008-03-14
申请人： Jea-shik SHIN , Yun-kwon Park , In-sang Song , Duck-hwan Kim , Chul-soo Kim
发明人： Jea-shik SHIN , Yun-kwon Park , In-sang Song , Duck-hwan Kim , Chul-soo Kim
IPC分类号： H03H9/54
CPC分类号： H03H9/171 , H03H2009/02173
摘要： A tunable resonator is provided. The tunable resonator includes a film bulk acoustic resonator (FBAR) for performing a resonance, and at least one driver which is arranged at a side of the FBAR and is deformed and brought into contact with the FBAR by an external signal, thereby changing a resonance frequency of the FBAR. Accordingly, a multiband integration and a one-chip manufacture can be implemented simply using a micro electro mechanical system (MEMS) technology and a mass production is possible.
摘要翻译：提供可调谐谐振器。可调谐谐振器包括用于进行谐振的膜体声波谐振器（FBAR）和至少一个驱动器，该驱动器布置在FBAR的一侧并通过外部信号变形并与FBAR接触，从而改变谐振 FBAR的频率。因此，可以简单地使用微机电系统（MEMS）技术来实现多频带集成和单芯片制造，并且可以批量生产。

8. 发明授权

US07423501B2 Film bulk acoustic wave resonator and manufacturing method thererof 有权
标题翻译：薄膜体声波谐振器及其制造方法
公开(公告)号：US07423501B2
公开(公告)日：2008-09-09
申请号：US11395298
申请日：2006-04-03
申请人： Duck-hwan Kim , Chul-soo Kim , Yun-kwon Park , Sang-chul Sul , Byeoung-ju Ha , In-sang Song
发明人： Duck-hwan Kim , Chul-soo Kim , Yun-kwon Park , Sang-chul Sul , Byeoung-ju Ha , In-sang Song
IPC分类号： H03H9/15 , H03H9/17 , H03H9/54
CPC分类号： H03H9/172 , H03H3/02 , H03H9/02015 , H03H9/02118
摘要： A film bulk acoustic resonator includes a substrate; a lower electrode formed on top of the substrate; a piezoelectric membrane formed on top of the lower electrode and having a crystallographic axis so inclined as to generate a total reflection when an acoustic wave advances toward the lower electrode; and an upper electrode formed on top of the piezoelectric membrane.
摘要翻译：薄膜体声波谐振器包括基板; 形成在基板顶部的下电极; 形成在所述下电极的顶部并具有如此倾斜的结晶轴以在声波向下电极前进时产生全反射的压电膜; 以及形成在压电膜的顶部上的上电极。

9. 发明申请

US20070013463A1 Film bulk acoustic wave resonator and manufacturing method thereof 有权
标题翻译：薄膜体声波谐振器及其制造方法
公开(公告)号：US20070013463A1
公开(公告)日：2007-01-18
申请号：US11395298
申请日：2006-04-03
申请人： Duck-hwan Kim , Chul-soo Kim , Yun-kwon Park , Sang-chul Sul , Byeoung-ju Ha , In-sang Song
发明人： Duck-hwan Kim , Chul-soo Kim , Yun-kwon Park , Sang-chul Sul , Byeoung-ju Ha , In-sang Song
IPC分类号： H03H9/54
CPC分类号： H03H9/172 , H03H3/02 , H03H9/02015 , H03H9/02118
摘要： A film bulk acoustic resonator includes a substrate; a lower electrode formed on top of the substrate; a piezoelectric membrane formed on top of the lower electrode and having a crystallographic axis so inclined as to generate a total reflection when an acoustic wave advances toward the lower electrode; and an upper electrode formed on top of the piezoelectric membrane.
摘要翻译：薄膜体声波谐振器包括基板; 形成在基板顶部的下电极; 形成在所述下电极的顶部并具有如此倾斜的结晶轴以在声波向下电极前进时产生全反射的压电膜; 以及形成在压电膜的顶部上的上电极。

10. 发明申请

US20070182509A1 Duplexer 有权
标题翻译：双工器
公开(公告)号：US20070182509A1
公开(公告)日：2007-08-09
申请号：US11648664
申请日：2007-01-03
申请人： Yun-kwon Park , Sang-chul Sul , In-sang Song , Chul-soo Kim , Seok-chul Yun , Kuang-woo Nam
发明人： Yun-kwon Park , Sang-chul Sul , In-sang Song , Chul-soo Kim , Seok-chul Yun , Kuang-woo Nam
IPC分类号： H03H9/70
CPC分类号： H03H9/706
摘要： A duplexer is provided. The duplexer includes a first band pass filter (BPF) coupled to a first signal port and a second signal port; and a second BPF coupled to the first signal port and a third signal port, each of the first BPF and the second BPF including a first resonance circuit which comprises a plurality of first resonators coupled in series; a second resonance circuit which comprises a plurality of second resonators coupled in series; and a third resonance circuit which comprises a plurality of third resonators coupled in parallel and formed in divided lines coupling the first and second resonance circuits.
摘要翻译：提供双工器。双工器包括耦合到第一信号端口和第二信号端口的第一带通滤波器（BPF）; 以及耦合到所述第一信号端口和第三信号端口的第二BPF，所述第一BPF和所述第二BPF中的每一个包括第一谐振电路，所述第一谐振电路包括串联耦合的多个第一谐振器; 第二谐振电路，包括串联耦合的多个第二谐振器; 以及第三谐振电路，其包括并联耦合的多个第三谐振器，并且以分开的线形成并联第一和第二谐振电路。

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