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1. 发明申请

US20100239982A1 Photoresist composition with high etching resistance 审中-公开
标题翻译：具有高抗蚀性的光刻胶组合物
公开(公告)号：US20100239982A1
公开(公告)日：2010-09-23
申请号：US12801146
申请日：2010-05-25
申请人： Sang-Jun Choi , Youn-Jin Cho , Seung-Wook Shin , Hye-Won Kim
发明人： Sang-Jun Choi , Youn-Jin Cho , Seung-Wook Shin , Hye-Won Kim
IPC分类号： G03F7/004
CPC分类号： G03F7/0397
摘要： A resist composition includes a first polymer including a repeating unit having the following Chemical Formula 1 and a repeating unit having the following Chemical Formula 2, a second polymer including a repeating unit having the following Chemical Formula 3, a repeating unit having the following Chemical Formula 4, and a repeating unit having the following Chemical Formula 5, a photoacid generator, and a solvent.
摘要翻译：抗蚀剂组合物包括包含具有以下化学式1的重复单元和具有以下化学式2的重复单元的第一聚合物，包含具有以下化学式3的重复单元的第二聚合物，具有以下化学式的重复单元 4和具有以下化学式5的重复单元，光酸产生剂和溶剂。

2. 发明申请

US20090155719A1 Aromatic (meth)acrylate compound having an alpha-hydroxy, photosensitive polymer, resist compositions, and associated methods 审中-公开
标题翻译：具有α-羟基，光敏聚合物，抗蚀剂组合物和相关方法的芳族（甲基）丙烯酸酯化合物
公开(公告)号：US20090155719A1
公开(公告)日：2009-06-18
申请号：US12314880
申请日：2008-12-18
申请人： Sang-Jun Choi , Youn-Jin Cho , Seung-Wook Shin , Hye-Won Kim
发明人： Sang-Jun Choi , Youn-Jin Cho , Seung-Wook Shin , Hye-Won Kim
IPC分类号： G03F7/004 , C07C69/54 , G03F7/20 , C08F24/00
CPC分类号： C07C69/54 , C07C2603/24 , G03F7/0397
摘要： An aromatic (meth)acrylate compound having an α-hydroxy, the aromatic (meth)acrylate compound being represented by the following Formula 1: In Formula 1, R1 is hydrogen or a methyl, R2 is hydrogen, a substituted or unsubstituted alkyl, or a substituted or unsubstituted aryl, AR is a substituted or unsubstituted phenyl ring, or a substituted or unsubstituted aryl having from two to three fused aromatic rings, and carbon CAR is bonded directly to an aromatic ring of AR, R and R′ are independently hydrogen or an alkyl, and X is an integer ranging from 1 to 6.
摘要翻译：具有α-羟基的芳族（甲基）丙烯酸酯化合物，芳族（甲基）丙烯酸酯化合物由下式1表示：在式1中，R 1是氢或甲基，R 2是氢，取代或未取代的烷基或取代或未取代的芳基，AR是取代或未取代的苯环，或具有2至3个稠合芳环的取代或未取代的芳基，碳CAR直接键合到AR的芳香环上，R和R'独立地是氢或烷基，X为1〜6的整数。

3. 发明授权

US07993810B2 (Meth)acrylate compound having aromatic acid labile group, photosensitive polymer, resist composition, and associated methods 有权
标题翻译：（甲基）丙烯酸酯化合物，光敏聚合物，抗蚀剂组合物和相关方法
公开(公告)号：US07993810B2
公开(公告)日：2011-08-09
申请号：US12314828
申请日：2008-12-17
申请人： Sang-Jun Choi , Youn-Jin Cho , Seung-Wook Shin , Hye-Won Kim
发明人： Sang-Jun Choi , Youn-Jin Cho , Seung-Wook Shin , Hye-Won Kim
IPC分类号： G03C7/30 , G03F7/039 , C08F20/18
CPC分类号： C07C69/54 , C07C2603/24 , C07C2603/26 , C07C2603/50 , G03F7/0392 , G03F7/0397
摘要： A (meth)acrylate compound having an aromatic acid-labile group, the (meth)acrylate compound being represented by the following Formula 1: In Formula I, R1 is hydrogen or methyl, R2 is hydrogen, a substituted or unsubstituted alkyl, or a substituted or unsubstituted aryl, R3 is hydrogen, a substituted or unsubstituted alkyl, or a substituted or unsubstituted aryl, AR is a substituted or unsubstituted phenyl, or a substituted or unsubstituted aryl having from two to four fused aromatic rings, and carbon CAR is bonded directly to an aromatic ring of AR.
摘要翻译：具有芳族酸不稳定基团的（甲基）丙烯酸酯化合物，（甲基）丙烯酸酯化合物由下式1表示：在式I中，R 1是氢或甲基，R 2是氢，取代或未取代的烷基或取代或未取代的芳基，R 3为氢，取代或未取代的烷基或取代或未取代的芳基，AR为取代或未取代的苯基，或具有2至4个稠合芳环的取代或未取代的芳基，碳CAR键合直接到AR的芳环。

4. 发明授权

US08017301B2 Photosensitive polymer, resist composition, and associated methods 有权
标题翻译：光敏聚合物，抗蚀剂组合物和相关方法
公开(公告)号：US08017301B2
公开(公告)日：2011-09-13
申请号：US12314888
申请日：2008-12-18
申请人： Sang-Jun Choi , Youn-Jin Cho , Seung-Wook Shin , Hye-Won Kim
发明人： Sang-Jun Choi , Youn-Jin Cho , Seung-Wook Shin , Hye-Won Kim
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , C08F24/00 , Y10S430/106 , Y10S430/111
摘要： A photosensitive polymer, the photosensitive polymer including repeating units represented by Formulae 1 to 3: wherein R1 and R3 are independently hydrogen or methyl, R2 is a C4 to C20 acid-labile group, R4 is a lactone-derived group, AR is a substituted or unsubstituted phenyl ring, or a substituted or unsubstituted aryl having from two to three fused aromatic rings, carbon CAR is bonded directly to an aromatic ring of AR, l, m, and n are positive integers, l/(l+m+n) is about 0.1 to about 0.5, m/(l+m+n) is about 0.3 to about 0.5, and n/(l+m+n) is about 0.1 to 0.4.
摘要翻译：光敏聚合物，其包含由式1至3表示的重复单元：其中R1和R3独立地为氢或甲基，R2为C4至C20酸不稳定基团，R4为内酯衍生基团，AR为取代基或未取代的苯环，或具有2至3个稠合芳环的取代或未取代的芳基，碳CAR直接键合到芳族环，AR，l，m和n均为正整数，l /（1 + m + n ）为约0.1至约0.5，m /（1 + m + n）为约0.3至约0.5，并且n /（1 + m + n）为约0.1至0.4。

5. 发明申请

US20100233620A1 Copolymer and photoresist composition including the same 审中-公开
标题翻译：包括其的共聚物和光致抗蚀剂组合物
公开(公告)号：US20100233620A1
公开(公告)日：2010-09-16
申请号：US12801145
申请日：2010-05-25
申请人： Sang-Jun Choi , Youn-Jin Cho , Seung-Wook Shin
发明人： Sang-Jun Choi , Youn-Jin Cho , Seung-Wook Shin
IPC分类号： G03F7/004 , C08F134/02
CPC分类号： G03F7/0397
摘要： A resist copolymer includes a repeating unit having the following Chemical Formula 1, a repeating unit having the following Chemical Formula 2, and a repeating unit having the following Chemical Formula 3:
摘要翻译：抗蚀剂共聚物包括具有以下化学式1的重复单元，具有以下化学式2的重复单元和具有以下化学式3的重复单元：

6. 发明申请

US20090170029A1 (Meth)acrylate compound having aromatic acid labile group, photosensitive polymer, resist composition, and associated methods 有权
标题翻译：（甲基）丙烯酸酯化合物，光敏聚合物，抗蚀剂组合物和相关方法
公开(公告)号：US20090170029A1
公开(公告)日：2009-07-02
申请号：US12314828
申请日：2008-12-17
申请人： Sang-Jun Choi , Youn-Jin Cho , Seung-Wook Shin , Hye-Won Kim
发明人： Sang-Jun Choi , Youn-Jin Cho , Seung-Wook Shin , Hye-Won Kim
IPC分类号： G03F7/20 , C07C69/52 , C08F20/10 , C08F24/00 , G03F7/004
CPC分类号： C07C69/54 , C07C2603/24 , C07C2603/26 , C07C2603/50 , G03F7/0392 , G03F7/0397
摘要： A (meth)acrylate compound having an aromatic acid-labile group, the (meth)acrylate compound being represented by the following Formula 1: In Formula 1, R1 is hydrogen or methyl, R2 is hydrogen, a substituted or unsubstituted alkyl, or a substituted or unsubstituted aryl, R3 is hydrogen, a substituted or unsubstituted alkyl, or a substituted or unsubstituted aryl, AR is a substituted or unsubstituted phenyl, or a substituted or unsubstituted aryl having from two to four fused aromatic rings, and carbon CAR is bonded directly to an aromatic ring of AR.
摘要翻译：具有芳族酸不稳定基团的（甲基）丙烯酸酯化合物，（甲基）丙烯酸酯化合物由下式1表示：在式1中，R 1是氢或甲基，R 2是氢，取代或未取代的烷基或取代或未取代的芳基，R 3为氢，取代或未取代的烷基或取代或未取代的芳基，AR为取代或未取代的苯基，或具有2至4个稠合芳环的取代或未取代的芳基，碳CAR键合直接到AR的芳环。

7. 发明申请

US20090155720A1 Photosensitive polymer, resist composition, and associated methods 有权
标题翻译：光敏聚合物，抗蚀剂组合物和相关方法
公开(公告)号：US20090155720A1
公开(公告)日：2009-06-18
申请号：US12314888
申请日：2008-12-18
申请人： Sang-Jun Choi , Youn-Jin Cho , Seung-Wook Shin , Hye-Won Kim
发明人： Sang-Jun Choi , Youn-Jin Cho , Seung-Wook Shin , Hye-Won Kim
IPC分类号： G03F7/004 , C08F24/00 , G03F7/20
CPC分类号： G03F7/0397 , C08F24/00 , Y10S430/106 , Y10S430/111
摘要： A photosensitive polymer, the photosensitive polymer including repeating units represented by Formulae 1 to 3: wherein R1 and R3 are independently hydrogen or methyl, R2 is a C4 to C20 acid-labile group, R4 is a lactone-derived group, AR is a substituted or unsubstituted phenyl ring, or a substituted or unsubstituted aryl having from two to three fused aromatic rings, carbon CAR is bonded directly to an aromatic ring of AR, l, m, and n are positive integers, 1/(l+m+n) is about 0.1 to about 0.5, m/(l+m+n) is about 0.3 to about 0.5, and n/(l+m+n) is about 0.1 to 0.4.
摘要翻译：光敏聚合物，其包含由式1至3表示的重复单元：其中R1和R3独立地为氢或甲基，R2为C4至C20酸不稳定基团，R4为内酯衍生基团，AR为取代基或未取代的苯环，或具有2至3个稠合芳环的取代或未取代的芳基，碳CAR直接键合到芳族环，AR，l，m和n均为正整数，1 /（1 + m + n ）为约0.1至约0.5，m /（1 + m + n）为约0.3至约0.5，并且n /（1 + m + n）为约0.1至0.4。

8. 发明授权

US09023582B2 Photosensitive polymer, resist composition including the photosensitive polymer and method of preparing resist pattern using the resist composition 有权
标题翻译：光敏聚合物，包含光敏聚合物的抗蚀剂组合物和使用抗蚀剂组合物制备抗蚀剂图案的方法
公开(公告)号：US09023582B2
公开(公告)日：2015-05-05
申请号：US13795268
申请日：2013-03-12
申请人： Sang-Jun Choi
发明人： Sang-Jun Choi
IPC分类号： G03F7/20 , C08G63/66 , G03F7/004 , G03F7/039
CPC分类号： C08G63/66 , C08G63/16 , C08G63/672 , G03F7/0045 , G03F7/039 , G03F7/0395 , Y10S430/114 , Y10S430/128
摘要： A photosensitive polymer includes a repeating unit represented by Formula 1 and the photosensitive polymer has a weight average molecule weight of from about 3,000 to about 50,000:
摘要翻译：光敏聚合物包括由式1表示的重复单元，光敏聚合物的重均分子量为约3,000至约50,000：

9. 发明授权

US08637942B2 Transistor having a metal nitride layer pattern, etchant and methods of forming the same 有权
标题翻译：具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法
公开(公告)号：US08637942B2
公开(公告)日：2014-01-28
申请号：US12461992
申请日：2009-08-31
申请人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
发明人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L29/78
CPC分类号： H01L21/32134 , C09K13/02 , H01L21/28088 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.
摘要翻译：提供具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法。可以在半导体衬底上形成栅极绝缘层和/或金属氮化物层。掩模层可以形成在金属氮化物层上。使用掩模层作为蚀刻掩模，可以对金属氮化物层进行蚀刻处理，形成金属氮化物层图案。可以具有氧化剂，螯合剂和/或pH调节混合物的蚀刻剂可以进行蚀刻。在形成晶体管期间，这些方法可以减少金属氮化物层图案下的栅极绝缘层的蚀刻损伤。

10. 发明申请

US20120077301A1 IMAGE SENSOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：图像传感器及其制作方法
公开(公告)号：US20120077301A1
公开(公告)日：2012-03-29
申请号：US13239457
申请日：2011-09-22
申请人： Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
发明人： Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
IPC分类号： H01L31/18
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/1463
摘要： An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.
摘要翻译：提供了一种用于制造图像传感器的图像传感器和方法。制造图像传感器的方法包括在具有多个像素区域的半导体外延层上形成第一绝缘层; 在像素区域之间的边界区域中构图半导体外延层和第一绝缘层的一部分以形成沟槽; 在所述第一绝缘层上形成掩埋绝缘层，填充所述沟槽，所述掩埋绝缘层具有平坦的顶表面; 在所述掩埋绝缘层上形成第二绝缘层; 在所述第二绝缘层上形成第一掩模图案，所述第一掩模图案限定与所述沟槽重叠的开口; 以及使用所述第一掩模图案作为离子注入掩模进行离子注入处理，以在所述沟槽的底部形成第一类型的势垒区域。

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