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1. 发明申请

US20120319083A1 NANOROD SEMICONDUCTOR DEVICE HAVING A CONTACT STRUCTURE, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：具有接触结构的纳米二极半导体器件及其制造方法
公开(公告)号：US20120319083A1
公开(公告)日：2012-12-20
申请号：US13518238
申请日：2010-12-21
申请人： Sang Wuk Lee , Tae Won Kang , Gennady Panin , Hak Dong Cho
发明人： Sang Wuk Lee , Tae Won Kang , Gennady Panin , Hak Dong Cho
IPC分类号： H01L29/38 , H01L21/205 , H01L21/208 , H01L21/203
CPC分类号： H01L21/02422 , B82Y40/00 , H01L21/02491 , H01L21/0254 , H01L21/02554 , H01L21/02557 , H01L21/02576 , H01L21/02603 , H01L29/0665 , H01L33/08 , H01L33/38
摘要： Disclosed is a nanorod semiconductor device having a contact structure, and a method for manufacturing the same. The nanorod semiconductor device having a contact structure according to one embodiment of the present disclosure includes: a transparent wafer; a transparent electrode layer formed on the transparent wafer; a nanorod layer including a plurality of semiconductor nanorods doped with dopants having a first polarity and grown on the transparent electrode layer; and a single crystal semiconductor layer doped with dopants having a second polarity and forming a certain physical contact with the ends of the semiconductor nanorods.
摘要翻译：公开了具有接触结构的纳米棒半导体器件及其制造方法。具有根据本公开的一个实施例的接触结构的纳米棒半导体器件包括：透明晶片; 形成在透明晶片上的透明电极层; 纳米棒层，其包括掺杂有第一极性并在所述透明电极层上生长的掺杂剂的多个半导体纳米棒; 以及掺杂有具有第二极性并且与半导体纳米棒的端部形成一定物理接触的掺杂剂的单晶半导体层。

2. 发明申请

US20120314726A1 LASER DIODE USING ZINC OXIDE NANORODS AND MANUFACTURING METHOD THEREOF 有权
标题翻译：使用氧化锌纳米粒子的激光二极管及其制造方法
公开(公告)号：US20120314726A1
公开(公告)日：2012-12-13
申请号：US13518440
申请日：2010-09-10
申请人： Sang Wuk Lee , Tae Won Kang , Gennady Panin , Hak Dong Cho
发明人： Sang Wuk Lee , Tae Won Kang , Gennady Panin , Hak Dong Cho
IPC分类号： H01S5/32 , H01L33/26 , B82Y40/00 , B82Y20/00
CPC分类号： H01S5/327 , B82Y20/00 , H01S5/021 , H01S5/0425 , H01S5/341
摘要： Provided are a laser diode using zinc oxide nanorods and a manufacturing method thereof. The laser diode using zinc oxide nanorods according to one embodiment of the present disclosure includes: a wafer; an electrode layer formed on the wafer; a nanorod layer including a plurality of n-doped zinc oxide nanorods grown on the electrode layer; and a p-doped single crystal semiconductor layer that is physically in contact with the ends of the zinc oxide nanorods.
摘要翻译：提供了使用氧化锌纳米棒的激光二极管及其制造方法。根据本公开的一个实施例的使用氧化锌纳米棒的激光二极管包括：晶片; 形成在晶片上的电极层; 包括在所述电极层上生长的多个n掺杂的氧化锌纳米棒的纳米棒层; 以及物理地与氧化锌纳米棒的端部接触的p掺杂单晶半导体层。

3. 发明授权

US08787416B2 Laser diode using zinc oxide nanorods and manufacturing method thereof 有权
标题翻译：使用氧化锌纳米棒的激光二极管及其制造方法
公开(公告)号：US08787416B2
公开(公告)日：2014-07-22
申请号：US13518440
申请日：2010-09-10
申请人： Sang Wuk Lee , Tae Won Kang , Gennady Panin , Hak Dong Cho
发明人： Sang Wuk Lee , Tae Won Kang , Gennady Panin , Hak Dong Cho
IPC分类号： H01S3/14 , H01S5/00
CPC分类号： H01S5/327 , B82Y20/00 , H01S5/021 , H01S5/0425 , H01S5/341
摘要： Provided are a laser diode using zinc oxide nanorods and a manufacturing method thereof. The laser diode using zinc oxide nanorods according to one embodiment of the present disclosure includes: a wafer; an electrode layer formed on the wafer; a nanorod layer including a plurality of n-doped zinc oxide nanorods grown on the electrode layer; and a p-doped single crystal semiconductor layer that is physically in contact with the ends of the zinc oxide nanorods.
摘要翻译：提供了使用氧化锌纳米棒的激光二极管及其制造方法。根据本公开的一个实施例的使用氧化锌纳米棒的激光二极管包括：晶片; 形成在晶片上的电极层; 包括在所述电极层上生长的多个n掺杂的氧化锌纳米棒的纳米棒层; 以及物理地与氧化锌纳米棒的端部接触的p掺杂单晶半导体层。

4. 发明申请

US20120205606A1 Nonvolatile Memory Device Using The Resistive Switching of Graphene Oxide And The Fabrication Method Thereof 审中-公开
标题翻译：使用石墨烯氧化物的电阻式开关的非易失性存储器件及其制造方法
公开(公告)号：US20120205606A1
公开(公告)日：2012-08-16
申请号：US13280818
申请日：2011-10-25
申请人： Sang Wuk Lee , Tae Won Kang , Gennady Panin , Olesya Kapitanova
发明人： Sang Wuk Lee , Tae Won Kang , Gennady Panin , Olesya Kapitanova
IPC分类号： H01L45/00 , H01L21/8239 , B82Y99/00
CPC分类号： H01L45/04 , H01L27/1052 , H01L45/149
摘要： Disclosed are an oxide-based nonvolatile memory with superior resistive switching characteristics and a method for preparing the same. More particularly, the disclosure relates to a nonvolatile memory device having a metal/reduced graphene oxide (r-GO) thin film/metal structure and a method for preparing the same.
摘要翻译：公开了具有优异的电阻开关特性的基于氧化物的非易失性存储器及其制备方法。更具体地说，本公开涉及具有金属/还原型氧化石墨烯（r-GO）薄膜/金属结构的非易失性存储器件及其制备方法。

5. 外观设计

USD723039S1 Case for portable tablet PC 有权
标题翻译：便携式平板电脑的案例
公开(公告)号：USD723039S1
公开(公告)日：2015-02-24
申请号：US29476235
申请日：2013-12-12
申请人： Tae Won Kang , Yun Sang Nam
设计人： Tae Won Kang , Yun Sang Nam

6. 发明授权

US06792376B2 Apparatus and method for testing socket 失效
标题翻译：插座测试装置及方法
公开(公告)号：US06792376B2
公开(公告)日：2004-09-14
申请号：US10353217
申请日：2003-01-27
申请人： Ill Young Lee , Dong Myun Byon , Tae Won Kang , Sei Woong Kim
发明人： Ill Young Lee , Dong Myun Byon , Tae Won Kang , Sei Woong Kim
IPC分类号： G01R3100
CPC分类号： G01R31/2808 , G01R35/005
摘要： An apparatus and a method for testing a socket are disclosed. The resistance values of the contactor pins of the socket can be precisely measured, and the measurement is made automatic so as to decrease the expense and manpower. The method includes the following steps. That is, a calibration PCB is formed into a closed circuit, and all the resistance values forming a closed circuit loop for respective channels are extracted and stored (first step). A socket-installed PCB is formed into a closed circuit, and all resistance values forming a closed circuit loop for respective channels are extracted and stored (second step). Differences between the resistance values of the respective channels of the calibration PCB and the resistance values of the respective channels of the socket-installed PCB are calculated (third step). The differences thus calculated are displayed to a screen for the respective channels (fourth step).
摘要翻译：公开了一种用于测试插座的装置和方法。可以精确测量插座的接触器销的电阻值，自动进行测量，以降低成本和人力。该方法包括以下步骤。也就是说，校准PCB被形成为闭合电路，并且提取并存储形成用于各个通道的闭路回路的所有电阻值（第一步）。将插座安装的PCB形成为闭合电路，并且提取并存储形成用于相应通道的闭路回路的所有电阻值（第二步骤）。计算校准PCB的各个通道的电阻值与插座安装的PCB的各个通道的电阻值之间的差异（第三步）。将如此计算的差异显示给相应通道的屏幕（第四步骤）。

7. 发明授权

US06833461B2 Process for preparing simvastatin 失效
标题翻译：辛伐他汀的制备方法
公开(公告)号：US06833461B2
公开(公告)日：2004-12-21
申请号：US10468852
申请日：2003-08-25
申请人： Chung Il Hong , Jung Woo Kim , Hee Jong Shin , Tae Won Kang , Dong Ock Cho
发明人： Chung Il Hong , Jung Woo Kim , Hee Jong Shin , Tae Won Kang , Dong Ock Cho
IPC分类号： C07D30930
CPC分类号： C07D309/30 , Y02P20/55
摘要： The present invention relates to an improved process for preparing simvastatin and more particularly, the improved process for preparing simvastatin expressed by formula 1 with high yield and high purity by performing the following sequential processes comprising: (i) hydrolysis of lovastatin as starting material with potassium t-butoxide in an organic solvent and small amount of water under a mild reaction condition, followed by lactonization of the obtained solid intermediate with preventing from formation of by-products; (ii) protection of an alcohol group with t-butyldimethylsilyl group which can be easily removed with concentrated hydrochloric acid without the formation of by-products; (iii) acylation of the obtained protected intermediate with acyloxytriphenyl phosphonium salt as an acylating agent under a mild reaction condition; and (iv) removal of the silyl protective group with a concentrated hydrochloric acid. The present invention is to provide the improved process of preparing simvastatin expressed by formula 1 environmentally sound, economically efficient, and industrially useful.
摘要翻译：本发明涉及一种制备辛伐他汀的改进方法，更具体地说，涉及通过进行以下顺序方法制备具有高产率和高纯度的式1所表达的辛伐他汀的改进方法，包括：（i）将洛伐他汀作为原料与钾叔丁醇在有机溶剂和少量水中，在温和的反应条件下，然后将所得固体中间体内酯化，防止副产物的形成; （ii）用叔丁基二甲基甲硅烷基保护醇基，其可以用浓盐酸容易地除去而不形成副产物; （iii）在温和的反应条件下用酰氧基三苯基鏻盐作为酰化剂酰化所得保护的中间体; 和（iv）用浓盐酸除去甲硅烷基保护基。本发明提供了由式1表达的辛伐他汀的改进方法，其在环境无害，经济有效和工业上有用。

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