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1. 发明授权

US08446763B2 Semiconductor memory device, method of manufacturing the same, and cell array of semiconductor memory device 有权
标题翻译：半导体存储器件及其制造方法以及半导体存储器件的单元阵列
公开(公告)号：US08446763B2
公开(公告)日：2013-05-21
申请号：US12980541
申请日：2010-12-29
申请人： Sang Woo Nam
发明人： Sang Woo Nam
IPC分类号： G11C16/04
CPC分类号： H01L29/7883 , G11C16/0425 , G11C16/0483 , H01L27/11519 , H01L27/11521 , H01L29/513 , H01L29/7885
摘要： A semiconductor memory device, a method of manufacturing the same, and a cell array of a semiconductor memory device are provided. The semiconductor memory device includes: a first gate insulation layer and a second gate insulation layer, being spaced a predetermined distance from each other, on a portion of a semiconductor substrate; a select gate on the first gate insulation layer; a floating gate on the second gate insulation layer; a third gate insulation layer on the floating gate; a control gate on the third gate insulation layer; a first ion implantation region in the semiconductor substrate between the select gate and the floating gate; a second ion implantation region in the semiconductor substrate at a side of the select gate opposite the first ion implantation region; and a third ion implantation region in the semiconductor substrate at a side of the floating gate opposite the first ion implantation region.
摘要翻译：提供半导体存储器件，其制造方法和半导体存储器件的单元阵列。半导体存储器件包括：在半导体衬底的一部分上彼此隔开预定距离的第一栅极绝缘层和第二栅极绝缘层; 第一栅极绝缘层上的选择栅极; 第二栅绝缘层上的浮栅; 浮栅上的第三栅极绝缘层; 第三栅极绝缘层上的控制栅极; 在所述选择栅极和所述浮置栅极之间的所述半导体衬底中的第一离子注入区域; 在所述选择栅极的与所述第一离子注入区域相对的一侧的所述半导体衬底中的第二离子注入区域; 以及在所述半导体衬底中在所述浮置栅极的与所述第一离子注入区域相对的一侧的第三离子注入区域。

2. 发明授权

US07355243B2 Flash memory device and method for fabricating the same 失效
标题翻译：闪存装置及其制造方法
公开(公告)号：US07355243B2
公开(公告)日：2008-04-08
申请号：US11320862
申请日：2005-12-30
申请人： Sang Woo Nam
发明人： Sang Woo Nam
IPC分类号： H01L29/788
CPC分类号： H01L27/11519 , H01L27/115 , H01L27/11521
摘要： A flash memory device including an isolation layer for defining active regions in a semiconductor substrate. The active region is a region in which flash memory cells are to be formed. The device also includes a gate stack is formed to come across the active region and the isolation layer, and a sidewall spacer is formed at sidewalls of the gate stack. The device further includes a common source line that electrically interconnects a plurality of sources of a plurality of the flash memory cells, and is formed in the isolation layer by removing an insulating material in the isolation layer and is formed in parallel to a word line formed over the gate stack. A silicide layer is formed in the common source line.
摘要翻译：一种闪存器件，包括用于限定半导体衬底中的有源区的隔离层。有源区是要形成闪存单元的区域。该器件还包括形成栅极叠层以跨过有源区和隔离层，并且在栅堆叠的侧壁处形成侧壁间隔物。该装置还包括一个公共源极线，其将多个闪存单元的多个源电气互连，并且通过去除隔离层中的绝缘材料而形成在隔离层中，并且与形成的字线平行地形成通过门栈。在公共源极线上形成硅化物层。

3. 发明授权

US09240733B2 High dynamic control apparatus for current source converter 有权
标题翻译：用于电流源转换器的高动态控制装置
公开(公告)号：US09240733B2
公开(公告)日：2016-01-19
申请号：US14042756
申请日：2013-10-01
申请人： Semyon Royak , Manish Pande , Jingya Dai , Sang Woo Nam , Ehshan Al-Nabi
发明人： Semyon Royak , Manish Pande , Jingya Dai , Sang Woo Nam , Ehshan Al-Nabi
IPC分类号： H02P6/14 , H02P3/00 , H02P3/14 , H02P3/22 , H02M5/458 , H02M7/162 , H02P21/00 , H02P21/06
CPC分类号： H02M5/4585 , H02M7/1626 , H02P21/06 , H02P21/22
摘要： Current source converters and control methods are presented for high dynamic performance by implementing a DC link current control loop parallel to one or more motor control loops, with a DC link current control command value for operating the current source rectifier being derived at least partially independent of the motor control command values, wherein certain implementations drive the current source rectifier to its maximum rated value, or the DC current command value can be set above an amount required by the current source inverter using a gain factor which can be fixed or can itself be adjusted based on one or more motor control error values for balancing as-needed dynamic performance and efficiency.
摘要翻译：通过实现与一个或多个电动机控制环路并联的DC链路电流控制回路来呈现电流源转换器和控制方法以实现高动态性能，其中DC链路电流控制命令值用于操作电流源整流器至少部分地独立于电动机控制指令值，其中某些实施方式将电流源整流器驱动到其最大额定值，或者DC电流指令值可以被设置为高于电流源逆变器所需的量，该增益因子可以是固定的或本身可以是根据一个或多个电机控制误差值进行调整，以平衡所需的动态性能和效率。

4. 发明授权

US08400085B2 Dynamic braking for current source converter based drive 有权
标题翻译：基于电流源转换器的动态制动
公开(公告)号：US08400085B2
公开(公告)日：2013-03-19
申请号：US12711625
申请日：2010-02-24
申请人： Ghodratollah Esmaeili Rineh , Sang Woo Nam , Manish Pande , Zhongyuan Cheng
发明人： Ghodratollah Esmaeili Rineh , Sang Woo Nam , Manish Pande , Zhongyuan Cheng
IPC分类号： H02P3/22
CPC分类号： H02P3/18 , B60L7/06 , B60L9/28 , B60L2210/30 , B60L2210/44 , B60L2240/421 , B60L2240/423 , B60L2240/527 , B60L2240/529 , H02P27/08 , Y02T10/642 , Y02T10/7241
摘要： Current source converter (CSC) based motor drives and control techniques are presented in which DC link current is regulated to a level set by the output inverter during dynamic braking operation by pulse width modulation of a braking resistance connection signal to maintain control of motor torque and speed while mitigating or preventing line side regenerative currents.
摘要翻译：提出了基于电流源转换器（CSC）的电机驱动和控制技术，其中直流链路电流通过制动电阻连接信号的脉宽调制在动态制动操作期间被调节到输出逆变器设置的电平，以维持电动机转矩的控制，同时减轻或防止线路侧再生电流。

5. 发明授权

US08381927B2 Container 有权
标题翻译：容器
公开(公告)号：US08381927B2
公开(公告)日：2013-02-26
申请号：US13044780
申请日：2011-03-10
申请人： Sang Woo Nam
发明人： Sang Woo Nam
IPC分类号： B65D88/00 , E05F1/10
CPC分类号： B65D90/008 , Y10T16/568
摘要： A container is provided, which includes a container main body having a loading space formed therein to load freight therein; a door opening/closing a freight doorway formed on one side of the container main body and including a first door of which one side is hinge-engaged with the container main body by a first hinge portion, and a second door of which one side is hinge-engaged with the other side of the first door by a second hinge portion; a slide rotation portion including a slide rail provided on the container main body, a movement member connected to the second door to slidably move along the slide rail, a link member connected to the movement member and an inner side surface of the second door to make the door rotate at 0 to 270 degrees around the first hinge portion, and a movement limit member connected between the movement member and one side of the link member to limit the movement of the link member; and a locking portion locking/unlocking the door with respect to the container main body. The capturing of freight can be originally prevented by a finished product itself without any separate locking device, and the merchantability and convenience in use can be improved through limiting of movement of a link member using the movement limit member to prevent the rattling of doors.
摘要翻译：提供容器，其包括容器主体，其具有形成在其中的装载空间以在其中运送货物; 一个开闭货柜门的门，形成在容器主体的一侧上，并且包括第一门，其一侧通过第一铰链部与容器主体铰接，第二门是一侧通过第二铰链部分与第一门的另一侧铰接; 滑动旋转部分，包括设置在容器主体上的滑轨;连接到第二门的移动构件，可滑动地沿着滑轨移动，连接到运动件的连杆构件和第二门的内侧表面，所述门围绕所述第一铰链部分以0至270度旋转;以及移动限制构件，其连接在所述移动构件与所述连杆构件的一侧之间，以限制所述连杆构件的移动; 以及锁定部，其相对于所述容器主体锁定/解锁所述门。货物的捕获本来可以避免成品本身而没有任何单独的锁定装置，并且可以通过限制使用移动限制件的连杆件的运动来改善使用的适销性和便利性，以防止门的晃动。

6. 发明授权

US07720487B2 Handover method and apparatus for mobile terminal using location information in heterogeneous system network 有权
标题翻译：移动终端在异构系统网络中使用位置信息的切换方法和装置
公开(公告)号：US07720487B2
公开(公告)日：2010-05-18
申请号：US11295126
申请日：2005-12-05
申请人： Won Ik Kim , Bong Ju Lee , Pyeong Jung Song , Sang Woo Nam , Jae Su Song , Yeon Seung Shin
发明人： Won Ik Kim , Bong Ju Lee , Pyeong Jung Song , Sang Woo Nam , Jae Su Song , Yeon Seung Shin
IPC分类号： H04L12/66
CPC分类号： H04W36/14 , H04W36/32 , H04W48/18
摘要： A handover method and apparatus for a mobile terminal using location information in a network of heterogeneous systems are provided. The handover method uses service area map information provided by a location service server in a mobile communication network in which at least one or more heterogeneous wireless network systems are connected through a predetermined network and, includes: receiving service area map information transmitted from the location service server; the mobile terminal determining whether or not the location of the mobile terminal is within the service area map; and if it is determined that the mobile terminal is within the service area map, the wireless terminal selecting an accessible wireless network system and then activating a unit for communicating with a base station of the selected wireless network system. According to the method, a battery consumption problem that occurs by activating all modems when a wireless terminal, which is connected to a predetermined mobile communication system in an environment where a plurality of heterogeneous systems are overlapping each other, is searching for candidate systems in order to perform handover to a heterogeneous network, can be solved. Also, a problem where finding a candidate system is time-consuming can be solved.
摘要翻译：提供了一种在异构系统的网络中使用位置信息的移动终端的切换方法和装置。切换方法使用由移动通信网络中的位置服务服务器提供的服务区域地图信息，其中至少一个或多个异构无线网络系统通过预定网络连接，并且包括：从位置服务发送的服务区域地图信息服务器; 移动终端确定移动终端的位置是否在服务区域图内; 并且如果确定所述移动终端在所述服务区域映射内，则所述无线终端选择可访问无线网络系统，然后激活用于与所选择的无线网络系统的基站进行通信的单元。根据该方法，当在多个异构系统彼此重叠的环境中连接到预定移动通信系统的无线终端时，通过激活所有调制解调器而发生的电池消耗问题正在按顺序搜索候选系统可以解决异构网络的切换。此外，可以解决发现候选系统耗时的问题。

7. 发明申请

US20070020878A1 Method for fabricating a metal-insulator-metal capacitor 失效
标题翻译：金属绝缘体金属电容器的制造方法
公开(公告)号：US20070020878A1
公开(公告)日：2007-01-25
申请号：US11319411
申请日：2005-12-29
申请人： Sang Woo Nam
发明人： Sang Woo Nam
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： A method for forming a shallow trench isolation (STI) in a semiconductor device, is presented. In one embodiment, the method includes successively forming a pad oxide and a pad nitride on a silicon substrate, successively etching the pad nitride, the pad oxide, and the silicon substrate to form a trench having a predetermined depth in the silicon substrate, and depositing a trench filling oxide to fill the trench. The method further includes polishing the trench filling oxide until the pad nitride is exposed, depositing a protective nitride to cover surface of the substrate including the pad nitride and the trench filling oxide, and isotropically etching the protective nitride and the pad nitride to form spacers.
摘要翻译：提出了一种在半导体器件中形成浅沟槽隔离（STI）的方法。在一个实施例中，该方法包括在硅衬底上连续地形成衬垫氧化物和衬垫氮化物，依次蚀刻衬垫氮化物，衬垫氧化物和硅衬底，以在硅衬底中形成具有预定深度的沟槽，以及沉积沟槽填充氧化物填充沟槽。该方法还包括抛光沟槽填充氧化物，直到衬垫氮化物暴露，沉积保护氮化物以覆盖包括衬垫氮化物和沟槽填充氧化物的衬底的表面，以及各向同性蚀刻保护氮化物和衬垫氮化物以形成间隔物。

8. 发明申请

US20110057588A1 DYNAMIC BRAKING FOR CURRENT SOURCE CONVERTER BASED DRIVE 有权
标题翻译：基于电流转换器驱动的动态制动
公开(公告)号：US20110057588A1
公开(公告)日：2011-03-10
申请号：US12711625
申请日：2010-02-24
申请人： Ghodratollah Esmaeili Rineh , Sang Woo Nam , Manish Pande , Zhongyuan Cheng
发明人： Ghodratollah Esmaeili Rineh , Sang Woo Nam , Manish Pande , Zhongyuan Cheng
IPC分类号： H02P3/22
CPC分类号： H02P3/18 , B60L7/06 , B60L9/28 , B60L2210/30 , B60L2210/44 , B60L2240/421 , B60L2240/423 , B60L2240/527 , B60L2240/529 , H02P27/08 , Y02T10/642 , Y02T10/7241
摘要： Current source converter (CSC) based motor drives and control techniques are presented in which DC link current is regulated to a level set by the output inverter during dynamic braking operation by pulse width modulation of a braking resistance connection signal to maintain control of motor torque and speed while mitigating or preventing line side regenerative currents.
摘要翻译：提出了基于电流源转换器（CSC）的电机驱动和控制技术，其中直流链路电流通过制动电阻连接信号的脉宽调制在动态制动操作期间被调节到输出逆变器设置的电平，以维持电动机转矩的控制，同时减轻或防止线路侧再生电流。

9. 发明授权

US07569481B2 Method for forming via-hole in semiconductor device 失效
标题翻译：在半导体器件中形成通孔的方法
公开(公告)号：US07569481B2
公开(公告)日：2009-08-04
申请号：US11445773
申请日：2006-05-30
申请人： Sang Woo Nam
发明人： Sang Woo Nam
IPC分类号： H01L21/4763
CPC分类号： H01L21/76804 , H01L21/02063 , H01L21/31116
摘要： Disclosed is a method for forming a via-hole for interconnection of metallization and/or metal wires in a semiconductor device. The present method may include the steps of: (a) forming an insulating layer on a semiconductor substrate including a lower metallization and/or metal wiring; (b) forming a mask (e.g., a photo-resist pattern) on the insulating layer; (c) dry etching the insulating layer using the photo-resist pattern as a mask to form a via-hole in the insulating layer; and (d) in the same dry etching chamber, etching a top portion of the insulating layer in the vicinity of the via-hole with an etchant comprising oxygen and argon.
摘要翻译：公开了一种用于在半导体器件中形成用于金属化和/或金属线的互连的通孔的方法。本方法可以包括以下步骤：（a）在包括下金属化和/或金属布线的半导体衬底上形成绝缘层; （b）在绝缘层上形成掩模（例如光致抗蚀剂图案）; （c）使用光刻胶图案作为掩模对绝缘层进行干蚀刻，以在绝缘层中形成通孔; 和（d）在相同的干蚀刻室中，用包含氧和氩的蚀刻剂蚀刻在通孔附近的绝缘层的顶部。

10. 发明授权

US07465629B2 Flash memory and method for manufacturing the same 有权
标题翻译：闪存及其制造方法
公开(公告)号：US07465629B2
公开(公告)日：2008-12-16
申请号：US11595522
申请日：2006-11-09
申请人： Sang Woo Nam
发明人： Sang Woo Nam
IPC分类号： H01L21/8247
CPC分类号： H01L29/7881 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/42324
摘要： Provided are a flash memory and a method for manufacturing the same. The flash memory includes a semiconductor substrate having a device isolation region and an active region; a stacked gate on the semiconductor substrate; an insulation layer covering the semiconductor substrate and the stacked gate; a drain contact penetrating the insulation layer on one side of the stacked gate; and a source line penetrating the insulation layer on an opposite side of the stacked gate.
摘要翻译：提供一种闪速存储器及其制造方法。闪存包括具有器件隔离区域和有源区域的半导体衬底; 半导体衬底上的堆叠栅极; 覆盖半导体衬底和层叠栅极的绝缘层; 穿过层叠栅极一侧的绝缘层的漏极接触; 以及穿过层叠栅极的相对侧上的绝缘层的源极线。

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