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    • 9. 发明授权
    • Nitride semiconductor light emitting device and method of manufacturing the same
    • 氮化物半导体发光器件及其制造方法
    • US08030640B2
    • 2011-10-04
    • US12618164
    • 2009-11-13
    • Jeong Tak OhYong Chun KimDong Joon KimDong Ju Lee
    • Jeong Tak OhYong Chun KimDong Joon KimDong Ju Lee
    • H01L33/00H01L21/30
    • H01L33/18H01L33/20H01L33/32
    • A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.
    • 氮化物半导体发光器件包括衬底,设置在衬底上的第一导电型氮化物半导体层,并且包括放置在其顶表面中的多个V凹坑,形成在每个V形衬底的顶点区域中的硅化合物, 凹坑,设置在第一导电型氮化物半导体层上并包括符合多个V凹坑形状的凹陷的有源层和设置在有源层上的第二导电型氮化物半导体层。 氮化物半导体发光器件在接收到静电时实现了高静电放电(ESD)的抗性,因为电流集中在V型凹坑中,并且硅化合物置于由晶格缺陷引起的位错上。