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    • 3. 发明申请
    • Electrostatic Chuck And Chuck Base Having Cooling Path For Cooling Wafer
    • 静电夹头和卡盘底座具有用于冷却晶片的冷却路径
    • US20070274020A1
    • 2007-11-29
    • US10583978
    • 2004-12-22
    • Hee ParkJin KimKyu LeeKwan ParkSang OhHwi Jang
    • Hee ParkJin KimKyu LeeKwan ParkSang OhHwi Jang
    • H01L21/3065
    • H01L21/67109H01L21/6831
    • The electrostatic chuck comprises a chuck base for supporting a wafer, a dielectric film mounted on the chuck base, the dielectric film having an electrode for supplying direct current voltage to provide an electrostatic force to fix the wafer, the electrode disposed in the dielectric film, and a cooling channel for supplying refrigerant to the dielectric film to control the temperature of the wafer. At least two first cooling channel parts are formed at the surface of the dielectric film corresponding to the edge part of the wafer such that the first cooling channel parts form concentric circles, second cooling channel parts formed at the surface of the dielectric film such that the first cooling channel parts are connected to each other through the second cooling channel parts, first through channels formed through the dielectric film for supplying the refrigerant to the first and second cooling channel parts, and a second through channel formed through the center of the dielectric film for supplying the refrigerant to the center of the wafer.
    • 静电卡盘包括用于支撑晶片的卡盘基座,安装在卡盘基座上的电介质膜,该电介质膜具有用于提供直流电压以提供固定晶片的静电力的电极,设置在电介质膜中的电极, 以及用于向电介质膜供给制冷剂以控制晶片的温度的冷却通道。 至少两个第一冷却通道部分形成在对应于晶片的边缘部分的电介质膜的表面上,使得第一冷却通道部分形成同心圆,形成在电介质膜的表面处的第二冷却通道部分使得 第一冷却通道部分通过第二冷却通道部分相互连接,首先通过用于将制冷剂供应到第一和第二冷却通道部分的介电膜形成的通道,以及通过介电膜中心形成的第二通道 用于将制冷剂供应到晶片的中心。
    • 8. 发明申请
    • Method And Apparatus For Seasoning Semiconductor Apparatus Of Sensing Plasma Equipment
    • 感应等离子体设备调味半导体装置的方法和装置
    • US20070201016A1
    • 2007-08-30
    • US10584108
    • 2004-12-21
    • Yeong SongSang OhSheung KimNam Kim
    • Yeong SongSang OhSheung KimNam Kim
    • G01N21/00
    • G01N21/68H01L21/31116H01L22/26
    • A plasma equipment seasoning method. The seasoning method comprising the steps of measuring the ratio of optical emission intensity of silicon oxide (SiOx)-based chemical species to optical emission intensity of carbon fluoride compound (CFy)-based chemical species present in a process chamber of plasma equipment before operating the plasma equipment to perform a plasma process, determining whether the value of the measured optical emission intensity ratio is within a predetermined range of normal state or not, and, when reaction gas to be used in the plasma process is supplied into the process chamber based on the result of determination such that the value of the measured optical emission intensity ratio is within the predetermined range of normal state, seasoning the interior of the process chamber to change the ratio of components of the reaction gas, and thus, to change the optical emission intensity ratio.
    • 等离子设备调味方法。 该调味方法包括以下步骤:测量基于氧化硅(SiO 2)的化学物质的光发射强度与氟化碳化合物的光发射强度的比率(CF )的等离子体设备的处理室中存在的化学物质,然后操作等离子体设备以执行等离子体处理,确定测量的光发射强度比值是否在正常状态的预定范围内,以及当反应 基于测定结果将等离子体处理中使用的气体供给到处理室,使得测定的发光强度比值在正常状态的预定范围内,调节处理室的内部以改变 反应气体成分的比例,从而改变光发射强度比。