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1. 发明授权

US06415361B1 Apparatus for controlling cache by using dual-port transaction buffers 有权
标题翻译：用于通过使用双端口事务缓冲器来控制高速缓存的装置
公开(公告)号：US06415361B1
公开(公告)日：2002-07-02
申请号：US09487348
申请日：2000-01-19
申请人： Sang Man Moh , Jong Seok Han , An Do Ki , Woo Jong Hahn , Suk Han Yoon , Gil Rok Oh
发明人： Sang Man Moh , Jong Seok Han , An Do Ki , Woo Jong Hahn , Suk Han Yoon , Gil Rok Oh
IPC分类号： G06F1200
CPC分类号： G06F12/0828 , G06F2212/2542
摘要： An apparatus for controlling a cache in a computing node, which is located between a node bus and an interconnection network to perform a cache coherence protocol, includes: a node bus interface for interfacing with the node bus; an interconnection network interface for interfacing with the interconnection network; a cache control logic means for controlling the cache to perform the cache coherence protocol; bus-side dual-port transaction buffers coupled between said node bus interface and said cache control logic means for buffering transaction requested and replied from or to local processors contained in the computing node; and network-side dual-port transaction buffers coupled between said interconnection network interface and said cache control logic for buffering transaction requested and replied from or to remote processors contained in another computing node coupled to the interconnection network.
摘要翻译：一种用于控制位于节点总线和互连网络之间以执行高速缓存一致性协议的计算节点中的高速缓存的装置包括：用于与节点总线接口的节点总线接口; 用于与互连网络对接的互连网络接口; 用于控制高速缓存以执行高速缓存一致性协议的高速缓存控制逻辑装置; 耦合在所述节点总线接口和所述高速缓存控制逻辑装置之间的总线端双端口事务缓冲器，用于缓冲从计算节点中包含的本地处理器请求和应答的事务; 以及耦合在所述互连网络接口和所述高速缓存控制逻辑之间的网络侧双端口事务缓冲器，用于缓存从耦合到互连网络的另一个计算节点中包含的远程处理器请求和回复的事务。

2. 发明授权

US07755127B2 Capacitor in semiconductor device and method of manufacturing the same 失效
标题翻译：半导体器件中的电容器及其制造方法
公开(公告)号：US07755127B2
公开(公告)日：2010-07-13
申请号：US12492026
申请日：2009-06-25
申请人： An Do Ki
发明人： An Do Ki
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01G4/008 , H01G4/228 , H01G4/33 , H01L28/60 , H01L29/66181 , H01L29/94
摘要： A capacitor may include at least one of a polysilicon layer over a semiconductor substrate; a capacitor dielectric layer over a polysilicon layer; an insulating layer over a capacitor dielectric layer; a metal layer connected to a capacitor dielectric layer through a first region of an insulating layer; an upper metal wiring layer connected to a metal layer over an insulating layer; and/or a lower metal wiring line layer connected to a polysilicon layer through a metal contact that passes through a second region of an insulating layer and a capacitor dielectric layer over the insulating layer.
摘要翻译：电容器可以包括半导体衬底上的多晶硅层中的至少一个; 多晶硅层上的电容器电介质层; 电容器介电层上的绝缘层; 通过绝缘层的第一区域连接到电容器电介质层的金属层; 在绝缘层上连接到金属层的上金属布线层; 和/或下部金属布线层，其通过穿过绝缘层的第二区域和电容器电介质层的金属接触连接到多晶硅层。

3. 发明申请

US20090262483A1 CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件中的电容器及其制造方法
公开(公告)号：US20090262483A1
公开(公告)日：2009-10-22
申请号：US12492026
申请日：2009-06-25
申请人： An Do Ki
发明人： An Do Ki
IPC分类号： H01G2/00
CPC分类号： H01G4/008 , H01G4/228 , H01G4/33 , H01L28/60 , H01L29/66181 , H01L29/94
摘要： A capacitor may include at least one of a polysilicon layer over a semiconductor substrate; a capacitor dielectric layer over a polysilicon layer; an insulating layer over a capacitor dielectric layer; a metal layer connected to a capacitor dielectric layer through a first region of an insulating layer; an upper metal wiring layer connected to a metal layer over an insulating layer; and/or a lower metal wiring line layer connected to a polysilicon layer through a metal contact that passes through a second region of an insulating layer and a capacitor dielectric layer over the insulating layer.
摘要翻译：电容器可以包括半导体衬底上的多晶硅层中的至少一个; 多晶硅层上的电容器电介质层; 电容器介电层上的绝缘层; 通过绝缘层的第一区域连接到电容器电介质层的金属层; 在绝缘层上连接到金属层的上金属布线层; 和/或下部金属布线层，其通过穿过绝缘层的第二区域和电容器电介质层的金属接触连接到多晶硅层。

4. 发明申请

US20070155039A1 Method for manufacturing CMOS image sensor 审中-公开
标题翻译： CMOS图像传感器的制造方法
公开(公告)号：US20070155039A1
公开(公告)日：2007-07-05
申请号：US11646803
申请日：2006-12-27
申请人： An Do Ki
发明人： An Do Ki
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/14689
摘要： A method for manufacturing a CIS reduces or prevents dark current in a photodiode region. In the method, a plurality of gates are formed on a semiconductor substrate, and impurities are implanted in side portions of a predetermined gate to form a photodiode region. Subsequently, a spacer nitride layer is formed and then etched to form a first spacer pattern covering the photodiode region and a second spacer pattern on sidewalls of the rest of the gates. After that, impurities are implanted using the first and second spacer patterns as a mask to form source/drain regions in portions of the semiconductor substrate that are exposed at the side portions of the gate(s). Subsequently, a salicide is formed on the gate and in the exposed portion of the semiconductor substrate.
摘要翻译：用于制造CIS的方法减少或防止光电二极管区域中的暗电流。在该方法中，在半导体衬底上形成多个栅极，并且在预定栅极的侧部注入杂质以形成光电二极管区域。随后，形成间隔氮化物层，然后蚀刻以形成覆盖光电二极管区域的第一间隔物图案和位于其余栅极的侧壁上的第二间隔物图案。之后，使用第一和第二间隔图案作为掩模注入杂质，以在半导体衬底的在栅极的侧部露出的部分形成源/漏区。随后，在栅极和半导体衬底的暴露部分中形成硅化物。

5. 发明申请

US20090114961A1 Image Sensor 有权
标题翻译：图像传感器
公开(公告)号：US20090114961A1
公开(公告)日：2009-05-07
申请号：US12239924
申请日：2008-09-29
申请人： An Do Ki
发明人： An Do Ki
IPC分类号： H01L27/146
CPC分类号： H04N5/3559 , H04N5/37452
摘要： Provided is an image sensor. According to embodiments, the subject image sensor can include a photodiode for converting incident light into electrical signals, a reset transistor for resetting a voltage value of a unit pixel, a drive transistor for providing an output voltage, a select transistor for selecting the unit pixel, a storage capacitor for storing electrons leaking from the photodiode, and a switching transistor for controlling the flow of charge to and from the storage capacitor. The switching transistor can be disposed connected to a node between the photodiode and the reset transistor, and the storage capacitor can be disposed at a side of the switching transistor.
摘要翻译：提供了一种图像传感器。根据实施例，被摄体图像传感器可以包括用于将入射光转换为电信号的光电二极管，用于复位单位像素的电压值的复位晶体管，用于提供输出电压的驱动晶体管，用于选择单位像素的选择晶体管用于存储从光电二极管泄漏的电子的存储电容器，以及用于控制来自存储电容器的电荷流的开关晶体管。开关晶体管可以被布置为连接到光电二极管和复位晶体管之间的节点，并且存储电容器可以设置在开关晶体管的一侧。

6. 发明申请

US20070146962A1 CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件中的电容器及其制造方法
公开(公告)号：US20070146962A1
公开(公告)日：2007-06-28
申请号：US11611695
申请日：2006-12-15
申请人： An Do Ki
发明人： An Do Ki
IPC分类号： H01G2/00
CPC分类号： H01G4/008 , H01G4/228 , H01G4/33 , H01L28/60 , H01L29/66181 , H01L29/94
摘要： A capacitor may include at least one of a polysilicon layer over a semiconductor substrate; a capacitor dielectric layer over a polysilicon layer; an insulating layer over a capacitor dielectric layer; a metal layer connected to a capacitor dielectric layer through a first region of an insulating layer; an upper metal wiring layer connected to a metal layer over an insulating layer; and/or a lower metal wiring line layer connected to a polysilicon layer through a metal contact that passes through a second region of an insulating layer and a capacitor dielectric layer over the insulating layer.
摘要翻译：电容器可以包括半导体衬底上的多晶硅层中的至少一个; 多晶硅层上的电容器电介质层; 电容器介电层上的绝缘层; 通过绝缘层的第一区域连接到电容器电介质层的金属层; 在绝缘层上连接到金属层的上金属布线层; 和/或下部金属布线层，其通过穿过绝缘层的第二区域和电容器电介质层的金属接触连接到多晶硅层。

7. 发明授权

US07884402B2 Image sensor 有权
标题翻译：图像传感器
公开(公告)号：US07884402B2
公开(公告)日：2011-02-08
申请号：US12239924
申请日：2008-09-29
申请人： An Do Ki
发明人： An Do Ki
IPC分类号： H01L31/062 , H01L31/113 , H04N3/14 , H04N5/335 , H04N9/04 , H04N9/083
CPC分类号： H04N5/3559 , H04N5/37452
摘要： Provided is an image sensor. According to embodiments, the subject image sensor can include a photodiode for converting incident light into electrical signals, a reset transistor for resetting a voltage value of a unit pixel, a drive transistor for providing an output voltage, a select transistor for selecting the unit pixel, a storage capacitor for storing electrons leaking from the photodiode, and a switching transistor for controlling the flow of charge to and from the storage capacitor. The switching transistor can be disposed connected to a node between the photodiode and the reset transistor, and the storage capacitor can be disposed at a side of the switching transistor.
摘要翻译：提供了一种图像传感器。根据实施例，被摄体图像传感器可以包括用于将入射光转换为电信号的光电二极管，用于复位单位像素的电压值的复位晶体管，用于提供输出电压的驱动晶体管，用于选择单位像素的选择晶体管用于存储从光电二极管泄漏的电子的存储电容器，以及用于控制来自存储电容器的电荷流的开关晶体管。开关晶体管可以被布置为连接到光电二极管和复位晶体管之间的节点，并且存储电容器可以设置在开关晶体管的一侧。

8. 发明授权

US07560333B2 Capacitor in semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件中的电容器及其制造方法
公开(公告)号：US07560333B2
公开(公告)日：2009-07-14
申请号：US11611695
申请日：2006-12-15
申请人： An Do Ki
发明人： An Do Ki
IPC分类号： H01L21/331
CPC分类号： H01G4/008 , H01G4/228 , H01G4/33 , H01L28/60 , H01L29/66181 , H01L29/94
摘要： A capacitor may include at least one of a polysilicon layer over a semiconductor substrate; a capacitor dielectric layer over a polysilicon layer; an insulating layer over a capacitor dielectric layer; a metal layer connected to a capacitor dielectric layer through a first region of an insulating layer; an upper metal wiring layer connected to a metal layer over an insulating layer; and/or a lower metal wiring line layer connected to a polysilicon layer through a metal contact that passes through a second region of an insulating layer and a capacitor dielectric layer over the insulating layer.
摘要翻译：电容器可以包括半导体衬底上的多晶硅层中的至少一个; 多晶硅层上的电容器电介质层; 电容器介电层上的绝缘层; 通过绝缘层的第一区域连接到电容器电介质层的金属层; 在绝缘层上连接到金属层的上金属布线层; 和/或下部金属布线层，其通过穿过绝缘层的第二区域和电容器电介质层的金属接触连接到多晶硅层。

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