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1. 发明申请

US20120306396A1 LED DRIVING APPARATUS AND METHOD 有权
标题翻译： LED驱动装置和方法
公开(公告)号：US20120306396A1
公开(公告)日：2012-12-06
申请号：US13220041
申请日：2011-08-29
申请人： Change Seok LEE , Yeun Joong LEE , Deuk Hee PARK , Sang Hyun CHA , Jae Shin LEE
发明人： Change Seok LEE , Yeun Joong LEE , Deuk Hee PARK , Sang Hyun CHA , Jae Shin LEE
IPC分类号： H05B37/02
CPC分类号： H05B33/0815
摘要： There are provided an LED driving apparatus and an LED driving method thereof. The LED driving apparatus includes: a light emitting unit including one or more LEDs, a rectifying unit rectifying an input signal to generate a first signal; a signal conversion unit inverting a waveform of a first signal to generate a second signal; and an operation unit arithmetically operating the first and second signals. A plurality of AC signals each having a different waveform are arithmetically operated to generate a signal having a small amount of a ripple component, and an LED is driven by the signal, thus preventing a lifespan of the LED from being shortened by omitting a smoothing electrolytic capacitor, one of main causes shortening the lifespan of an LED driving circuit.
摘要翻译：提供了LED驱动装置及其LED驱动方法。 LED驱动装置包括：发光单元，包括一个或多个LED;整流单元对输入信号进行整流以产生第一信号; 信号转换单元，反转第一信号的波形以产生第二信号; 以及操作单元，算术地操作第一和第二信号。每个具有不同波形的多个AC信号被算术运算以产生具有少量纹波分量的信号，并且由信号驱动LED，从而通过省略平滑电解而防止LED的寿命缩短电容器，主要原因之一是缩短了LED驱动电路的使用寿命。

2. 发明申请

US20110317536A1 CURRENT DRIVING CIRCUIT AND LIGHT STORAGE SYSTEM HAVING THE SAME 审中-公开
标题翻译：具有相同功能的电流驱动电路和光存储系统
公开(公告)号：US20110317536A1
公开(公告)日：2011-12-29
申请号：US12915537
申请日：2010-10-29
申请人： Sang Hyun CHA , Deuk Hee PARK , Jae Shin LEE
发明人： Sang Hyun CHA , Deuk Hee PARK , Jae Shin LEE
IPC分类号： G11B7/00 , H03K3/00
CPC分类号： G11B7/126 , G11B2220/2537
摘要： Disclosed herein are a current driving circuit and a light storage system having the same. The current driving circuit includes a plurality of channel circuits that include a first transistor into which the input current flows, a second transistor generating the output current by mirroring the input current, a plurality of switches connected between the first and second transistors in parallel and optionally electrically connecting the first and second transistors in response to the control signals, a controller optionally activating the control signals each corresponding to the switches according to the magnitude of the input current; and an adder that adds output currents of the channel circuits to generate driving current. The current driving circuit can stably supply the driving current while preventing a delay in the driving current.
摘要翻译：这里公开了一种电流驱动电路和具有该驱动电路的光存储系统。电流驱动电路包括多个沟道电路，其包括输入电流流入的第一晶体管，通过镜像输入电流产生输出电流的第二晶体管，并联连接在第一和第二晶体管之间的多个开关，响应于所述控制信号电连接所述第一和第二晶体管，控制器根据所述输入电流的大小可选地启动每个对应于所述开关的控制信号; 以及加法器，其增加通道电路的输出电流以产生驱动电流。电流驱动电路可以稳定地提供驱动电流，同时防止驱动电流的延迟。

3. 发明申请

US20140035476A1 LIGHT EMITTING DIODE DRIVING APPARATUS 有权
标题翻译：发光二极管驱动装置
公开(公告)号：US20140035476A1
公开(公告)日：2014-02-06
申请号：US13620290
申请日：2012-09-14
申请人： Jong Tae HWANG , Deuk Hee PARK , Sang Hyun CHA , Chang Seok LEE , Yun Joong LEE
发明人： Jong Tae HWANG , Deuk Hee PARK , Sang Hyun CHA , Chang Seok LEE , Yun Joong LEE
IPC分类号： H05B37/00
CPC分类号： H05B33/0815
摘要： There is provided a light emitting diode driving apparatus capable of supplying a constant average current to a light emitting diode by generating a reference voltage used for driving the light emitting diode according to input power and a switching signal switching a path of a current supplied to the light emitting diode. The light emitting diode driving apparatus includes: a reference voltage generating unit generating a reference voltage set based on input power and a switching signal for supplying driving power to a light emitting diode; and a driving unit supplying the driving power to the light emitting diode according to the reference voltage.
摘要翻译：提供了一种发光二极管驱动装置，其能够通过根据输入功率产生用于驱动发光二极管的参考电压，并向切换信号切换提供给发光二极管的电流的路径，向发光二极管提供恒定的平均电流发光二极管。发光二极管驱动装置包括：参考电压产生单元，其基于输入功率产生基准电压和用于向发光二极管提供驱动电力的开关信号; 以及驱动单元，根据参考电压将驱动电力提供给发光二极管。

4. 发明申请

US20140001973A1 LIGHT EMITTING DIODE DRIVING APPARATUS 审中-公开
标题翻译：发光二极管驱动装置
公开(公告)号：US20140001973A1
公开(公告)日：2014-01-02
申请号：US13613692
申请日：2012-09-13
申请人： Deuk Hee PARK , Yun Joong Lee , Sang Hyun Cha , Chang Seok Lee
发明人： Deuk Hee PARK , Yun Joong Lee , Sang Hyun Cha , Chang Seok Lee
IPC分类号： H05B37/02
CPC分类号： H05B33/0815 , H02M1/4258 , Y02B20/346 , Y02B70/126
摘要： There is provided a light emitting diode driving apparatus for controlling the light emitting diode driving according to a feedback signal input through a positive feedback loop, the light emitting diode driving apparatus including: a power converting unit switching input power and supplying driving power to at least one light emitting diode; a feedback unit detecting and feeding back a voltage of the driving power of the power converting unit; and a controlling unit including a comparator having a negative terminal receiving a reference voltage having a set voltage level and a positive terminal receiving the detected voltage from the feedback unit and comparing the reference voltage with the detected voltage to control a switching of the power converting unit according to a comparison result.
摘要翻译：提供了一种发光二极管驱动装置，用于根据通过正反馈环路输入的反馈信号来控制发光二极管驱动，该发光二极管驱动装置包括：功率转换单元，用于切换输入电力并将驱动功率提供给至少一个发光二极管; 反馈单元，检测并反馈所述电力转换单元的驱动电力的电压; 以及控制单元，其包括比较器，其具有接收具有设定电压电平的参考电压的负极端子和从所述反馈单元接收所述检测到的电压的正极端子，并且将所述参考电压与所述检测到的电压进行比较，以控制所述功率转换单元根据比较结果。

5. 发明申请

US20070023614A1 CMOS IMAGE SENSOR HAVING DARK CURRENT COMPENSATION FUNCTION 审中-公开
标题翻译：具有深电流补偿功能的CMOS图像传感器
公开(公告)号：US20070023614A1
公开(公告)日：2007-02-01
申请号：US11458034
申请日：2006-07-17
申请人： Deuk Hee PARK , Won Tae CHOI , Shin Jae KANG , Joo Yul KO
发明人： Deuk Hee PARK , Won Tae CHOI , Shin Jae KANG , Joo Yul KO
IPC分类号： H01L31/00
CPC分类号： H04N5/3696 , H01L27/14603 , H04N5/35518 , H04N5/361
摘要： A CMOS image sensor has a function to compensate a photodetector pixel from a dark current by using a dark pixel. In the CMOS image sensor, the photodetector pixel includes a first reset transistor with a drain connected to a supply voltage and a photodetector diode connected between a source of the first reset transistor and a ground. The dark pixel includes a mirror transistor with a drain connected to the supply voltage and a gate and source connected to a gate of the first reset transistor and a dark photodiode shielded from external light. The dark photodiode is connected between the source of the mirror diode and the ground. The dark pixel provides a current having a magnitude equal with that of a dark current flowing through the dark photodiode to the photodetector diode. This delays the saturation rate of the CMOS image sensor pixel and enhances the dynamic range thereof.
摘要翻译： CMOS图像传感器具有通过使用暗像素来补偿光电检测器像素与暗电流的功能。在CMOS图像传感器中，光电检测器像素包括第一复位晶体管，漏极连接到电源电压，光电二极管连接在第一复位晶体管的源极和地之间。暗像素包括具有连接到电源电压的漏极的反射镜晶体管，以及连接到第一复位晶体管的栅极的栅极和源极以及屏蔽外部光的暗光电二极管。暗光电二极管连接在镜面二极管的源极和地之间。暗像素提供具有与流过暗光电二极管的暗电流相等的光电二极管的电流。这延迟了CMOS图像传感器像素的饱和度并且增强了它的动态范围。

6. 发明申请

US20070114626A1 PHOTODIODE DEVICE AND PHOTODIODE ARRAY FOR OPTICAL SENSOR USING THE SAME 审中-公开
标题翻译：使用光电传感器的光电设备和光电二极管阵列
公开(公告)号：US20070114626A1
公开(公告)日：2007-05-24
申请号：US11533084
申请日：2006-09-19
申请人： Shin Jae KANG , Won Tae CHOI , Joo Yul KO , Deuk Hee PARK
发明人： Shin Jae KANG , Won Tae CHOI , Joo Yul KO , Deuk Hee PARK
IPC分类号： H01L27/14
CPC分类号： H01L27/14645 , H01L27/14603 , H01L27/14647
摘要： The invention relates a photodiode device and a photodiode array using the same capable of detecting short and long wavelengths of visible light at a high efficiency. The photodiode device includes: a first conductivity type semiconductor substrate; a second conductivity type buried layer, an intrinsic semiconductor layer and a first conductivity type semiconductor layer formed on the semiconductor substrate in their order; and a second conductivity type well layer formed on the first conductivity type semiconductor layer. The second conductivity type buried layer, the intrinsic semiconductor layer and the first conductivity type semiconductor layer form a pin junction diode for detecting the long wavelength of visible light, and the first conductivity type semiconductor layer and the second conductivity type well layer form a p-n junction diode for detecting a short wavelength of light.
摘要翻译：本发明涉及一种能够以高效率检测可见光的短波长和长波长的光电二极管器件和使用该光电二极管器件的光电二极管阵列。光电二极管装置包括：第一导电型半导体衬底; 第二导电型掩埋层，本征半导体层和形成在半导体衬底上的第一导电类型半导体层; 以及形成在第一导电类型半导体层上的第二导电类型阱层。第二导电类型掩埋层，本征半导体层和第一导电类型半导体层形成用于检测可见光的长波长的pin结二极管，并且第一导电类型半导体层和第二导电类型阱层形成pn结用于检测短波长的光的二极管。

7. 发明申请

US20070023612A1 UNIT PIXEL OF CMOS IMAGE SENSOR 失效
标题翻译： CMOS图像传感器的单元像素
公开(公告)号：US20070023612A1
公开(公告)日：2007-02-01
申请号：US11458018
申请日：2006-07-17
申请人： Joo Yul KO , Won Tae CHOI , Deuk Hee PARK , Shin Jae KANG
发明人： Joo Yul KO , Won Tae CHOI , Deuk Hee PARK , Shin Jae KANG
IPC分类号： H01L27/00
CPC分类号： H04N5/3745 , H04N5/361
摘要： The invention provides a unit pixel of a CMOS image sensor which compensates for a dark current generated in a photo diode to enhance its driving range. In the unit pixel, a photo diode generates a charge in accordance with a received light amount. A drive has a gate for receiving the charge in the photo diode to output as an electrical signal and a drain to which a power voltage is applied. Also, a saturation detector receives a gate voltage of the drive transistor and judges the drive transistor saturated if an output voltage is smaller than a preset reference voltage. In addition, a switch connects or disconnects between the power voltage and the gate of the drive transistor in response to the judgment of the saturation detector.
摘要翻译：本发明提供CMOS图像传感器的单位像素，其补偿在光电二极管中产生的暗电流以增强其驱动范围。在单位像素中，光电二极管根据接收的光量产生电荷。驱动器具有用于接收光电二极管中的电荷的栅极作为电信号和施加电源电压的漏极输出。此外，饱和检测器接收驱动晶体管的栅极电压，并且如果输出电压小于预设参考电压，则判断驱动晶体管饱和。此外，响应于饱和度检测器的判断，开关连接或断开驱动晶体管的电源电压和栅极之间的连接。

8. 发明申请

US20090085140A1 FINGER TYPE PHOTODIODE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：手指型光电及其制造方法
公开(公告)号：US20090085140A1
公开(公告)日：2009-04-02
申请号：US11967968
申请日：2007-12-31
申请人： Deuk Hee PARK , Kyoung Soo KWON , Chae Dong GO , Ha Woong JEONG
发明人： Deuk Hee PARK , Kyoung Soo KWON , Chae Dong GO , Ha Woong JEONG
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/103 , H01L31/02168 , H01L31/022408 , H01L31/0352 , H01L31/18
摘要： Provided are a finger type photodiode and a method of manufacturing the same, which can reduce noise by forming a shallow doping layer. The finger type photodiode includes a bottom substrate supporting layers to be formed thereon, an epitaxial layer formed on the bottom substrate, a finger doping layer formed in a finger shape on a top surface of the epitaxial layer, and a shallow doping layer formed with a shallow depth on an externally exposed top surface of the epitaxial layer and a top surface of the finger doping layer. Since the dangling bond generated on the epitaxial layer and the finger doping layer is reduced, noise can be reduced, thereby improving the light efficiency and reliability of the photodiode.
摘要翻译：提供一种手指型光电二极管及其制造方法，其可以通过形成浅掺杂层来降低噪声。手指型光电二极管包括支撑要形成在其上的层的底部衬底，在底部衬底上形成的外延层，在外延层的顶表面上以手指形状形成的指状掺杂层和形成有外延层的浅掺杂层在外部暴露的外延层顶表面上的浅深度和指状掺杂层的顶表面。由于在外延层和指状掺杂层上产生的悬挂键减少，所以可以降低噪声，从而提高光电二极管的光效率和可靠性。

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