专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20150220269A1 STORAGE DEVICE AND OPERATING METHOD THEREOF 审中-公开
标题翻译：存储器件及其操作方法
公开(公告)号：US20150220269A1
公开(公告)日：2015-08-06
申请号：US14610513
申请日：2015-01-30
申请人： Sang Hoon LEE , Dong-Woo KIM
发明人： Sang Hoon LEE , Dong-Woo KIM
IPC分类号： G06F3/06
CPC分类号： G06F3/061 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2212/7208 , H01L27/1157 , H01L27/11575 , H01L27/11582
摘要： An operating method of a storage device includes receiving an operation request from a host. The method includes interpreting the operation request as one of a multi-plane operation request and a 1-plane operation request. The method includes outputting an operation sequence corresponding to the interpreted operation request. The storage device includes at least one vertical flash memory device and a memory controller to control the at least one vertical flash memory device.
摘要翻译：存储装置的操作方法包括从主机接收操作请求。该方法包括将操作请求解释为多平面操作请求和1平面操作请求之一。该方法包括输出与解释的操作请求对应的操作序列。存储设备包括至少一个垂直闪存设备和用于控制至少一个垂直闪存设备的存储器控制器。

2. 发明申请

US20070183150A1 SURFACE LIGHT SOURCE DEVICE AND LIQUID CRYSTAL DISPLAY APPARATUS HAVING THE SAME 审中-公开
标题翻译：表面光源装置和液晶显示装置
公开(公告)号：US20070183150A1
公开(公告)日：2007-08-09
申请号：US11735005
申请日：2007-04-13
申请人： Hyeon-Yong JANG , Dong-Woo KIM , Min-Gyu KIM
发明人： Hyeon-Yong JANG , Dong-Woo KIM , Min-Gyu KIM
IPC分类号： F21S4/00
CPC分类号： H01J61/305 , G02F1/133604 , H01J65/046
摘要： A surface light source device includes a light source body having an internal space. A partition wall is disposed in the internal space of the light source body to divide the internal space into a plurality of discharge spaces. The partition wall has end portions that make contact with inner surface of the light source body. The partition wall has a throughhole, through which the discharge spaces are connected to each other. The light source body includes a voltage applying part that applies a voltage to the discharge space to generate plasma in the discharge space. A barrier is disposed adjacent to the throughhole to restrict a flow of the plasma generated from a discharge gas through the throughhole. The barrier screens the throughhole to restrict the flow of the plasma through the throughhole. Therefore, uniformity of luminance of the surface light source device is improved.
摘要翻译：面光源装置包括具有内部空间的光源体。分隔壁设置在光源体的内部空间中，以将内部空间分成多个放电空间。分隔壁具有与光源体的内表面接触的端部。分隔壁具有通孔，排放空间通过该通孔相互连接。光源体包括向放电空间施加电压以在放电空间中产生等离子体的电压施加部。屏障靠近通孔设置，以限制从放电气体通过通孔产生的等离子体的流动。屏障屏蔽通孔以限制等离子体通过通孔的流动。因此，提高了表面光源装置的亮度的均匀性。

3. 发明申请

US20190206592A1 SELF-EXTINGUISHING POWER CABLE WITH MICROCAPSULES AND METHOD FOR MANUFACTURING SAME 审中-公开
公开(公告)号：US20190206592A1
公开(公告)日：2019-07-04
申请号：US16331534
申请日：2017-08-02
申请人： Dong-Woo KIM , KOREA ELECTRIC POWER CORPORATION
发明人： Dong-Woo KIM , Sung-Min KIM , O-Deuk KWON , Young-Sung KIM , Il-Joo MUN
IPC分类号： H01B13/00 , H01B3/30 , H01B7/282 , H01B7/295 , H01B9/02 , H01B7/285
CPC分类号： H01B13/0026 , H01B3/30 , H01B3/302 , H01B7/282 , H01B7/2825 , H01B7/285 , H01B7/295 , H01B9/027 , Y02A30/14
摘要： Disclosed is a self-extinguishing power cable with microcapsules and a method for manufacturing the same. A method of manufacturing a self-extinguishing power cable with a microcapsule, the method includes applying a mixed solution of water-soluble adhesive, a magnetic powder and a swellable powder on one surface of a first nonwoven fabric; magnetically treating and drying the first nonwoven fabric; pressing one surface of a second nonwoven fabric on the one surface of the first nonwoven fabric to form a single nonwoven fabric; and forming the single nonwoven fabric into a neutral conductor water blocking layer of an electrical power cable to manufacture the electrical power cable, wherein the microcapsule is provided between the first nonwoven fabric and the second nonwoven fabric.

4. 发明申请

US20140054675A1 VERTICAL TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 审中-公开
标题翻译：垂直型半导体器件及其制造方法
公开(公告)号：US20140054675A1
公开(公告)日：2014-02-27
申请号：US13945336
申请日：2013-07-18
申请人： Chae-Ho Kim , Sung-Hae Lee , Toshiro Nakanishi , Dong-Woo Kim
发明人： Sung-Hae LEE , Toshiro NAKANISHI , Dong-Woo KIM , Chae-Ho KIM
IPC分类号： H01L29/792 , H01L29/66
CPC分类号： H01L29/7926 , H01L27/11582 , H01L29/66666 , H01L29/66833
摘要： According to example embodiments, a vertical type semiconductor device includes a pillar structure on a substrate. The pillar structure includes a semiconductor pattern and a channel pattern. The semiconductor pattern includes an impurity region. A first word line structure faces the channel pattern and is horizontally extended while surrounding the pillar structure. A second word line structure has one side facing the impurity region of the semiconductor pattern and another side facing the substrate. A common source line is provided at a substrate portion adjacent to a sidewall end portion of the second word line structure.
摘要翻译：根据示例性实施例，垂直型半导体器件包括在衬底上的柱结构。柱结构包括半导体图案和沟道图案。半导体图案包括杂质区域。第一字线结构面向通道图案，并且在围绕柱结构的同时水平延伸。第二字线结构具有面向半导体图案的杂质区域和面向衬底的另一侧的一侧。在与第二字线结构的侧壁端部相邻的衬底部分处提供公共源极线。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式