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    • 3. 发明授权
    • Power transmission apparatus and power reception apparatus
    • 电力传输装置和电力接收装置
    • US09006936B2
    • 2015-04-14
    • US13491112
    • 2012-06-07
    • Yong Hae KimSeung Youl KangSang Hoon CheonMyung Lae LeeTaehyoung Zyung
    • Yong Hae KimSeung Youl KangSang Hoon CheonMyung Lae LeeTaehyoung Zyung
    • H02J5/00H01F27/42
    • H02J50/80H02J5/005H02J50/12
    • A power transmitter includes a signal processor that externally obtains a reception power state signal depending on variation of a distance between transmission and reception coil units, a modulation controller configured to a modulation frequency for selecting a frequency band having maximum power transmission performance, based on the reception power state signal, a power signal generator that generates a power signal, and a modulator that modulates the power signal in response to the modulation frequency, the reception coil unit being configured to transmit the modulated signal. A power receiver includes a reception coil unit that receives a power signal, a power generator that generates power by receiving the power signal from the reception coil unit, and a signal generator that generates a reception power state signal depending on the generated power level and transmits the latter signal to a transmission coil unit corresponding to the reception coil unit.
    • 电力发送器包括:信号处理器,其根据发送和接收线圈单元之间的距离的变化外部获取接收功率状态信号;调制控制器,被配置为用于选择具有最大功率传输性能的频带的调制频率,基于 接收功率状态信号,产生电力信号的电力信号发生器和响应于调制频率调制功率信号的调制器,接收线圈单元被配置为发送调制信号。 电力接收机包括接收电力信号的接收线圈单元,通过接收来自接收线圈单元的电力信号而发电的发电机,以及根据发电功率电平生成接收功率状态信号的信号发生器, 后者发送到对应于接收线圈单元的发送线圈单元。
    • 10. 发明授权
    • Method of fabricating thin film transistor having multilayer structure and active matrix display device including the thin film transistor
    • 制造具有多层结构的薄膜晶体管的方法和包括该薄膜晶体管的有源矩阵显示装置
    • US07642143B2
    • 2010-01-05
    • US11870809
    • 2007-10-11
    • Yong Hae KimChoong Heui ChungJae Hyun MoonYoon Ho Song
    • Yong Hae KimChoong Heui ChungJae Hyun MoonYoon Ho Song
    • H01L21/338
    • H01L29/78603H01L27/124H01L29/4908
    • Provided are a method of fabricating a multilayered thin film transistor using a plastic substrate and an active matrix display device including the thin film transistor fabricated by the method. The method includes: preparing a substrate formed of plastic; forming a buffer insulating layer on the plastic substrate; forming a silicon layer on the buffer insulating layer; patterning the silicon layer to form an active layer; forming a gate insulating layer on the active layer; stacking a plurality of gate metal layers on the gate insulating layer; patterning the plurality of gate metal layers; and etching a corner region of the lowest gate metal layer formed on the gate insulating layer of the patterned gate metal layers. Accordingly, a gate metal is formed which includes a multilayered gate metal layer and has an etched corner region, thereby reducing an electric field of the corner to reduce a leakage current of the TFT.
    • 提供了使用塑料基板制造多层薄膜晶体管的方法和包括通过该方法制造的薄膜晶体管的有源矩阵显示装置。 该方法包括:制备由塑料形成的基材; 在塑料基板上形成缓冲绝缘层; 在所述缓冲绝缘层上形成硅层; 图案化硅层以形成有源层; 在有源层上形成栅极绝缘层; 在栅绝缘层上堆叠多个栅极金属层; 图案化多个栅极金属层; 并且蚀刻形成在图案化栅极金属层的栅极绝缘层上的最低栅极金属层的拐角区域。 因此,形成栅极金属,其包括多层栅极金属层并且具有蚀刻的拐角区域,从而减小拐角的电场以减小TFT的漏电流。