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    • 2. 发明授权
    • Ankle support to be attached to footwear and footwear equipped with it
    • 踝关节支撑装配鞋类和鞋类
    • US07370442B2
    • 2008-05-13
    • US11357669
    • 2006-02-17
    • Young Kyun JungYoung Il Joen
    • Young Kyun JungYoung Il Joen
    • A43B7/20
    • A43C1/00A43B7/1495A43B7/20
    • Disclosed herein is footwear having an ankle support. The footwear has a sole, an upper, and a heel section. The ankle support is worn to surround part of the foot and part of the leg between which an ankle joint is located, wherein a lower portion of the ankle support is secured to an interior of the footwear. According to this invention, the wearer's ankle joint moves together with the ankle support without being constrained by the footwear, thus ensuring the flexible movement of the ankle, therefore allowing unrestricted motion. Further, the lower portion of the ankle support is attached to the interior of the footwear, thus allowing the wearer's ankle to be supported by both the footwear and the ankle support, therefore efficiently supporting the ankle, even when large shocks are applied to the ankle due to intense activity.
    • 本文公开了具有脚踝支撑的鞋类。 鞋类有鞋底,鞋跟和脚跟部分。 脚踝支撑件被佩戴以围绕足部和腿部的一部分,踝关节位于踝关节之间,其中脚踝支撑件的下部固定到鞋的内部。 根据本发明,穿着者的脚踝关节与脚踝支撑一起移动而不受鞋类约束,从而确保踝部的柔性运动,从而允许不受限制的运动。 此外,脚踝支撑件的下部附接到鞋类的内部,从而允许穿着者的脚踝由鞋类和脚踝支撑件支撑,因此即使在踝部施加大的冲击时也有效地支撑脚踝 由于激烈的活动。
    • 3. 发明授权
    • Semiconductor devices and method of manufacturing the same
    • 半导体器件及其制造方法
    • US08766352B2
    • 2014-07-01
    • US13218971
    • 2011-08-26
    • Young Kyun Jung
    • Young Kyun Jung
    • H01L29/78H01L21/336
    • H01L27/11578H01L27/11582H01L29/7926
    • A semiconductor device includes a pipe channel layer formed over a substrate, a first vertical channel layer formed over the pipe channel layer to couple the pipe channel layer to a bit line, a second vertical channel layer formed over the pipe channel layer to couple the pipe channel layer to a source line, a multi-layer comprising a charge trap layer and formed to surround the first vertical channel layer, the second vertical channel layer, and the pipe channel layer, an insulating barrier layer formed to surround the multi-layer, a plurality of first conductive layers formed between the pipe channel layer and the bit line, wherein the first vertical channel layer passes through the first conductive layers, and a plurality of second conductive layers formed between the pipe channel layer and the source line, wherein the second vertical layer passes through the second conductive layers.
    • 半导体器件包括形成在衬底上的管道沟道层,形成在管道沟道层上以将管道沟道层耦合到位线的第一垂直沟道层,在管道沟道层上形成的第二垂直沟道层,以耦合管道 沟道层到源极线,多层,包括电荷陷阱层并形成为围绕第一垂直沟道层,第二垂直沟道层和管道沟道层,形成为围绕多层的绝缘势垒层, 形成在管道沟道层和位线之间的多个第一导电层,其中第一垂直沟道层穿过第一导电层,以及形成在管道沟道层和源极线之间的多个第二导电层,其中, 第二垂直层通过第二导电层。