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1. 发明授权

US09543023B2 Partial block erase for block programming in non-volatile memory 有权
标题翻译：非易失性存储器中块编程的部分块擦除
公开(公告)号：US09543023B2
公开(公告)日：2017-01-10
申请号：US14794236
申请日：2015-07-08
申请人： SanDisk Technologies Inc.
发明人： Chun-hung Lai , Cheng-Kuan Yin , Shih-Chung Lee , Deepanshu Dutta , Ken Oowada
IPC分类号： G11C16/08 , G11C16/16 , G11C16/14 , G11C11/56 , G11C16/04 , G11C16/10 , G11C16/34
CPC分类号： G11C16/14 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/3431 , G11C16/349 , G11C2211/5648 , G11C2216/24
摘要： A non-volatile memory system utilizes partial block erasing during program operations to mitigate the effects of programming pass voltage disturbances. A programming request is received that is associated with a group of word lines from a block, such as all or a portion of the word lines. The system erases and soft programs the block prior to beginning programming. The system programs a subset of the word lines of the block for the programming request. After programming the subset of word lines, the system pauses the programming operation and performs an erase operation for the unprogrammed word lines of the block. The already programmed word lines and one or more optional buffer word lines may be inhibited from erasing during the erase operation. After erasing the unprogrammed word lines, the system completes the programming request by programming the remaining user data in the unprogrammed region of the block.
摘要翻译：非易失性存储器系统在编程操作期间利用部分块擦除来减轻编程通过电压干扰的影响。接收与来自块（例如字线的全部或一部分）的一组字线相关联的编程请求。在开始编程之前，系统擦除并软编程块。系统编程用于编程请求的块的字线的子集。在对字线子集编程之后，系统暂停编程操作，并对块的未编程字线执行擦除操作。可以在擦除操作期间禁止已编程的字线和一个或多个可选的缓冲字线擦除。在擦除未编程的字线之后，系统通过对块的未编程区域中剩余的用户数据进行编程来完成编程请求。

2. 发明申请

US20160217860A1 Partial Block Erase For Block Programming In Non-Volatile Memory 有权
标题翻译：非易失性存储器中块编程的部分块擦除
公开(公告)号：US20160217860A1
公开(公告)日：2016-07-28
申请号：US14794236
申请日：2015-07-08
申请人： SanDisk Technologies Inc.
发明人： Chun-hung Lai , Cheng-Kuan Yin , Shih-Chung Lee , Deepanshu Dutta , Ken Oowada
IPC分类号： G11C16/14 , G11C16/34 , G11C16/04
CPC分类号： G11C16/14 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/3431 , G11C16/349 , G11C2211/5648 , G11C2216/24
摘要： A non-volatile memory system utilizes partial block erasing during program operations to mitigate the effects of programming pass voltage disturbances. A programming request is received that is associated with a group of word lines from a block, such as all or a portion of the word lines. The system erases and soft programs the block prior to beginning programming. The system programs a subset of the word lines of the block for the programming request. After programming the subset of word lines, the system pauses the programming operation and performs an erase operation for the unprogrammed word lines of the block. The already programmed word lines and one or more optional buffer word lines may be inhibited from erasing during the erase operation. After erasing the unprogrammed word lines, the system completes the programming request by programming the remaining user data in the unprogrammed region of the block.
摘要翻译：非易失性存储器系统在编程操作期间利用部分块擦除来减轻编程通过电压干扰的影响。接收与来自块（例如字线的全部或一部分）的一组字线相关联的编程请求。在开始编程之前，系统擦除并软编程块。系统编程用于编程请求的块的字线的子集。在对字线子集编程之后，系统暂停编程操作，并对块的未编程字线执行擦除操作。可以在擦除操作期间禁止已编程的字线和一个或多个可选的缓冲字线擦除。在擦除未编程的字线之后，系统通过对块的未编程区域中剩余的用户数据进行编程来完成编程请求。

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