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    • 3. 发明授权
    • Digital programmable attenuator
    • 数字可编程衰减器
    • US4438415A
    • 1984-03-20
    • US343737
    • 1982-01-29
    • Samuel Hopfer
    • Samuel Hopfer
    • H01P1/22
    • H01P1/227
    • A digitally programmable attenuator for high speed and a large dynamic range is constructed with a phase-controlled attenuator for small steps of attenuation and an attenuator of switched resistive pads for larger steps. The attenuators are connected in tandem and actuated combinatorially with the phase-controlled attenuator being switched into operation for the small steps, and the resistive pads being switched into operation for the large steps. A phase-controlled attenuator is constructed to permit adjustment of the attenuator characteristic, and a switched-pad attenuator is constructed to be phase shiftless.
    • 用于高速和大动态范围的数字可编程衰减器由相位控制的衰减器构成,用于小步长衰减,并且用于较大步长的开关电阻垫的衰减器。 衰减器串联连接并组合启动,相位控制的衰减器被切换到小步骤的操作中,并且电阻焊盘被切换成大步骤的操作。 相位控制的衰减器被构造为允许调节衰减器特性,并且开关式衰减器被构造为相位偏移。
    • 5. 发明授权
    • Variable microwave attenuator
    • 可变微波衰减器
    • US4009456A
    • 1977-02-22
    • US323856
    • 1973-01-15
    • Samuel Hopfer
    • Samuel Hopfer
    • H01P1/203H01P1/22H03H7/25
    • H03H7/255H01P1/227H03H7/25
    • A broadband microwave attenuator is formed by connecting a plurality of PIN diodes in a modified Tee network. Four semiconductor chips of PIN diode material are arranged in a flat layer sandwiched between conductors to form a strip-line configuration of a TEM transmission line, whereby the diodes are part of the line. This strip-line construction is used with outer diodes connected in series circuit relation between input and output terminals, and inner diodes in shunt relation to ground to form the Tee network. The diodes are constructed as silicon chips and are mounted in very close relation with a substantially uniform conductive strip forming the series-circuit connection between the central diodes.
    • 通过在修改的Tee网络中连接多个PIN二极管来形成宽带微波衰减器。 PIN二极管材料的四个半导体芯片布置在夹在导体之间的平坦层中以形成TEM传输线的带状配置,由此二极管是线的一部分。 这种带状线结构用于输入和输出端子之间串联电路连接的外部二极管和与地面分流关系的内部二极管以形成T形网络。 二极管被构造为硅芯片,并且与形成中央二极管之间的串联电路连接的基本上均匀的导电条非常紧密地安装。