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1. 发明申请

US20180262255A1 APPARATUS AND METHOD FOR SELECTING BEAM PATTERN IN COMMUNICATION SYSTEM SUPPORTING BEAMFORMING SCHEME 审中-公开
公开(公告)号：US20180262255A1
公开(公告)日：2018-09-13
申请号：US15763002
申请日：2016-09-23
申请人： Samsung Electronics Co., Ltd , Korea University Research and Business Foundation
发明人： Inkyu LEE , Jong-Ho OH , Bong-Jin KIM , Tae-Yeong KIM , Min-Ki AHN , Tae-Seok OH , Seok-Ju JANG
IPC分类号： H04B7/06 , H04B7/08 , H04B7/0491
CPC分类号： H04B7/0695 , H04B7/0491 , H04B7/0617 , H04B7/088
摘要： The present invention relates to a 5th-generation (5G) or pre-5G communication system which is provided for supporting a higher data transfer rate after a 4th-generation (4G) communication system such as a long term evolution (LTE). The present invention provides a method for selecting, by an access point (AP), a beam in a communication system supporting a beamforming scheme, the method comprising: a step of transmitting information which indicates whether or not a duplicated beacon transmission interval (BTI) is operated; and a step of performing a transmit sector sweep (TXSS) process at least twice during the duplicated BTI.

2. 发明申请

US20140103192A1 BINARY CMOS IMAGE SENSORS, METHODS OF OPERATING SAME, AND IMAGE PROCESSING SYSTEMS INCLUDING SAME 有权
标题翻译：二进制CMOS图像传感器，其操作方法和包括其中的图像处理系统
公开(公告)号：US20140103192A1
公开(公告)日：2014-04-17
申请号：US14051179
申请日：2013-10-10
申请人： Samsung Electronics Co., Ltd.
发明人： Tae-Yon LEE , Ju Hwan JUNG , Seok Yong HONG , Tae-Chan KIM , Dong Ki MIN , Yoon Dong PARK , Sang-Chul SUL , Tae-Seok OH , Je Il RYU , Kwang-Hyun LEE , Young-Gu JIN
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14612 , H01L27/1464 , H04N5/3765
摘要： A binary complementary metal-oxide-semiconductor (CMOS) image sensor includes a pixel array and a readout circuit. The pixel array includes at least one pixel having a plurality of sub-pixels. The readout circuit is configured to quantize a pixel signal output from the pixel using a reference signal. The pixel signal corresponds to sub-pixel signals output from sub-pixels, from among the plurality of sub-pixels, activated in response to incident light.
摘要翻译：二元互补金属氧化物半导体（CMOS）图像传感器包括像素阵列和读出电路。像素阵列包括具有多个子像素的至少一个像素。读出电路被配置为使用参考信号量化从像素输出的像素信号。像素信号对应于从子像素输出的子像素信号，从响应于入射光激活的多个子像素之中。

3. 发明申请

US20150311241A1 STACK TYPE IMAGE SENSOR 有权
标题翻译：堆叠式图像传感器
公开(公告)号：US20150311241A1
公开(公告)日：2015-10-29
申请号：US14602427
申请日：2015-01-22
申请人： Samsung Electronics Co., Ltd.
发明人： Byung-Jun PARK , Seung-Hun SHIN , Chang-Rok MOON , Tae-Seok OH , June-Taeg LEE
IPC分类号： H01L27/146
CPC分类号： H01L27/14605 , H01L21/76898 , H01L23/481 , H01L27/14612 , H01L27/1462 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14687
摘要： A stack type image sensor may include: a first chip including a via isolation trench penetrating a first substrate, a via isolation layer including an insulation material in the via isolation trench, a first conductive layer on the first substrate, and a first insulation layer; a second chip including a second conductive layer on a second substrate, and a second insulation layer contacting the first insulation layer; a first via trench penetrating the first substrate to expose the second conductive layer with respect to the trench; and a first through via formed in the first via trench, and including a third conductive layer insulated from the first substrate by the via isolation layer, the third conductive layer electrically connecting the first conductive layer to the second conductive layer. The third conductive layer may be formed in the via isolation trench.
摘要翻译：堆叠型图像传感器可以包括：第一芯片，其包括穿过第一衬底的通孔隔离沟槽，在通孔隔离沟槽中包括绝缘材料的通孔隔离层，第一衬底上的第一导电层和第一绝缘层; 第二芯片，包括在第二基板上的第二导电层，以及与第一绝缘层接触的第二绝缘层; 穿过所述第一衬底以相对于所述沟槽暴露所述第二导电层的第一通孔沟槽; 以及形成在所述第一通孔沟槽中的第一通孔，并且包括通过所述通孔隔离层与所述第一基板绝缘的第三导电层，所述第三导电层将所述第一导电层电连接到所述第二导电层。第三导电层可以形成在通孔隔离沟槽中。

4. 发明申请

US20160365374A1 STACK TYPE IMAGE SENSOR 审中-公开
公开(公告)号：US20160365374A1
公开(公告)日：2016-12-15
申请号：US15249785
申请日：2016-08-29
申请人： Samsung Electronics Co., Ltd.
发明人： Byung-Jun PARK , Seung-Hun SHIN , Chang-Rok MOON , Tae-Seok OH , June-Taeg LEE
IPC分类号： H01L27/146
CPC分类号： H01L27/14605 , H01L21/76898 , H01L23/481 , H01L27/14612 , H01L27/1462 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14687
摘要： A stack type image sensor may include: a first chip including a via isolation trench penetrating a first substrate, a via isolation layer including an insulation material in the via isolation trench, a first conductive layer on the first substrate, and a first insulation layer; a second chip including a second conductive layer on a second substrate, and a second insulation layer contacting the first insulation layer; a first via trench penetrating the first substrate to expose the second conductive layer with respect to the trench; and a first through via formed in the first via trench, and including a third conductive layer insulated from the first substrate by the via isolation layer, the third conductive layer electrically connecting the first conductive layer to the second conductive layer. The third conductive layer may be formed in the via isolation trench.

5. 发明申请

US20140103401A1 IMAGE SENSOR 审中-公开
标题翻译：图像传感器
公开(公告)号：US20140103401A1
公开(公告)日：2014-04-17
申请号：US14051040
申请日：2013-10-10
申请人： Samsung Electronics Co., Ltd.
发明人： Tae-Seok OH , Tae-Yon LEE , Young-Gu JIN , Min-Ho KIM , Tae-Chan KIM , Sang-Chul SUL , Kwang-Hyun LEE
IPC分类号： H01L27/148
CPC分类号： H01L27/14806 , H01L27/14607 , H01L27/14609 , H01L27/14689
摘要： An image sensor is provided. The image sensor includes a well of a second conductivity type formed on an impurity layer of a first conductivity type, source and drain regions of the first conductivity type, formed in the well to be spaced apart from each other, a first photo diode of the first conductivity type formed in the well to overlap the source and drain regions, a second photo diode of the first conductivity type formed so as not to overlap the source and drain regions and formed to be adjacent to the first photo diode, and a gate electrode formed on the first and second photo diodes.
摘要翻译：提供图像传感器。图像传感器包括形成在第一导电类型的杂质层上的第二导电类型的阱，第一导电类型的源极和漏极区域形成在阱中彼此间隔开，第一光电二极管在阱中形成的与源极和漏极区重叠的第一导电类型，形成为不与源极和漏极区重叠并形成为与第一光电二极管相邻的第一导电类型的第二光电二极管，以及栅电极形成在第一和第二光电二极管上。

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