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1. 发明申请

US20220271129A1 SEMICONDUCTOR DEVICE INCLUDING FIN AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20220271129A1
公开(公告)日：2022-08-25
申请号：US17734457
申请日：2022-05-02
申请人： Samsung Electronics Co., Ltd.
发明人： Sungmin KIM
IPC分类号： H01L29/36 , H01L29/16 , H01L29/78
摘要： A semiconductor device includes a substrate; and a fin protruding from the substrate. The fin includes a first material and a second material. The fin includes a lower section, a middle section, and an upper section. The middle section has a smaller width at a middle portion than a width at lower and upper portions of the middle section. A concentration of the second material gradually decreases from the middle portion in upward and downward directions.

2. 发明申请

US20220181161A1 METHODS OF FORMING A SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERNS ON A BONDING LAYER AND SEMICONDUCTOR DEVICES FORMED BY THE SAME 有权
公开(公告)号：US20220181161A1
公开(公告)日：2022-06-09
申请号：US17678093
申请日：2022-02-23
申请人： Samsung Electronics Co., Ltd.
发明人： Sungmin KIM , Daewon Ha
IPC分类号： H01L21/306 , H01L21/20 , H01L21/3105 , H01L21/762
摘要： Methods of forming a semiconductor device and semiconductor device formed by the methods are provided. The methods of forming a semiconductor device may include providing a first substrate and a first bonding layer that is provided on the first substrate, forming a sacrificial pattern and an active pattern on a second substrate, forming a second bonding layer on the active pattern, bonding the second bonding layer onto the first bonding layer, removing the second substrate, and removing the sacrificial pattern to expose the active pattern. Forming the sacrificial pattern and the active pattern on the second substrate may include forming a preliminary sacrificial pattern and the active pattern on the second substrate and oxidizing the preliminary sacrificial pattern. The preliminary sacrificial pattern and the active pattern may be sequentially stacked on the second substrate.

3. 发明申请

US20220020880A1 SEMICONDUCTOR DEVICE HAVING UPPER CHANNEL AND LOWER CHANNEL AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20220020880A1
公开(公告)日：2022-01-20
申请号：US17126260
申请日：2020-12-18
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Sungmin KIM
IPC分类号： H01L29/78 , H01L27/12 , H01L29/66 , H01L29/06 , H01L21/84 , H01L29/423
摘要： A semiconductor device and a method of manufacturing a semiconductor device, the device including a first semiconductor pattern on a substrate, the first semiconductor pattern including a lower channel; a second semiconductor pattern on the first semiconductor pattern and spaced apart from the first semiconductor pattern in a vertical direction, the second semiconductor pattern including an upper channel extending in the vertical direction; a gate electrode covering the lower channel and surrounding the upper channel; and source/drain patterns on opposite sides of the upper channel, wherein the substrate and the first semiconductor pattern have a doping concentration of 1019/cm3 or less.

4. 发明申请

US20200310741A1 METHOD AND APPARATUS FOR CONTROLLING SOUND SIGNAL OUTPUT 审中-公开
公开(公告)号：US20200310741A1
公开(公告)日：2020-10-01
申请号：US16896417
申请日：2020-06-09
申请人： Samsung Electronics Co., Ltd.
发明人： Hyungjin KWON , Kwanhee HAN , Sungmin KIM
IPC分类号： G06F3/16 , H04S7/00 , H04R1/10 , H04R3/04 , G06F3/0482
摘要： A method and an apparatus control sound signal output. The method of controlling a sound signal output in a terminal includes: storing receiver identifications and corresponding sound signal control parameters associated with each other by the terminal; providing a receiver selection interface capable of selecting one from a list of the receiver identifications and the receiver identifications included in the list by the terminal; receiving one receiver identification through the receiver selection interface; converting a digital sound signal into an analog sound signal by applying a sound signal control parameter corresponding to the received receiver identification; and outputting the analog sound signal.

5. 发明申请

US20170352664A1 SEMICONDUCTOR DEVICE HAVING CONTACT PLUGS AND METHOD OF FORMING THE SAME 审中-公开
公开(公告)号：US20170352664A1
公开(公告)日：2017-12-07
申请号：US15685657
申请日：2017-08-24
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Changseop YOON , Sungmin KIM , Chiwon CHO
IPC分类号： H01L27/092 , H01L27/02 , H01L21/8238 , H01L29/06 , H01L29/66 , H01L23/485 , H01L29/165 , H01L21/8234 , H01L27/088
CPC分类号： H01L27/0924 , H01L21/823431 , H01L21/823475 , H01L21/823821 , H01L21/823871 , H01L23/485 , H01L27/0207 , H01L27/0886 , H01L27/1104 , H01L29/0653 , H01L29/165 , H01L29/41791 , H01L29/665
摘要： A semiconductor device including a first fin active area substantially parallel to a second fin active area, a first source/drain in the first fin active area, a second source/drain in the second fin active area, a first contact plug on the first source/drain, and a second contact plug on the second source/drain. The center of the second contact plug is offset from the center of the second source/drain.

6. 发明申请

US20170046116A1 ELECTRONIC DEVICE AND OPERATION METHOD THEREOF 审中-公开
标题翻译：电子设备及其操作方法
公开(公告)号：US20170046116A1
公开(公告)日：2017-02-16
申请号：US15230570
申请日：2016-08-08
申请人： Samsung Electronics Co., Ltd.
发明人： Hangyul KIM , Taemin CHO , Sungmin KIM , Min-Hee LEE , Yunjae LEE
IPC分类号： G06F3/16 , G06F3/0481 , G06F3/0488 , G06F3/0482
CPC分类号： G06F3/162 , G06F3/04817 , G06F3/04842 , G06F3/04883 , G06F3/165
摘要： A method for use in an electronic device, comprising: displaying a looper screen including a plurality of loop items; displaying, on the looper screen, a first shortcut item that is associated with one or more of the loop items; and reproducing a first music pattern associated with one or more loop items in response to a first selection of the first shortcut item.
摘要翻译：一种在电子设备中使用的方法，包括：显示包括多个循环项的触发器屏幕; 在操纵屏幕上显示与一个或多个循环项目相关联的第一快捷项目; 以及响应于所述第一快捷项目的第一选择，再现与一个或多个循环项相关联的第一音乐模式。

7. 发明申请

US20160321026A1 METHOD AND APPARATUS FOR CONTROLLING SOUND SIGNAL OUTPUT 审中-公开
标题翻译：用于控制声信号输出的方法和装置
公开(公告)号：US20160321026A1
公开(公告)日：2016-11-03
申请号：US15207597
申请日：2016-07-12
申请人： Samsung Electronics Co., Ltd.
发明人： Hyungjin KWON , Kwanhee HAN , Sungmin KIM
IPC分类号： G06F3/16 , G06F3/0482
摘要： A method and an apparatus control sound signal output. The method of controlling a sound signal output in a terminal includes: storing receiver identifications and corresponding sound signal control parameters associated with each other by the terminal; providing a receiver selection interface capable of selecting one from a list of the receiver identifications and the receiver identifications included in the list by the terminal; receiving one receiver identification through the receiver selection interface; converting a digital sound signal into an analog sound signal by applying a sound signal control parameter corresponding to the received receiver identification; and outputting the analog sound signal.
摘要翻译：方法和装置控制声音信号输出。控制在终端中输出的声音信号的方法包括：存储由终端相互关联的接收机标识和对应的声音信号控制参数; 提供接收机选择接口，其能够从所述终端中包括在所述列表中的所述接收机标识和所述接收机标识的列表中选择一个; 通过接收机选择接口接收一个接收机标识; 通过应用与接收到的接收机标识对应的声音信号控制参数将数字声音信号转换成模拟声音信号; 并输出模拟声音信号。

8. 发明公开

US20230163178A1 SEMICONDUCTOR DEVICES 审中-公开
公开(公告)号：US20230163178A1
公开(公告)日：2023-05-25
申请号：US17887600
申请日：2022-08-15
申请人： Samsung Electronics Co., Ltd.
发明人： Sungmin KIM
IPC分类号： H01L29/417 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/786 , H01L29/775 , H01L29/40 , H01L29/66
CPC分类号： H01L29/41733 , H01L29/0673 , H01L29/0847 , H01L29/42392 , H01L29/78696 , H01L29/775 , H01L29/401 , H01L29/66553 , H01L29/66545 , H01L29/66742 , H01L29/66439
摘要： A semiconductor device includes a buried interconnection line extending in a first direction, a gate electrode extending in a second direction intersecting the buried interconnection line, and channel layers spaced apart from each other in a third direction perpendicular to the first direction and the second direction. The channel layers are surrounded by the gate electrode, and the buried interconnection line includes a metal layer and a semiconductor layer stacked in the third direction. The device includes a buried insulating layer between the channel layers and the buried interconnection line, and first and second source/drain regions in contact with the channel layers on both sides of the gate electrode. The second source/drain region penetrates through the buried insulating layer and is in contact with the semiconductor layer. The device includes a contact plug on the first source/drain region, and a via below the buried interconnection line.

9. 发明申请

US20220342223A1 METHOD FOR IMPROVING ANTENNA PERFORMANCE IN ELECTRONIC DEVICE COMPRISING A PLURALITY OF ANTENNAS AND DEVICE THEREOF 有权
公开(公告)号：US20220342223A1
公开(公告)日：2022-10-27
申请号：US17861326
申请日：2022-07-11
申请人： Samsung Electronics Co., Ltd.
发明人： Sungkwang YANG , Sungmin KIM , Yeongmin PARK , Kyoungjin AHN , Byounguk YOON , Jongchul CHOI
IPC分类号： G02B27/01 , H01Q1/27
摘要： An electronic device according to an embodiment may include at least one display, a main frame to which the at least one display is mounted, a first support frame which is connected to the main frame through a first connector and includes a first antenna, a second support frame which is connected to the main frame through a second connector and includes a second antenna, at least one processor, and at least one sensor. The at least one processor may perform, when the at least one sensor detects that the electronic device is unfolded, wireless communication using the first antenna and the second antenna, and, when the at least one sensor detects that the electronic device is folded, may turn off the first antenna and/or the second antenna, connect first antenna and/or the second antenna to a ground, or shift a resonance frequency of first antenna and/or the second antenna.

10. 发明申请

US20220190136A1 SEMICONDUCTOR DEVICES 有权
公开(公告)号：US20220190136A1
公开(公告)日：2022-06-16
申请号：US17686504
申请日：2022-03-04
申请人： Samsung Electronics Co., Ltd.
发明人： Seungseok HA , Gukil AN , Keun Hwi CHO , Sungmin KIM
IPC分类号： H01L29/51 , H01L29/49 , H01L29/786 , H01L29/423
摘要： Semiconductor devices and methods of forming the same are provided. The semiconductor devices may include a substrate, a pair of semiconductor patterns adjacent to each other on the substrate, a gate electrode on the pair of semiconductor patterns, a source/drain pattern connected to the pair of semiconductor patterns, and a ferroelectric pattern on surfaces of the pair of semiconductor patterns. The surfaces of the pair of semiconductor patterns may face each other, and the ferroelectric pattern may define a first space between the pair of semiconductor patterns. The gate electrode may include a work function metal pattern that is in the first space.

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