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1. 发明公开

US20240243172A1 3D-STACKED TRANSISTOR STRUCTURE WITH BARRIER LAYER BETWEEN UPPER GATE STRUCTURE AND LOWER GATE STRUCTURE 审中-公开
公开(公告)号：US20240243172A1
公开(公告)日：2024-07-18
申请号：US18195150
申请日：2023-05-09
申请人： Samsung Electronics Co., Ltd.
发明人： Jaejik Baek , Seungchan Yun , Kang-ill Seo
IPC分类号： H01L29/06 , H01L21/8238 , H01L25/07 , H01L27/06 , H01L27/092 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/786
CPC分类号： H01L29/0673 , H01L21/823807 , H01L25/074 , H01L27/0688 , H01L27/092 , H01L29/42392 , H01L29/66439 , H01L29/775 , H01L29/78696
摘要： Provided is a three-dimensionally-stacked field-effect transistor (3DSFET) device including a plurality of 3DSFETs on a single substrate, wherein each of the 3DSFET includes: a 1st channel structure surrounded by a 1st gate structure; and a 2nd channel structure surrounded by a 2nd gate structure, the 2nd channel structure provided on the 1st channel structure, and wherein, in at least one of the 3DSFETs, the 1st gate structure is isolated from the 2nd gate structure through a barrier layer including a dielectric material comprising tantalum.

2. 发明授权

US11482619B2 Semiconductor devices 有权
公开(公告)号：US11482619B2
公开(公告)日：2022-10-25
申请号：US17026551
申请日：2020-09-21
申请人： Samsung Electronics Co., Ltd.
发明人： Donghwan Han , Seungchan Yun
IPC分类号： H01L29/78 , H01L27/092 , H01L27/12 , H01L21/8238 , H01L29/08
摘要： A semiconductor device includes a substrate including an active region that extends in a first direction; a gate structure that intersects the active region and that extends in a second direction; a source/drain region on the active region on at least one side of the gate structure; a contact plug on the source/drain region on the at least one side of the gate structure; and a contact insulating layer on sidewalls of the contact plug, wherein a lower end of the contact plug is closer to the substrate than a lower end of the source/drain region.

3. 发明公开

US20240096984A1 INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME 审中-公开
公开(公告)号：US20240096984A1
公开(公告)日：2024-03-21
申请号：US18160341
申请日：2023-01-27
申请人： Samsung Electronics Co., Ltd.
发明人： Jongjin Lee , Tae Sun Kim , Wonhyuk Hong , Seungchan Yun , Kang-Ill Seo
IPC分类号： H01L29/417 , H01L23/528 , H01L29/06 , H01L29/40 , H01L29/423 , H01L29/775
CPC分类号： H01L29/41766 , H01L23/5286 , H01L29/0673 , H01L29/401 , H01L29/42392 , H01L29/775
摘要： Integrated circuit devices and methods of forming the same are provided. The methods may include providing a substrate structure including a substrate, a bottom insulator and a semiconductor region between the substrate and the bottom insulator, the semiconductor region extending in a first direction; forming first and second preliminary transistor structures on the bottom insulator, wherein and the bottom insulator may include first and second portions that the first and second preliminary transistor structures respectively overlap, and a third portion between the first and second portions; replacing the third portion of the bottom insulator with a bottom semiconductor layer; forming a source/drain region between the first and second preliminary transistor structures; replacing the substrate and the semiconductor region with a backside insulator; forming a power contact in the backside insulator, wherein the source/drain region may overlap the power contact; and forming a power rail.

4. 发明申请

US20230049816A1 INTEGRATED CIRCUIT DEVICES INCLUDING A COMMON GATE ELECTRODE AND METHODS OF FORMING THE SAME 有权
公开(公告)号：US20230049816A1
公开(公告)日：2023-02-16
申请号：US17504755
申请日：2021-10-19
申请人： Samsung Electronics Co., Ltd.
发明人： SOOYOUNG PARK , Seunghyun Song , Byounghak Hong , Seungchan Yun
IPC分类号： H01L29/786 , H01L29/06 , H01L29/66
摘要： Integrated circuit devices and methods of forming the same are provided. Integrated circuit devices may include a first channel layer including a first surface, a second channel layer that is spaced apart from the first channel layer in a first direction and includes a second surface, a first gate electrode and a second gate electrode. The first surface and the second surface may be spaced apart from each other in the first direction and may face opposite directions. The first channel layer may be in the first gate electrode, and the first gate electrode may be absent from the first surface of the first channel layer. The second channel layer may be in the second gate electrode, and the second gate electrode may be absent from the second surface of the second channel layer.

5. 发明授权

US11563108B2 Semiconductor devices 有权
公开(公告)号：US11563108B2
公开(公告)日：2023-01-24
申请号：US17011444
申请日：2020-09-03
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Seungchan Yun , Donghwan Han
IPC分类号： H01L29/66 , H01L29/78 , H01L21/8234 , H01L21/84
摘要： A semiconductor device including: a first structure including: a first semiconductor pattern protruding from a substrate, the first semiconductor pattern being a channel; a first conductive pattern surrounding the first semiconductor pattern, the first conductive pattern being a gate electrode; a first impurity region under the first semiconductor pattern, the first impurity region contacting the first semiconductor pattern, the first impurity region being a source or drain region; and a second impurity region contacting the first semiconductor pattern, the second impurity region being the other of the source or drain region; and a second structure including: second semiconductor patterns spaced apart from each other, each of the second semiconductor patterns protruding from the substrate; second conductive patterns surrounding the second semiconductor patterns, respectively; and first contact plugs connected to the second conductive patterns, wherein the first structure is a vfet, and the second structure includes a resistor or a capacitor.

6. 发明申请

US20210159327A1 SEMICONDUCTOR DEVICES 有权
公开(公告)号：US20210159327A1
公开(公告)日：2021-05-27
申请号：US17011444
申请日：2020-09-03
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Seungchan Yun , Donghwan Han
IPC分类号： H01L29/66 , H01L29/78
摘要： A semiconductor device including: a first structure including: a first semiconductor pattern protruding from a substrate, the first semiconductor pattern being a channel; a first conductive pattern surrounding the first semiconductor pattern, the first conductive pattern being a gate electrode; a first impurity region under the first semiconductor pattern, the first impurity region contacting the first semiconductor pattern, the first impurity region being a source or drain region; and a second impurity region contacting the first semiconductor pattern, the second impurity region being the other of the source or drain region; and a second structure including:
second semiconductor patterns spaced apart from each other, each of the second semiconductor patterns protruding from the substrate; second conductive patterns surrounding the second semiconductor patterns, respectively; and first contact plugs connected to the second conductive patterns, wherein the first structure is a vfet, and the second structure includes a resistor or a capacitor.

7. 发明公开

US20230317824A1 SEMICONDUCTOR DEVICES 审中-公开
公开(公告)号：US20230317824A1
公开(公告)日：2023-10-05
申请号：US18329206
申请日：2023-06-05
申请人： Samsung Electronics Co., Ltd.
发明人： Seungchan Yun , Donghwan Han
IPC分类号： H01L29/66 , H01L29/10 , H01L29/78 , H01L29/423
CPC分类号： H01L29/6656 , H01L29/1033 , H01L29/42392 , H01L29/7851 , H01L29/7855 , H01L2029/7858
摘要： A semiconductor device including a substrate including first and second regions, a first transistor on the first region and including a first semiconductor pattern protruding from the first region; a first gate structure covering an upper surface and sidewall of the first semiconductor pattern; first source/drain layers on the first semiconductor pattern at opposite sides of the first gate structure, upper surfaces of the first source/drain layers being closer to the substrate than an uppermost surface of the first gate structure; and a second transistor on the second region and including a second semiconductor pattern protruding from the second region; a second gate structure covering a sidewall of the second semiconductor pattern; and a second source/drain layer under the second semiconductor pattern; and a third source/drain layer on the second semiconductor pattern, wherein the upper surface of the first region is lower than the upper surface of the second region.

8. 发明授权

US11670701B2 Semiconductor devices 有权
公开(公告)号：US11670701B2
公开(公告)日：2023-06-06
申请号：US17019767
申请日：2020-09-14
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Seungchan Yun , Donghwan Han
IPC分类号： H01L29/66 , H01L29/78 , H01L29/423 , H01L29/10
CPC分类号： H01L29/6656 , H01L29/1033 , H01L29/42392 , H01L29/7851 , H01L29/7855 , H01L2029/7858
摘要： A semiconductor device including a substrate including first and second regions, a first transistor on the first region and including a first semiconductor pattern protruding from the first region; a first gate structure covering an upper surface and sidewall of the first semiconductor pattern; first source/drain layers on the first semiconductor pattern at opposite sides of the first gate structure, upper surfaces of the first source/drain layers being closer to the substrate than an uppermost surface of the first gate structure; and a second transistor on the second region and including a second semiconductor pattern protruding from the second region; a second gate structure covering a sidewall of the second semiconductor pattern; and a second source/drain layer under the second semiconductor pattern; and a third source/drain layer on the second semiconductor pattern, wherein the upper surface of the first region is lower than the upper surface of the second region.

9. 发明公开

US20230163202A1 FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK SIDE POWER DISTRIBUTION NETWORK (BSPDN) 审中-公开
公开(公告)号：US20230163202A1
公开(公告)日：2023-05-25
申请号：US18094597
申请日：2023-01-09
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jaehong LEE , Seungchan Yun , Sooyoung Park , Kang-ill Seo
IPC分类号： H01L29/73 , H01L29/786 , H01L23/48 , H01L29/06 , H01L29/66
CPC分类号： H01L29/7302 , H01L29/78696 , H01L23/481 , H01L29/0673 , H01L29/66265
摘要： Provided is field-effect transistor structure including: a substrate including therein at least one 1st doped region, a 2nd doped region on one side of the 1st doped region, and a 3rd doped region on another side of the 1st doped region; a 1st channel structure including therein a 4th doped region on the 2nd doped region in the substrate; and a 2nd channel structure, at a side of the 1st channel structure, including therein a 5th doped region on the 3rd doped region in the substrate, wherein the 4th, 2nd, 1st, 3rd and 5th doped regions form a sequentially connected passive device.

10. 发明申请

US20230129233A1 SEMICONDUCTOR DEVICES 有权
公开(公告)号：US20230129233A1
公开(公告)日：2023-04-27
申请号：US18088550
申请日：2022-12-24
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Seungchan Yun , Donghwan Han
IPC分类号： H01L29/66 , H01L29/78
摘要： A semiconductor device including: a first structure including: a first semiconductor pattern protruding from a substrate, the first semiconductor pattern being a channel; a first conductive pattern surrounding the first semiconductor pattern, the first conductive pattern being a gate electrode; a first impurity region under the first semiconductor pattern, the first impurity region contacting the first semiconductor pattern, the first impurity region being a source or drain region; and a second impurity region contacting the first semiconductor pattern, the second impurity region being the other of the source or drain region; and a second structure including: second semiconductor patterns spaced apart from each other, each of the second semiconductor patterns protruding from the substrate; second conductive patterns surrounding the second semiconductor patterns, respectively; and first contact plugs connected to the second conductive patterns, wherein the first structure is a vfet, and the second structure includes a resistor or a capacitor.

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