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1. 发明授权

US09608163B2 Nano-structure semiconductor light emitting device 有权
公开(公告)号：US09608163B2
公开(公告)日：2017-03-28
申请号：US14165082
申请日：2014-01-27
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Nam Goo Cha , Bong Jin Kuh , Han Mei Choi
IPC分类号： H01L33/24 , H01L33/08 , H01L33/00 , H01L33/18 , H01L33/20 , B82Y20/00
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/005 , H01L33/08 , H01L33/18 , H01L33/20
摘要： A nano-structure semiconductor light emitting device includes a base layer formed of a first conductivity type semiconductor, and a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer. A plurality of nanocores is disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor. An active layer is disposed on surfaces of the plurality of nanocores and positioned above the first insulating layer. A second insulating layer is disposed on the first insulating layer and has a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores. A second conductivity-type semiconductor layer is disposed on the surface of the active layer positioned to be above the second insulating layer.

2. 发明授权

US09316789B2 Semiconductor devices and methods of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US09316789B2
公开(公告)日：2016-04-19
申请号：US14796523
申请日：2015-07-10
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Ki Chul Kim , Bong Jin Kuh , Jung Yun Won , Eun Ha Lee , Han Mei Choi
IPC分类号： G02F1/035 , G02B6/13 , G02B6/122 , G02B6/124 , G02B6/132 , G02F1/025 , H01L29/66 , G02B6/12
CPC分类号： G02B6/13 , G02B6/122 , G02B6/124 , G02B6/131 , G02B6/132 , G02B2006/12061 , G02B2006/121 , G02B2006/12107 , G02B2006/12147 , G02F1/025 , G02F1/035 , H01L29/66477
摘要： A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation .
摘要翻译：半导体器件包括单晶衬底，电子元件和光学元件。电元件设置在单晶衬底上。电气元件包括以晶体取向<110>延伸的栅极电极和与栅电极相邻的源极和漏极区域。源极区域和漏极区域布置在基本上垂直于栅电极延伸的方向的方向上。光学元件设置在单晶衬底上。光学元件包括以晶体取向<010>延伸的光波导。

3. 发明申请

US20140209858A1 NANO-STRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：纳米结构半导体发光器件
公开(公告)号：US20140209858A1
公开(公告)日：2014-07-31
申请号：US14165082
申请日：2014-01-27
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Nam Goo Cha , Bong Jin Kuh , Han Mei Choi
IPC分类号： H01L33/06 , H01L33/20
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/005 , H01L33/08 , H01L33/18 , H01L33/20
摘要： A nano-structure semiconductor light emitting device includes a base layer formed of a first conductivity type semiconductor, and a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer. A plurality of nanocores is disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor. An active layer is disposed on surfaces of the plurality of nanocores and positioned above the first insulating layer. A second insulating layer is disposed on the first insulating layer and has a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores. A second conductivity-type semiconductor layer is disposed on the surface of the active layer positioned to be above the second insulating layer.
摘要翻译：纳米结构半导体发光器件包括由第一导电型半导体形成的基极层和设置在基底层上的第一绝缘层，并且具有暴露基底层的部分区域的多个第一开口。多个纳米孔设置在基层的露出区域中并由第一导电型半导体形成。有源层设置在多个纳米孔的表面上并且位于第一绝缘层的上方。第二绝缘层设置在第一绝缘层上，并且具有围绕多个纳米孔的多个第二开口和设置在多个纳米孔表面上的有源层。第二导电型半导体层设置在位于第二绝缘层上方的有源层的表面上。

4. 发明申请

US20230116342A1 SEMICONDUCTOR DEVICES 有权
公开(公告)号：US20230116342A1
公开(公告)日：2023-04-13
申请号：US17829781
申请日：2022-06-01
申请人： Samsung Electronics Co., Ltd.
发明人： Won Hee Choi , Sung Uk Jang , Dong Suk Shin , Bong Jin Kuh , Kong Soo Lee
IPC分类号： H01L29/78 , H01L29/06 , H01L29/786 , H01L29/423 , H01L27/108
摘要： A semiconductor device is provided. A semiconductor device includes: a first active pattern spaced apart from a substrate and extending in a first direction; a second active pattern spaced apart further from the substrate than the first active pattern and extending in the first direction; a gate structure on the substrate, the gate structure extending in a second direction crossing the first direction and penetrating the first active pattern and the second active pattern; a first source/drain region on at least one side surface of the gate structure and connected to the first active pattern; a second source/drain region on at least one side surface of the gate structure and connected to the second active pattern; and a buffer layer between the substrate and the first active pattern, the buffer layer containing germanium.

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