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1. 发明申请

US20020067106A1 Film bulk acoustic resonator and method for fabrication thereof 失效
标题翻译：薄膜体声波谐振器及其制造方法
公开(公告)号：US20020067106A1
公开(公告)日：2002-06-06
申请号：US09983639
申请日：2001-10-25
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Kuk Hyun Sunwoo , Hyoung Jun Kim , Jae Wook Jang
IPC分类号： H01L041/04
CPC分类号： H03H3/02 , H03H9/173 , H03H2003/021 , Y10T29/42
摘要： The present invention provides a robust FBAR device and a simplified method of fabricating a FBAR device. FBAR device according to the present invention includes a membrane supporting layer between a substrate and a membrane layer, surrounding an air gap region. The membrane supporting layer supports the membrane layer to obtain a robust structure. Firstly, the method forms a sacrificial layer on the substrate, then a photoresist pattern is formed on air gap forming region at a top surface of the sacrificial layer, the method removes the sacrificial layer to form a sacrificial pattern by using the photoresist pattern as an etching mask. An insulating material then deposits on the substrate, the photoresist pattern is remove, and a membrane layer is formed on a top surface of the sacrificial layer and the insulating material layer. Finally, the method removes the sacrificial pattern to form an air gap.
摘要翻译：本发明提供了一种鲁棒的FBAR装置和一种制造FBAR装置的简化方法。根据本发明的FBAR装置包括在基板和膜层之间的膜支撑层，围绕气隙区域。膜支撑层支撑膜层以获得坚固的结构。首先，该方法在衬底上形成牺牲层，然后在牺牲层的顶表面上的气隙形成区域上形成光致抗蚀剂图案，该方法通过使用光致抗蚀剂图案作为牺牲层去除牺牲层以形成牺牲图案蚀刻掩模然后将绝缘材料沉积在基板上，去除光致抗蚀剂图案，并且在牺牲层和绝缘材料层的顶表面上形成膜层。最后，该方法去除牺牲图案以形成气隙。

2. 发明申请

US20030193269A1 Film bulk acoustic resonator and method of forming the same 有权
标题翻译：薄膜体声波谐振器及其形成方法
公开(公告)号：US20030193269A1
公开(公告)日：2003-10-16
申请号：US10320361
申请日：2002-12-17
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Jae Wook Jang , Kuk Hyun Sunwoo
IPC分类号： H01L041/08
CPC分类号： H03H9/173 , H03H3/04 , H03H2003/021 , H03H2003/0442
摘要： A film bulk acoustic resonator (FBAR) includes an insulation layer on a substrate to prevent a signal from being transmitted to a substrate. The FBAR includes a portion of a membrane layer corresponding to an activation area to adjust a resonance frequency band and improve a transmission gain of the resonance frequency band, the portion of the membrane layer being partially etched to have a thickness less than the other portion of the membrane layer. A method of forming the FBAR includes forming an sacrificing layer made of polysilicon, forming an air gap using a dry etching process, and forming a via hole. The method prevents structural problems occurred in a conventional air gap forming process and provides locations and the number of the via holes to be controlled.
摘要翻译：薄膜体声波谐振器（FBAR）包括在基板上的绝缘层，以防止信号被传输到基板。 FBAR包括对应于激活区域的膜层的一部分，以调节共振频带并提高共振频带的透射增益，膜层的部分被部分蚀刻以具有小于另一部分的厚度膜层。形成FBAR的方法包括形成由多晶硅制成的牺牲层，使用干蚀刻工艺形成气隙，并形成通孔。该方法防止了在常规气隙形成过程中发生的结构问题，并提供要控制的通孔的位置和数量。

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