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    • 4. 发明申请
    • METHOD OF MANUFACTURING DEPOSITION MASK
    • 制备沉积掩模的方法
    • US20160160339A1
    • 2016-06-09
    • US14795253
    • 2015-07-09
    • Samsung Display Co., Ltd.
    • Jeongwon Han
    • C23C14/04G03F7/40G03F7/34G03F7/32G03F7/16G03F7/20
    • C23C14/042G03F7/16G03F7/164G03F7/2022G03F7/32G03F7/34G03F7/40
    • A method of manufacturing a deposition mask is disclosed. In one aspect, the method includes depositing a first photoresist layer on a substrate, aligning a first photomask over the first photoresist layer and developing the first photoresist layer to form a plurality of first photoresist patterns having sides that gradually narrow toward the substrate. The method also includes forming a metal layer over the first photoresist patterns and a portion of the substrate exposed by the first photoresist patterns, depositing a second photoresist layer over the metal layer and aligning a second photomask over the second photoresist layer and developing the second photoresist layer to form a plurality of second photoresist patterns between the first photoresist patterns. The method further includes etching the metal layer to form a pattern hole, removing the first and second photoresist patterns and separating the substrate so as to form a deposition mask.
    • 公开了一种制造沉积掩模的方法。 一方面,该方法包括在衬底上沉积第一光致抗蚀剂层,将第一光掩模对准第一光致抗蚀剂层上的第一光掩模,并使第一光致抗蚀剂层显影,以形成具有朝向衬底逐渐变窄的侧面的多个第一光致抗蚀剂图案。 该方法还包括在第一光致抗蚀剂图案上形成金属层和由第一光致抗蚀剂图案曝光的基板的一部分,在金属层上沉积第二光致抗蚀剂层并使第二光掩模对准在第二光致抗蚀剂层上并显影第二光致抗蚀剂 以在第一光致抗蚀剂图案之间形成多个第二光致抗蚀剂图案。 该方法还包括蚀刻金属层以形成图案孔,去除第一和第二光致抗蚀剂图案并分离衬底以形成沉积掩模。