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1. 发明授权

US12104032B2 Coating composition, display device including coating layer, and manufacturing method of display device 有权
公开(公告)号：US12104032B2
公开(公告)日：2024-10-01
申请号：US17533016
申请日：2021-11-22
申请人： Samsung Display Co., LTD. , NIC LAB Co., LTD.
发明人： Su-Hyoung Kang , Min Hyuck Kang , Yun Ho Kim , Jae Sung Kim , Jeong Eun Kim
IPC分类号： C08J7/046 , C09D7/40 , C09D7/63 , C09D7/65 , C09D127/12 , C09D183/00 , G02B1/14 , B82Y40/00
CPC分类号： C08J7/046 , C09D7/63 , C09D7/65 , C09D7/67 , C09D127/12 , C09D183/00 , G02B1/14 , B82Y40/00
摘要： A coating composition includes a compound of Chemical Formula 1:

wherein the groups are described herein.

2. 发明授权

US10680114B2 Thin film transistor, method of manufacturing the same and liquid crystal display apparatus having the same 有权
公开(公告)号：US10680114B2
公开(公告)日：2020-06-09
申请号：US15071182
申请日：2016-03-15
申请人： Samsung Display Co., Ltd.
发明人： Su-Hyoung Kang , Hyun-Gue Kim , Jong-Jun Baek
IPC分类号： H01L29/786 , H01L29/66 , H01L21/02 , H01L27/12 , G02F1/1343
摘要： A thin film transistor includes a substrate, a gate electrode disposed on the substrate, an active pattern disposed on the gate electrode, a source electrode electrically coupled to the active pattern and a drain electrode electrically coupled to the active pattern. The active pattern includes a first channel layer overlapping the source electrode and the drain electrode and a second channel layer overlapping the gate electrode. The second channel layer includes a plurality of high electron mobility regions. An electron mobility of each of the high electron mobility regions is greater than an electron mobility of the first channel layer.

3. 发明授权

US09882056B2 Thin film transistor and method of manufacturing the same 有权
公开(公告)号：US09882056B2
公开(公告)日：2018-01-30
申请号：US14939564
申请日：2015-11-12
申请人： Samsung Display Co., Ltd.
发明人： Yong-Su Lee , Yoon-Ho Khang , Se-Hwan Yu , Su-Hyoung Kang
IPC分类号： H01L29/786 , H01L29/43 , H01L29/66 , H01L29/417 , H01L29/45
CPC分类号： H01L29/78642 , H01L29/41733 , H01L29/41741 , H01L29/41775 , H01L29/45 , H01L29/66666 , H01L29/6675 , H01L29/78606 , H01L29/7869
摘要： A thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer, a source electrode, a drain electrode and a graphene pattern. The semiconductor layer overlaps with the gate electrode. The gate insulating layer is disposed between the gate electrode and the semiconductor layer. The source electrode overlaps with the semiconductor layer. The drain electrode overlaps with the semiconductor layer. The drain electrode is spaced apart from the source electrode. The graphene pattern is disposed between the semiconductor layer and at least one of the source electrode and the drain electrode.

4. 发明授权

US08963154B2 Thin film transistor substrate and method of manufacturing the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08963154B2
公开(公告)日：2015-02-24
申请号：US13755730
申请日：2013-01-31
申请人： Samsung Display Co., Ltd.
发明人： Sang-Ho Park , Su-Hyoung Kang , Dong-Hwan Shim , Yoon-Ho Khang , Se-Hwan Yu , Min-Jung Lee , Yong-Su Lee
IPC分类号： H01L29/04 , H01L29/10 , H01L29/786 , H01L29/66
CPC分类号： H01L27/127 , H01L21/28008 , H01L27/124 , H01L27/1262 , H01L29/66742 , H01L29/66757 , H01L29/786 , H01L29/78633 , H01L29/7869
摘要： A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.
摘要翻译：薄膜晶体管基板包括基底基板，设置在基底基板上的有源图案，设置在有源图案上的栅极绝缘图案，设置在栅极绝缘图案上并与沟道重叠的栅电极，以及布置的阻光图案在基底基板和活性图案之间并且具有大于活性图案的尺寸。有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。

5. 发明授权

US09268170B2 Array substrate and method of manufacturing the same 有权
标题翻译：阵列基板及其制造方法
公开(公告)号：US09268170B2
公开(公告)日：2016-02-23
申请号：US14456675
申请日：2014-08-11
申请人： Samsung Display Co., Ltd.
发明人： Byung-Duk Yang , Eun-Guk Lee , Se-Hwan Yu , Kyoung-Tai Han , Su-Hyoung Kang , Kyung-Sook Jeon
IPC分类号： H01L27/12 , G02F1/1335 , H01L29/786
CPC分类号： G02F1/133516 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/78633
摘要： An array substrate includes; a substrate, a gate line and a data line disposed on the substrate, a thin film transistor (“TFT”) electrically connected to the gate line and the data line, a light blocking member disposed on the substrate and a first color filter and a second color filter disposed on the substrate. The light blocking member covers a portion of the first color filter and the second color filter covers a portion of the light blocking member.
摘要翻译：阵列基板包括：设置在基板上的基板，栅极线和数据线，与栅极线和数据线电连接的薄膜晶体管（“TFT”），设置在基板上的遮光部件和第一滤色器以及第二滤色器设置在基板上。遮光构件覆盖第一滤色器的一部分，并且第二滤色器覆盖遮光构件的一部分。

6. 发明授权

US09252284B2 Display substrate and method of manufacturing a display substrate 有权
标题翻译：显示基板和显示基板的制造方法
公开(公告)号：US09252284B2
公开(公告)日：2016-02-02
申请号：US14182989
申请日：2014-02-18
申请人： Samsung Display Co., Ltd.
发明人： Jong-Chan Lee , Yoon-Ho Khang , Su-Hyoung Kang , Dong-Jo Kim , Ji-Seon Lee , Myoung-Geun Cha , Deuk-Myung Ji
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/78693
摘要： A display substrate and a method for manufacturing a display substrate are disclosed. In the method, a gate electrode is formed on a base substrate. An active pattern is formed using an oxide semiconductor. The active pattern partially overlaps the gate electrode. A first insulation layer pattern and a second insulation layer pattern are sequentially formed on the active pattern. The first insulation layer pattern and the second insulation layer pattern overlap the gate electrode. A third insulation layer is formed to cover the active pattern, the first insulation layer pattern and the second insulation layer pattern. Either the first insulation layer pattern or the second insulation layer pattern includes aluminum oxide. Forming the first insulation layer pattern and the second insulation layer pattern includes performing a backside exposure process using the gate electrode as an exposure mask.
摘要翻译：公开了显示基板和显示基板的制造方法。在该方法中，在基底基板上形成栅电极。使用氧化物半导体形成有源图案。有源图案部分地与栅电极重叠。在活性图案上依次形成第一绝缘层图案和第二绝缘层图案。第一绝缘层图案和第二绝缘层图案与栅电极重叠。形成第三绝缘层以覆盖有源图案，第一绝缘层图案和第二绝缘层图案。第一绝缘层图案或第二绝缘层图案都包括氧化铝。形成第一绝缘层图案和第二绝缘层图案包括使用栅电极进行背面曝光处理作为曝光掩模。

7. 发明申请

US20150102336A1 FIELD RELAXATION THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS INCLUDING THE TRANSISTOR 审中-公开
标题翻译：场松弛薄膜晶体管，其制造方法和包括晶体管的显示装置
公开(公告)号：US20150102336A1
公开(公告)日：2015-04-16
申请号：US14195806
申请日：2014-03-03
申请人： Samsung Display Co., Ltd.
发明人： Su-Hyoung Kang , Seung-Hwan Cho , Yoon-Ho Khang , Jong-Chan Lee
IPC分类号： H01L27/12 , H01L29/786 , H01L29/66
CPC分类号： H01L27/124 , H01L27/1225 , H01L27/3248 , H01L29/66969 , H01L29/78645 , H01L29/7869
摘要： A thin film transistor includes a semiconductor pattern formed on a substrate, the semiconductor pattern being formed of an oxide semiconductor and including a source area, a drain area, and an intermediate area that is formed between the source area and the drain area and includes a plurality of first areas and a second area having higher conductivity than the first areas; a first insulating pattern formed to cover at least the first areas; a second insulating film formed to face the second area, the source area and the drain area; a gate electrode formed on the semiconductor pattern and insulated from the semiconductor pattern by the first insulating pattern and the second insulating film; and source and drain electrodes insulated from the gate electrode and being in contact with the source area and the drain area.
摘要翻译：薄膜晶体管包括形成在基板上的半导体图案，所述半导体图案由氧化物半导体形成并且包括源极区域，漏极区域和形成在源极区域和漏极区域之间的中间区域，并且包括多个第一区域和具有比第一区域更高的导电性的第二区域; 形成为至少覆盖所述第一区域的第一绝缘图案; 形成为面对所述第二区域，所述源极区域和所述漏极区域的第二绝缘膜; 形成在所述半导体图案上并通过所述第一绝缘图案和所述第二绝缘膜与所述半导体图案绝缘的栅电极; 以及与栅电极绝缘并与源极区域和漏极区域接触的源极和漏极电极。

8. 发明申请

US20150060843A1 DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE 有权
标题翻译：显示基板及制造显示基板的方法
公开(公告)号：US20150060843A1
公开(公告)日：2015-03-05
申请号：US14182989
申请日：2014-02-18
申请人： Samsung Display Co., Ltd.
发明人： Jong-Chan LEE , Yoon-Ho Khang , Su-Hyoung Kang , Dong-Jo Kim , Ji-Seon Lee , Myoung-Geun Cha , Deuk-Myung Ji
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/78693
摘要： A display substrate and a method for manufacturing a display substrate are disclosed. In the method, a gate electrode is formed on a base substrate. An active pattern is formed using an oxide semiconductor. The active pattern partially overlaps the gate electrode. A first insulation layer pattern and a second insulation layer pattern are sequentially formed on the active pattern. The first insulation layer pattern and the second insulation layer pattern overlap the gate electrode. A third insulation layer is formed to cover the active pattern, the first insulation layer pattern and the second insulation layer pattern. Either the first insulation layer pattern or the second insulation layer pattern includes aluminum oxide. Forming the first insulation layer pattern and the second insulation layer pattern includes performing a backside exposure process using the gate electrode as an exposure mask.
摘要翻译：公开了显示基板和显示基板的制造方法。在该方法中，在基底基板上形成栅电极。使用氧化物半导体形成有源图案。有源图案部分地与栅电极重叠。在活性图案上依次形成第一绝缘层图案和第二绝缘层图案。第一绝缘层图案和第二绝缘层图案与栅电极重叠。形成第三绝缘层以覆盖有源图案，第一绝缘层图案和第二绝缘层图案。第一绝缘层图案或第二绝缘层图案都包括氧化铝。形成第一绝缘层图案和第二绝缘层图案包括使用栅电极进行背面曝光处理作为曝光掩模。

9. 发明申请

US20140151683A1 THIN FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管
公开(公告)号：US20140151683A1
公开(公告)日：2014-06-05
申请号：US13873426
申请日：2013-04-30
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Sang Ho Park , Su-Hyoung Kang , Yoon Ho Khang , Dong Jo Kim , Joon Yong Park , Sang Won Shin , Dong Hwan Shim
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： A thin film transistor includes an oxide semiconductor, in which an oxygen defect content of the oxide semiconductor is no greater than about 0.15 based on an entire oxygen content included in the oxide semiconductor.
摘要翻译：薄膜晶体管包括氧化物半导体，其中氧化物半导体的氧缺陷含量基于氧化物半导体中包含的全部氧含量不大于约0.15。

10. 发明授权

US11937493B2 Display device 有权
公开(公告)号：US11937493B2
公开(公告)日：2024-03-19
申请号：US17159854
申请日：2021-01-27
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Joohyeon Lee , Jeoungsub Lee , Heonjung Shin , Taehyeog Jung , Hyun Joon Oh , Minhyuck Kang , Su-Hyoung Kang , Jeongeun Kim
IPC分类号： H10K77/10 , B32B7/022 , B32B7/12 , B32B23/08 , B32B23/20 , B32B27/08 , B32B27/28 , B32B27/30 , B32B27/34 , B32B27/36 , B32B27/40 , B60K35/00 , G06F1/16 , G09F9/30 , H04M1/02 , H10K50/842 , H10K50/844 , H10K59/12 , H10K59/124 , H10K59/126 , H10K59/40 , H10K102/00
CPC分类号： H10K77/111 , B32B7/022 , B32B7/12 , B32B23/08 , B32B23/20 , B32B27/08 , B32B27/281 , B32B27/283 , B32B27/285 , B32B27/308 , B32B27/34 , B32B27/36 , B32B27/365 , B32B27/40 , H04M1/0268 , H10K59/12 , H10K59/40 , B32B2307/51 , B32B2457/20 , H10K2102/311
摘要： Disclosed is a display device including a display module that has at least one folding area, a first film disposed on the display module and having a first modulus, a second film disposed on the first film, being farther from the display module than the first film, and having a second modulus less than the first modulus, and a third film disposed on the second film, being farther from the display module than the second film, and having a third modulus less than the second modulus. The third modulus is equal to or less than about one-sixth of the first modulus.

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