专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07460231B2 Alignment tool for a lithographic apparatus 失效
标题翻译：光刻设备对准工具
公开(公告)号：US07460231B2
公开(公告)日：2008-12-02
申请号：US11389494
申请日：2006-03-27
申请人： Sami Musa , Richard Johannes Franciscus Van Haren , Maurits Van Der Schaar
发明人： Sami Musa , Richard Johannes Franciscus Van Haren , Maurits Van Der Schaar
IPC分类号： G01B11/00
CPC分类号： G03F9/7049 , G03F9/7015 , G03F9/7088
摘要： An alignment tool for a lithographic apparatus illuminates an alignment mark on a substrate with an alignment beam and measures the reflected spectrum. The reflected spectrum is compared with a reference mark to determine any misalignment. A blazed sub-wavelength grating is used to deflect the sub-beams created by diffracting the alignment beam from the alignment mark onto the reference mark.
摘要翻译：用于光刻设备的对准工具用对准光照射衬底上的对准标记并测量反射光谱。将反射光谱与参考标记进行比较，以确定任何未对准。使用闪耀的亚波长光栅来将通过将对准光束从对准标记衍射衍射到参考标记而产生的子光束偏转。

2. 发明授权

US08203692B2 Sub-segmented alignment mark arrangement 有权
标题翻译：分段对准标记布置
公开(公告)号：US08203692B2
公开(公告)日：2012-06-19
申请号：US12482770
申请日：2009-06-11
申请人： Sami Musa , Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing
发明人： Sami Musa , Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing
IPC分类号： G03B27/68 , G03B27/42
CPC分类号： G03B27/54 , G03F9/7076 , H01L23/544 , H01L2223/54466 , H01L2924/0002 , H01L2924/00
摘要： An alignment mark on a substrate includes a periodic structure of a plurality of first elements and a plurality of second elements. The elements are arranged in an alternating repetitive sequence in a first direction. An overall pitch of the periodic structure is equal to a sum of a width of the first element and a width of the second element in the first direction. Each first element has a first periodic sub-structure with a first sub-pitch and each second element has a second periodic sub-structure with second sub-pitch. An optical property of the first element for interaction with a beam of radiation having a wavelength λ is different from the optical property of the second element. The overall pitch is larger than the wavelength λ, and each of the first and the second sub-pitch is smaller than the wavelength.
摘要翻译：衬底上的对准标记包括多个第一元件和多个第二元件的周期性结构。元件沿第一方向以交替的重复序列排列。周期性结构的整体间距等于第一元件的宽度和第二元件在第一方向上的宽度之和。每个第一元件具有具有第一子间距的第一周期性子结构，并且每个第二元件具有具有第二子间距的第二周期性子结构。用于与具有波长λ的辐射束相互作用的第一元件的光学性质不同于第二元件的光学性质。总间距大于波长λ，第一和第二子间距都小于波长。

3. 发明授权

US07863763B2 Binary sinusoidal sub-wavelength gratings as alignment marks 有权
标题翻译：二进正弦亚波长光栅作为对准标记
公开(公告)号：US07863763B2
公开(公告)日：2011-01-04
申请号：US11284407
申请日：2005-11-22
申请人： Richard Johannes Franciscus Van Haren , Sami Musa
发明人： Richard Johannes Franciscus Van Haren , Sami Musa
IPC分类号： H01L23/544
CPC分类号： G03F9/7049 , G03F9/7076 , G03F9/7088
摘要： The present invention relates to alignment marks for use on substrates, the alignment marks consisting of periodic 2-dimensional arrays of structures, the spacing of the structures being smaller than an alignment beam but larger than an exposure beam and the width of the structures varying sinusoidally from one end of an array to the other.
摘要翻译：本发明涉及在基板上使用的对准标记，对准标记由周期性二维结构阵列组成，其结构的间距小于对准光束但大于曝光光束，并且结构的宽度正弦变化从阵列的一端到另一端。

4. 发明申请

US20110273685A1 PRODUCTION OF AN ALIGNMENT MARK 审中-公开
标题翻译：生产对齐标志
公开(公告)号：US20110273685A1
公开(公告)日：2011-11-10
申请号：US13075980
申请日：2011-03-30
申请人： Chung-Hsun LI , Richard Johannes Franciscus Van Haren , Sami Musa , David Deckers , Shun-Der Wu
发明人： Chung-Hsun LI , Richard Johannes Franciscus Van Haren , Sami Musa , David Deckers , Shun-Der Wu
IPC分类号： G03B27/42
CPC分类号： G03B21/26 , G03B27/42 , G03B27/54 , G03B27/58 , G03F9/708
摘要： A method of production of alignment marks uses a self-aligned double patterning process. An alignment mark pattern is provided with first and second sub-segmented elements. After selecting the dipolar illumination orientation, dipole-X is used to illuminate the pattern and to image the first elements on the wafer, but not the second elements. Alternatively, dipole-Y is used to illuminate the pattern and to image the second elements on the wafer, but not the first elements. In either case, self-aligned double patterning processing may then be performed to produce product-like alignment marks with high contrast and wafer quality (WQ). Subsequently the X and Y alignment marks thus produced are used for the step of alignment in a lithographic process.
摘要翻译：生产对准标记的方法使用自对准双重图案化工艺。对准标记图案设置有第一和第二子分段元件。在选择偶极照明方向之后，使用偶极子-X来照亮图案并对晶片上的第一元件进行成像，而不是第二元件。或者，使用偶极子Y来照亮图案并对晶片上的第二元件进行成像，而不是第一元件。在任一情况下，可以执行自对准双图案处理以产生具有高对比度和晶片质量（WQ）的类似产品的对准标记。随后，由此产生的X和Y对准标记用于光刻工艺中的对准步骤。

5. 发明授权

US07944063B2 Application of 2-dimensional photonic crystals in alignment devices 有权
标题翻译：二维光子晶体在对准装置中的应用
公开(公告)号：US07944063B2
公开(公告)日：2011-05-17
申请号：US11444532
申请日：2006-06-01
申请人： Richard Johannes Franciscus Van Haren , Sami Musa
发明人： Richard Johannes Franciscus Van Haren , Sami Musa
IPC分类号： H01L23/544 , H01L21/76 , G03F1/00
CPC分类号： H01L23/544 , G03F9/7076 , H01L2924/0002 , Y10S977/773 , H01L2924/00
摘要： Alignment marks for use on substrates. In one example, the alignment marks consist of periodic 2-dimensional arrays of structures, the spacing of the structures being smaller than an alignment beam but larger than an exposure beam.
摘要翻译：用于基板的对准标记。在一个示例中，对准标记由周期性的二维结构阵列组成，结构的间距小于对准光束但大于曝光光束。

6. 发明授权

US07737566B2 Alignment devices and methods for providing phase depth control 有权
标题翻译：对准装置和提供相位深度控制的方法
公开(公告)号：US07737566B2
公开(公告)日：2010-06-15
申请号：US11606374
申请日：2006-11-30
申请人： Richard Johannes Franciscus Van Haren , Sami Musa
发明人： Richard Johannes Franciscus Van Haren , Sami Musa
IPC分类号： H01L23/544 , H01L21/76 , G01F1/00
CPC分类号： G03F9/7076
摘要： Alignment marks for use on substrates. An exemplary implementation provides phase depth control. A grating mark, for example, can be etched on a silicon wafer with sub-wavelength segmentation in the spacing portion of the alignment grating's period. The sub-wavelength segmentation can be applied to the spaces or to the lines, or both, of an alignment grating to control the phase depth of the grating. By applying segmentation with a period smaller than the alignment light wavelength in either the space(s) and/or in the line(s) of the grating, the effective refractive index in that region can be manipulated. This change in the effective index will result in a change in the phase depth (optical path length). By varying the duty cycle of the sub-wavelength segmented region, the effective refractive index can be controlled, thereby providing selective control over the phase depth.
摘要翻译：用于基板的对准标记。示例性实施例提供相位深度控制。例如，可以在对准光栅周期的间隔部分中的亚波长分割的硅晶片上蚀刻光栅标记。亚波长分割可以应用于对准光栅的空间或线或两者，以控制光栅的相位深度。通过在光栅的空间和/或线中以比对准光波长小的周期进行分割，可以操纵该区域中的有效折射率。有效指标的变化将导致相位深度（光程长度）的变化。通过改变亚波长分割区域的占空比，可以控制有效折射率，从而提供对相位深度的选择性控制。

7. 发明申请

US20090310113A1 SUB-SEGMENTED ALIGNMENT MARK ARRANGEMENT 有权
标题翻译：分标签对齐标记安排
公开(公告)号：US20090310113A1
公开(公告)日：2009-12-17
申请号：US12482770
申请日：2009-06-11
申请人： Sami Musa , Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing
发明人： Sami Musa , Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing
IPC分类号： G03B27/54 , H01L23/544
CPC分类号： G03B27/54 , G03F9/7076 , H01L23/544 , H01L2223/54466 , H01L2924/0002 , H01L2924/00
摘要： An alignment mark on a substrate includes a periodic structure of a plurality of first elements and a plurality of second elements. The elements are arranged in an alternating repetitive sequence in a first direction. An overall pitch of the periodic structure is equal to a sum of a width of the first element and a width of the second element in the first direction. Each first element has a first periodic sub-structure with a first sub-pitch and each second element has a second periodic sub-structure with second sub-pitch. An optical property of the first element for interaction with a beam of radiation having a wavelength λ is different from the optical property of the second element. The overall pitch is larger than the wavelength λ, and each of the first and the second sub-pitch is smaller than the wavelength.
摘要翻译：衬底上的对准标记包括多个第一元件和多个第二元件的周期性结构。元件沿第一方向以交替的重复序列排列。周期性结构的整体间距等于第一元件的宽度和第二元件在第一方向上的宽度之和。每个第一元件具有具有第一子间距的第一周期性子结构，并且每个第二元件具有具有第二子间距的第二周期性子结构。用于与具有波长λ的辐射束相互作用的第一元件的光学性质不同于第二元件的光学性质。总间距大于波长λ，第一和第二子间距都小于波长。

8. 发明申请

US20130070226A1 MARKER STRUCTURE AND METHOD OF FORMING THE SAME 审中-公开
公开(公告)号：US20130070226A1
公开(公告)日：2013-03-21
申请号：US13678343
申请日：2012-11-15
申请人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
发明人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
IPC分类号： G03F9/00 , G03F7/20
CPC分类号： G03F9/7065 , G03F7/20 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10T428/24909
摘要： The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.

9. 发明授权

US08319967B2 Marker structure and method of forming the same 失效
标题翻译：标记结构及其形成方法
公开(公告)号：US08319967B2
公开(公告)日：2012-11-27
申请号：US12328167
申请日：2008-12-04
申请人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
发明人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
IPC分类号： G01B11/00 , G03B27/54 , G03B27/42
CPC分类号： G03F9/7065 , G03F7/20 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10T428/24909
摘要： The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.
摘要翻译：本发明涉及一种用于基板的光学取向并在其上提供的标记结构。标记结构具有第一水平的第一反射表面和第二水平的第二反射表面。第一级和第二级之间的间隔确定相位深度条件。标记结构还具有另外的结构。布置该附加结构以在标记结构的制造期间改变分离。本发明还涉及形成这种标记结构的方法。

10. 发明授权

US08072615B2 Alignment method, alignment system, and product with alignment mark 有权
标题翻译：对准方法，对准系统和带有对准标记的产品
公开(公告)号：US08072615B2
公开(公告)日：2011-12-06
申请号：US12332953
申请日：2008-12-11
申请人： Sami Musa , Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Xiuhong Wei
发明人： Sami Musa , Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Xiuhong Wei
IPC分类号： G01B11/14 , G01B11/00 , G03F1/00 , G03F7/00 , H01L21/00
CPC分类号： G03F9/7076
摘要： The position of a product is measured using an alignment mark on the product. Radiation is transmitted towards the alignment mark and diffracted by a pattern in the alignment mark. Position information is determined from phase relations of the diffracted radiation. The alignment mark comprises a set of mutually parallel conductor tracks from which the diffracted radiation is collected, the pattern being defined by a pattern of variation of the pitch between successive tracks as a function of position along the surface of the product. Thus, for example the pattern comprises alternating first and second areas wherein the pitch has a first and second value, respectively. Because the tracks in the different parts of the pattern, such as the first and second areas, are parallel to each other improved measurements are possible.
摘要翻译：使用产品上的对准标记测量产品的位置。辐射被朝向对准标记传送并被对准标记中的图案衍射。位置信息由衍射辐射的相位关系确定。对准标记包括一组相互平行的导体轨道，衍射辐射从该轨迹收集起来，该图案是通过沿着产品表面的位置的函数的连续迹线之间的间距的变化模式来限定的。因此，例如，图案包括交替的第一和第二区域，其中间距分别具有第一和第二值。因为图案的不同部分中的轨迹（例如第一和第二区域）彼此平行，所以改进的测量是可能的。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式