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1. 发明授权

US07582970B2 Carbon containing silicon oxide film having high ashing tolerance and adhesion 失效
标题翻译：含碳氧化硅膜具有高的灰化耐受性和粘附性
公开(公告)号：US07582970B2
公开(公告)日：2009-09-01
申请号：US12180652
申请日：2008-07-28
申请人： Sadayuki Ohnishi , Kouichi Owto , Tatsuya Usami , Noboru Morita , Kouji Arita , Ryouhei Kitao , Youichi Sasaki
发明人： Sadayuki Ohnishi , Kouichi Owto , Tatsuya Usami , Noboru Morita , Kouji Arita , Ryouhei Kitao , Youichi Sasaki
IPC分类号： H01L23/48
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02137 , H01L21/02211 , H01L21/02274 , H01L21/02282 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31633 , H01L21/76801 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an interlayer insulating film formed on or over a semiconductor substrate. An opening is formed in the interlayer insulating film and reaches a lower layer metal wiring conductor. A metal plug is formed by filling the opening with Cu containing metal via a barrier metal. The interlayer insulating film includes the insulating film which includes a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond in the carbon containing silicon oxide film. The proportion of Si—CH2 bond (1360 cm-1) to Si—CH3 bond (1270 cm-1) in the insulating film is in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum.
摘要翻译：半导体器件包括形成在半导体衬底上或之上的层间绝缘膜。在层间绝缘膜中形成开口并到达下层金属布线导体。通过阻挡金属通过用含Cu金属填充开口来形成金属塞。层间绝缘膜包括含碳氧化硅膜中具有Si-CH2键的含碳氧化硅（SiOCH）膜的绝缘膜。绝缘膜中的Si-CH 2键（1360cm -1）与Si-CH 3键（1270cm -1）的比例在以FTIR光谱的峰高比测定的0.03〜0.05的范围内。

2. 发明申请

US20080290522A1 CARBON CONTAINING SILICON OXIDE FILM HAVING HIGH ASHING TOLERANCE AND ADHESION 失效
标题翻译：含有高耐磨性和粘合性的含氧化硅膜的碳
公开(公告)号：US20080290522A1
公开(公告)日：2008-11-27
申请号：US12180652
申请日：2008-07-28
申请人： Sadayuki Ohnishi , Kouichi Owto , Tatsuya Usami , Noboru Morita , Kouji Arita , Ryouhei Kitao , Youichi Sasaki
发明人： Sadayuki Ohnishi , Kouichi Owto , Tatsuya Usami , Noboru Morita , Kouji Arita , Ryouhei Kitao , Youichi Sasaki
IPC分类号： H01L23/48
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02137 , H01L21/02211 , H01L21/02274 , H01L21/02282 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31633 , H01L21/76801 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an interlayer insulating film formed on or over a semiconductor substrate. An opening is formed in the interlayer insulating film and reaches a lower layer metal wiring conductor. A metal plug is formed by filling the opening with Cu containing metal via a barrier metal. The interlayer insulating film includes the insulating film which includes a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond in the carbon containing silicon oxide film. The proportion of Si—CH2 bond (1360 cm-1) to Si—CH3 bond (1270 cm-1) in the insulating film is in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum.
摘要翻译：半导体器件包括形成在半导体衬底上或之上的层间绝缘膜。在层间绝缘膜中形成开口并到达下层金属布线导体。通过阻挡金属通过用含Cu金属填充开口来形成金属塞。层间绝缘膜包括含碳氧化硅膜中具有Si-CH2键的含碳氧化硅（SiOCH）膜的绝缘膜。绝缘膜中的Si-CH 2键（1360cm -1）与Si-CH 3键（1270cm -1）的比例在以FTIR光谱的峰高比测定的0.03〜0.05的范围内。

3. 发明授权

US07420279B2 Carbon containing silicon oxide film having high ashing tolerance and adhesion 失效
标题翻译：含碳氧化硅膜具有高的灰化耐受性和粘附性
公开(公告)号：US07420279B2
公开(公告)日：2008-09-02
申请号：US11477011
申请日：2006-06-28
申请人： Sadayuki Ohnishi , Kouichi Ohto , Tatsuya Usami , Noboru Morita , Kouji Arita , Ryouhei Kitao , Youichi Sasaki
发明人： Sadayuki Ohnishi , Kouichi Ohto , Tatsuya Usami , Noboru Morita , Kouji Arita , Ryouhei Kitao , Youichi Sasaki
IPC分类号： H01L23/48
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02137 , H01L21/02211 , H01L21/02274 , H01L21/02282 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31633 , H01L21/76801 , H01L2924/0002 , H01L2924/00
摘要： An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm−1) to Si—CH3 bond (1270 cm−1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.
摘要翻译：一种用于半导体器件的层间绝缘膜并具有低介电常数的绝缘膜。绝缘膜包括其中具有Si-CH2键的含碳氧化硅（SiOCH）膜。绝缘膜中Si-CH2键（1360cm-1）与Si-CH3键（1270cm-1）的比例优选为以FTIR光谱的峰高比测量的0.03至0.05的范围。当与仅具有CH3基团的常规SiOCH膜相比时，根据本发明的绝缘膜具有较高的灰化耐受性和改善的与SiO 2膜的粘附性。

4. 发明申请

US20060255466A1 Carbon containing silicon oxide film having high ashing tolerance and adhesion 失效
公开(公告)号：US20060255466A1
公开(公告)日：2006-11-16
申请号：US11477011
申请日：2006-06-28
申请人： Sadayuki Ohnishi , Kouichi Ohto , Tatsuya Usami , Noboru Morita , Kouji Arita , Ryouhei Kitao , Youichi Sasaki
发明人： Sadayuki Ohnishi , Kouichi Ohto , Tatsuya Usami , Noboru Morita , Kouji Arita , Ryouhei Kitao , Youichi Sasaki
IPC分类号： H01L23/52
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02137 , H01L21/02211 , H01L21/02274 , H01L21/02282 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31633 , H01L21/76801 , H01L2924/0002 , H01L2924/00
摘要： An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm−1) to Si—CH3 bond (1270 cm−1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.

5. 发明授权

US07102236B2 Carbon containing silicon oxide film having high ashing tolerance and adhesion 失效
标题翻译：含碳氧化硅膜具有高的灰化耐受性和粘附性
公开(公告)号：US07102236B2
公开(公告)日：2006-09-05
申请号：US10767230
申请日：2004-01-29
申请人： Sadayuki Ohnishi , Kouichi Ohto , Tatsuya Usami , Noboru Morita , Kouji Arita , Ryouhei Kitao , Youichi Sasaki
发明人： Sadayuki Ohnishi , Kouichi Ohto , Tatsuya Usami , Noboru Morita , Kouji Arita , Ryouhei Kitao , Youichi Sasaki
IPC分类号： H01L21/316
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02137 , H01L21/02211 , H01L21/02274 , H01L21/02282 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31633 , H01L21/76801 , H01L2924/0002 , H01L2924/00
摘要： An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm−1) to Si—CH3 bond (1270 cm−1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.
摘要翻译：一种用于半导体器件的层间绝缘膜并具有低介电常数的绝缘膜。绝缘膜包括其中具有Si-CH2键的含碳氧化硅（SiOCH）膜。绝缘膜中Si-CH2键（1360cm-1）与Si-CH3键（1270cm-1）的比例优选为以FTIR光谱的峰高比测量的0.03至0.05的范围。当与仅具有CH3基团的常规SiOCH膜相比时，根据本发明的绝缘膜具有较高的灰化耐受性和改善的与SiO 2膜的粘合性。

6. 发明申请

US20050006665A1 Carbon containing silicon oxide film having high ashing tolerance and adhesion 失效
标题翻译：含碳氧化硅膜具有高的灰化耐受性和粘附性
公开(公告)号：US20050006665A1
公开(公告)日：2005-01-13
申请号：US10767230
申请日：2004-01-29
申请人： Sadayuki Ohnishi , Kouichi Ohto , Tatsuya Usami , Noboru Morita , Kouji Arita , Ryouhei Kitao , Youichi Sasaki
发明人： Sadayuki Ohnishi , Kouichi Ohto , Tatsuya Usami , Noboru Morita , Kouji Arita , Ryouhei Kitao , Youichi Sasaki
IPC分类号： C23C16/42 , C23C16/40 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L31/0336
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02137 , H01L21/02211 , H01L21/02274 , H01L21/02282 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31633 , H01L21/76801 , H01L2924/0002 , H01L2924/00
摘要： An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm−1) to Si—CH3 bond (1270 cm−1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.
摘要翻译：一种用于半导体器件的层间绝缘膜并具有低介电常数的绝缘膜。绝缘膜包括其中具有Si-CH2键的含碳氧化硅（SiOCH）膜。绝缘膜中Si-CH2键（1360cm-1）与Si-CH3键（1270cm-1）的比例优选为以FTIR光谱的峰高比测量的0.03至0.05的范围。当与仅具有CH3基团的常规SiOCH膜相比时，根据本发明的绝缘膜具有较高的灰化耐受性和改善的与SiO 2膜的粘附性。

7. 发明申请

US20060078028A1 Discharge excitation type pulse laser apparatus 失效
标题翻译：放电激励型脉冲激光装置
公开(公告)号：US20060078028A1
公开(公告)日：2006-04-13
申请号：US10963694
申请日：2004-10-13
申请人： Kouji Kakizaki , Youichi Sasaki , Naoki Kataoka
发明人： Kouji Kakizaki , Youichi Sasaki , Naoki Kataoka
IPC分类号： H01S3/22
CPC分类号： H01S3/038 , H01S3/036 , H01S3/0385 , H01S3/041 , H01S3/225
摘要： For the purpose of providing a discharge excitation type pulse laser apparatus capable of reducing disturbance of the discharge space caused by shock waves, the discharge excitation type pulse laser apparatus according to the present invention is designed for generating a pulsed main discharge by applying a high voltage between main electrodes (14, 15) including a cathode (15) and an anode (14) arranged in opposition to each other, and thereby exciting a laser gas in a discharge space (37) defined between the main electrodes to oscillate laser light (21), and characterized in that no reflector larger than a prescribed size is provided on a surface within a prescribed surface distance (LC) from the discharge space (37), and an insulating cathode insulating member (54) that is inclined such that the cathode (15) side end is highest is arranged on at least one of the upstream and downstream sides of the cathode (15) in close contact with the cathode (15).
摘要翻译：为了提供能够减少由冲击波引起的放电空间的扰动的放电励磁型脉冲激光装置，本发明的放电励磁型脉冲激光装置被设计成通过施加高电压来产生脉冲主放电在主电极（14,15）之间，包括阴极（15）和阳极（14），彼此相对布置，从而激励在主电极之间限定的放电空间（37）中的激光气体，以振荡激光（ 21），其特征在于，在距所述放电空间（37）的规定表面距离（LC）内的表面上设置不大于规定尺寸的反射器，以及绝缘阴极绝缘构件（54），其倾斜使得在阴极（15）的上游侧和下游侧的至少一个上与阴极（15）紧密接触地设置阴极（15）侧端部最高。

8. 发明授权

US08455850B2 Extreme ultraviolet light source apparatus and method of generating extreme ultraviolet light 有权
标题翻译：极紫外光源装置和产生极紫外光的方法
公开(公告)号：US08455850B2
公开(公告)日：2013-06-04
申请号：US13416884
申请日：2012-03-09
申请人： Akira Endo , Yoshifumi Ueno , Youichi Sasaki , Osamu Wakabayashi
发明人： Akira Endo , Yoshifumi Ueno , Youichi Sasaki , Osamu Wakabayashi
IPC分类号： H05G2/00
CPC分类号： G21K5/00 , G03F7/70033 , H05G2/00 , H05G2/003 , H05G2/008
摘要： An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light.
摘要翻译：一种极紫外光源装置，其特征在于，所述极紫外光源装置包括：前脉冲激光光源，其产生前脉冲激光光源，所述极紫外光源装置包括：前脉冲激光光源，其通过用前脉冲激光照射所述靶之后用主脉冲激光照射靶，在一部分目标物保留的同时用前脉冲激光照射靶的预等离子体，在与目标区域不同的区域产生预等离子体，不同的区域位于预激光激光的入射侧; 以及通过用主脉冲激光照射预等离子体而产生极紫外光的主脉冲激光光源。

9. 发明申请

US20120161040A1 EXTREME ULTRAVIOLET LIGHT SOURCE APPARATUS AND METHOD OF GENERATING EXTREME ULTRAVIOLET LIGHT 有权
标题翻译：极光紫外线光源装置及其产生极光紫外线灯的方法
公开(公告)号：US20120161040A1
公开(公告)日：2012-06-28
申请号：US13416884
申请日：2012-03-09
申请人： Akira Endo , Yoshifumi Ueno , Youichi Sasaki , Osamu Wakabayashi
发明人： Akira Endo , Yoshifumi Ueno , Youichi Sasaki , Osamu Wakabayashi
IPC分类号： G21K5/00
CPC分类号： G21K5/00 , G03F7/70033 , H05G2/00 , H05G2/003 , H05G2/008
摘要： An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light.
摘要翻译：一种极紫外光源装置，其特征在于，所述极紫外光源装置包括：前脉冲激光光源，其产生前脉冲激光光源，所述极紫外光源装置包括：前脉冲激光光源，其通过用前脉冲激光照射所述靶之后用主脉冲激光照射靶，在一部分目标物保留的同时用前脉冲激光照射靶的预等离子体，在与目标区域不同的区域产生预等离子体，不同的区域位于预激光激光的入射侧; 以及通过用主脉冲激光照射预等离子体而产生极紫外光的主脉冲激光光源。

10. 发明授权

US08710472B2 Target output device and extreme ultraviolet light source apparatus 有权
标题翻译：目标输出装置和极紫外光源装置
公开(公告)号：US08710472B2
公开(公告)日：2014-04-29
申请号：US13192857
申请日：2011-07-28
申请人： Takanobu Ishihara , Youichi Sasaki , Kouji Kakizaki , Masahiro Inoue , Takayuki Yabu , Hideo Hoshino
发明人： Takanobu Ishihara , Youichi Sasaki , Kouji Kakizaki , Masahiro Inoue , Takayuki Yabu , Hideo Hoshino
IPC分类号： H05G2/00
CPC分类号： H05G2/003 , H05G2/005 , H05G2/006 , H05G2/008
摘要： A target output device may include: a main body for storing a target material; a nozzle unit, connected to the main body, for outputting the target material as a target; an electrode unit provided so as to face the nozzle unit; a voltage control unit that applies predetermined voltage between the electrode unit and the target material to generate electrostatic force therebetween for pulling out the target material through the nozzle unit; a pressure control unit that applies predetermined pressure to the target material; and an output control unit that causes the target to be outputted through the nozzle unit by controlling signal output timing of each of a first timing signal and a second timing signal, the first timing signal causing the voltage control unit to apply the predetermined voltage between the target material and the electrode unit at first timing, and the second timing signal causing the pressure control unit to apply the predetermined pressure to the target material at second timing.
摘要翻译：目标输出装置可以包括：用于存储目标材料的主体; 喷嘴单元，连接到主体，用于输出目标材料作为目标; 设置成面向喷嘴单元的电极单元; 电压控制单元，其在所述电极单元和所述目标材料之间施加预定电压，以在其间产生静电力，以通过所述喷嘴单元拉出所述目标材料; 压力控制单元，其向所述目标材料施加预定压力; 以及输出控制单元，其通过控制第一定时信号和第二定时信号中的每一个的信号输出定时使所述目标通过所述喷嘴单元输出，所述第一定时信号使所述电压控制单元在所述第一定时信号和所述第二定时信号之间施加所述预定电压目标材料和电极单元，以及第二定时信号，使得压力控制单元在第二定时将预定压力施加到目标材料。

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