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1. 发明申请

US20100276729A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF TRENCH GATE 审中-公开
标题翻译：半导体器件及其制造方法及其制造方法
公开(公告)号：US20100276729A1
公开(公告)日：2010-11-04
申请号：US12743525
申请日：2008-12-02
申请人： Sachiko Aoi , Takahide Sugiyama , Takashi Suzuki , Akitaka Soeno , Tsuyoshi Nishiwaki
发明人： Sachiko Aoi , Takahide Sugiyama , Takashi Suzuki , Akitaka Soeno , Tsuyoshi Nishiwaki
IPC分类号： H01L29/739
CPC分类号： H01L29/7397 , H01L29/0834 , H01L29/4236 , H01L29/42364 , H01L29/66348 , H01L29/66734
摘要： IGBT 10 comprises an n+-type emitter region, an n−-type drift region, a p-type body region disposed between the emitter region and the drift region, a trench gate extending in the body region from the emitter region toward the drift region, and a projecting portion of an insulating material being in contact with a surface of the trench gate. At least a part of the projecting portion projects within the drift region.
摘要翻译： IGBT10包括n +型发射极区域，n型漂移区域，设置在发射极区域和漂移区域之间的p型体区域，在体区域中从发射极区域延伸到漂移区域的沟槽栅极并且绝缘材料的突出部分与沟槽栅极的表面接触。突出部分的至少一部分在漂移区域内突出。

2. 发明授权

US08952449B2 Semiconductor device having both IGBT area and diode area 有权
标题翻译：具有IGBT面积和二极管面积的半导体器件
公开(公告)号：US08952449B2
公开(公告)日：2015-02-10
申请号：US13210624
申请日：2011-08-16
申请人： Masaki Koyama , Yasushi Ookura , Akitaka Soeno , Tatsuji Nagaoka , Takahide Sugiyama , Sachiko Aoi , Hiroko Iguchi
发明人： Masaki Koyama , Yasushi Ookura , Akitaka Soeno , Tatsuji Nagaoka , Takahide Sugiyama , Sachiko Aoi , Hiroko Iguchi
IPC分类号： H01L29/06 , H01L29/861 , H01L21/263 , H01L21/266 , H01L29/08 , H01L29/32 , H01L29/739 , H01L21/265
CPC分类号： H01L29/8611 , H01L21/263 , H01L21/26506 , H01L21/26513 , H01L21/266 , H01L29/063 , H01L29/0834 , H01L29/32 , H01L29/7397
摘要： There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.
摘要翻译：已知在IGBT区域中设置IGBT结构并且在二极管区域中设置二极管结构的IGBT半导体器件，IGBT面积和二极管面积都位于同一衬底内，并且IGBT区域与二极管面积。在这种类型的半导体器件中，当IGBT结构关断时，积聚在IGBT区域内的载流子流入二极管区域的现象。为了防止这种现象，至少在所述IGBT区域内并与所述二极管区域相邻的子区域中提供载流子缩短寿命的区域。在子区域中，省略了IGBT结构的发射极。

3. 发明授权

US08716746B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08716746B2
公开(公告)日：2014-05-06
申请号：US13205845
申请日：2011-08-09
申请人： Masaki Koyama , Yasushi Ookura , Akitaka Soeno , Tatsuji Nagaoka , Takahide Sugiyama , Sachiko Aoi , Hiroko Iguchi
发明人： Masaki Koyama , Yasushi Ookura , Akitaka Soeno , Tatsuji Nagaoka , Takahide Sugiyama , Sachiko Aoi , Hiroko Iguchi
IPC分类号： H01L29/66
CPC分类号： H01L29/1095 , H01L29/0696 , H01L29/407 , H01L29/7397 , H01L29/8613
摘要： In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.
摘要翻译：在半导体装置中，IGBT单元包括通过半导体衬底的基底层到半导体衬底的漂移层的沟槽，沟槽内表面上的栅极绝缘膜，栅极绝缘膜上的栅电极，在基底层的表面部分中的第一导电型发射极区域和在基底层的表面部分中的第二导电类型的第一接触区域。 IGBT单元还包括设置在基极层内的第一导电型浮动层，以将基极层分离成包括发射极区域和第一接触区域的第一部分和与漂移层相邻的第二部分，以及层间绝缘膜设置成覆盖栅电极的端部。二极管单元在基层的表面部分包括第二导电类型的第二接触区域。

4. 发明申请

US20120043581A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120043581A1
公开(公告)日：2012-02-23
申请号：US13205845
申请日：2011-08-09
申请人： Masaki KOYAMA , Yasushi Ookura , Akitaka Soeno , Tatsuji Nagaoka , Takahide Sugiyama , Sachiko Aoi , Hiroko Iguchi
发明人： Masaki KOYAMA , Yasushi Ookura , Akitaka Soeno , Tatsuji Nagaoka , Takahide Sugiyama , Sachiko Aoi , Hiroko Iguchi
IPC分类号： H01L29/739
CPC分类号： H01L29/1095 , H01L29/0696 , H01L29/407 , H01L29/7397 , H01L29/8613
摘要： In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.
摘要翻译：在半导体装置中，IGBT单元包括通过半导体衬底的基底层到半导体衬底的漂移层的沟槽，沟槽内表面上的栅极绝缘膜，栅极绝缘膜上的栅电极，在基底层的表面部分中的第一导电型发射极区域和在基底层的表面部分中的第二导电类型的第一接触区域。 IGBT单元还包括设置在基极层内的第一导电型浮动层，以将基极层分离成包括发射极区域和第一接触区域的第一部分和与漂移层相邻的第二部分，以及层间绝缘膜设置成覆盖栅电极的端部。二极管单元在基层的表面部分包括第二导电类型的第二接触区域。

5. 发明授权

US08716747B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08716747B2
公开(公告)日：2014-05-06
申请号：US13366896
申请日：2012-02-06
申请人： Jun Saito , Sachiko Aoi , Takahide Sugiyama
发明人： Jun Saito , Sachiko Aoi , Takahide Sugiyama
IPC分类号： H01L29/66
CPC分类号： H01L27/0664 , H01L29/0834 , H01L29/32 , H01L29/7397 , H01L29/861
摘要： A diode region and an IGBT region are formed in a semiconductor layer of a semiconductor device. A lifetime controlled region is formed in the semiconductor layer. In a plan view, the lifetime controlled region has a first lifetime controlled region located in the diode region and a second lifetime controlled region located in a part of the IGBT region. The second lifetime controlled region extends from a boundary of the diode region and the IGBT region toward the IGBT region. In the plan view, a tip of the second lifetime controlled region is located in a forming area of the body region in the IGBT region.
摘要翻译：二极管区域和IGBT区域形成在半导体器件的半导体层中。在半导体层中形成寿命受控区域。在平面图中，寿命受控区域具有位于二极管区域中的第一寿命受控区域和位于IGBT区域的一部分中的第二寿命受控区域。第二寿命受控区域从二极管区域和IGBT区域的边界向IGBT区域延伸。在平面图中，第二寿命受控区域的尖端位于IGBT区域的体区的形成区域中。

6. 发明授权

US07549403B2 Engine generator 失效
标题翻译：发动机发电机
公开(公告)号：US07549403B2
公开(公告)日：2009-06-23
申请号：US11326865
申请日：2006-01-06
申请人： Masanobu Yamamoto , Takahide Sugiyama
发明人： Masanobu Yamamoto , Takahide Sugiyama
IPC分类号： F01P1/02 , H02K7/18
CPC分类号： F02B63/04 , F01P1/02 , F01P2005/025 , F02B63/048 , H02K7/1815 , H02K9/06
摘要： An engine generator can have an engine duct for releasing to the outside a cooling air which is used to cool an engine and a muffler, and a generator duct for releasing to the outside a cooling air which is used to cool a generator. The engine duct and the generator duct can be formed in one body as an exhaust duct. The muffler and the generator can be laterally aligned in parallel with each other, and the engine duct and the generator duct can be located in a manner such that the directions of release of the cooling winds from the engine duct and the generator duct are parallel to each other. The exhaust duct can be located with the generator duct secured to a crankcase. An opening of the engine duct, and an opening of the generator duct can be laterally aligned with each other, and the opening of the generator duct can be positioned above the generator.
摘要翻译：发动机发电机可以具有用于向外部释放用于冷却发动机和消声器的冷却空气的发动机管道和用于向外部释放用于冷却发电机的冷却空气的发电机管道。发动机管道和发电机管道可以在一个主体中形成为排气管道。消声器和发电机可以彼此平行地侧向对准，并且发动机管道和发电机管道可以以这样的方式定位，使得来自发动机管道和发电机管道的冷却风的释放方向平行于彼此。排气管可以位于发电机管道固定在曲轴箱上。发动机管道的开口和发电机管道的开口可以彼此横向对准，并且发电机管道的开口可以位于发电机上方。

7. 发明授权

US07064454B2 Power generator system 有权
公开(公告)号：US07064454B2
公开(公告)日：2006-06-20
申请号：US10417452
申请日：2003-04-16
申请人： Mitsuo Fukaya , Takashi Uchino , Takahide Sugiyama
发明人： Mitsuo Fukaya , Takashi Uchino , Takahide Sugiyama
IPC分类号： F02B63/00
CPC分类号： H02P9/04 , F02B63/04 , F02D13/04 , F02D29/06
摘要： A power generator system incorporates a generator driven by an engine. A case houses the generator and the engine. A controller communicates with the engine so as to control the speed at which the engine drives the generator. A temperature sensor is disposed so as to sense a temperature within the case and to send a temperature signal to the controller. The controller controls the speed of the engine depending upon at least the temperature signal received from the temperature sensor.

8. 发明授权

US06975042B2 Engine-driven generator 有权
标题翻译：发动机驱动发电机
公开(公告)号：US06975042B2
公开(公告)日：2005-12-13
申请号：US10630593
申请日：2003-07-30
申请人： Yoshinori Yamada , Takahide Sugiyama , Takashi Fujita , Hitoshi Kashima , Naoto Mazuka , Hisamichi Naito
发明人： Yoshinori Yamada , Takahide Sugiyama , Takashi Fujita , Hitoshi Kashima , Naoto Mazuka , Hisamichi Naito
IPC分类号： F02B63/04 , F02B75/16 , H02K7/18 , H02K9/06
CPC分类号： H02K7/1815 , F02B63/04 , F02B63/047 , F02B75/16
摘要： A power generator unit incorporates an engine and a generator driven by the engine. The generator incorporates a sound insulation cover that allows for efficient cooling of the various internal components. An engine crankcase cover mounts the generator close to the engine to promote a compact construction while allowing sufficient cooling of the engine, the generator, and a muffler. A fan draws in cooling air through one or more cooling air vents to cool a battery, an electronic control unit, the engine, the generator, and the muffler. The insulation cover provides quiet operation and efficient cooling of the power generator unit.
摘要翻译：发电机单元包括发动机和由发动机驱动的发电机。发电机包含隔音盖，可以有效地冷却各种内部组件。发动机曲轴箱盖将发电机靠近发动机安装，以促进紧凑的结构，同时允许发动机，发电机和消音器的充分冷却。风扇通过一个或多个冷却通风口吸入冷却空气，以冷却电池，电子控制单元，发动机，发电机和消音器。绝缘盖提供发电机组的安静运行和高效冷却。

9. 发明授权

US5079412A Point of sale data processing apparatus for handy type bar code reader which can be flush mounted 失效
标题翻译：销售数据处理装置点击可以被冲洗的手持式条形码读取器
公开(公告)号：US5079412A
公开(公告)日：1992-01-07
申请号：US339475
申请日：1989-04-17
申请人： Takahide Sugiyama
发明人： Takahide Sugiyama
IPC分类号： G07G1/00
CPC分类号： G07G1/0018
摘要： A point of sale-data processing apparatus has a handy type optical scanner for reading a bar code attached or marked on a product. The apparatus performs a predetermined process of sales with regard to the product in accordance with product information previously recorded and corresponding to the read bar code. A scanner holding recess for detachably holding the optical scanner is provided at the outer surface of a main body housing of the apparatus, on which various enter keys and a display panel are provided. The scanner held in the recess orients a bar code read window thereof toward the outside of the recess.

10. 发明授权

US08698285B2 Reverse recovery using oxygen-vacancy defects 失效
标题翻译：使用氧空位缺陷进行反向恢复
公开(公告)号：US08698285B2
公开(公告)日：2014-04-15
申请号：US12967373
申请日：2010-12-14
申请人： Tadashi Misumi , Shinya Iwasaki , Takahide Sugiyama
发明人： Tadashi Misumi , Shinya Iwasaki , Takahide Sugiyama
IPC分类号： H01L29/66
CPC分类号： H01L21/02238 , H01L21/263 , H01L21/26506 , H01L29/32 , H01L29/6609 , H01L29/861 , H01L29/868 , Y10S438/92
摘要： A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底的第一主表面上的第一电极和形成在半导体衬底的第二主表面上的第二电极。半导体衬底包括其中氧空位缺陷的密度大于空位簇缺陷的密度的第一区域和空位簇缺陷的密度大于氧空位缺陷的密度的第二区域。

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