专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5292718A Process for preparing superconducting junction of oxide superconductor 失效
标题翻译：制备氧化物超导体超导结的方法
公开(公告)号：US5292718A
公开(公告)日：1994-03-08
申请号：US957639
申请日：1992-10-06
申请人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki , Takashi Matsuura
发明人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki , Takashi Matsuura
IPC分类号： H01L39/24 , B05D5/12
CPC分类号： H01L39/2496 , Y10S505/701 , Y10S505/702 , Y10S505/73 , Y10S505/731 , Y10S505/732
摘要： Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order.In the invention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is preheated at 600.degree.-650.degree. C. for at least 5 minutes in the presence of O.sub.2, and is heated at a temperature between 200.degree. and 400.degree. C. during the non-superconducting intermediate thin film layer is deposited.
摘要翻译：通过在衬底上依次沉积第一氧化物超导体薄层，非超导中间薄膜层和第二氧化物超导体薄膜层来制造超导结的工艺的改进。在本发明中，非超导中间薄膜层由MgO构成，在O 2存在下将基板在600〜650℃预热至少5分钟，并在200度〜在非超导中间薄膜层期间沉积400℃。

2. 发明授权

US5357059A Construction of electrical connection to oxide superconductor 失效
标题翻译：电连接到氧化物超导体的构造
公开(公告)号：US5357059A
公开(公告)日：1994-10-18
申请号：US545618
申请日：1990-06-29
申请人： Saburo Tanaka , Hideo Itozaki , Hidenori Nakanishi
发明人： Saburo Tanaka , Hideo Itozaki , Hidenori Nakanishi
IPC分类号： H01L39/00 , H01L39/24 , H01B12/00
CPC分类号： H01L39/2474 , Y10S505/706 , Y10S505/925
摘要： An electrical connection between an electric conductor and an oxide superconductor is effected without the intermediary of a thin insulating layer that is formed by leaving the oxide superconductor in the atmosphere. This electrical connection is formed by removing the thin insulating layer that is formed by leaving the oxide superconductor in the atmosphere, and by electrically connecting the electric conductor and an exposed surface of the oxide superconductor.
摘要翻译：电导体和氧化物超导体之间的电连接是在没有通过将氧化物超导体留在大气中而形成的薄绝缘层的介质的情况下实现的。通过去除通过在氧化物中留下氧化物超导体而形成的薄绝缘层，并且通过电连接导电体和氧化物超导体的暴露表面而形成该电连接。

3. 发明授权

US5250511A Laser evaporation method for preparing a superconducting oxide thin film 失效
标题翻译：用于制备超导氧化物薄膜的激光蒸发方法
公开(公告)号：US5250511A
公开(公告)日：1993-10-05
申请号：US921028
申请日：1992-07-29
申请人： Tatsuoki Nagaishi , Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki
发明人： Tatsuoki Nagaishi , Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki
IPC分类号： C23C14/28 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24 , B05D3/06 , B05D5/12
CPC分类号： H01L39/2448 , C23C14/28 , Y10S505/73 , Y10S505/732
摘要： Method for preparing a superconducting thin film of compound oxide having improved properties on a substrate by laser evaporation technique. A target has a surface area which is smaller than an irradiation area of a spot of a laser beam used, so that whole surface of the surface is irradiated with the laser beam.

4. 发明授权

US5151408A Process for preparing a-axis oriented high-temperature superconducting thin films 失效
标题翻译：制备面向A轴的高温超导薄膜的工艺
公开(公告)号：US5151408A
公开(公告)日：1992-09-29
申请号：US668263
申请日：1991-03-11
申请人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki
发明人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10S505/731 , Y10S505/732
摘要： A process for preparing a-axis oriented thin film of oxide superconducting material on a substrate by two steps. In the first step, an under-layer of an oxide superconducting material is deposited on the substrate under such a condition that the substrate is heated at a temperature which is suitable to realize an a-axis orientation of crystal of the oxide superconducting material. In the second step, an upper-layer of the same oxide superconducting material is deposited on a surface of the resulting under-layer under such a condition that the substrate is heated at a temperature which is lowered by 10.degree. to 100.degree. C. than the temperature which is used in the first step.

5. 发明授权

US6157044A Tunnel junction type josephson device 失效
标题翻译：隧道结型约瑟夫森装置
公开(公告)号：US6157044A
公开(公告)日：2000-12-05
申请号：US029361
申请日：1993-03-10
申请人： Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki , Shuji Yazu
发明人： Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki , Shuji Yazu
IPC分类号： H01L39/22 , H01L39/24 , H01L29/06 , H01L39/00
CPC分类号： H01L39/225
摘要： A tunnel junction type Josephson device includes a pair of superconductor layers formed of a compound oxide superconductor material and an insulator layer formed between the pair of superconductor layers. The insulator layer is formed of a compound oxide which is composed of the same constituent elements as those of the compound oxide superconductor material of the superconductor layers but with an atomic ratio which does not present a superconductivity characteristics. In addition, the superconductor layers and the insulator layer are continuously formed while supplying oxygen.
摘要翻译：隧道结型约瑟夫逊装置包括由复合氧化物超导体材料形成的一对超导体层和形成在该对超导体层之间的绝缘体层。绝缘体层由复合氧化物形成，该复合氧化物由与超导体层的复合氧化物超导体材料相同的构成元素构成，但是具有不具有超导特性的原子比。此外，超导体层和绝缘体层在供给氧的同时连续地形成。

6. 发明授权

US5693146A Device for forming a compound oxide superconducting thin film 失效
标题翻译：用于形成复合氧化物超导薄膜的装置
公开(公告)号：US5693146A
公开(公告)日：1997-12-02
申请号：US478646
申请日：1995-06-07
申请人： Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki , Shuji Yazu
发明人： Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki , Shuji Yazu
IPC分类号： C01B13/14 , C01G1/00 , C23C14/28 , C30B29/22 , H01L39/24 , C23C14/00
CPC分类号： C23C14/28 , H01L39/2448
摘要： There is disclosed a device for forming a thin film on a substrate by irradiating a target of a compound oxide superconducting material with a laser beam and evaporating on the substrate a thin film corresponding to a composition of the target in an oxygen ambient atmosphere by laser evaporation, a scanning optical system for causing the laser beam to scan being disposed in an optical path of the laser beam.
摘要翻译：公开了一种用于通过用激光束照射复合氧化物超导材料的目标物在基板上形成薄膜的装置，并且通过激光蒸发在基板上在氧气环境气氛中在基板上蒸发对应于靶组成的薄膜用于使激光束扫描的扫描光学系统设置在激光束的光路中。

7. 发明授权

US5478398A Device for forming a compound oxide superconductor thin film 失效
标题翻译：用于形成复合氧化物超导体薄膜的装置
公开(公告)号：US5478398A
公开(公告)日：1995-12-26
申请号：US194809
申请日：1994-02-14
申请人： Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki , Shuji Yazu
发明人： Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki , Shuji Yazu
IPC分类号： C01B13/14 , C01G1/00 , C23C14/28 , C30B29/22 , H01L39/24 , C23C14/00
CPC分类号： C23C14/28 , H01L39/2448
摘要： There is disclosed a device for forming a thin film on a substrate by irradiating a target of a compound oxide superconducting material with a laser beam and evaporating on the substrate a thin film corresponding to a composition of the target in an oxygen ambient atmosphere by laser evaporation, a scanning optical system for causing the laser beam to scan being disposed in an optical path of the laser beam.
摘要翻译：公开了一种用于通过用激光束照射复合氧化物超导材料的目标物在基板上形成薄膜的装置，并且通过激光蒸发在基板上在氧气环境气氛中在基板上蒸发对应于靶组成的薄膜用于使激光束扫描的扫描光学系统设置在激光束的光路中。

8. 发明授权

US5258366A Laser evaporation method for forming high Tc superconducting films 失效
标题翻译：用于形成高Tc超导薄膜的激光蒸发方法
公开(公告)号：US5258366A
公开(公告)日：1993-11-02
申请号：US921336
申请日：1992-07-29
申请人： Tatsuoki Nagaishi , Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki
发明人： Tatsuoki Nagaishi , Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki
IPC分类号： C23C14/34 , C23C14/28 , C30B29/22 , H01B12/06 , H01B13/00 , H01L21/203 , H01L39/24 , B05D3/06 , B05D5/12
CPC分类号： H01L39/2448 , C23C14/28 , Y10S505/73 , Y10S505/732
摘要： Improvement in a method for preparing a superconducting thin film of compound oxide on a substrate (6) by laser evaporation technique. A rear surface of a target (7) used is cooled forcedly by a cooling system (9) during film formation.

9. 发明授权

US5240904A Process for preparing a-axis oriented superconducting oxide thin films 失效
标题翻译：用于制备面向轴的超导氧化物薄膜的方法
公开(公告)号：US5240904A
公开(公告)日：1993-08-31
申请号：US707798
申请日：1991-05-30
申请人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki
发明人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10S505/73 , Y10S505/731 , Y10S505/732
摘要： Improvement in a process for preparing a-axis oriented thin film of high-Tc oxide superconducting material by laser evaporation method. Before the a-axis oriented thin film of oxide superconducting material is deposited by laser evaporation method, an under-layer having an a-axis orientation of the crystal of the same oxide superconducting material is deposited on a substrate previously by sputtering.

10. 发明授权

US5488030A Superconductor junction structure including two oxide superconductor layers separated by a non-superconducting layer 失效
标题翻译：超导体结结构包括由非超导层隔开的两个氧化物超导体层
公开(公告)号：US5488030A
公开(公告)日：1996-01-30
申请号：US366408
申请日：1994-12-29
申请人： Saburo Tanaka , Takashi Matsuura , Hideo Itozaki
发明人： Saburo Tanaka , Takashi Matsuura , Hideo Itozaki
IPC分类号： H01L39/22 , H01B12/00 , H01L29/06
CPC分类号： H01L39/225
摘要： There is disclosed a superconductor junction structure comprising: a first superconducting layer of an oxide superconductor formed in a desired pattern on a substrate; a non-superconducting layer of a non-superconductor formed on at least a part of the side faces of the first superconducting layer, a portion of the surface of the substrate near the part, and a top face of the first superconducting layer; and a second superconducting layer of the oxide superconductor formed on the non-superconducting layer, the non-superconducting layer being formed thin at the part, and forming a tunnel barrier. And further there is disclosed a process for fabricating a superconductor junction structure comprising: the first step of forming a first superconducting layer of an oxide superconductor in a desired pattern on a substrate; the second step of forming a non-superconducting layer of a non-superconductor formed on at least a part of the side faces of the first superconducting layer, a portion of the surface of the substrate near the part, and a top face of the first superconducting layer by depositing the non-superconductor from the above; and the third step of forming a second superconducting layer of the oxide superconductor on the non-superconducting layer.
摘要翻译：公开了一种超导体结结构，包括：在衬底上以期望的图案形成的氧化物超导体的第一超导层; 形成在所述第一超导层的至少一部分侧面上的非超导体的非超导层，所述部分的所述基板表面的一部分以及所述第一超导层的顶面; 以及形成在所述非超导层上的所述氧化物超导体的第二超导层，所述非超导层在所述部分处形成为较薄，并且形成隧道势垒。此外，还公开了一种用于制造超导体结结构的方法，包括：第一步骤，在衬底上形成期望图案的氧化物超导体的第一超导层; 形成在第一超导层的至少一部分侧面上的非超导体的非超导层，部分附近的基板表面的一部分和第一超导体的顶面的第二步骤超导层通过从上面沉积非超导体; 以及在所述非超导层上形成所述氧化物超导体的第二超导层的第三步骤。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式