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1. 发明授权

US10768408B2 Process for manufacturing a MEMS micromirror device, and associated device 有权
公开(公告)号：US10768408B2
公开(公告)日：2020-09-08
申请号：US15465019
申请日：2017-03-21
申请人： STMicroelectronics S.r.l.
发明人： Enri Duqi , Lorenzo Baldo , Roberto Carminati , Flavio Francesco Villa
IPC分类号： G02B26/08 , B81C1/00 , B81B7/02 , G02B26/10 , H04N9/31
摘要： A buried cavity is formed in a monolithic body to delimit a suspended membrane. A peripheral insulating region defines a supporting frame in the suspended membrane. Trenches extending through the suspended membrane define a rotatable mobile mass carried by the supporting frame. The mobile mass forms an oscillating mass, supporting arms, spring portions, and mobile electrodes that are combfingered to fixed electrodes of the supporting frame. A reflecting region is formed on top of the oscillating mass.

2. 发明授权

US10676347B2 Micro-electro-mechanical device having two buried cavities and manufacturing process thereof 有权
公开(公告)号：US10676347B2
公开(公告)日：2020-06-09
申请号：US15866380
申请日：2018-01-09
申请人： STMICROELECTRONICS S.R.L.
发明人： Enri Duqi , Lorenzo Baldo , Marco Del Sarto , Mikel Azpeitia Urquia
IPC分类号： B81C1/00 , B81B3/00 , B81B7/00
摘要： A micro-electro-mechanical device, comprising a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region facing the first buried cavity; a second cavity facing the first buried cavity; a decoupling trench extending from the monolithic body and separating the sensitive region from a peripheral portion of the monolithic body; a cap die, forming an ASIC, bonded to and facing the first face of the monolithic body; and a first gap between the cap die and the monolithic body. The device also comprises at least one spacer element between the monolithic body and the cap die; at least one stopper element between the monolithic body and the cap die; and a second gap between the stopper element and one between the monolithic body and the cap die. The second gap is smaller than the first gap.

3. 发明授权

US10578505B2 Process for manufacturing a MEMS pressure sensor, and corresponding MEMS pressure sensor 有权
公开(公告)号：US10578505B2
公开(公告)日：2020-03-03
申请号：US15958461
申请日：2018-04-20
申请人： STMICROELECTRONICS S.R.L.
发明人： Lorenzo Baldo , Sarah Zerbini , Enri Duqi
IPC分类号： G01L9/00 , B81B3/00 , B81C1/00 , B81B7/00
摘要： A process for manufacturing a MEMS pressure sensor having a micromechanical structure envisages: providing a wafer having a substrate of semiconductor material and a top surface; forming a buried cavity entirely contained within the substrate and separated from the top surface by a membrane suspended above the buried cavity; forming a fluidic-communication access for fluidic communication of the membrane with an external environment, set at a pressure the value of which has to be determined; forming, suspended above the membrane, a plate made of polysilicon, separated from the membrane by an empty space; and forming electrical-contact elements for electrical connection of the membrane and of the plate, which are designed to form the plates of a sensing capacitor, the value of capacitance of which is indicative of the value of pressure to be detected. A corresponding MEMS pressure sensor having the micromechanical structure is moreover described.

4. 发明申请

US20180031822A1 PROCESS FOR MANUFACTURING A MEMS MICROMIRROR DEVICE, AND ASSOCIATED DEVICE 审中-公开
公开(公告)号：US20180031822A1
公开(公告)日：2018-02-01
申请号：US15465019
申请日：2017-03-21
申请人： STMicroelectronics S.r.l.
发明人： Enri Duqi , Lorenzo Baldo , Roberto Carminati , Flavio Francesco Villa
IPC分类号： G02B26/08 , G02B26/10 , H04N9/31 , B81C1/00 , B81B7/02
摘要： A buried cavity is formed in a monolithic body to delimit a suspended membrane. A peripheral insulating region defines a supporting frame in the suspended membrane. Trenches extending through the suspended membrane define a rotatable mobile mass carried by the supporting frame. The mobile mass forms an oscillating mass, supporting arms, spring portions, and mobile electrodes that are combfingered to fixed electrodes of the supporting frame. A reflecting region is formed on top of the oscillating mass.

5. 发明授权

US09688531B2 Micro-electro-mechanical device having two buried cavities and manufacturing process thereof 有权
公开(公告)号：US09688531B2
公开(公告)日：2017-06-27
申请号：US15191160
申请日：2016-06-23
申请人： STMICROELECTRONICS S.R.L.
发明人： Lorenzo Baldo , Enri Duqi , Flavio Francesco Villa
IPC分类号： B81B3/00 , B81B7/00 , B81C1/00
CPC分类号： B81B7/0045 , B81B3/0072 , B81B2201/0228 , B81B2201/025 , B81B2203/0127 , B81B2203/0163 , B81B2203/0315 , B81B2207/012 , B81C1/00182 , B81C1/00325 , B81C2201/0116 , B81C2201/0173 , B81C2203/0785 , G02B26/0858
摘要： A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

6. 发明授权

US09628919B2 Wafer level assembly of a MEMS sensor device and related MEMS sensor device 有权
公开(公告)号：US09628919B2
公开(公告)日：2017-04-18
申请号：US14265053
申请日：2014-04-29
申请人： STMicroelectronics S.r.l.
发明人： Sebastiano Conti , Matteo Perletti , Roberto Carminati , Lorenzo Baldo , Alessandro Morcelli
IPC分类号： H01L29/84 , H04R19/00 , H04R1/04 , H04R19/04
CPC分类号： H04R19/005 , H01L29/84 , H04R1/04 , H04R19/04
摘要： An assembly of a MEMS sensor device envisages: a first die, integrating a micromechanical detection structure and having an external main face; a second die, integrating an electronic circuit operatively coupled to the micromechanical detection structure, electrically and mechanically coupled to the first die and having a respective external main face. Both of the external main faces of the first die and of the second die are set in direct contact with an environment external to the assembly, without interposition of a package.

7. 发明申请

US20160076962A1 INTEGRATED TRANSDUCER PROVIDED WITH A TEMPERATURE SENSOR AND METHOD FOR SENSING A TEMPERATURE OF THE TRANSDUCER 审中-公开
公开(公告)号：US20160076962A1
公开(公告)日：2016-03-17
申请号：US14950832
申请日：2015-11-24
申请人： STMicroelectronics S.r.l.
发明人： Lorenzo Baldo , Michele Vaiana , Mario Chiricosta , Mario Maiore , Paul Georges Marie Rose
IPC分类号： G01L19/00 , G01L9/00 , G01K7/01
CPC分类号： G01L19/0092 , G01K7/01 , G01L9/0054 , G01L9/065
摘要： A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

8. 发明申请

US20140077798A1 INTEGRATED TRIAXIAL MAGNETOMETER OF SEMICONDUCTOR MATERIAL MANUFACTURED IN MEMS TECHNOLOGY 有权
标题翻译： MEMS技术制造的半导体材料的集成三光子计
公开(公告)号：US20140077798A1
公开(公告)日：2014-03-20
申请号：US13905006
申请日：2013-05-29
申请人： STMicroelectronics S.r.l.
发明人： Lorenzo Baldo , Francesco Procopio , Sarah Zerbini
IPC分类号： G01R33/028
CPC分类号： G01R33/0286 , G01R33/0005 , G01R33/028 , G01R33/038
摘要： Two suspended masses are configured so as to be flowed by respective currents flowing in the magnetometer plane in mutually transversal directions and are capacitively coupled to lower electrodes. Mobile sensing electrodes are carried by the first suspended mass and are capacitively coupled to respective fixed sensing electrodes. The first suspended mass is configured so as to be mobile in a direction transversal to the plane in presence of a magnetic field having a component in a first horizontal direction. The second suspended mass is configured so as to be mobile in a direction transversal to the plane in presence of a magnetic field having a component in a second horizontal direction, and the first suspended mass is configured so as to be mobile in a direction parallel to the plane and transversal to the current flowing in the first suspended mass in presence of a magnetic field having a component in a vertical direction.
摘要翻译：两个悬挂质量被配置为使得在相互横向上在磁力计平面中流动的相应电流流动，并且电容耦合到下电极。移动感测电极由第一悬浮质量携带并且电容耦合到相应的固定感测电极。第一悬挂质量被配置为在存在具有在第一水平方向上的分量的磁场的情况下在横向于平面的方向上是可移动的。第二悬挂质量被配置为在存在具有在第二水平方向上的分量的磁场的情况下在横向于平面的方向上是可移动的，并且第一悬挂质量被配置为在平行于并且在存在具有在垂直方向上的分量的磁场的情况下横向于在第一悬浮质量块中流动的电流。

9. 发明授权

US11673799B2 Method of processing a wafer for manufacturing an oscillating structure such as a micro-mirror 有权
公开(公告)号：US11673799B2
公开(公告)日：2023-06-13
申请号：US17155429
申请日：2021-01-22
申请人： STMicroelectronics S.r.l.
发明人： Enri Duqi , Nicolo′ Boni , Lorenzo Baldo , Massimiliano Merli , Roberto Carminati
IPC分类号： B81C1/00 , H01L41/35
CPC分类号： B81C1/00158 , H01L41/35 , B81C2201/013
摘要： To manufacture an oscillating structure, a wafer is processed by: forming torsional elastic elements; forming a mobile element connected to the torsional elastic elements; processing the first side of the wafer to form a mechanical reinforcement structure; and processing the second side of said wafer by steps of chemical etching, deposition of metal material, and/or deposition of piezoelectric material. Processing of the first side of the wafer is carried out prior to processing of the second side of the wafer so as not to damage possible sensitive structures formed on the first side of the wafer.

10. 发明授权

US11555554B2 Membrane microfluidic valve with piezoelectric actuation and manufacturing process thereof 有权
公开(公告)号：US11555554B2
公开(公告)日：2023-01-17
申请号：US16842474
申请日：2020-04-07
申请人： STMicroelectronics S.r.l.
发明人： Enri Duqi , Lorenzo Baldo
IPC分类号： F16K99/00 , F16K31/00 , B23P15/00 , H01L41/09
摘要： A microfluidic valve formed in a body having a first and a second surface; an inlet channel extending in the body from the second surface; a first transverse channel extending in the body in a transverse direction with respect to the inlet channel; and an outlet channel extending in the body from the first surface. The inlet channel, the first transverse channel and the outlet channel form a fluidic path. The microfluidic valve further has an occluding portion, formed by the body and extending over the transverse channel; and a piezoelectric actuator coupled to the occluding portion and configured to move the occluding portion from an opening position of the valve, where the occluding portion does not interfere with the fluidic path, and a closing position of the valve, where the occluding portion interferes with and interrupts the fluidic path.

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