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1. 发明授权

US10986295B2 Image sensor, imaging apparatus and live body imaging apparatus 有权
公开(公告)号：US10986295B2
公开(公告)日：2021-04-20
申请号：US16866260
申请日：2020-05-04
申请人： Sony Corporation
发明人： Masashi Nakata
IPC分类号： H04N5/374 , H04N5/378 , H01L27/146 , H04N9/04 , G02B5/20 , A61B5/145 , A61B5/20 , H04N5/355 , H04N5/3745 , A61B5/1455
摘要： There is provided an image sensor including a pixel unit, the pixel unit including a photodiode, a first color filter and a second color filter each disposed in a different position on a plane above the photodiode, and a first on-chip lens disposed over the first color filter and a second on-chip lens disposed over the second color filter.

2. 发明申请

US20190214419A9 SOLID STATE IMAGING DEVICE, MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC EQUIPMENT 审中-公开
公开(公告)号：US20190214419A9
公开(公告)日：2019-07-11
申请号：US15722960
申请日：2017-10-02
申请人： SONY CORPORATION
发明人： Hiroshi Tayanaka , Yuuji Inoue , Masashi Nakata
IPC分类号： H01L27/146
CPC分类号： H01L27/14621 , H01L27/14605 , H01L27/14623 , H01L27/14627 , H01L27/14634 , H01L27/14656 , H01L27/14685
摘要： A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.

3. 发明申请

US20180205900A1 IMAGE SENSOR, IMAGING APPARATUS AND LIVE BODY IMAGING APPARATUS 审中-公开
公开(公告)号：US20180205900A1
公开(公告)日：2018-07-19
申请号：US15920671
申请日：2018-03-14
申请人： Sony Corporation
发明人： Masashi Nakata
IPC分类号： H04N5/374 , H01L27/146 , A61B5/1455 , G02B5/20 , H04N5/378 , H04N9/04
CPC分类号： H04N5/374 , A61B5/14552 , A61B2562/0233 , A61B2562/046 , G02B5/201 , H01L27/14605 , H01L27/14612 , H01L27/14621 , H01L27/14627 , H01L27/14645 , H04N5/35554 , H04N5/3745 , H04N5/37455 , H04N5/37457 , H04N5/378 , H04N9/045 , H04N2209/047
摘要： There is provided an image sensor including a pixel unit, the pixel unit including a photodiode, a first color filter and a second color filter each disposed in a different position on a plane above the photodiode, and a first on-chip lens disposed over the first color filter and a second on-chip lens disposed over the second color filter.

4. 发明授权

US09485479B2 Information processing apparatus and method, and photoelectric conversion apparatus 有权
公开(公告)号：US09485479B2
公开(公告)日：2016-11-01
申请号：US14801644
申请日：2015-07-16
申请人： Sony Corporation
发明人： Masashi Nakata
IPC分类号： G06F3/038 , G09G5/00 , H04N9/04 , H04N5/235 , H04N9/73
CPC分类号： H04N9/045 , H04N5/2351 , H04N9/735 , H04N2209/042
摘要： An information processing apparatus includes: multiple optical propagation paths configured to propagate light; a photoelectric conversion element configured to perform photoelectric conversion on light propagated through each of the multiple optical propagation paths at mutually different partial areas in a photoelectric conversion area; and an estimating unit configured to estimate illuminance or color temperature to be obtained at the photoelectric conversion element, using an electric signal corresponding to light propagated through each of the optical propagation paths.

5. 发明授权

US09124753B2 Information processing apparatus and method, and photoelectric conversion apparatus 有权
标题翻译：信息处理装置和方法以及光电转换装置
公开(公告)号：US09124753B2
公开(公告)日：2015-09-01
申请号：US13922014
申请日：2013-06-19
申请人： Sony Corporation
发明人： Masashi Nakata
IPC分类号： G06F3/038 , G09G5/00 , H04N9/73 , H04N9/04 , H04N5/235
CPC分类号： H04N9/045 , H04N5/2351 , H04N9/735 , H04N2209/042
摘要： An information processing apparatus includes: multiple optical propagation paths configured to propagate light; a photoelectric conversion element configured to perform photoelectric conversion on light propagated through each of the multiple optical propagation paths at mutually different partial areas in a photoelectric conversion area; and an estimating unit configured to estimate illuminance or color temperature to be obtained at the photoelectric conversion element, using an electric signal corresponding to light propagated through each of the optical propagation paths.
摘要翻译：信息处理设备包括：多个光传播路径，被配置为传播光; 光电转换元件，被配置为对在光电转换区域中的相互不同的部分区域中通过所述多个光传播路径中的每一个传播的光进行光电转换; 以及估计单元，被配置为使用与通过每个光传播路径传播的光相对应的电信号来估计在光电转换元件处获得的照度或色温。

6. 发明授权

US09013626B2 Signal processing circuit of solid-state imaging element, signal processing method of solid-state imaging element, and electronic apparatus 有权
标题翻译：固态成像元件的信号处理电路，固态成像元件的信号处理方法和电子设备
公开(公告)号：US09013626B2
公开(公告)日：2015-04-21
申请号：US13673241
申请日：2012-11-09
申请人： Sony Corporation
发明人： Masashi Nakata
IPC分类号： H04N5/238 , H04N5/335 , H04N5/355 , H04N5/262
CPC分类号： H04N5/335 , H04N5/35554
摘要： A signal processing circuit of a solid-state imaging element which processes a signal of the solid-state imaging element having a first pixel group and a second pixel group in which a charge accumulation time or photosensitivity is different by α times from that of the first pixel group, includes a calculation unit that multiplies a signal value of a pixel of interest in the first pixel group by α times, a weighting unit that performs weighting with respect to the signal value of the pixel of interest based on a signal value of a pixel associated with the pixel of interest, and a synthesis unit that synthesizes the signal value which has been multiplied by α times in the calculation unit and on which the weighting has been performed in the weighting unit and a signal value of a pixel of the second pixel group.
摘要翻译：固态成像元件的信号处理电路，其处理具有第一像素组和第二像素组的固态成像元件的信号，其中电荷累积时间或光敏度与第一像素组的电荷累积时间或光敏度不同像素组包括：计算单元，其将第一像素组中的感兴趣像素的信号值乘以α倍;对于感兴趣像素的信号值，基于a的信号值执行加权的加权单元与所关注的像素相关联的像素，以及合成单元，其将在所述计算单元中已被乘以α倍的信号值合成，并且在所述加权单元中对所述加权单元进行了加权，并且所述第二像素组。

7. 发明授权

US11211415B2 Solid state imaging device, manufacturing method of the same, and electronic equipment 有权
公开(公告)号：US11211415B2
公开(公告)日：2021-12-28
申请号：US16867141
申请日：2020-05-05
申请人： SONY CORPORATION
发明人： Hiroshi Tayanaka , Yuuji Inoue , Masashi Nakata
IPC分类号： H01L27/146
摘要： A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.

8. 发明授权

US10367992B2 Image sensor and electronic apparatus 有权
公开(公告)号：US10367992B2
公开(公告)日：2019-07-30
申请号：US15815324
申请日：2017-11-16
申请人： SONY CORPORATION
发明人： Masashi Nakata
IPC分类号： G02B7/34 , H04N5/232 , G03B13/36 , H01L27/146 , H04N5/225 , H04N5/369 , H04N9/04 , H04N5/265
摘要： The present technology relates to an image sensor and an electronic apparatus which enable higher-quality images to be obtained. Provided is an image sensor including a plurality of pixels, each pixel including one on-chip lens, and a plurality of photoelectric conversion layers formed below the on-chip lens. Each of at least two of the plurality of photoelectric conversion layers is split, partially formed, or partially shielded from light with respect to a light-receiving surface. The pixels are phase difference detection pixels for performing AF by phase difference detection or imaging pixels for generating an image. The present technology can be applied to a CMOS image sensor, for example.

9. 发明授权

US10263024B2 Imaging element, electronic device, and manufacturing method 有权
公开(公告)号：US10263024B2
公开(公告)日：2019-04-16
申请号：US14908201
申请日：2015-05-27
申请人： SONY CORPORATION
发明人： Masashi Nakata
IPC分类号： H01L27/146 , H04N5/369 , H04N5/232
摘要： The present technology relates to an imaging element, an electronic device, and a manufacturing method that make it possible to prevent color mixing in a pixel adjacent to a phase difference detection pixel and to make the light receiving sensitivity high or more. An anti-reflection film is formed only on the side wall of a light blocking unit that blocks part of the incident light on a photo diode of phase difference detection pixels for detecting the phase difference out of a plurality of pixels. Thereby, the light reflected at the side wall of the light blocking unit does not enter a photo diode of an adjacent pixel, and therefore color mixing is prevented. Furthermore, since the anti-reflection film is not formed on an interlayer layer, the light receiving sensitivity of the light that directly enters the photo diode is not reduced. The present technology can be applied to imaging elements.

10. 发明授权

US10128285B2 Imaging element, electronic device, and information processing device 有权
公开(公告)号：US10128285B2
公开(公告)日：2018-11-13
申请号：US15412884
申请日：2017-01-23
申请人： SONY CORPORATION
发明人： Susumu Ooki , Masashi Nakata
IPC分类号： H01L27/146 , H01L27/30 , H01L25/065
摘要： The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs.

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