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1. 发明申请

US20220293659A1 IMAGE SENSING DEVICE 有权
公开(公告)号：US20220293659A1
公开(公告)日：2022-09-15
申请号：US17522615
申请日：2021-11-09
申请人： SK hynix Inc.
发明人： Sung Wook CHO
IPC分类号： H01L27/146 , H04N5/369 , H04N5/359 , H04N5/351
摘要： An image sensing device for preventing a crosstalk path is disclosed. The image sensing device includes a substrate including a plurality of photoelectric conversion elements, each of which generates and accumulates photocharges corresponding to incident light and a plurality of lenses disposed over the substrate, and arranged to receive the incident light and to direct received incident light to the plurality of photoelectric conversion elements, wherein the plurality of lenses includes a first lens and a second lens that are arranged to contact each other and have different refractive indexes from each other.

2. 发明申请

US20220077211A1 IMAGE SENSING DEVICE 有权
公开(公告)号：US20220077211A1
公开(公告)日：2022-03-10
申请号：US17225656
申请日：2021-04-08
申请人： SK hynix Inc.
发明人： Sung Wook CHO
IPC分类号： H01L27/146
摘要： An image sensing device includes photoelectric conversion elements structured to convert light into electrical signals, and a color filter layer structured to filter incident light towards the photoelectric conversion elements depending on a wavelength range of the incident light corresponding to colors of the incident light to allow the filtered light to be detected by the photoelectric conversion elements corresponding to the colors of the incident light. The color filter layer includes a plurality of first color filters as part of the different filters and structured to allow light at a wavelength range corresponding to a first color and arranged adjacent to each other. A distance between at least one of the first color filters and a corresponding photoelectric conversion element formed below the at least one of the first color filters is different from a distance between the remaining first color filters and corresponding photoelectric conversion elements, respectively.

3. 发明公开

US20240323527A1 IMAGE SENSING DEVICE 审中-公开
公开(公告)号：US20240323527A1
公开(公告)日：2024-09-26
申请号：US18408318
申请日：2024-01-09
申请人： SK hynix Inc.
发明人： Sung Wook CHO
IPC分类号： H04N23/67 , G02B6/42 , H01L27/146
CPC分类号： H04N23/672 , G02B6/4206 , H01L27/1462 , H01L27/14627 , H01L27/1463
摘要： An image sensing device includes: a plurality of photoelectric conversion elements included in a unit pixel and located in a substrate layer; an isolation structure configured to isolate the plurality of photoelectric conversion elements from photoelectric conversion elements included in another unit pixel; a first anti-reflection layer configured to overlap the plurality of photoelectric conversion elements and disposed to be in contact with one surface of the substrate layer; a light guide disposed between the plurality of photoelectric conversion elements and disposed to be in contact with one surface of the substrate layer and the first anti-reflection layer; a grid layer configured to overlap the isolation structure; and a second anti-reflection layer disposed to be in contact with the first anti-reflection layer, the light guide, and the grid layer, wherein the light guide includes a material having a refractive index smaller than a refractive index of the first anti-reflection layer.

4. 发明申请

US20230042186A1 IMAGE SENSING DEVICE 有权
公开(公告)号：US20230042186A1
公开(公告)日：2023-02-09
申请号：US17859280
申请日：2022-07-07
申请人： SK hynix Inc.
发明人： Sung Wook CHO
IPC分类号： H01L27/146
摘要： An image sensing device includes a pixel array configured to include a plurality of pixel groups arranged in a matrix structure. Each of the pixel groups includes an optical filter configured to selectively pass incident light, a plurality of photoelectric conversion regions disposed below the optical filter and arranged in a matrix structure, a first isolation structure disposed between the photoelectric conversion regions and other pixel groups, a plurality of second isolation structures disposed between two adjacent photoelectric conversion regions from among the photoelectric conversion regions, and a third isolation structure disposed between the second isolation structures, and configured to interconnect the second isolation structures. The third isolation structure includes a cavity region formed adjacent to contact any one of the photoelectric conversion regions.

5. 发明申请

US20190297291A1 IMAGE SENSOR 审中-公开
公开(公告)号：US20190297291A1
公开(公告)日：2019-09-26
申请号：US16000315
申请日：2018-06-05
申请人： SK hynix Inc. , Dong-A University Research Foundation For Industry -Academy Cooperation
发明人： Yun Kyung KIM , Kyoung In LEE , Youngwoong DO , Min Su CHO , Sung Wook CHO
IPC分类号： H04N5/374 , G02B7/09 , G02B5/20 , H04M1/02 , H04N5/232
摘要： An image sensor includes a pixel array in which auto-focus (AF) pixels and image capture pixels are arranged. Wherein at least one of the AF pixels comprises: a color filter layer; and first and second microlenses arranged over the color filter layer, and formed in a region of the at least one AF pixel in a widthwise direction of the color filter layer.

6. 发明申请

US20230016604A1 IMAGE SENSING DEVICE 有权
公开(公告)号：US20230016604A1
公开(公告)日：2023-01-19
申请号：US17678344
申请日：2022-02-23
申请人： SK hynix Inc.
发明人： Sung Wook CHO
IPC分类号： H04N5/369 , H04N9/04 , H01L27/146
摘要： An image sensing device includes a pixel array including image sensing pixels, phase detection pixel pairs disposed between the image sensing pixels, photoelectric conversion regions corresponding to the image sensing pixels and the phase detection pixels, device isolation structures isolating the photoelectric conversion regions, color filters corresponding to the image sensing pixels and the phase detection pixel pairs, a first grid structure disposed between a color filter of a first image sensing pixel and a color filter of an adjacent first phase detection pixel pair and shifted by a first distance from a first device isolation structure disposed between the first image sensing pixel and the first phase detection pixel pair, and a second grid structure disposed in color filters of the first phase detection pixel pair and shifted by a second distance from a second device isolation structure disposed between the first phase detection pixel pairs.

7. 发明公开

US20240264038A1 PROBE CARD 审中-公开
公开(公告)号：US20240264038A1
公开(公告)日：2024-08-08
申请号：US18357018
申请日：2023-07-21
申请人： SK hynix Inc.
发明人： Sung Wook CHO , Yeon Su YEO
IPC分类号： G01M11/02 , G01R1/073 , G01R31/28
CPC分类号： G01M11/0214 , G01R1/07314 , G01R31/2886
摘要： Probe cards that can replace lens units are disclosed. In some implementations, a probe card may include a lens unit through which light irradiated from a light source unit; a jig into which the lens unit is inserted inside, and a holder unit for closely supporting the lens unit.

8. 发明公开

US20240186342A1 IMAGE SENSING DEVICE 审中-公开
公开(公告)号：US20240186342A1
公开(公告)日：2024-06-06
申请号：US18355238
申请日：2023-07-19
申请人： SK hynix Inc.
发明人： Sung Wook CHO
IPC分类号： H01L27/146
CPC分类号： H01L27/14605 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14645 , H04N25/78
摘要： An image sensing device includes a pixel region provided in a first portion of a semiconductor substrate such that photoelectric conversion elements for converting incident light into an electrical signal are disposed in the first portion of the semiconductor substrate, a dummy region located outside the pixel region to surround the pixel region and provided in a second portion of the semiconductor substrate without including a photoelectric conversion element, first microlenses disposed over the first portion of the semiconductor substrate and in the pixel region, the first microlenses configured to converge the incident light onto corresponding photoelectric conversion elements, second microlenses disposed over the second portion of the semiconductor substrate and in the dummy region, the second microlenses isolated from the first microlenses, and at least one alignment pattern disposed in the second portion of semiconductor substrate so as to be aligned with the second microlenses.

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