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    • 3. 发明申请
    • IMAGE SENSING DEVICE
    • US20230026792A1
    • 2023-01-26
    • US17726859
    • 2022-04-22
    • SK hynix Inc.
    • Ken SAWADA
    • H01L27/146H01L23/48
    • An image sensing device includes a first substrate layer including a photoelectric conversion region for converting incident light into photocharges and a floating diffusion region for storing the photocharges therein, a first interconnect layer disposed over the first substrate layer and including a switch transistor gate overlapping at least a portion of the floating diffusion region, a second substrate layer disposed over the first interconnect layer, a second interconnect layer disposed over the second substrate layer, and a capacitor electrically coupled to the floating diffusion region by the switch transistor gate. The capacitor includes first and second electrodes that are disposed across the first interconnect layer, the second substrate layer, and the second interconnect layer, wherein a portion of the first interconnect layer, a portion of the second substrate layer, and a portion of the second interconnect layer are disposed between the first electrode and the second electrode.