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1. 发明授权

US09996098B2 Voltage generation circuit and integrated circuit including the same 有权
公开(公告)号：US09996098B2
公开(公告)日：2018-06-12
申请号：US15199389
申请日：2016-06-30
申请人： SK hynix Inc.
发明人： Kyeong-Tae Kim , Chang-Hyun Lee , Jae-Boum Park , Saeng-Hwan Kim
IPC分类号： G11C5/14 , G05F3/08 , G11C11/4074
CPC分类号： G05F3/08
摘要： A voltage generation circuit includes: a periodic wave generator that generates an on/off signal that is periodically enabled/disabled, where at least one between a period and a duty cycle of the on/off signal is controlled based on at least one information among temperature information, capacitance information, leakage current information, speed information, and voltage level information; and an internal voltage generator that is enabled/disabled in response to the on/off signal and generates an internal voltage.

2. 发明授权

US09116535B2 Differential amplifier 有权
标题翻译：差分放大器
公开(公告)号：US09116535B2
公开(公告)日：2015-08-25
申请号：US13844917
申请日：2013-03-16
申请人： SK hynix Inc.
发明人： Jae-Boum Park , Cheol-Hoe Kim
IPC分类号： H03F3/45 , G05F1/46 , H03F1/02 , H03F3/21
CPC分类号： H03F1/301 , G05F1/463 , G05F1/468 , G05F3/08 , H03F1/0261 , H03F3/211 , H03F3/45179 , H03F3/45183 , H03F2200/468 , H03F2203/45674
摘要： A differential amplification circuit includes a first current control unit configured to control driving current in response to a voltage level difference between first input voltage and second input voltage, a second current control unit configured to control the driving current in response to a voltage level difference between the second input voltage independent from temperature and a temperature voltage depending on the temperature, and a signal output unit configured to generate a detection signal in response to the driving current.
摘要翻译：差分放大电路包括：第一电流控制单元，被配置为响应于第一输入电压和第二输入电压之间的电压电平差来控制驱动电流;第二电流控制单元，被配置为响应于第一输入电压和第二输入电压之间的电压电平差来控制驱动电流; 独立于温度的第二输入电压和取决于温度的温度电压;以及信号输出单元，被配置为响应于驱动电流产生检测信号。

3. 发明授权

US09647613B2 Differential amplifier 有权
公开(公告)号：US09647613B2
公开(公告)日：2017-05-09
申请号：US14819081
申请日：2015-08-05
申请人： SK hynix Inc.
发明人： Jae-Boum Park , Cheol-Hoe Kim
IPC分类号： H03F1/30 , G05F1/46 , H03F3/45 , G05F3/08 , H03F1/02 , H03F3/21
CPC分类号： H03F1/301 , G05F1/463 , G05F1/468 , G05F3/08 , H03F1/0261 , H03F3/211 , H03F3/45179 , H03F3/45183 , H03F2200/468 , H03F2203/45674
摘要： A differential amplification circuit includes a first current control unit configured to control driving current in response to a voltage level difference between first input voltage and second input voltage, a second current control unit configured to control the driving current in response to a voltage level difference between the second input voltage independent from temperature and a temperature voltage depending on the temperature, and a signal output unit configured to generate a detection signal in response to the driving current.

4. 发明授权

US09396786B2 Memory and memory system including the same 有权
标题翻译：内存和内存系统包括相同
公开(公告)号：US09396786B2
公开(公告)日：2016-07-19
申请号：US14506366
申请日：2014-10-03
申请人： SK hynix Inc.
发明人： Seok-Cheol Yoon , Bo-Yeun Kim , Jae-Boum Park
IPC分类号： G11C11/406
CPC分类号： G11C11/40615 , G11C11/40611 , G11C2211/4065
摘要： A memory includes a plurality of word lines each coupled to one or more memory cells, an address storage unit suitable for storing an address of a word line selected for access by a control unit among the plurality of word lines at a first time point; and the control unit suitable for sequentially refreshing the plurality of word lines in response to application of a refresh command, refreshing one or more adjacent word lines adjacent to a word line corresponding to the address stored in the address storage unit in response to every Nth application of the refresh command where N is a natural number and selecting one or more of the plurality of word lines for access, wherein the first time point is included in time section other than a refresh section in which the control unit refreshes one or more word lines in response to application of the refresh command.
摘要翻译：存储器包括多个字线，每个字线都耦合到一个或多个存储器单元，地址存储单元适于在第一时间点存储多个字线中由控制单元选择访问的字线的地址; 并且所述控制单元适于响应于刷新命令的应用来顺序地刷新所述多个字线，响应于每第N个应用来刷新与存储在所述地址存储单元中的地址相对应的字线相邻的一个或多个相邻字线的刷新命令，其中N是自然数，并且选择用于访问的多个字线中的一个或多个，其中第一时间点包括在除了刷新部分之外的时间部分中，其中控制单元刷新一个或多个字线响应于刷新命令的应用。

5. 发明授权

US09508398B1 Voltage generation circuit, semiconductor memory device including the same, and method for driving the same 有权
标题翻译：电压产生电路，包括该电路的半导体存储器件及其驱动方法
公开(公告)号：US09508398B1
公开(公告)日：2016-11-29
申请号：US15047273
申请日：2016-02-18
申请人： SK hynix Inc.
发明人： Yoon-Jae Shin , Jae-Boum Park
IPC分类号： G11C16/04 , G11C5/14 , G05F1/46 , G11C7/06 , G11C7/08 , G11C7/12 , G11C11/4074
CPC分类号： G11C5/147 , G05F1/468 , G11C5/145 , G11C7/062 , G11C7/08 , G11C7/12 , G11C11/4074 , G11C11/4091
摘要： A semiconductor memory device includes a voltage generation unit suitable for selecting one of the voltages which are supplied to a first and a second source voltage terminals, as a source voltage based on a driving mode signal, and generating a bit line precharge voltage by dividing the source voltage according to a resistance ratio determined based on the driving mode signal; a sense amplifier driving unit suitable for receiving the bit line precharge voltage based on a bit line precharge signal and a sense amplifier control signal, and providing a driving voltage through a pull-up power line and a pull-down power line; and a bit line sense amplifier suitable for sensing and amplifying data of a bit line pair by using the driving voltage supplied through the pull-up power line and the pull-down power line.
摘要翻译：半导体存储器件包括：电压产生单元，适于选择提供给第一和第二源极电压端子的电压中的一个作为基于驱动模式信号的源极电压，并且通过将源电压根据基于驱动模式信号确定的电阻比; 感测放大器驱动单元，适于基于位线预充电信号和读出放大器控制信号接收位线预充电电压，并通过上拉电源线和下拉电源线提供驱动电压; 以及适用于通过使用通过上拉电源线和下拉电源线提供的驱动电压来检测和放大位线对的数据的位线读出放大器。

6. 发明授权

US10236767B2 Semiconductor device and internal voltage adjusting method thereof 有权
公开(公告)号：US10236767B2
公开(公告)日：2019-03-19
申请号：US15840018
申请日：2017-12-13
申请人： SK hynix Inc.
发明人： Jae-Boum Park , Bong-Hwa Jeong , Chang-Hyun Lee
IPC分类号： H02M3/07 , G05F1/56 , H03K3/03
摘要： A semiconductor device may include a trimming circuit suitable for generating a reference voltage that is adjusted based on a code value, and an internal voltage generation circuit suitable for generating an internal voltage based on the reference voltage, wherein the internal voltage generation circuit is suitable for dividing the internal voltage in a division ratio that varies depending on an operation mode and for generating the internal voltage based on comparison of the divided internal voltage with the reference voltage.

7. 发明授权

US10020071B2 Test mode setting circuit and semiconductor device including the same 有权
公开(公告)号：US10020071B2
公开(公告)日：2018-07-10
申请号：US15090278
申请日：2016-04-04
申请人： SK hynix Inc.
发明人： Sang-Ho Lee , Kyeong-Tae Kim , Jae-Boum Park
IPC分类号： G11C29/14 , G11C29/36 , G11C29/08 , G11C29/54 , G11C29/38 , G11C29/44 , G11C29/50 , G11C29/46
CPC分类号： G11C29/36 , G11C29/08 , G11C29/14 , G11C29/38 , G11C29/44 , G11C29/46 , G11C29/50004 , G11C29/54
摘要： A test mode setting circuit may include: a first test mode signal generation unit operated by a first supply voltage, and suitable for activating a first test mode signal at a first voltage level in a state where mode setting is being performed, the first test mode signal corresponding to a test code among a plurality of first test mode signals; and a second test mode signal generation unit operated by a second supply voltage, and suitable for latching the first test mode signal at a second voltage level and generating the latched first test mode signal as a second test mode signal even when the first supply voltage is deactivated to a third supply voltage lower than the first supply voltage.

8. 发明授权

US08970257B2 Semiconductor device for offset compensation of reference current 有权
标题翻译：用于参考电流偏移补偿的半导体器件
公开(公告)号：US08970257B2
公开(公告)日：2015-03-03
申请号：US14094343
申请日：2013-12-02
申请人： SK hynix Inc.
发明人： Jae-Boum Park
IPC分类号： H03K5/01 , H03K3/012
CPC分类号： H03K3/012 , G05F3/242 , G11C5/147 , G11C29/021 , G11C29/028
摘要： A semiconductor device includes a reference current generator suitable for generating a reference current, a current-voltage converter suitable for generating a first reference voltage and a second reference voltage in response to the reference current, and an analog-digital converter suitable for generating a digital code value based on a voltage difference between the first and second reference voltages, wherein the reference current generator includes a current control unit for controlling the reference current in response to the digital code value.
摘要翻译：一种半导体器件包括适于产生参考电流的参考电流发生器，适于产生响应于参考电流的第一参考电压和第二参考电压的电流 - 电压转换器，以及适于产生数字基于第一和第二参考电压之间的电压差的代码值，其中参考电流发生器包括用于响应于数字代码值来控制参考电流的电流控制单元。

9. 发明授权

US10234888B2 Voltage generation circuit and integrated circuit including the same 有权
公开(公告)号：US10234888B2
公开(公告)日：2019-03-19
申请号：US15977807
申请日：2018-05-11
申请人： SK hynix Inc.
发明人： Kyeong-Tae Kim , Chang-Hyun Lee , Jae-Boum Park , Saeng-Hwan Kim
IPC分类号： H02M3/07 , G05F3/08
摘要： A voltage generation circuit includes: a periodic wave generator that generates an on/off signal that is periodically enabled/disabled, where at least one between a period and a duty cycle of the on/off signal is controlled based on at least one information among temperature information, capacitance information, leakage current information, speed information, and voltage level information; and an internal voltage generator that is enabled/disabled in response to the on/off signal and generates an internal voltage.

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