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1. 发明授权

US09691614B2 Methods of forming different sized patterns 有权
公开(公告)号：US09691614B2
公开(公告)日：2017-06-27
申请号：US15242903
申请日：2016-08-22
申请人： SK hynix Inc.
发明人： Keun Do Ban , Jong Cheon Park , Jung Gun Heo , Hong Ik Kim , Cheol Kyu Bok
IPC分类号： H01L21/027 , H01L21/311 , H01L21/033 , H01L21/02
CPC分类号： H01L21/0276 , G03F7/0002 , H01L21/02118 , H01L21/02318 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/32139
摘要： A method includes forming a template portion to provide a first opening trench portion surrounding a first isolated pattern, and forming an array of pillars on an underlying layer; forming a separation wall layer including first separation wall portions surrounding sidewalls of the pillars, and forming second separation wall portions covering sidewalls of the first opening trench portion; forming a block copolymer layer on the separation wall layer; forming first domains in gaps between the pillars, and forming second domains surrounding and separating the first domains by annealing the block copolymer layer; forming second openings by selectively removing the first domains; forming third openings between the second openings, and forming a fourth opening adjacent to the first isolated pattern by selectively removing the pillars and the template portion; and forming fifth openings, which extend from the second and third openings and penetrate the underlying layer, and forming a sixth opening, which extends from the fourth opening and penetrates the underlying layer.

2. 发明授权

US09245796B1 Methods of fabricating interconnection structures 有权
公开(公告)号：US09245796B1
公开(公告)日：2016-01-26
申请号：US14925821
申请日：2015-10-28
申请人： SK hynix Inc.
发明人： Keun Do Ban , Cheol Kyu Bok , Min Ae Yoo , Jong Cheon Park
IPC分类号： H01L21/4763 , H01L21/768
CPC分类号： H01L21/76877 , H01L21/0337 , H01L21/31144 , H01L21/76808 , H01L21/76816 , H01L23/5226 , H01L23/528 , H01L23/53295 , H01L2221/1063 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating an interconnection structure according to an embodiment of the present invention, includes patterning a dielectric layer to form a first recession region, including a first nest-shaped recession region having a first width and a first line-shaped recession region having a second width, which is less than the first width. A guide spacer layer is formed on sidewalls of the first recession region to provide a second recession region including a second nest-shaped recession region in the first nest-shaped recession region. A self-assembling block copolymer material is formed to fill the second nest-shaped recession region. The self-assembling block copolymer material is annealed to form a polymer block domain and a polymer block matrix, surrounding the polymer block domain. The polymer block domain is removed to expose a portion of the dielectric layer. The exposed portion of the dielectric layer is etched to form a via cavity.

3. 发明授权

US09640399B2 Methods of forming patterns with block copolymer 有权
公开(公告)号：US09640399B2
公开(公告)日：2017-05-02
申请号：US14823718
申请日：2015-08-11
申请人： SK hynix Inc.
发明人： Jung Gun Heo , Hong Ik Kim , Keun Do Ban , Cheol Kyu Bok
IPC分类号： H01L21/033 , H01L21/324 , H01L21/311 , H01L23/544 , G03F7/00
CPC分类号： H01L21/0338 , G03F7/0002 , H01L21/0337 , H01L21/31144 , H01L23/544 , H01L2223/5442 , H01L2223/54426
摘要： A method of forming patterns includes forming a guide pattern and first peripheral patterns on an underlying layer. The guide pattern provides first openings and the first peripheral patterns provide a fifth opening used in alignment of the guide pattern. An alignment status of the guide pattern is verified using the fifth opening. A block copolymer layer is formed to fill the first and fifth openings. The block copolymer layer is annealed to provide a blocking portion sealing the fifth opening and to form first domains in each first opening and a second domain surrounding the first domains formed in each first opening. The first domains are removed to form third openings. The underlying layer is etched using the blocking portion and sidewalls of the second domains as etch barriers to form fourth openings that extend from the third openings to penetrate the underlying layer.

4. 发明授权

US09449840B1 Methods of forming different sized patterns 有权
标题翻译：形成不同尺寸图案的方法
公开(公告)号：US09449840B1
公开(公告)日：2016-09-20
申请号：US14850419
申请日：2015-09-10
申请人： SK hynix Inc.
发明人： Keun Do Ban , Jong Cheon Park , Jung Gun Heo , Hong Ik Kim , Cheol Kyu Bok
IPC分类号： H01L21/02 , H01L21/033 , H01L21/311
CPC分类号： H01L21/0276 , G03F7/0002 , H01L21/02118 , H01L21/02318 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/32139
摘要： A method includes forming a template portion to provide a first opening trench portion surrounding a first isolated pattern, and forming an array of pillars on an underlying layer; forming a separation wall layer including first separation wall portions surrounding sidewalls of the pillars, and forming second separation wall portions covering sidewalls of the first opening trench portion; forming a block copolymer layer on the separation wall layer; forming first domains in gaps between the pillars, and forming second domains surrounding and separating the first domains by annealing the block copolymer layer; forming second openings by selectively removing the first domains; forming third openings between the second openings, and forming a fourth opening adjacent to the first isolated pattern by selectively removing the pillars and the template portion; and forming fifth openings, which extend from the second and third openings and penetrate the underlying layer, and forming a sixth opening, which extends from the fourth opening and penetrates the underlying layer.
摘要翻译：一种方法包括形成模板部分以提供围绕第一隔离图案的第一开口沟槽部分，以及在下层上形成柱状阵列; 形成分隔壁层，所述分隔壁层包括围绕所述柱的侧壁的第一分隔壁部分，以及形成覆盖所述第一开口沟槽部分的侧壁的第二分隔壁部分; 在分隔壁层上形成嵌段共聚物层; 在所述柱之间的间隙中形成第一区域，以及通过退火所述嵌段共聚物层形成围绕和分离所述第一区域的第二区域; 通过选择性地去除所述第一域来形成第二开口; 在所述第二开口之间形成第三开口，并且通过选择性地移除所述支柱和所述模板部分而形成与所述第一隔离图案相邻的第四开口; 并且形成第五开口，其从第二和第三开口延伸并穿透下面的层，并且形成第六开口，该第六开口从第四开口延伸并穿透下面的层。

5. 发明授权

US09086632B2 Fine pattern structures having block co-polymer materials and methods of fabricating the same 有权
标题翻译：具有嵌段共聚物材料的精细图案结构及其制造方法
公开(公告)号：US09086632B2
公开(公告)日：2015-07-21
申请号：US14229698
申请日：2014-03-28
申请人： SK HYNIX INC.
发明人： Jung Hyung Lee , Cheol Kyu Bok , Keun Do Ban , Myoung Soo Kim , Ki Lyoung Lee
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , G03F7/40 , G03F7/20
CPC分类号： B32B3/263 , B32B27/08 , B32B2457/00 , B32B2457/20 , B32B2457/206 , B32B2551/00 , G03F7/0002 , G03F7/40 , Y10T428/24612
摘要： A method for fine pattern structures includes forming a pattern formation layer over a first region and a second region of a substrate, forming a first block co-polymer layer in the first region, forming a second block co-polymer layer in the second region, etching the first and second block co-polymer layers, and forming the fine pattern structure in the pattern formation layer in the first region without forming a pattern in the pattern formation layer in the second region.
摘要翻译：精细图案结构的方法包括在第一区域的第一区域和第二区域上形成图案形成层，在第一区域形成第一嵌段共聚物层，在第二区域形成第二嵌段共聚物层，蚀刻第一和第二嵌段共聚物层，并且在第一区域中的图案形成层中形成精细图案结构，而不在第二区域中的图案形成层中形成图案。

6. 发明申请

US20140206194A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20140206194A1
公开(公告)日：2014-07-24
申请号：US14225329
申请日：2014-03-25
申请人： SK hynix Inc.
发明人： Ki Lyoung Lee , Cheol Kyu Bok , Keun Do Ban , Jung Gun Heo
IPC分类号： H01L21/308
CPC分类号： H01L21/308 , H01L21/0337
摘要： A method for manufacturing a semiconductor device includes forming an etch-target layer over a semiconductor substrate having a lower structure, forming a first mask pattern over the etch-target layer, forming a spacer material layer with a uniform thickness over the etch-target layer including the first mask pattern, forming a second mask pattern on an indented region of the space material layer, and etching the etch-target layer with the first mask pattern and the second mask pattern as an etch mask to form a fine pattern.
摘要翻译：一种用于制造半导体器件的方法包括在具有较低结构的半导体衬底上形成蚀刻目标层，在蚀刻靶层上形成第一掩模图案，在蚀刻靶层上形成均匀厚度的间隔物材料层包括第一掩模图案，在空间材料层的凹陷区域上形成第二掩模图案，并且用第一掩模图案和第二掩模图案蚀刻蚀刻目标层作为蚀刻掩模以形成精细图案。

7. 发明授权

US09666448B2 Methods of forming patterns 有权
公开(公告)号：US09666448B2
公开(公告)日：2017-05-30
申请号：US14837913
申请日：2015-08-27
申请人： SK hynix Inc.
发明人： Keun Do Ban , Hong Ik Kim , Jung Gun Heo , Cheol Kyu Bok
IPC分类号： C03C15/00 , H01L21/311 , H01L21/033 , H01L27/02
CPC分类号： H01L21/31144 , H01L21/0337 , H01L27/0207
摘要： A method of forming patterns includes forming an array of pillars on an underlying layer stacked on an etch target layer, forming a separation wall layer on the pillars to provide separation walls covering sidewalls of the pillars, forming a block copolymer layer on the separation wall layer, annealing the block copolymer layer to form first domains located between the pillars, and a second domain surrounding and isolating the first domains, selectively removing the first domains to form second openings, selectively removing the pillars to form fourth openings, forming fifth openings that extend from the second and fourth openings to penetrate the underlying layer, forming a sealing pattern that covers and seals dummy openings among the fifth openings, and forming seventh openings that extend from the fifth openings exposed by the sealing pattern to penetrate the etch target layer.

8. 发明授权

US09523917B2 Methods of forming patterns 有权
标题翻译：形成图案的方法
公开(公告)号：US09523917B2
公开(公告)日：2016-12-20
申请号：US15137819
申请日：2016-04-25
申请人： SK hynix Inc.
发明人： Keun Do Ban , Cheol Kyu Bok , Jung Gun Heo , Hong Ik Kim
IPC分类号： G03F7/00 , G03F7/16 , G03F7/20 , G03F7/32 , C09D153/00 , G03F7/11 , G03F7/30 , G03F7/40 , H01L21/027 , H01L21/033 , H01L21/311 , H01L21/3213 , C08F293/00 , C08L53/00
CPC分类号： G03F7/168 , C08F293/00 , C08L53/005 , C09D153/00 , G03F7/0002 , G03F7/002 , G03F7/11 , G03F7/165 , G03F7/20 , G03F7/30 , G03F7/32 , G03F7/322 , G03F7/325 , G03F7/40 , H01L21/0276 , H01L21/0337 , H01L21/31144 , H01L21/32139
摘要： Methods of forming patterns includes guide patterns on a neutral layer. A self-assembling block copolymer (BCP) layer on the guide patterns and the neutral layer. By annealing the self-assembling BCP layer, first polymer block domains and second polymer block domains are formed The guide patterns are formed of a developable antireflective material. The neutral layer is formed of a cross-linked polymeric material.
摘要翻译：形成图案的方法包括中性层上的引导图案。引导图案和中性层上的自组装嵌段共聚物（BCP）层。通过退火自组装BCP层，形成第一聚合物嵌段区域和第二聚合物嵌段区域。引导图案由可显影的抗反射材料形成。中性层由交联的聚合物材料形成。

9. 发明授权

US09354519B2 Methods of forming patterns 有权
标题翻译：形成图案的方法
公开(公告)号：US09354519B2
公开(公告)日：2016-05-31
申请号：US14621049
申请日：2015-02-12
申请人： SK hynix Inc.
发明人： Keun Do Ban , Cheol Kyu Bok , Jung Gun Heo , Hong Ik Kim
IPC分类号： G03F7/00 , G03F7/16 , G03F7/30 , G03F7/11 , G03F7/40 , H01L21/027 , H01L21/033 , C09D153/00 , H01L21/3105 , C08F293/00 , C08L53/00
CPC分类号： C09D153/00 , C08F293/00 , C08L53/005 , G03F7/0002 , G03F7/002 , G03F7/091 , G03F7/11 , G03F7/165 , G03F7/322 , G03F7/325 , G03F7/40 , H01L21/0276 , H01L21/0337 , H01L21/31058 , H01L21/31144 , H01L21/32139
摘要： A method of forming patterns includes: forming guide patterns on an underlying layer, forming a self-assembling block copolymer (BCP) layer on the guide patterns and the underlying layer, annealing the self-assembling BCP layer to form first polymer block domains and second polymer block domains which are alternately and repeatedly arrayed, and selectively removing the first polymer block domains. The guide patterns are formed of a developable antireflective material. In addition, the guide patterns are spaced apart from each other such that a width of each of the guide patterns is less than a distance between the guide patterns.
摘要翻译：形成图案的方法包括：在下层上形成引导图案，在引导图案和下层上形成自组装嵌段共聚物（BCP）层，退火自组装BCP层以形成第一聚合物嵌段区域和第二聚合物嵌段区域交替重复排列的聚合物嵌段结构域，并选择性地除去第一聚合物嵌段结构域。引导图案由可显影的抗反射材料形成。此外，引导图案彼此间隔开，使得每个引导图案的宽度小于引导图案之间的距离。

10. 发明授权

US09257281B2 Methods of fabricating a pattern using the block co-polymer materials 有权
标题翻译：使用嵌段共聚物材料制造图案的方法
公开(公告)号：US09257281B2
公开(公告)日：2016-02-09
申请号：US14326046
申请日：2014-07-08
申请人： SK hynix Inc.
发明人： Keun Do Ban , Cheol Kyu Bok , Myoung Soo Kim
IPC分类号： H01L21/033 , H01L21/027 , H01L21/308 , H01L21/311
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , H01L21/027 , H01L21/0332 , H01L21/308 , H01L21/31144
摘要： A method of fabricating a pattern comprising sequentially forming a pattern formation layer and a neutral layer on over a substrate having in a first regions and a second regions, forming guide patterns on first portions of over the neutral layer in the second regions, forming a first block copolymer layers on over second portions of the neutral layer in the first regions, phase-separating the tint block copolymer layers such that each of the first block copolymer layers includes to form first polymer blocks having a first phase and first polymer blocks having a second phase, removing the guide patterns to form openings that expose the first portions of the neutral layer in the second region, forming a second block copolymer layer on over the phase-separated first block copolymer layers and in the openings, phase-separating the second block copolymer layer into to form second polymer blocks having the first phase and second polymer blocks having the second phase removing the second polymer blocks having the second phase and the first polymer blocks having the second phase, and etching the neutral layer and the pattern formation layer using the first polymer blocks having the first phase and the second polymer blocks having the first phase as an etch masks.
摘要翻译：一种制造图案的方法，包括在具有第一区域和第二区域的基底上顺序地形成图案形成层和中性层，在第二区域中的中性层上的第一部分上形成引导图案，形成第一区域在第一区域中的中性层的第二部分上的嵌段共聚物层，相分离色调嵌段共聚物层，使得每个第一嵌段共聚物层包括形成具有第一相的第一聚合物嵌段和具有第二相的第一聚合物嵌段去除引导图案以形成露出第二区域中的中间层的第一部分的开口，在相分离的第一嵌段共聚物层上和开口中形成第二嵌段共聚物层，将第二嵌段相分离共聚物层以形成具有第一相的第二聚合物嵌段和具有第二相的第二聚合物嵌段去除第二聚合物具有第二相的第一聚合物嵌段和具有第二相的第一聚合物嵌段，并且使用具有第一相的第一聚合物嵌段和具有第一相的第二聚合物嵌段作为蚀刻掩模来蚀刻中性层和图案形成层。

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