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    • 4. 发明申请
    • WARP CORRECTION DEVICE AND WARP CORRECTION METHOD FOR SEMICONDUCTOR ELEMENT SUBSTRATE
    • 用于半导体元件基板的温度校正装置和温度校正方法
    • US20150332978A1
    • 2015-11-19
    • US14807338
    • 2015-07-23
    • SINTOKOGIO, LTD.
    • Kouichi INOUEKazuyoshi MAEDANorihito SHIBUYA
    • H01L21/66H01L21/26
    • H01L22/12H01J37/3171H01L21/26H01L21/265H01L21/67288H01L21/6838H01L22/20H01L22/26H01L33/0095H01L2924/0002H01L2924/00
    • A warp correction apparatus includes an injection mechanism including a nozzle that performs injection treatment, an adsorption table that holds the semiconductor element substrate by adsorption at a principal surface side or a film surface side, a moving mechanism that moves the adsorption table so that the semiconductor element substrate relatively moves with respect to an injection area of an injection particle by the nozzle, an injection treatment chamber that houses the semiconductor element substrate held on the adsorption table and in the interior of which injection treatment is performed, a measurement mechanism that measures a warp of the semiconductor element substrate, and a control device that, based on a difference between a target warp amount and a warp amount measured by the measurement mechanism, performs at least either one of a setting processing of an injection treatment condition of the injection mechanism and an accept/reject determination of the semiconductor element substrate for which injection treatment has been performed.
    • 翘曲矫正装置包括:喷射机构,其包括进行喷射处理的喷嘴;吸附台,其通过主表面侧或膜表面侧的吸附来保持半导体元件基板;移动机构,其移动吸附台,使得半导体 元件基板相对于喷嘴的注射粒子的注入区域相对移动,容纳保持在吸附台上并在其内部进行注射处理的半导体元件基板的注入处理室,测量机构 半导体元件基板的翘曲以及基于目标翘曲量与通过测量机构测量的翘曲量之差的控制装置,进行喷射机构的喷射处理条件的设定处理中的至少一个 以及半导体元件的接受/拒绝确定 已经进行了注射处理的底物。