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1. 发明申请

US20140256227A1 DOUBLE-SIDE POLISHING METHOD 有权
标题翻译：双面抛光方法
公开(公告)号：US20140256227A1
公开(公告)日：2014-09-11
申请号：US14350933
申请日：2012-10-04
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Kazuaki Aoki , Shigeru Oba
IPC分类号： B24B37/08 , B24B49/00 , B24B37/04
CPC分类号： B24B37/08 , B24B37/042 , B24B49/00 , B24B49/03 , H01L21/02024 , H01L22/12 , H01L22/20
摘要： The present invention is directed to a double-side polishing method including interposing a wafer held by a carrier between upper and lower turn tables to which respective polishing pads are attached, and rotating and revolving the carrier while supplying a polishing agent to polish both surfaces of the wafer at the same time, the method including the steps of: first polishing at a high polishing rate; second polishing at a low polishing rate; measuring flatness of the polished wafer; and determining polishing conditions of the second polishing in a next polishing batch on a basis of the measured flatness. The method can stably improve the flatness of a wafer without being affected by variations in carrier thickness over time.
摘要翻译：本发明涉及一种双面抛光方法，其包括将由载体保持的晶片置于安装有相应抛光垫的上下转台之间，并且在提供抛光剂的同时旋转和旋转载体以抛光两个表面所述方法包括以下步骤：首先以高抛光速率进行抛光; 以低抛光速率进行第二次抛光; 测量抛光晶片的平整度; 并且基于所测量的平坦度，在下一个抛光批中确定第二抛光的抛光条件。该方法可以在不受载体厚度随时间变化的影响的情况下稳定地提高晶片的平坦度。

2. 发明公开

US20230258577A1 EDGE PORTION MEASURING APPARATUS AND METHOD FOR MEASURING EDGE PORTION 审中-公开
公开(公告)号：US20230258577A1
公开(公告)日：2023-08-17
申请号：US18153036
申请日：2023-01-11
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Shigeru Oba
IPC分类号： G01N21/95 , G01N21/47 , H01L21/66
CPC分类号： G01N21/9503 , G01N21/4738 , H01L22/12 , G01N2021/4783 , G01N2201/101 , G01N2201/103
摘要： An edge portion measuring apparatus for measuring shape of an edge portion of a wafer, including, a holding portion that holds the wafer, a rotating means for rotating the wafer, a sensor including a light projecting portion for projecting a laser light from a light source onto the edge portion of the wafer held by the holding portion, and a light receiving detection unit receiving diffuse reflected light that the laser light projected is reflected at the edge portion of the wafer, wherein, rotating the wafer while holding the wafer, at least in a range from normal direction of a held surface of the wafer to normal direction of a surface opposite to the held surface, projecting the laser light and detecting the diffuse reflected light by the sensor, being able to measure the shape of an entire area of the edge portion of the wafer by a triangulation method.

3. 发明授权

US09156123B2 Double-side polishing method 有权
标题翻译：双面抛光法
公开(公告)号：US09156123B2
公开(公告)日：2015-10-13
申请号：US14350933
申请日：2012-10-04
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Kazuaki Aoki , Shigeru Oba
IPC分类号： B24B49/03 , B24B49/16 , B24B37/005 , B24B37/08 , B24B37/04 , H01L21/02 , H01L21/66 , B24B49/00
CPC分类号： B24B37/08 , B24B37/042 , B24B49/00 , B24B49/03 , H01L21/02024 , H01L22/12 , H01L22/20
摘要： The present invention is directed to a double-side polishing method including interposing a wafer held by a carrier between upper and lower turn tables to which respective polishing pads are attached, and rotating and revolving the carrier while supplying a polishing agent to polish both surfaces of the wafer at the same time, the method including the steps of: first polishing at a high polishing rate; second polishing at a low polishing rate; measuring flatness of the polished wafer; and determining polishing conditions of the second polishing in a next polishing batch on a basis of the measured flatness. The method can stably improve the flatness of a wafer without being affected by variations in carrier thickness over time.
摘要翻译：本发明涉及一种双面抛光方法，其包括将由载体保持的晶片置于安装有相应抛光垫的上下转台之间，并且在提供抛光剂的同时旋转和旋转载体以抛光两个表面所述方法包括以下步骤：首先以高抛光速率进行抛光; 以低抛光速率进行第二次抛光; 测量抛光晶片的平整度; 并且基于所测量的平坦度，在下一个抛光批中确定第二抛光的抛光条件。该方法可以在不受载体厚度随时间变化的影响的情况下稳定地提高晶片的平坦度。

4. 发明授权

US10147656B2 Sizing device, polishing apparatus, and polishing method 有权
公开(公告)号：US10147656B2
公开(公告)日：2018-12-04
申请号：US15576120
申请日：2016-03-17
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Shigeru Oba , Shiro Amagai
IPC分类号： H01L21/66 , B24B37/013 , B24B37/07 , B24B49/12 , H01L21/306 , B24B37/08 , B24B37/20 , H01L21/02
摘要： A sizing device in a polishing apparatus for measuring a thickness of a wafer in course of polishing by laser beam interference, includes: a light-source for irradiating the wafer in course of polishing with a laser beam, a light-receiving portion for receiving reflected light from the wafer in course of polishing irradiated with the laser beam from the light-source, a calculating part for calculating a measured value of the thickness of the wafer in course of polishing irradiated with the laser beam based on the reflected light received through the light-receiving portion. The calculating part can calculate the wafer thickness in course of polishing by calculating a measuring error value of the wafer thickness in course of polishing from resistivity of the wafer in course of polishing based on a previously determined correlation between wafer resistivity and measuring error value of wafer thickness, and by compensating the measuring error value.

5. 发明授权

US09748089B2 Method for producing mirror-polished wafer 有权
公开(公告)号：US09748089B2
公开(公告)日：2017-08-29
申请号：US14914209
申请日：2014-08-20
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Hiromasa Hashimoto , Yoshihiro Usami , Kazuaki Aoki , Shigeru Oba
IPC分类号： H01L21/02 , H01L21/66 , B24B37/08 , H01L21/687 , H01L21/304
CPC分类号： H01L21/02024 , B24B37/08 , H01L21/02008 , H01L21/02013 , H01L21/02019 , H01L21/304 , H01L21/68764 , H01L21/68771 , H01L22/12 , H01L22/26
摘要： A method for producing mirror-polished wafer, the method produces a plurality of mirror-polished wafers by performing, on plurality of silicon wafers obtained by slicing a silicon ingot, slicing strain removing step of removing strain on a surface caused by slicing, etching step of removing strain caused by the slicing strain removing step, and double-side polishing step of performing mirror polishing on both surfaces of the silicon wafers subjected to etching, each step being performed by batch processing, wherein silicon wafers which are processed in double-side polishing step by batch processing are selected from silicon wafers processed in same batch in the slicing strain removing step and the number of silicon wafers to be selected is made to be equal to the number of silicon wafers processed in the slicing strain removing step or submultiple thereof. As a result, a method that can produce mirror-polished wafers having high flatness is provided.

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