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    • 2. 发明申请
    • LOW NOISE AMPLIFIER
    • 低噪音放大器
    • US20090108943A1
    • 2009-04-30
    • US12188280
    • 2008-08-08
    • MING-CHING KUOSHIAU-WEN KAOCHIH-HUNG CHEN
    • MING-CHING KUOSHIAU-WEN KAOCHIH-HUNG CHEN
    • H03F3/45
    • H03F3/45179H03F3/19H03F2200/294H03F2203/45306H03F2203/45318
    • A low-noise amplifier circuit to convert a single-ended input into a dual-ended output includes an input transconductance stage circuit, including a first MOS transistor coupled in parallel with a second MOS transistor; a current buffer circuit, including a third MOS transistor coupled in parallel with a fourth MOS transistor; each of the first, second, third, and fourth transistors having a body, gate, source, and drain; the input transconductance stage circuit and the current buffer circuit being cascode coupled, forming a cascode amplifier configuration; the single-ended input being at the source of one of the first and second transistors in the input transconductance stage circuit; the dual-ended output being a differential output across the drain of the third transistor and the drain of the fourth transistor; the first and second transistors of the input transconductance stage circuit being cross-coupled, wherein the body of the first transistor is coupled to the source of the second transistor, and the body of the second transistor is coupled to the source of the first transistor; and the third and fourth transistors of the current buffer circuit being cross-coupled, wherein a first capacitance is coupled between the gate of the third transistor and the source of the fourth transistor, and a second capacitance is coupled between the gate of the fourth transistor and the source of the third transistor.
    • 将单端输入转换为双端输出的低噪声放大器电路包括输入跨导级电路,包括与第二MOS晶体管并联耦合的第一MOS晶体管; 电流缓冲电路,包括与第四MOS晶体管并联耦合的第三MOS晶体管; 第一,第二,第三和第四晶体管中的每一个具有主体,栅极,源极和漏极; 输入跨导级电路和当前缓冲电路被共源共栅耦合,形成共源共栅放大器配置; 单端输入在输入跨导级电路中位于第一和第二晶体管之一的源极处; 所述双端输出是跨越所述第三晶体管的漏极和所述第四晶体管的漏极的差分输出; 输入跨导级电路的第一和第二晶体管交叉耦合,其中第一晶体管的主体耦合到第二晶体管的源极,并且第二晶体管的主体耦合到第一晶体管的源极; 并且当前缓冲电路的第三和第四晶体管是交叉耦合的,其中第一电容耦合在第三晶体管的栅极和第四晶体管的源极之间,第二电容耦合在第四晶体管的栅极之间 和第三晶体管的源极。