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1. 发明申请

US20150140726A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20150140726A1
公开(公告)日：2015-05-21
申请号：US14413304
申请日：2013-05-21
申请人： SHARP KABUSHIKI KAISHA
发明人： Shinya Honda , Yoshiyuki Nasuno , Kazuhito Nishimura , Atsushi Tomyo , Takashi Yamada
IPC分类号： H01L31/18 , H01L31/0224
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/186 , Y02E10/50
摘要： A transparent conductive substrate (1) in which a transparent conductive film (12) is placed on a light-transmissive base plate (11) is brought into a reaction chamber of a plasma apparatus without being rinsed (Step (a)) and the transparent conductive film (12) is treated with plasma using a CH4 gas and an H2 gas (Step (b)). After Step (b), semiconductor devices are deposited on the transparent conductive film (12) in series (Steps (c) and (d)) and a semiconductor device (10) is manufactured (Step (e)).
摘要翻译：将透明导电膜（12）放置在透光性基板（11）上的透明导电性基板（1）进入等离子体装置的反应室，不进行冲洗（步骤（a）），透明导电性基板使用CH 4气体和H 2气体用等离子体处理导电膜（12）（步骤（b））。在步骤（b）之后，将半导体器件串联沉积在透明导电膜（12）上（步骤（c）和（d））），制造半导体器件（10）（步骤（e））。

2. 发明申请

US20150101658A1 PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：光伏器件及其制造方法
公开(公告)号：US20150101658A1
公开(公告)日：2015-04-16
申请号：US14399376
申请日：2013-04-15
申请人： SHARP KABUSHIKI KAISHA
发明人： Kazuhito Nishimura , Yoshiyuki Nasuno , Shinya Honda , Takashi Yamada
IPC分类号： H01L31/18 , H01L31/0368 , H01L31/077
CPC分类号： H01L31/1824 , C23C16/24 , C23C16/509 , C23C16/5096 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/02013 , H01L31/0747 , H01L31/075 , H01L31/076 , H01L31/18 , H01L31/1804 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device (10) includes a photovoltaic layer (3) in which a p-type semiconductor layer (31), an i-type semiconductor layer (32), and an n-type semiconductor layer (33) are successively stacked. The p-type semiconductor layer (31) is formed from a p-type thin silicon films (311 to 313). The p-type thin silicon films (311 and 312) are formed by depositing silicon thin films having a p-type conductivity type and then by nitriding the silicon thin films using pulse power in which a 100 Hz to 1 kHz low-frequency pulse power is superimposed on a 1 MHz and 50 MHz high-frequency power as plasma excitation power, and using conditions in which the density of the high-frequency power is 100 to 300 mW/cm2, the pressure during plasma processing is 300 to 600 Pa, and the substrate temperature during plasma processing is 140° C. to 190° C. The p-type thin silicon film (313) is deposited under the above conditions.
摘要翻译：光电器件（10）包括依次层叠p型半导体层（31），i型半导体层（32）和n型半导体层（33）的光电转换层（3）。 p型半导体层（31）由p型薄膜（311〜313）形成。通过沉积具有p型导电类型的硅薄膜然后通过使用脉冲功率氮化硅薄膜来形成p型薄硅膜（311和312），其中使用100Hz至1kHz的低频脉冲功率叠加在作为等离子体激发功率的1MHz和50MHz高频功率上，并且使用其中高频功率的密度为100至300mW / cm 2的条件，等离子体处理期间的压力为300至600Pa，并且等离子体处理期间的衬底温度为140℃至190℃。在上述条件下沉积p型薄膜（313）。

3. 发明申请

US20140248733A1 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：制造光电转换器件的方法
公开(公告)号：US20140248733A1
公开(公告)日：2014-09-04
申请号：US14349936
申请日：2012-09-27
申请人： SHARP KABUSHIKI KAISHA,
发明人： Shinya Honda , Yoshiyuki Nasuno , Takashi Yamada , Kazuhito Nishimura
IPC分类号： H01L21/66 , H01L31/18
CPC分类号： H01L22/26 , H01L31/076 , H01L31/18 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： The present invention provides a method of manufacturing a photoelectric conversion device for forming a semiconductor layer on a substrate by the plasma CVD method. The method includes a first plasma processing step in which a processing temperature reaches a first temperature; a second plasma processing step in which the processing temperature reaches a second temperature; a temperature regulating step of lowering the processing temperature to a third temperature lower than the first temperature and the second temperature after the first plasma processing step and before the second plasma processing step; and a temperature raising step of raising the processing temperature from the third temperature to the second temperature. The first plasma processing step, the temperature regulating step, the temperature raising step, and the second plasma processing step are carried out within the same reaction chamber.
摘要翻译：本发明提供一种通过等离子体CVD方法制造用于在衬底上形成半导体层的光电转换器件的方法。该方法包括第一等离子体处理步骤，其中处理温度达到第一温度; 第二等离子体处理步骤，其中处理温度达到第二温度; 温度调节步骤，将处理温度降低到比第一等离子体处理步骤之后和第二等离子体处理步骤之前的第一温度和第二温度低的第三温度; 以及将处理温度从第三温度提高到第二温度的升温步骤。第一等离子体处理步骤，温度调节步骤，升温步骤和第二等离子体处理步骤在相同的反应室内进行。

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