专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10989948B2 Method for manufacturing active matrix substrate and method for manufacturing liquid crystal display device with touch sensor 有权
公开(公告)号：US10989948B2
公开(公告)日：2021-04-27
申请号：US16571325
申请日：2019-09-16
申请人： Sharp Kabushiki Kaisha
发明人： Hikaru Yoshino , Junichi Morinaga , Tetsuo Kikuchi , Kengo Hara
IPC分类号： G02F1/1333 , G02F1/1362 , H01L27/12
摘要： A method for manufacturing an active matrix substrate including a thin film transistor for each pixel, and a first electrode and a first wiring line for touchscreen panel function includes: forming a transparent electrically conductive film on an interlayer insulating layer and within a first contact hole; forming, on a portion of the transparent electrically conductive film, an upper wiring portion to become an upper layer of the first wiring line; patterning the transparent electrically conductive film to make a pixel electrode and form a lower wiring portion to become a lower layer of the first wiring line; forming a dielectric layer covering the pixel electrode and the first wiring line and having a second contact hole through which a portion of the first wiring line is exposed; and forming a common electrode which is electrically connected to the first wiring line within the second contact hole.

2. 发明授权

US10620495B2 Liquid crystal display device 有权
公开(公告)号：US10620495B2
公开(公告)日：2020-04-14
申请号：US16276654
申请日：2019-02-15
申请人： Sharp Kabushiki Kaisha
发明人： Junichi Morinaga , Hikaru Yoshino , Shogo Suzuki
IPC分类号： G02F1/1362 , G02F1/1337 , G02F1/1335 , G02F1/1343
CPC分类号： G02F1/136209 , G02F1/133512 , G02F1/133707 , G02F1/136286 , G02F2001/134318 , G02F2001/134345 , G02F2001/134372 , G02F2201/40
摘要： The present invention provides a liquid crystal display device which includes: a first substrate; a second substrate; and a light-shielding member disposed between adjacent sub-pixels having different colors, the first substrate includes a second electrode provided with a slit, the slit includes a main slit extending in a first direction and a sub-slit extending in a second direction, when the light-shielding member is provided on the first substrate, the light-shielding member is widened on a side of a closer sub-slit among the sub-slits formed in the sub-pixels that have different colors and disposed on both sides of the light-shielding member, and the light-shielding member is not widened on a side of a farther sub-slit, and when the light-shielding member is provided on the second substrate, the light-shielding member is widened on the side opposite to the case of the first substrate.

3. 发明授权

US10978529B2 Active matrix substrate and method for manufacturing the same 有权
公开(公告)号：US10978529B2
公开(公告)日：2021-04-13
申请号：US16571322
申请日：2019-09-16
申请人： Sharp Kabushiki Kaisha
发明人： Junichi Morinaga , Hikaru Yoshino
IPC分类号： H01L27/32 , H01L27/12 , G02F1/1362 , G02F1/1343 , G02F1/1333 , H01L51/56
摘要： An active matrix substrate includes a first TFT of a peripheral circuit and a second TFT arranged in each pixel, wherein: the first TFT is a top gate or double gate TFT that includes an upper gate electrode on a portion of a first oxide semiconductor layer with a gate insulating layer interposed therebetween; the second TFT is a bottom gate TFT that includes a second lower gate electrode arranged on the substrate side of a second oxide semiconductor layer with a lower insulating layer interposed therebetween and includes no gate electrode on the second oxide semiconductor layer; the second TFT including: an island-shaped insulator layer that is arranged on a portion of the second oxide semiconductor layer so as to overlap with at least a portion of the second lower gate electrode, as seen from a direction normal to the substrate; an upper insulating layer that is arranged on the second oxide semiconductor layer and the island-shaped insulator layer; and a source electrode that is arranged on the upper insulating layer, wherein: a portion of the second oxide semiconductor layer that does not overlap with the island-shaped insulator layer is a low resistance region that has a lower specific resistance than a portion thereof that overlaps with the island-shaped insulator layer; and in an intersection between a source bus line and a gate bus line, the lower insulating layer and the upper insulating layer are located between these bus lines.

4. 发明授权

US10962824B2 Color filter substrate, method of producing the same, and display panel 有权
公开(公告)号：US10962824B2
公开(公告)日：2021-03-30
申请号：US16191976
申请日：2018-11-15
申请人： SHARP KABUSHIKI KAISHA
发明人： Katsuhiro Mikumo , Junichi Morinaga , Hikaru Yoshino
IPC分类号： G02B5/20 , G02F1/1335 , G03F7/00
摘要： A color filter substrate includes a light transmissive substrate, a light blocking layer, a light transmissive layer, and a color layer. The light blocking layer is formed on the light transmissive substrate. The light transmissive layer is formed along an edge of the light blocking layer on the light transmissive substrate. The color layer passes rays of visible light and is tinted a predefined color so that the rays passing therethrough exhibit a predefined color. The color layer includes a section disposed on a top surface of the light transmissive substrate in a blank area and an edge section extending from the section in the blank area over the light transmissive layer and a section of the light blocking layer. A thickness of a section of the light transmissive layer on a blank area side is less than a thickness of the light blocking layer.

5. 发明授权

US10725326B2 Active matrix substrate and liquid crystal display device with touch sensor using the same 有权
公开(公告)号：US10725326B2
公开(公告)日：2020-07-28
申请号：US16571326
申请日：2019-09-16
申请人： Sharp Kabushiki Kaisha
发明人： Hikaru Yoshino , Junichi Morinaga
IPC分类号： G02F1/1333 , G09G3/36 , G02F1/136 , G06F3/041 , G06F3/044
摘要： An active matrix substrate includes: a TFT being disposed on each of a plurality of pixel regions and including an oxide semiconductor layer; an interlayer insulating layer covering the TFT; and a plurality of pixel electrodes, a common electrode including a plurality of common electrode subportions, and a plurality of first wiring lines which are disposed on the interlayer insulating layer. Source and drain electrodes of the TFT are disposed on the oxide semiconductor layer via an upper insulating layer; the source electrode and the drain electrode are electrically connected to the oxide semiconductor layer within, respectively, a source-side aperture and a drain-side aperture which are made in the upper insulating layer; the active matrix substrate further includes a first contact portion which connects the drain electrode with one of the pixel electrodes and a second contact portion which connects one of the common electrode subportions with one of the first wiring lines; and, when viewed from a normal direction of a principal face of the substrate, the first contact portion at least partially overlaps the drain-side aperture, and the second contact portion at least partially overlaps the source-side aperture of the TFT that is disposed in one of the plurality of pixel regions.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式