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1. 发明授权

US09755106B2 Light emitting diode with improved light extraction efficiency 有权
公开(公告)号：US09755106B2
公开(公告)日：2017-09-05
申请号：US14641221
申请日：2015-03-06
申请人： Seoul Viosys Co., Ltd.
发明人： Jeong Hee Yang , Kyoung Wan Kim , Yeo Jin Yoon , Jae Moo Kim , Keum Ju Lee
IPC分类号： B60Q1/56 , H01L33/08 , H01L33/38 , H01L33/46 , H05B33/06 , H01L33/10 , H01L33/24 , H01L33/20 , H01L33/42 , H01L33/00
CPC分类号： H01L33/08 , H01L33/007 , H01L33/10 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/42 , H01L33/46 , H05B33/06
摘要： Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure positioned on a substrate and having a first semiconductor layer, an active layer and a second semiconductor layer. A first electrode pad is electrically connected to the first semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second semiconductor layer. Further, a pattern of light extraction elements is positioned on the second semiconductor layer.

2. 发明申请

US20190148588A1 LIGHT EMITTING DIODE WITH HIGH EFFICIENCY 审中-公开
公开(公告)号：US20190148588A1
公开(公告)日：2019-05-16
申请号：US16246192
申请日：2019-01-11
申请人： Seoul Viosys Co., Ltd.
发明人： Keum Ju Lee , Seom Geun Lee , Kyoung Wan Kim , Yong Woo Ryu , Mi Na Jang
IPC分类号： H01L33/14 , H01L33/42 , H01L27/15 , H01L33/38 , H01L33/62 , H01L33/32 , H01L33/10 , H01L33/06
摘要： A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.

3. 发明申请

US20170069789A1 LIGHT EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20170069789A1
公开(公告)日：2017-03-09
申请号：US15354928
申请日：2016-11-17
申请人： SEOUL VIOSYS CO., LTD.
发明人： Mae Yi Kim , Jin Woong Lee , Yeo Jin Yoon , Seom Geun Lee , Yong Woo Ryu , Keum Ju Lee
IPC分类号： H01L33/14 , H01L33/62 , H01L33/32 , H01L33/42
CPC分类号： H01L33/145 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/62
摘要： A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.
摘要翻译：提供一种发光二极管，其包括：在一个方向上具有细长矩形形状的基板; 位于所述基板上并具有用于暴露第一导电半导体层的开口的发光结构; 设置成更靠近所述基板的第一角部的第一电极焊盘; 第二电极焊盘，被设置为相对靠近所述衬底的与所述第一拐角相对的第二角部; 从所述第一电极焊盘延伸的第一延伸部; 以及从所述第二电极焊盘延伸到所述第一延伸部的侧面的第二延伸部和第三延伸部，其中连接所述第二延伸部的端部和所述第三延伸部的端部的假想线位于所述第一电极焊盘和所述第一角部之间。

4. 发明授权

US09397264B2 Light emitting diode chip having electrode pad 有权
标题翻译：具有电极垫的发光二极管芯片
公开(公告)号：US09397264B2
公开(公告)日：2016-07-19
申请号：US14630273
申请日：2015-02-24
申请人： Seoul Viosys Co., Ltd.
发明人： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
IPC分类号： H01L33/38 , H01L33/10 , H01L33/40 , H01L33/44 , H01L33/60 , H01L33/36 , H01L33/42 , H01L33/46 , H01L33/00 , H01L33/20
CPC分类号： H01L33/387 , H01L33/0008 , H01L33/10 , H01L33/20 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0066
摘要： Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
摘要翻译：本文公开在包括电极焊盘的LED芯片中。 LED芯片包括：第一导电型半导体层，第一导电类型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠，位于与第二导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

5. 发明申请

US20150179879A1 LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 有权
标题翻译：具有改进的光提取效率的发光二极管
公开(公告)号：US20150179879A1
公开(公告)日：2015-06-25
申请号：US14641221
申请日：2015-03-06
申请人： Seoul Viosys Co., Ltd.
发明人： Jeong Hee Yang , Kyoung Wan Kim , Yeo Jin Yoon , Jae Moo Kim , Keum Ju Lee
IPC分类号： H01L33/08 , H01L33/42 , H01L33/24 , H01L33/10
CPC分类号： H01L33/08 , H01L33/007 , H01L33/10 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/42 , H01L33/46 , H05B33/06
摘要： Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure positioned on a substrate and having a first semiconductor layer, an active layer and a second semiconductor layer. A first electrode pad is electrically connected to the first semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second semiconductor layer. Further, a pattern of light extraction elements is positioned on the second semiconductor layer.
摘要翻译：公开了具有改进的光提取效率的发光二极管（LED）。 LED包括位于衬底上并具有第一半导体层，有源层和第二半导体层的发光结构。第一电极焊盘电连接到第一半导体层。第二电极焊盘位于衬底上。绝缘反射层覆盖发光结构的一部分，并且位于第二电极焊盘下方，使得第二电极焊盘与发光结构间隔开。至少一个上延伸部连接到第二电极焊盘以与第二半导体层电连接。此外，光提取元件的图案位于第二半导体层上。

6. 发明授权

US10411164B2 Light-emitting element having ZnO transparent electrode and method for manufacturing same 有权
公开(公告)号：US10411164B2
公开(公告)日：2019-09-10
申请号：US15757636
申请日：2016-08-23
申请人： SEOUL VIOSYS CO., LTD.
发明人： Jin Woong Lee , Chan Seob Shin , Keum Ju Lee , Seom Geun Lee , Myoung Hak Yang , Jacob J. Richardson , Evan C. O'Hara
IPC分类号： H01L33/42 , G02F1/1335 , H01L33/10 , H01L33/32 , H01L33/62 , H01L33/38 , C30B29/16 , H01L33/00 , C30B7/00
摘要： A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (ω2θ) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ω2θ scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (ω) scan, is equal to or less than 900 arc sec.

7. 发明授权

US10181548B2 Light emitting diode with high efficiency 有权
公开(公告)号：US10181548B2
公开(公告)日：2019-01-15
申请号：US15490492
申请日：2017-04-18
申请人： Seoul Viosys Co., Ltd.
发明人： Keum Ju Lee , Seom Geun Lee , Kyoung Wan Kim , Yong Woo Ryu , Mi Na Jang
IPC分类号： H01L33/14 , H01L27/15 , H01L33/06 , H01L33/10 , H01L33/32 , H01L33/42 , H01L33/62
摘要： A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.

8. 发明申请

US20180212102A1 LIGHT EMITTING ELEMENT AND LIGHT EMITTING APPARATUS COMPRISING SAME 审中-公开
公开(公告)号：US20180212102A1
公开(公告)日：2018-07-26
申请号：US15934589
申请日：2018-03-23
申请人： SEOUL VIOSYS CO., LTD.
发明人： Keum Ju Lee , Seom Geun Lee , Jun Ho Yun , Woo Chul Gwak , Sam Seok Jang
IPC分类号： H01L33/24 , H01L33/42 , H01L33/62 , H01L33/54 , H01L33/10 , H01L33/00
CPC分类号： H01L33/24 , H01L33/007 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/42 , H01L33/54 , H01L33/62 , H01L2224/04042 , H01L2224/05012 , H01L2224/16245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/1815 , H01L2924/00014
摘要： A light emitting element comprises: a substrate including protrusions; and a light emitting structure located on the substrate. The protrusions are disposed in a honeycomb pattern and include a first protrusion and second to seventh protrusions which are adjacent to the first protrusion and spaced equidistant from the first protrusions. The angle between a first vector line extending in a direction from the center of the first protrusion toward the center of the second protrusion and a second vector line extending in a direction from the center of the first protrusion to the center of the fourth projection is 120° , the angle between the second vector line and the third vector line extending in a direction from the center of the first projection to the center of the sixth protrusion is 120.

9. 发明申请

US20170047483A1 LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD 审中-公开
标题翻译：具有电极板的发光二极管芯片
公开(公告)号：US20170047483A1
公开(公告)日：2017-02-16
申请号：US15336510
申请日：2016-10-27
申请人： Seoul Viosys Co., Ltd.
发明人： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
IPC分类号： H01L33/38 , H01L33/20 , H01L33/08 , H01L33/46 , H01L33/62 , H01L33/14 , H01L33/42
CPC分类号： H01L33/36 , H01L33/08 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/42 , H01L33/46 , H01L33/62
摘要： Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
摘要翻译：本文公开了包括电极焊盘的LED芯片。 LED芯片包括：第一导电型半导体层，第一导电型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠; 位于与第一导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

10. 发明申请

US20140299905A1 LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY 审中-公开
标题翻译：发光二极管具有提高的光效
公开(公告)号：US20140299905A1
公开(公告)日：2014-10-09
申请号：US14309658
申请日：2014-06-19
申请人： Seoul Viosys Co., Ltd.
发明人： Jeong Hee YANG , Kyoung Wan Kim , Yeo Jin Yoon , Ye Seul Kim , Sang Hyun Oh , Duk Il Suh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong
IPC分类号： H01L33/42 , H01L33/38
CPC分类号： H01L33/385 , H01L33/20 , H01L33/38 , H01L33/42 , H01L2933/0091
摘要： A light-emitting diode includes a substrate, and a light-emitting structure disposed on the substrate. The light-emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including concave portions and convex portions is disposed on the second conductivity-type semiconductor layer. Micro-lenses are disposed on the transparent electrode layer and completely cover the concave portions, and only partially cover the convex portions that are disposed between the micro-lenses.
摘要翻译：发光二极管包括基板和设置在基板上的发光结构。发光结构包括第一导电型半导体层，有源层和第二导电型半导体层。包括凹部和凸部的透明电极层设置在第二导电型半导体层上。微透镜设置在透明电极层上并完全覆盖凹部，并且仅部分地覆盖设置在微透镜之间的凸部。

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