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1. 发明申请

US20140151637A1 TRANSISTORS AND FABRICATION METHOD THEREOF 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US20140151637A1
公开(公告)日：2014-06-05
申请号：US13831995
申请日：2013-03-15
申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.
发明人： DEYUAN XIAO
IPC分类号： H01L29/66 , H01L29/778
CPC分类号： H01L29/66462 , H01L21/8252 , H01L27/088 , H01L29/0847 , H01L29/2003 , H01L29/517 , H01L29/7783
摘要： A method is provided for fabricating a transistor. The method includes providing a semiconductor substrate, and forming a quantum well layer on the semiconductor substrate. The method also includes forming a potential energy barrier layer on the semiconductor substrate, and forming an isolation structure to isolate different transistor regions. Further, the method includes patterning the transistor region to form trenches by removing portions of the quantum well layer and the potential energy barrier layer corresponding to a source region and a drain region, and filling trenches with a semiconductor material to form a source and a drain. Further, the method also includes forming a gate structure on a portion of the quantum well layer and the potential energy barrier layer corresponding to a gate region.
摘要翻译：提供了一种用于制造晶体管的方法。该方法包括提供半导体衬底，并在半导体衬底上形成量子阱层。该方法还包括在半导体衬底上形成势能阻挡层，并形成隔离结构以隔离不同的晶体管区域。此外，该方法包括通过去除与源极区和漏极区相对应的量子阱层和势能势垒层的部分来形成沟槽，以形成沟槽，并且用半导体材料填充沟槽以形成源极和漏极。此外，该方法还包括在量子阱层的一部分上形成栅极结构和对应于栅极区的势垒层。

2. 发明申请

US20150060767A1 NANOWIRES AND NANOWIRE FIELDE-EFFECT TRANSISTORS 审中-公开
标题翻译：纳米级和纳米级场效应晶体管
公开(公告)号：US20150060767A1
公开(公告)日：2015-03-05
申请号：US14536953
申请日：2014-11-10
申请人： Semiconductor Manufacturing International Corp.
发明人： DEYUAN XIAO , JAMES HONG
IPC分类号： H01L29/06 , H01L29/775
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y40/00 , H01L29/66439 , H01L29/66522 , H01L29/775 , H01L29/78 , Y10S977/763 , Y10S977/89 , Y10S977/938
摘要： A method is provided for fabricating a nanowire-based semiconductor structure. The method includes forming a first nanowire with a first polygon-shaped cross-section having a first number of sides. The method also includes forming a semiconductor layer on surface of the first nanowire to form a second nanowire with a second polygon-shaped cross-section having a second number of sides, the second number being greater than the first number. Further, the method includes annealing the second nanowire to remove a substantial number of vertexes of the second polygon-shaped cross-section to form the nanowire with a non-polygon-shaped cross-section corresponding to the second polygon-shaped cross-section.
摘要翻译：提供了一种用于制造基于纳米线的半导体结构的方法。该方法包括形成具有第一数目侧面的第一多边形横截面的第一纳米线。该方法还包括在第一纳米线的表面上形成半导体层以形成具有第二数量的边的第二多边形横截面的第二纳米线，第二数目大于第一数目。此外，该方法包括退火第二纳米线以去除第二多边形截面的大量顶点以形成具有对应于第二多边形截面的非多边形截面的纳米线。

3. 发明申请

US20140151705A1 NANOWIRES, NANOWIRE FIELDE-EFFECT TRANSISTORS AND FABRICATION METHOD 有权
标题翻译： NANOWIRES，NANOWIRE FIELDE-EFFECT TRANSISTORS AND FABRICATION METHOD
公开(公告)号：US20140151705A1
公开(公告)日：2014-06-05
申请号：US13832648
申请日：2013-03-15
申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.
发明人： DEYUAN XIAO , JAMES HONG
IPC分类号： H01L29/78 , H01L29/66
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y40/00 , H01L29/66439 , H01L29/66522 , H01L29/775 , H01L29/78 , Y10S977/763 , Y10S977/89 , Y10S977/938
摘要： A method is provided for fabricating a nanowire-based semiconductor structure. The method includes forming a first nanowire with a first polygon-shaped cross-section having a first number of sides. The method also includes forming a semiconductor layer on surface of the first nanowire to form a second nanowire with a second polygon-shaped cross-section having a second number of sides, the second number being greater than the first number. Further, the method includes annealing the second nanowire to remove a substantial number of vertexes of the second polygon-shaped cross-section to form the nanowire with a non-polygon-shaped cross-section corresponding to the second polygon-shaped cross-section.
摘要翻译：提供了一种用于制造基于纳米线的半导体结构的方法。该方法包括形成具有第一数目侧面的第一多边形横截面的第一纳米线。该方法还包括在第一纳米线的表面上形成半导体层以形成具有第二数量的边的第二多边形横截面的第二纳米线，第二数目大于第一数目。此外，该方法包括退火第二纳米线以去除第二多边形截面的大量顶点以形成具有对应于第二多边形截面的非多边形截面的纳米线。

4. 发明申请

US20140145269A1 TRANSISTORS AND FABRICATION METHOD 有权
标题翻译：晶体管和制造方法
公开(公告)号：US20140145269A1
公开(公告)日：2014-05-29
申请号：US13832933
申请日：2013-03-15
申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.
发明人： DEYUAN XIAO , EMILY SHU
IPC分类号： H01L29/04
CPC分类号： H01L29/1606 , H01L29/045 , H01L29/4908 , H01L29/78603 , H01L29/78648 , H01L29/78654 , H01L29/78696
摘要： A method is provided for fabricating a transistor. The method includes providing a semiconductor substrate, and forming a metal layer on the semiconductor substrate. The method also includes forming a silicon layer having at least one layer of graphene-like silicon on the metal layer, and forming a metal oxide layer by oxidizing a portion of the metal layer underneath the silicon layer. Further, the method includes forming a source region and a drain region connecting with the silicon layer.
摘要翻译：提供了一种用于制造晶体管的方法。该方法包括提供半导体衬底，并在半导体衬底上形成金属层。该方法还包括在金属层上形成具有至少一层石墨烯类硅的硅层，并且通过氧化硅层下面的金属层的一部分来形成金属氧化物层。此外，该方法包括形成与硅层连接的源极区域和漏极区域。

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