专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09871031B2 Semiconductor device and an electronic apparatus 有权
公开(公告)号：US09871031B2
公开(公告)日：2018-01-16
申请号：US14934949
申请日：2015-11-06
申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
发明人： Yi Liu , Jun Wang , Ying Ma , Bin Lu , Huijuan Cheng
IPC分类号： H01L27/02 , H01L29/74 , H01L29/66 , H01L29/87 , H01L29/739
CPC分类号： H01L27/0262 , H01L27/0277 , H01L29/0649 , H01L29/6609 , H01L29/7391 , H01L29/7436 , H01L29/87
摘要： A semiconductor device includes a P-type substrate, and an N-well in the P-type substrate. A first N+ diffusion region is located in the P-type substrate, and a first P+ diffusion region is located in the N-well. A second P+ diffusion region is located across a boundary between the P-type substrate and the N-well. A first gate electrode overlies the N-well between the first P+ diffusion regions and the second P+ diffusion region. A second gate electrode overlies the P-type substrate between the second P+ diffusion region and the first N+ diffusion region. The first P+ diffusion region, the N-well, the P-type substrate, and the first N+ diffusion region form an SCR (Silicon-Controlled rectifier) device. The first P+ diffusion region, the second P+ diffusion region, and the first gate electrode form a PMOS transistor. The second P+ diffusion region, the first N+ diffusion region, and the second gate electrode form a gated diode.

2. 发明授权

US10261533B2 Low dropout regulator (LDO) circuit 有权
公开(公告)号：US10261533B2
公开(公告)日：2019-04-16
申请号：US15821295
申请日：2017-11-22
申请人： Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Bin Lu , Jun Wang , Sen Liu
IPC分类号： G05F1/565 , G05F1/595 , G05F1/618
摘要： The present disclosure relates to semiconductors and low dropout regulator (LDO) circuits. A LDO circuit may include first and second adjustment pipes and first and second error amplifiers. When an output voltage outputted by the output end of the LDO circuit is smaller than a reference voltage, the first error amplifier controls the first adjustment pipe to be turned on, and the second error amplifier controls the second adjustment pipe to be turned off. Alternative, when the output voltage is greater than the reference voltage, the first error amplifier controls the first adjustment pipe to be turned off, and the second error amplifier controls the second adjustment pipe to be turned on.

3. 发明申请

US20180181152A1 LOW DROPOUT REGULATOR (LDO) CIRCUIT 审中-公开
公开(公告)号：US20180181152A1
公开(公告)日：2018-06-28
申请号：US15821295
申请日：2017-11-22
申请人： Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Bin Lu , Jun Wang , Sen Liu
IPC分类号： G05F1/595
CPC分类号： G05F1/565 , G05F1/595 , G05F1/618
摘要： The present disclosure relates to the technical field of semiconductors, and discloses a low dropout regulator (LDO) circuit. The LDO circuit includes a first adjustment pipe, a second adjustment pipe, a first error amplifier, and a second error amplifier. The first adjustment pipe is connected between an input end and an output end of the LDO circuit. The second adjustment pipe is connected between the output end of the LDO circuit and the ground. The first error amplifier includes a first input end and a second input end, where the first input end is connected to the output end of the LDO circuit, and the second input end is used to receive a reference voltage. The second error amplifier includes a third input end and a fourth input end, where the third input end is connected to the output end of the LDO circuit, and the fourth input end is used to receive the reference voltage. In a case in which an output voltage outputted by the output end of the LDO circuit is smaller than the reference voltage, the first error amplifier controls the first adjustment pipe to be turned on, and the second error amplifier controls the second adjustment pipe to be turned off; and in a case in which the output voltage is greater than the reference voltage, the first error amplifier controls the first adjustment pipe to be turned off, and the second error amplifier controls the second adjustment pipe to be turned on.

4. 发明申请

US20160133621A1 SEMICONDUCTOR DEVICE AND AN ELECTRONIC APPARATUS 有权
标题翻译：半导体器件和电子设备
公开(公告)号：US20160133621A1
公开(公告)日：2016-05-12
申请号：US14934949
申请日：2015-11-06
申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
发明人： Yi Liu , Jun Wang , Ying Ma , Bin Lu , Huijuan Cheng
IPC分类号： H01L27/02
CPC分类号： H01L27/0262 , H01L27/0277 , H01L29/0649 , H01L29/6609 , H01L29/7391 , H01L29/7436 , H01L29/87
摘要： A semiconductor device includes a P-type substrate, and an N-well in the P-type substrate. A first N+ diffusion region is located in the P-type substrate, and a first P+ diffusion region is located in the N-well. A second P+ diffusion region is located across a boundary between the P-type substrate and the N-well. A first gate electrode overlies the N-well between the first P+ diffusion regions and the second P+ diffusion region. A second gate electrode overlies the P-type substrate between the second P+ diffusion region and the first N+ diffusion region. The first P+ diffusion region, the N-well, the P-type substrate, and the first N+ diffusion region form an SCR (Silicon-Controlled rectifier) device. The first P+ diffusion region, the second P+ diffusion region, and the first gate electrode form a PMOS transistor. The second P+ diffusion region, the first N+ diffusion region, and the second gate electrode form a gated diode.
摘要翻译：半导体器件包括P型衬底和P型衬底中的N阱。第一N +扩散区位于P型衬底中，第一P +扩散区位于N阱中。第二P +扩散区位于P型衬底和N阱之间的边界上。第一栅电极覆盖在第一P +扩散区和第二P +扩散区之间的N阱。第二栅电极覆盖在第二P +扩散区和第一N +扩散区之间的P型衬底。第一P +扩散区，N阱，P型衬底和第一N +扩散区形成SCR（硅控整流器）装置。第一P +扩散区，第二P +扩散区和第一栅电极形成PMOS晶体管。第二P +扩散区，第一N +扩散区和第二栅电极形成门控二极管。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式