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1. 发明公开

US20240258409A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240258409A1
公开(公告)日：2024-08-01
申请号：US18624488
申请日：2024-04-02
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei YAMAZAKI , Toshihiko TAKEUCHI , Naoto YAMADE , Hiroshi FUJIKI , Tomoaki MORIWAKA , Shunsuke KIMURA
IPC分类号： H01L29/66 , H01L29/10 , H01L29/49
CPC分类号： H01L29/66969 , H01L29/1054 , H01L29/4966
摘要： A semiconductor device that can be miniaturized or highly integrated is provided.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

2. 发明申请

US20160336433A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
公开(公告)号：US20160336433A1
公开(公告)日：2016-11-17
申请号：US15223002
申请日：2016-07-29
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yoshinori ANDO , Hidekazu MIYAIRI , Naoto YAMADE , Asako HIGA , Miki SUZUKI , Yoshinori IEDA , Yasutaka SUZUKI , Kosei NEI , Shunpei YAMAZAKI
IPC分类号： H01L29/66 , H01L21/4757 , H01L27/088 , H01L21/477
CPC分类号： H01L29/66969 , C23C14/086 , C23C14/351 , H01L21/0214 , H01L21/0217 , H01L21/02318 , H01L21/469 , H01L21/4757 , H01L21/477 , H01L21/8221 , H01L27/0688 , H01L27/088 , H01L27/1225 , H01L27/1255 , H01L27/1259 , H01L29/78603 , H01L29/78606 , H01L29/7869 , H01L29/78693
摘要： To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

3. 发明申请

US20150171196A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20150171196A1
公开(公告)日：2015-06-18
申请号：US14632081
申请日：2015-02-26
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Junichi KOEZUKA , Naoto YAMADE , Yuhei SATO , Yutaka OKAZAKI , Shunpei YAMAZAKI
IPC分类号： H01L29/66 , H01L21/383 , H01L21/44 , H01L21/477
CPC分类号： H01L27/1274 , H01L21/02565 , H01L21/02609 , H01L21/02667 , H01L21/383 , H01L21/44 , H01L21/477 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.
摘要翻译：使用氧化物半导体的半导体器件具有稳定的电特性以提高可靠性。在包括氧化物半导体膜的晶体管的制造工艺中，形成含有基本上垂直于其顶表面的c轴的晶体（也称为第一晶体氧化物半导体膜）的氧化物半导体膜; 氧化物被添加到氧化物半导体膜中以使至少部分氧化物半导体膜非晶化，从而形成含有过量氧的非晶氧化物半导体膜; 在非晶氧化物半导体膜上形成氧化铝膜; 在其上进行热处理以使非晶氧化物半导体膜的至少一部分结晶，使得含有具有基本上垂直于其顶表面的c轴的晶体的氧化物半导体膜（也称为第二结晶氧化物半导体膜）形成了。

4. 发明申请

US20140299876A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140299876A1
公开(公告)日：2014-10-09
申请号：US14311791
申请日：2014-06-23
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Naoto YAMADE , Junichi KOEZUKA
IPC分类号： H01L29/786
CPC分类号： H01L29/78693 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/12 , H01L29/04 , H01L29/10 , H01L29/7869
摘要： A semiconductor device which is miniaturized and has sufficient electrical characteristics to function as a transistor is provided. In a semiconductor device including a transistor in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are stacked in that order, an oxide semiconductor film which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and in which the percentage of the indium is twice or more as large as each of the percentage of the gallium and the percentage of the zinc when the composition of the four elements is expressed in atomic percentage is used as the semiconductor layer. In the semiconductor device, the oxide semiconductor film is a film to which oxygen is introduced in the manufacturing process and contains a large amount of oxygen, and an insulating layer including an aluminum oxide film is provided to cover the transistor.
摘要翻译：提供小型化并具有足够的电特性用作晶体管的半导体器件。在包括半导体层，栅极绝缘层和栅极电极层的晶体管的半导体器件中，依次包含铟，镓，锌和氧中的至少四种元素的氧化物半导体膜，并且其中当四种元素的组成以原子百分比表示时，铟的百分比是镓的百分比和锌的百分比的两倍或更多，而作为半导体层。在半导体器件中，氧化物半导体膜是在制造过程中引入氧并含有大量氧的膜，并且提供包括氧化铝膜的绝缘层以覆盖晶体管。

5. 发明申请

US20130137226A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130137226A1
公开(公告)日：2013-05-30
申请号：US13681895
申请日：2012-11-20
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Naoto YAMADE , Junichi KOEZUKA , Shunpei YAMAZAKI
IPC分类号： H01L29/66
CPC分类号： H01L29/66477 , H01L29/66969 , H01L29/7869
摘要： A highly reliable semiconductor device that includes a transistor including an oxide semiconductor is provided. In a manufacturing process of a semiconductor device that includes a bottom-gate transistor including an oxide semiconductor, an insulating film which is in contact with an oxide semiconductor film is subjected to dehydration or dehydrogenation treatment by heat treatment and oxygen doping treatment in this order. The insulating film which is in contact with the oxide semiconductor film refers to a gate insulating film provided under the oxide semiconductor film and an insulating film which is provided over the oxide semiconductor film and functions as a protective insulating film. The gate insulating film and/or the insulating film are/is subjected to dehydration or dehydrogenation treatment by heat treatment and oxygen doping treatment in this order.
摘要翻译：提供了包括具有氧化物半导体的晶体管的高度可靠的半导体器件。在包括具有氧化物半导体的底栅晶体管的半导体器件的制造工艺中，通过热处理和氧掺杂处理依次进行与氧化物半导体膜接触的绝缘膜的脱水或脱氢处理。与氧化物半导体膜接触的绝缘膜是指设置在氧化物半导体膜下方的栅极绝缘膜和设置在氧化物半导体膜上并用作保护绝缘膜的绝缘膜。通过依次进行热处理和氧掺杂处理对栅极绝缘膜和/或绝缘膜进行脱水或脱氢处理。

6. 发明公开

US20240154039A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240154039A1
公开(公告)日：2024-05-09
申请号：US18403791
申请日：2024-01-04
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Katsuaki TOCHIBAYASHI , Ryota HODO , Kentaro SUGAYA , Naoto YAMADE
IPC分类号： H01L29/786 , H01L29/24 , H01L29/66 , H10B12/00
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/66742 , H10B12/05 , H10B12/31
摘要： A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.

7. 发明申请

US20220416089A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220416089A1
公开(公告)日：2022-12-29
申请号：US17895126
申请日：2022-08-25
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Toshihiko TAKEUCHI , Naoto YAMADE , Yutaka OKAZAKI , Sachiaki TEZUKA , Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L21/8234 , H01L27/06 , H01L27/088 , H01L27/108 , H01L27/12 , H01L29/792
摘要： The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.

8. 发明申请

US20220352387A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220352387A1
公开(公告)日：2022-11-03
申请号：US17861432
申请日：2022-07-11
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Yutaka OKAZAKI , Akihisa SHIMOMURA , Naoto YAMADE , Tomoya TAKESHITA , Tetsuhiro TANAKA
IPC分类号： H01L29/786 , H01L29/66 , H01L29/45 , H01L29/49 , H01L27/12
摘要： A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

9. 发明申请

US20180108647A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180108647A1
公开(公告)日：2018-04-19
申请号：US15725519
申请日：2017-10-05
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Naoki OKUNO , Kosei NEI , Hiroaki HONDA , Naoto YAMADE , Hiroshi FUJIKI
IPC分类号： H01L27/02 , H01L27/11519 , H01L27/11565 , H01L29/786
CPC分类号： H01L27/0207 , H01L27/11519 , H01L27/11521 , H01L27/11565 , H01L29/78609 , H01L29/78618 , H01L29/78648 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.

10. 发明申请

US20180102420A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
公开(公告)号：US20180102420A1
公开(公告)日：2018-04-12
申请号：US15722055
申请日：2017-10-02
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yoshinori ANDO , Hidekazu MIYAIRI , Naoto YAMADE , Asako HIGA , Miki SUZUKI , Yoshinori IEDA , Yasutaka SUZUKI , Kosei NEI , Shunpei YAMAZAKI
IPC分类号： H01L29/66 , H01L29/786 , H01L27/12 , H01L27/088 , H01L27/06 , H01L21/822 , H01L21/4757 , H01L21/477 , H01L21/469 , H01L21/02 , C23C14/35 , C23C14/08
CPC分类号： H01L29/66969 , C23C14/086 , C23C14/351 , H01L21/0214 , H01L21/0217 , H01L21/02318 , H01L21/469 , H01L21/4757 , H01L21/477 , H01L21/8221 , H01L27/0688 , H01L27/088 , H01L27/1225 , H01L27/1255 , H01L27/1259 , H01L29/78603 , H01L29/78606 , H01L29/7869 , H01L29/78693
摘要： To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

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